Works

  • No. 1201
  • Authors : M. Ryzhii, V. Ryzhii, T. Otsuji, V. Mitin, and M.S. Shur
  • Title : Current driven plasma instability in graphene-FETs with Coulomb electron drag
  • Journal : COMCAS2021: International Conference on Microwaves, Communications, Antennas, Biomedical Engineering & Electronic Systems, Tel Aviv, Israel, Hybrid, Nov. 1-3, 2021.DOI:
  • No. 1200
  • Authors : T. Otsuji, A. Satou, V. Ryzhii, H. Fukidome, M. Ryzhii, and K. Narahara
  • Title : Controlling the PT symmetry of graphene Dirac plasmons and its application to terahertz laser transistors
  • Journal : O2-01, ICMNE: the 14th International Conference on Micro- and Nanoelectronics 2021, Zvenigorod, Moscow Region, Russia, Oct. 4-8, 2021. (invited)
  • No. 1199
  • Authors : 尾辻泰一
  • Title : テラヘルツ無線通信技術の研究動向 ~超スマート社会の要求に応える超高速・超大容量・超多接続通信の実現に向けて~
  • Journal : 電波技術協会報 FORN, 特集:東北大学ICTディープフォレスト, No. 342, pp. 10-13, Sept. 2021. (invited)
  • No. 1198
  • Authors : T. Otsuji
  • Title : Controlling the parity and time-reversal symmetry of graphene Dirac plasmons and its application to terahertz current-injection lasers
  • Journal : Graphene Week 2021, online, Sept. 20-24, 2021. (invited)
  • No. 1197
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V. Mitin, and M.S. Shur
  • Title : Coulomb drag by injected ballistic carriers in graphene n+-i-n-n+ structures: doping and temperature effects
  • Journal : Physica Status Solidi A: Appl. and Mat. Sci., vol. , pp. -, Sept. 2021. (in press)DOI: 10.1002/pssa.202100535
  • No. 1196
  • Authors : Stephane Albon Boubanga-Tombe, Akira Satou, Deepika Yadav, Dmitro B But, Wojciech Knap, Vyacheslav V Popov, Iliya V Gorbenko, Valentin Kachorovskii and Taiichi Otsuji
  • Title : Paving the way for tunable graphene plasmonic THz amplifiers
  • Journal : Frontiers in Physics, vol. , pp. -, Sept. 2021. (in press)DOI: 10.3389/fphy.2021.726806
  • No. 1195
  • Authors : 尾辻泰一
  • Title : 理論限界を超えたテラヘルツ波増幅:6G&7G超高速無線通信への可能性
  • Journal : レーザー学会 第2回「小型集積レーザー」専門委員会, 科学技術交流財団マイクロ固体フォトニクス研究会 第2回「ジャイアント・マイクロフォトニクス」研究会, 自然科学研究機構 分子科学研究所, 愛知県岡崎市, Sept. 22, 2021. (invited)
  • No. 1194
  • Authors : K. Liu, H. Yamada, K. Iwatsuki, and T. Otsuji
  • Title : A study for stable operation of battery loaded DC bus based on autonomous cooperative control
  • Journal : ICPRE: the 6th International Conference on Power and Renewable Energy, Shanghai Univ. of Electric Power, Shanghai, China, and Online, Sept. 17-20, 2021.
  • No. 1193
  • Authors : 中嶋大, 西村和樹, 大森雄也, 細谷友崇, 岩月勝美, 末光哲也, 尾辻泰一
  • Title : UTC-PD 集積 HEMT 光ダブルミキサへの格子状ソース電極の導入
  • Journal : 信学会ソサエティ大会, C-14-6, オンライン, Sept. 14-17, 2021.
  • No. 1192
  • Authors : 劉可, 山田博仁, 岩月勝美, 尾辻泰一
  • Title : 蓄電池分散装荷直流基線の自律分散協調制御による安定動作の検討
  • Journal : 信学会ソサエティ大会, B-9-1, オンライン, Sept. 14-17, 2021.
  • No. 1191
  • Authors : 尾辻泰一
  • Title : グラフェン THz デバイスの研究開発動向と将来展望
  • Journal : 信学会ソサエティ大会, 企画シンポジウム:Beyond 5G、6G に向けたデバイス・材料技術とその応用, CI-5-4, オンライン, Sept. 14-17, 2021. (invited)
  • No. 1190
  • Authors : 佐藤昭, 根来拓海, 細谷友崇, 瀧田佑馬, 伊藤弘昌, 南出泰亜, 尾辻泰一
  • Title : 二重格子ゲート・プラズモニックTHzディテクタにおける三次元整流効果
  • Journal : 第82回応用物理学会秋季学術講演会, 13p-N105-8, オンライン, Sept. 10-13, 2021.
  • No. 1189
  • Authors : K. Tamura, D. Ogiura, K. Suwa, H. Fukidome, A. Satou
  • Title : THz detection by an asymmetric dual-grating-gate graphene FET
  • Journal : IRMMW-THz: the 46th International Conference on Infrared, Millimeter and Terahertz Waves, Changdu, China, and Online, Aug. 29-Sept. 3, 2021.DOI:
  • No. 1188
  • Authors : Y. Sasaki, T. Otsuji, and A. Satou
  • Title : Modal Analysis Of Plasmon-Polaritons In Plasmonic THz Detector Integrated With Two-Dimensional Nano-Antennas
  • Journal : IRMMW-THz: the 46th International Conference on Infrared, Millimeter and Terahertz Waves, Changdu, China, and Online, Aug. 29-Sept. 3, 2021.DOI:
  • No. 1187
  • Authors : T. Negoro, T. Hosotani, Y. Takida, H. Ito, H. Minamide, T. Otsuji, and A. Satou
  • Title : 3D rectification effect on plasmonic THz detection by InP-based dual-grating-gate high-electron-mobility transistor
  • Journal : IRMMW-THz: the 46th International Conference on Infrared, Millimeter and Terahertz Waves, Changdu, China, and Online, Aug. 29-Sept. 3, 2021.DOI:
  • No. 1186
  • Authors : T. Hosotani, A. Satou, and T. Otsuji
  • Title : THz emission in a dual-grating-gate HEMT promoted by the plasmonic boom instability
  • Journal : IRMMW-THz: the 46th International Conference on Infrared, Millimeter and Terahertz Waves, Changdu, China, and Online, Aug. 29-Sept. 3, 2021.DOI:
  • No. 1185
  • Authors : A. Satou, T. Hosotani, T. Negoro, Y. Takida, H. Ito, H. Minamide, and T. Otsuji
  • Title : 3D rectification effect in InP-HEMT-based grating-gate plasmonic THz detector
  • Journal : URSI-GASS: the XXXIV General Assembly and Scientific Symposium (GASS) of the International Union of Radio Science, Rome, Italy, and Online, Aug. 28-Sept. 4, 2021.
  • No. 1184
  • Authors : V. Ryzhii, M. Ryzhii, V. Mitin, M.S. Shur, and T. Otsuji
  • Title : Coulomb electron drag mechanism of terahertz plasma instability in n+-i-n-n+ graphene FETs with ballistic injection
  • Journal : Appl. Phys. Lett., vol. 119, iss. 9, pp. 093501-1-5, 2021.DOI:10.1063/5.0061722
  • No. 1183
  • Authors : T. Otsuji, A. Satou, V. Ryzhii, H. Fukidome, and K. Narahara
  • Title : Controlling the parity and time-reversal symmetry of graphene Dirac plasmons and its application to terahertz lasers
  • Journal : AAAFM-UCLA2021: International Conference on Advances in Functional Materials, UCLA, Los Angeles, CA, USA and Online, Aug. 18-20, 2021. (invited)
  • No. 1182
  • Authors : T. Otsuji
  • Title : A new type of terahertz quantum cascade laser using graphene-based van der Waals heterostructures
  • Journal : META: the 11th International Conference on Metamaterials, Photonic Crystals, and Plasmonics Proc., Univ. of Warsaw, Warsaw, Poland, July 20-23, 2021. (invited)
  • No. 1181
  • Authors : V. Ryzhii, M. Ryzhii, V. Mitin, M.S. Shur, and T. Otsuji
  • Title : S-shaped current-voltage characteristics of n+-i-n-n+ graphene field-effect transistors due the Coulomb drag of quasi-equilibrium electrons by ballistic electrons
  • Journal : Phys. Rev. Appl., vol. 16, iss. 1, pp. 014001-1-12, July 2021.DOI: 10.1103/PhysRevApplied.16.014001
  • No. 1180
  • Authors : T. Hosotani, A. Satou, Y. Takida, H. Ito, H. Minamide, and T. Otsuji
  • Title : 1-THz plasmonic double-mixing in a dual-grating-gate high-electronmobility transistor
  • Journal : CLEO-EU: International Conference on Lasers and Electro-Optics Europe Tech. Dig., CC-6.2, vol. 1, pp. 1-2, Web-Online, June 25, 2021.DOI:
  • No. 1179
  • Authors : Kazuki Nishimura, Tomotaka Hosotani, Dai Nakajima, Tetsuya Suemitsu, Katsumi Iwatsuki, Taiichi Otsuji, and Akira Satou
  • Title : Optical-to-Wireless Carrier Frequency Down-Conversion by UTC-PDIntegrated HEMT: Dependence of Conversion Gain on UTC-PD Mesa Size
  • Journal : CLEO-EU: International Conference on Lasers and Electro-Optics Europe Tech. Dig., CI-3.5, vol. 1, pp. 1-2, Web-Online, June 24, 2021.DOI:
  • No. 1178
  • Authors : V. Ryzhii, M. Ryzhii, T. Otsuji, V. Mitin, and M. Shur
  • Title : Heat capacity of quasi-nonequilibrium electron-hole plasma in graphene layers and graphene bilayers
  • Journal : Phys. Rev. B, vol. 103, pp. 245414-1-6, June 2021.DOI: 10.1103/PhysRevB.103.245414
  • No. 1177
  • Authors : Koichi Tamura, Daichi Ogiura, Kento Suwa, Hirokazu Fukidome, Akira Satou, Y. Takida, H. Minamide, and T. Otsuji
  • Title : Fast terahertz detection in asymmetric dual-grating-gate graphene-channel FETs
  • Journal : DRC: 79th Annual Device Research Conference Dig., PS1.G, vol. 1, pp. 1-2, Web-Online, June 21, 2021.DOI:
  • No. 1176
  • Authors : V. Ryzhii, M. Ryzhii, T. Otsuji, V.G. Leiman, V. Mitin, and M. Shur
  • Title : Modulation characteristics of uncooled graphene photodetectors
  • Journal : J. Appl. Phys., vol. 129, pp. 214503-1-10, June 2021.DOI: 10.1063/5.0046215
  • No. 1175
  • Authors : Y. Sasaki, T. Otsuji, and A. Satou
  • Title : 2D plasmon-polariton excitation in plasmonic THz detector with 2D diffraction grating structure
  • Journal : IWCN: the International Workshop on Computational Nanotechnology Book of Abstracts, pp. 85-86, Online, May 24-June 6, 2021.
  • No. 1174
  • Authors : A. Satou, T. Hosotani, T. Negoro, Y. Takida, H. Ito, H. Minamide, and T. Otsuji
  • Title : Giant Enhancement of Photovoltage from InGaAs-Channel Dual-Grating-Gate HEMT THz Detector due to Nonlinear Rectification Effect at InGaAs/InAlAs Heterobarrier
  • Journal : CLEO: International Conference on Lasers and Electro-Optics Tech. Dig., STh2C.1, vol. 1, pp. 1-2, Web-Online, May 13, 2021.DOI:
  • No. 1173
  • Authors : T. Hosotani, A. Satou, and T. Otsuji
  • Title : Bias voltage dependency of plasmonic instability and terahertz radiation in a dual-grating-gate high-electron-mobility transistor
  • Journal : CLEO: International Conference on Lasers and Electro-Optics Tech. Dig., AM3R.6, vol. 1, pp. 1-2, Web-Online, MayDOI:
  • No. 1172
  • Authors : T. Hosotani, A. Satou, and T. Otsuji
  • Title : Terahertz emission in an InGaAs-based dual-grating-gate high-electron-mobility transistor plasmonic photomixer
  • Journal : Appl. Phys. Exp., vol. 14(5), pp. 14 051001-1-5, April 2021.DOI: 10.35848/1882-0786/abf02a
  • No. 1171
  • Authors : 尾辻泰一
  • Title : グラフェンの理論限界を超えるテラヘルツ電磁波の増幅に成功 ―次世代6G&7G超高速無線通信の実現に光明
  • Journal : オプトロニクスWEBセミナー「Beyond 5Gとテラヘルツ通信:実用化と将来展望」, Web Online, April 28, 2021. (invited)
  • No. 1170
  • Authors : 尾辻泰一
  • Title : 5Gの先へ!テラヘルツ波デバイスに求められる新材料と要素技術 最先端の研究開発状況と課題・展望
  • Journal : サイエンス&テクノロジー セミナー, Web Online, April 21, 2021. (Seminar Lecturere)
  • No. 1169
  • Authors : 尾辻泰一
  • Title : 電力と情報通信のネットワーク基盤融合 による超スマート社会の創出に向けて
  • Journal : 耐災害ICT研究シンポジウム2021 ~耐災害ICTからレジリエントICTに向けて~, TKPセンター, 仙台市, Online hybrid, March 24, 2021. (invited)
  • No. 1168
  • Authors : 諏訪健斗, 吹留博一, 末光眞希, 尾辻泰一
  • Title : テラヘルツトランジスタレーザー高性能化に向けたエピタキシャルグラフェン成長プロセスの改良と評価
  • Journal : 第68回応用物理学会春季学術講演会予稿集, 19p-P02-19, オンラインWEB開催, Mar. 19, 2021.
  • No. 1167
  • Authors : 細谷友崇, 佐藤昭, 尾辻泰一
  • Title : 二重回折格子状ゲートHEMTにおけるプラズモン不安定性動作機構のゲートバイアス依存性
  • Journal : 第68回応用物理学会春季学術講演会予稿集, 17a-Z09-1, Webオンライン開催, Mar. 17, 2021.
  • No. 1166
  • Authors : 山田博仁, 松井正和, 越浩之, 岩月勝美, 尾辻泰一
  • Title : 蓄電池分散装荷直流基線の過渡応答に関する検討
  • Journal : 信学総全大予稿集, B-9-1, Webオンライン開催, Mar. 12, 2021.
  • No. 1165
  • Authors : 劉可, 松井正和, 越浩之, 山田博仁, 岩月勝美, 尾辻泰一
  • Title : 専用線を用いた電力融通による再エネ利用率向上効果
  • Journal : 信学総全大予稿集, B-9-2, Webオンライン開催, Mar. 12, 2021.
  • No. 1164
  • Authors : T. Otsuji
  • Title : Terahertz current-driven lasing and amplification in graphene-based vdW heterostructures
  • Journal : IEEE ICOPS 2020: 47th IEEE International Conference on Plasma Sciences, Singapore, Singapore, Dec. 6-10, 2020. (invited)
  • No. 1163
  • Authors : 西村和樹, 大森雄也, 細谷友崇, 岩月勝美, 末光哲也, 尾辻泰一, 佐藤昭
  • Title : UTC-PDメサ面積縮小によるUTC-PD集積HEMTの光-ミリ波キャリア周波数下方変換利得向上
  • Journal : 信学総全大予稿集, C-14-16, Webオンライン開催, Mar. 12, 2021.
  • No. 1162
  • Authors : A. Satou, Y. Omori, K. Nishimura, T. Hosotani, K. Iwatsuki, and T. Otsuji
  • Title : Unitraveling-carrier-photodiode-integrated high-electron-mobility transistor for photonic double-mixing
  • Journal : J. Lightwave Technol., vol. 39 (10), pp. 3341-3349, May 2021.DOI: 10.1109/JLT.2021.3060795
  • No. 1161
  • Authors : D. Ogiura
  • Title : Fast terahertz detection in asymmetric dual-grating-gate graphene-channel FETs,
  • Journal : The 7th International Workshop on 2D Materials A3-Foresight Program Abbstract Book, YR30 (1 page), Online Web, Feb. 18-19, 2021.
  • No. 1160
  • Authors : T. Otsuji, K. Iwatsuki, H. Yamada, and M. Yashima
  • Title : Concept of resilitent electric power and information communication technology (R-EICT) converged network systems based on overall optimization of autonomous decintralized cooperative control of DC microgrids
  • Journal : ISGT-NA: IEEE PES (Power & Energy Society) Innovative Smart Grid Technologies Conference North America, Washington D.C., USA, online web, Feb. 15-18, 2021.
  • No. 1159
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V.G. Leiman, P.P. Maltsev, V.E. Karasik, V. Mitin, and M.S. Shur
  • Title : Theoretical analysis of injection driven thermal light emitters based on graphene encapsulated by hexagonal boron nitride
  • Journal : Opt. Mat. Exp., vol. 11, iss. 2, pp. 468-486, Feb. 2021.DOI: 10.1364/OME.412973
  • No. 1158
  • Authors : 尾辻泰一
  • Title : グラフェンを中心とする二次元材料を用いたテラヘルツ電子デバイスおよびプラズモニックデバイスの基礎と動向
  • Journal : 電子情報通信学会東北支部講演会, 秋田大学(Webオンライン開催), Dec. 16, 2021. (invited)
  • No. 1157
  • Authors : T. Otsuji
  • Title : Terahertz current-driven lasing and amplification in graphene-based vdW heterostructures
  • Journal : IEEE ICOPS 2020: 47th IEEE International Conference on Plasma Sciences, Singapore, Singapore, Dec. 6-10, 2020. (invited)
  • No. 1156
  • Authors : 佐々木悠真, 尾辻泰一,佐藤昭
  • Title : 二次元回折格子構造金属ナノアンテナを有するプラズモニックTHz 検出素子におけるプラズモン・ポラリトンのスペクトル解析
  • Journal : 第75回応用物理学会東北支部学術講演会予稿集, pp. 94-95(4aB08), WEBオンライン開催, Dec. 3-4, 2020.
  • No. 1155
  • Authors : 根来拓海, 齋藤琢 ,細谷友崇 ,尾辻泰一 ,瀧田佑馬 ,伊藤弘昌 ,南出泰亜 ,佐藤昭
  • Title : 格子ゲート構造高電子移動度トランジスタを用いたTHz 検出におけるゲート電極からの光起電圧出力に関する研究
  • Journal : 第75回応用物理学会東北支部学術講演会予稿集, pp. 92-93(4aB07), WEBオンライン開催, Dec. 3-4, 2020.
  • No. 1154
  • Authors : 荻浦大地, 佐藤昭, 吹留博一, 尾辻泰一
  • Title : 非対称二重格子ゲートを有するグラフェントランジスタにおけるプラズモン不安定性とそのテラヘルツ光源応用
  • Journal : 第75回応用物理学会東北支部学術講演会予稿集, pp. 90-91(4aB06), WEBオンライン開催, Dec. 3-4, 2020.
  • No. 1153
  • Authors : T. Hosotani, A. Satou, and T. Otsuji
  • Title : Terahertz emission with plasmonic photomixer in and InGaAs-based dual-grating-gate high-electron-mobility transistor
  • Journal : MRS Fall Meeting 2020, Nov. 28, 2020. (Virtual, online)
  • No. 1152
  • Authors : 佐藤昭, 根来拓海, 齋藤琢, 鈴木雅也, 細谷友崇, 瀧田佑馬, 伊藤弘昌, 南出泰亜, 尾辻泰一
  • Title : 二次元プラズモンを用いたTHzディテクタの新展開
  • Journal : Con4, シンポジウム「テラヘルツ科学の最先端VII」, WEBオンライン開催, Nov. 9, 2021. (invited)
  • No. 1151
  • Authors : T. Otsuji
  • Title : Room temperature amplification of terahertz radiation by grating-gate monolayer graphene-channel transistor structure
  • Journal : IRMMW-THz: 45th Int. Conf. on Infrared, Millimeter, and Terahertz Waves, Buffalo, NY, USA, Nov. 8-13, 2020. (Virtual) (invited)DOI:
  • No. 1150
  • Authors : T. Hosotani, A. Satou, and T. Otsuji
  • Title : Terahertz emission in an asymmetric dual-grating-gate high-electron mobility transistor plasmonic photomixer under dc current flow
  • Journal : IRMMW-THz: 45th Int. Conf. on Infrared, Millimeter, and Terahertz Waves, Buffalo, NY, USA, Nov. 8-13, 2020.(Virtual)DOI:
  • No. 1149
  • Authors : T. Negoro, T. Saito, T. Hosotani, T. Otsuji, Y Takida, H. Ito, H. Minamide, and A. Satou
  • Title : Gate-readout of photovoltage from a grating-gate plasmonic THz detector
  • Journal : IRMMW-THz: 45th Int. Conf. on Infrared, Millimeter, and Terahertz Waves, Buffalo, NY, USA, Nov. 8-13, 2020. (Virtual)DOI:
  • No. 1148
  • Authors : T. Uchino, K. Shiga, K. Imai, M. Kusano, H. Fukidome, A. Satou, and T. Otsuji
  • Title : Improved sensitivity of surface-enhanced Raman spectroscopy (SERS) substrates using monolayer graphene
  • Journal : MNC2020: 33rd Int. Microprocesses and Nanotechnology Conference Dig., 2020-21-13 (2 page), Online, Nov. 9-12, 2020.
  • No. 1147
  • Authors : M. Ryzhii, V. Ryzhii, P.P. Maltsev, D.S. Ponomarev, V.G. Leiman, V.E. Karasik, V. Mitin, M.S. Shur, and T. Otsuji
  • Title : Far-infrared photodetection in graphene nanoribbon heterostructures with black-phosphorus base layers
  • Journal : Opt. Eng. SPIE, vol. 60, no. 8, pp. 082002-1-14, Oct. 2020.DOI: 10.1117/1.OE.60.8.082002
  • No. 1146
  • Authors : T. Otsuji
  • Title : Creation of R-EIC (resilient-energy-information-communication) converged network infrastructure based on overall optimization of autonomous distributed decentralized cooperative DC microgrids
  • Journal : The 1st International Symposium on AI Electronics, Westin Sendai, Sendai, Japan, Sept. 28., 2020.(invited)
  • No. 1145
  • Authors : H. Sugawara, K. Suwa, H. Fukidome, J. A. Delgado-Notario, A. Satou, and T. Otsuji
  • Title : Process development and crystal quality evaluation of van der Waals nanocapacitors using graphene/h-BN heterostructures stacked by a transfer/stacking method
  • Journal : Poster-J3, 6th A3 Foresight International Workshop on 2D Materials, online web, Sep. 24-25, 2020.
  • No. 1144
  • Authors : T. Otsuji
  • Title : Graphene Flagship Japan-EU International Exchange & Collaborations: Workshop Organizations since 2015 on Graphene and Related 2D Materials
  • Journal : Graphene Flagship Workshop on Graphene for Research, Innovation and Collaboration Digital Event, Around the World with Graphene Session, Sept. 24, 2020.(invited)
  • No. 1143
  • Authors : 劉可, 山田博仁, 岩月勝美, 尾辻泰一
  • Title : グリッド間電力融通に必要な電力ケーブルの電流容量に関する検討
  • Journal : 信学会ソサエティ大会, オンライン開催, Sept. 15-18, 2020.
  • No. 1142
  • Authors : 山田博仁, 岩月勝美, 尾辻泰一
  • Title : 蓄電池分散装荷直流基線の電気的慣性力に関する検討
  • Journal : 信学会ソサエティ大会, オンライン開催, Sept. 15-18, 2020.
  • No. 1141
  • Authors : 菅原大樹, 諏訪健斗, 吹留博一, Juan Antonio Delgado-Notario, 佐藤昭, 尾辻泰一
  • Title : グラフェン/h-BNファンデルワールス積層構造ナノキャパシタの 転写スタック法によるプロセス開発と結晶品質評価
  • Journal : 第81回応用物理学会秋季学術講演会, 同志社大今出川校地, 京都, Sept. 8-11, 2020.(オンライン開催に変更)
  • No. 1140
  • Authors : 佐々木悠真, 尾辻泰一, 佐藤昭
  • Title : 二次元回折構造プラズモニックTHz検出素子におけるプラズモン・ポラリトンのモード解析
  • Journal : 第81回応用物理学会秋季学術講演会, 同志社大今出川校地, 京都, Sept. 8-11, 2020.(オンライン開催に変更)
  • No. 1139
  • Authors : 細谷友崇, 尾辻泰一, 佐藤昭
  • Title : InGaAs系DGG-HEMT中でのフォトミキシングによるテラヘルツ放射
  • Journal : 第81回応用物理学会秋季学術講演会, 同志社大今出川校地, 京都, Sept. 8-11, 2020.(オンライン開催に変更)
  • No. 1138
  • Authors : Kuan-Ting Lin, Hirofumi Nema, Qianchun Weng, Sunmi Kim, Kenta Sugawara, Taiichi Otsuji,Susumu Komiyama, and Yusuke Kajihara
  • Title : Nanoscale probing of thermally excited evanescent fields in an electrically biased graphene by near-field optical microscopy
  • Journal : Appl. Phys. Exp., vol. 13(9), pp. 096501-1-5, Aug. 2020.DOI: 10.35848/1882-0786/abae0a
  • No. 1137
  • Authors : V. Mitin, T. Otsuji, and V. Ryzhii
  • Title : Graphene-Based Terahertz Electronics and Plasmonics: Detector and Emitter Concepts
  • Journal : 960 pages, Jenny Stanford Publishing, Singapore, Singapore, Aug. 2020.ISBN: 978-9814800754
  • No. 1136
  • Authors : V. Ryzhii, M. Ryzhii, T. Otsuji, V. Karasik, V. Leiman, V. Mitin, and M. Shur
  • Title : Multiple heterostructures with van der Waals barrier layers for terahertz superluminescent and laser diodes with lateral/vertical current injection
  • Journal : Semicond. Sci. Technol.,DOI: 10.1088/1361-6641/ab9398
  • No. 1135
  • Authors : V. Ryzhii, M. Ryzhii, P.P. Maltsev, V.E. Karasik, V. Mitin, M.S. Shur, and T. Otsuji
  • Title : Far-infrared and terahertz emitting diodes based on graphene/black-P and graphene/MoS2 heterostructures
  • Journal : Opt. Exp., vol. 28, no. 16, pp. 24136-1-16, July 2020.DOI: 10.1364/OE.394662
  • No. 1134
  • Authors : S. Boubanga-Tombet, W. Knap, D. Yadav, A. Satou, D.B. But, V.V. Popov, I.V. Gorbenko, V. Kachorovskii, and T. Otsuji
  • Title : Room temperature amplification of terahertz radiation by grating-gate graphene structures
  • Journal : Phys. Rev. X, vol. 10, iss. 3, pp. 031004-1-19, July 2020.DOI: 10.1103/PhysRevX.10.031004
  • No. 1133
  • Authors : T. Negoro, T. Saito, T. Hosotani, T. Otsuji, Y. Takida, H. Ito, H. Minamide, and A. Satou
  • Title : A novel grating-gate plasmonic THz detector with photovoltage gate-readout for use in high-speed wireless communications
  • Journal : DRC: 78th Annual Device Research Conference Dig., paper #1J, Ohio State Univ., Columbus, OH, USA, June 22, 2020.DOI:
  • No. 1132
  • Authors : J.A. Delgado-Notario, V. Clericò, E. Diez, J.E. Vel'azquez-P'erez, T. Taniguchi, K. Watanabe, T. Otsuji, and Y.M. Meziani
  • Title : Asymmetric dual grating gates graphene FET for detection of terahertz radiations
  • Journal : APL Photon., vol. 5, pp. 066102-1-8, June 2020.DOI: 10.1063/5.0007249
  • No. 1131
  • Authors : P. Padmanabhan, S. Boubanga-Tombet, H. Fukidome, T. Otsuji, and R. P. Prasankumar
  • Title : A graphene-based magnetoplasmonic metasurface for actively tunable transmission and polarization rotation at terahertz frequencies
  • Journal : Appl. Phys. Lett., vol. 116, pp. 221107-1-6, June 2020DOI: 10.1063/5.0006448
  • No. 1130
  • Authors : A. Satou, K. Nishimura, Y. Omori, T. Hosotani, K. Iwatsuki, and T. Otsuji
  • Title : UTC-PD-integrated HEMT for optical-to-sub-terahertz carrer frequency down-conversion
  • Journal : SPIE DCS: Defense + Commercial Sensing, Anaheim, CA, USA, April 26-30, 2020. (changed to digital forum) (invited); Proc. SPIE, vol. 11390, pp. 113900M-1-6, Apr. 2020.DOI: 10.1117/12.2557170
  • No. 1129
  • Authors : V. Ryzhii, T. Otsuji, and M.S. Shur
  • Title : Graphene based plasma-wave devices for terahertz applications
  • Journal : Appl. Phys. Lett., vol. 116, pp. 140501-1-6, Apr. 2020. (invited)DOI: 10.1063/1.5140712
  • No. 1128
  • Authors : K. Shiga, T. Komiyama, Y. Fuse, H. Fukidome, A. Satou, T. Otsuji, and T. Uchino
  • Title : Electrical Transport Properties of Gate Tunable Graphene Lateral Tunnel Diodes
  • Journal : Jpn. J. Appl. Phys., vol. 59, pp. SIID03-1-6, Apr. 2020.DOI: 10.35848/1347-4065/ab83de
  • No. 1127
  • Authors : S. A. Boubanga-Tombet, D. Yadav, A. Satou, W. Knap, V. V. Popov, and T. Otsuji
  • Title : Terahertz gain and amplification in current-driven metasurfaces of graphene Dirac plasmons
  • Journal : SPIE Photonics Europe, Conf. on Terahertz Photonics, Strasbourg, France, April 1, 2020. (Presented by T.Otsuji, changed to online conference) (invited); Proc. SPIE, vol. 11348, Terahertz Photonics, pp. 113480P-1-6, March 30, 2020.DOI: 10.1117/12.2559504
  • No. 1126
  • Authors : 尾辻
  • Title : 電力と情報通信のネットワーク基盤融合による超スマート社会の創出に向けて
  • Journal : TKPガーデンシティ仙台, 仙台市, 宮城, (Digital Forumに変更) March 26, 2020. (基調講演)
  • No. 1125
  • Authors : 西村和樹, 大森雄也, 細谷友崇, 岩月勝美, 末光哲也, 尾辻泰一, 佐藤昭
  • Title : 光吸収層面積縮小によるUTC-PD集積HEMTの光ダブルミキシング効率向上
  • Journal : 第81回応用物理学会秋季学術講演会シンポジウム, 12a-B414-7, 上智大学四ツ谷Camp., 東京, Mar. 12, 2020. (開催中止、予稿集のみ)
  • No. 1124
  • Authors : 根来拓海, 齋藤琢, 鈴木雅也, 細谷友崇, 末光哲也, 瀧田佑馬, 伊藤弘昌, 南出泰亜, 尾辻泰一, 佐藤昭
  • Title : 格子ゲート構造プラズモニックTHz検出素子におけるゲート電極からの光電圧出力に関する検討
  • Journal : 第81回応用物理学会秋季学術講演会シンポジウム, 12a-B414-8, 上智大学四ツ谷Camp., 東京, Mar. 12, 2020. (開催中止、予稿集のみ)
  • No. 1123
  • Authors : V. Ryzhii, M. Ryzhii, V. Mitin, M.S. Shur, and T. Otsuji
  • Title : Far-infrared photodetectors based on graphene/black-AsP heterostructures
  • Journal : Opt. Exp., vol. 28, no. 2, pp. 2480-2489, Jan. 2020.DOI: 10.1364/OE.376299
  • No. 1122
  • Authors : Y. Moriguchi, Y. Tokizane, Y. Takida, K. Nawata, S. Nagano, M. Sato, T. Otsuji, and H. Minamide
  • Title : Frequency-agile injection-seeded terahertz-wave parametric generation
  • Journal : Opt. Lett., vol. 45, no. 1, pp. 77-80, Jan. 2020.DOI: 10.1364/OL.45.000077
  • No. 1121
  • Authors : 齋藤琢, 鈴木雅也, 細谷友崇, 尾辻泰一, 瀧田佑馬, 伊藤弘昌, 南出泰亜, 佐藤昭
  • Title : 格子ゲート構造プラズモニックTHzディテクタのゲート電極からの光電流出力に関する検討
  • Journal : 電子情報通信学会エレクトロニクスソサエティ電子デバイス研究専門委員会(ED), テラヘルツ応用システム時限研究専門委員会(THz)共催電子デバイス研究会 信学技報, vol. 119, no. 353, ED2019-88, pp. 49-52, Dec. 2019.
  • No. 1120
  • Authors : 込山貴大, 渡辺隆之, Sergey Morozov, Mikhail Fadeev, Vladimir Utochkin, 吹留博一, 佐藤昭, 尾辻泰一
  • Title : 光励起多層グラフェンにおける広帯域テラヘルツ光放射の観測
  • Journal : 電子情報通信学会エレクトロニクスソサエティ電子デバイス研究専門委員会(ED), テラヘルツ応用システム時限研究専門委員会(THz)共催電子デバイス研究会 信学技報, vol. 119, no. 353, ED2019-80, pp. 17-20, Dec. 2019.
  • No. 1119
  • Authors : A. Satou, K. Iwatsuki, and T. Otsuji
  • Title : Sub-terahertz opt-electronics device technologies for B5G mobile communications networks
  • Journal : ITRI-Tohoku University B5G Workshop 2019, ICL/ITRI Build. 14, Conf. Room 012, Hsinchu, Taiwan, R.O.C., Dec. 18, 2019.
  • No. 1118
  • Authors : Alexander Yachmenev, Denis Lavrukhin, Igor Glinskiy, Nikolay Zenchenko, Yurii Goncharov, Igor Spektor, Rustam Khabibullin, Taiichi Otsuji, and Dmitry Ponomarev
  • Title : Metallic and dielectric metasurfaces in photoconductive terahertz devices
  • Journal : Opt. Eng., vol. 59(6), pp. 061608-1-18, 2019.DOI: 10.1117/1.OE.59.6.061608
  • No. 1117
  • Authors : Ponomarev, Dmitry; Lavrukhin, Denis; Yachmenev, Alexander; Khabibullin, Rustam; Semenikhin, Igor; Vyurkov, V; Marem'yanin, Kirill; Gavrilenko, V; Ryzhii, Maxim; Shur, Michael; Otsuji, Taiichi; Ryzhii, Victor
  • Title : Sub-terahertz FET detector with self-assembled Sn-nanothreads
  • Journal : J. Phys. D: Appl. Phys., vol. 53, pp. 075102-1-7, Jan. 2020.DOI: 10.1088/1361-6463/ab588f
  • No. 1116
  • Authors : Mikhail Yu. Morozov, Vladimir G. Leiman, Vyacheslav V. Popov, Vladimir Mitin, Michael S. Shur, Valery E. Karasik, Maxim Ryzhii, Taiichi Otsuji, and Victor Ryzh
  • Title : Optical pumping in graphene-based terahertz/far-infrared superluminescent and laser heterostructures with graded-gap black-Px As1-x absorbing-cooling layers
  • Journal : Opt. Eng., vol. 59(6), pp. 061606-1-11, 2019.DOI: 10.1117/1.OE.59.6.061606
  • No. 1115
  • Authors : Alexander Dubinov, Vladimir Aleshkin, Sergey Morozov, Victor Ryzhii, and Taiichi Otsuji
  • Title : Terahertz plasmon-emitting graphene-channel transistor
  • Journal : Opto-Electronics Review, vol. 27, pp. 345-347, Dec. 2019.DOI: 10.1016/j.opelre.2019.11.003
  • No. 1114
  • Authors : T. Otsuji
  • Title : Physics and technology of graphene-based 2D heterostructures for current-injection terahertz lasers and amplifiers
  • Journal : ISNTT2019: the International School and Symposium on Nanoscale Transport and phoTonics, Atsugi R&D center, Kanagawa, Japan, Nov. 18-22, 2019.
  • No. 1113
  • Authors : T. Otsuji
  • Title : Graphene-based van der Waals heterostructures towards a new type of terahertz quantum-cascade lasers
  • Journal : th 5th EU-Japan Flagship Workshop on Graphene and 2D Materials, S4-1, Palazzo della Carovana, Scuola Normale Superiore, Pisa, Italy, Nov. 18-20, 2019.
  • No. 1112
  • Authors : 尾辻泰一
  • Title : 東北大におけるテラヘルツ科学技術研究, ならびテラヘルツプラズモニックデバイスの創出
  • Journal : 東北大学&理研第1回連携ワークショップ-テラヘルツ光研究の新展開と産業応用への展望, 東北大学青葉山新キャンパス環境科学研究科本館, 仙台, 日本, Oct. 23, 2019. (invited)
  • No. 1111
  • Authors : 尾辻泰一
  • Title : 二次元原子薄膜ヘテロ結合の光電子プラズモニック物性とそのテラヘルツ光電子デバイス応用
  • Journal : 徳島大学ポストLEDフォトニクス公開シンポジウム2019, 徳島大学 常三島けやきホール, 徳島市, Oct. 15, 2019. (invited, plenary)
  • No. 1110
  • Authors : J.A. Delgado-Notario, V. Clerico, E. Diez, J.E. Velazquez-Perez, T. Taniguchi, K. Watanabe, T. Otsuji, and Y.M. Meziani
  • Title : Asymmetric dual grating gate graphene-FETs for direct detection of THz radiation
  • Journal : RPGR2019: Recent Progress on Graphene and 2D Materials Abstracts, 7P-37 (2 pages), Matsue, Shimane, Japan, Oct. 7-9, 2019.
  • No. 1109
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V. Leiman, V. Mitin, and M. S. Shur
  • Title : Concepts of terahertz and infrared devices based on graphene/black phosphorus-arsenic heterostructures
  • Journal : RPGR2019: Recent Progress on Graphene and 2D Materials Abstracts, 8P-7 (2 pages), Matsue, Shimane, Japan, Oct. 7-9, 2019.
  • No. 1108
  • Authors : T. Komiyama, T. Watanabe, S. Morozov, M. Fadeev, V. Utochkin, H. Fukidome, A. Satou, andT. Otsuji
  • Title : Realization of the high-performance graphene transistor by controlling the interface between graphene and gate dielectric
  • Journal : RPGR2019: Recent Progress on Graphene and 2D Materials Abstracts, 7P-40 (2 pages), Matsue, Shimane, Japan, Oct. 7-9, 2019.
  • No. 1107
  • Authors : S. Boubanga-Tombet, D. Yadav, A. Satou, W. Knap, V.V. Popov, and T. Otsuji
  • Title : Terahertz Light Amplification and Lasing in Current-Driven Graphene-Channel Transistor Structures
  • Journal : 2D MATERIALS 2019 - International Congress on Graphene, 2D Materials and Applications Abstracts, Sochi Olympic Park, Sochi, Russia, 30th Sept.- 04th Oct. 2019.
  • No. 1106
  • Authors : V. Ryzhii, M. Ryzhii, V. Leiman, V. Mitin, T.Otsuji, and M. S. Shur
  • Title : Graphene/Black Phosphorus-Arsenic Heterostructures and their terahertz and infrared device applications
  • Journal : 2D MATERIALS 2019 - International Congress on Graphene, 2D Materials and Applications Abstracts, Sochi Olympic Park, Sochi, Russia, 30th Sept.- 04th Oct. 2019.
  • No. 1105
  • Authors : Taku Saito, Masaya Suzuki, Tomotaka Hosotani, Taiichi Otsuji, Y. Takida, H. Ito, H. Minamide, and Akira Satou
  • Title : Gate electrode as an putput port of a grating-gate plasmonic THz detector
  • Journal : MTSA2019: The 5th International Symposium on Microwave/Terahertz Science and Applications Abstracts, Bp1-4 (1 page), Hanwha Resorts Haeundae Tivoli, Busan, Korea, Sept. 30-Oct. 3, 2019.
  • No. 1104
  • Authors : Y. Fuse, A. A. Dubinov, T. Watanabe, V. Ya. Aleshkin, S. V. Morozov, A. Satou, V. Ryzhii, and T. Otsuji
  • Title : Terahertz plasmonic graphene-channel transistor laser
  • Journal : MTSA2019: The 5th International Symposium on Microwave/Terahertz Science and Applications Abstracts, Ap2-4 (1 page), Hanwha Resorts Haeundae Tivoli, Busan, Korea, Sept. 30-Oct. 3, 2019.
  • No. 1103
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, A.A. Dubinov, V. Ya. Aleshkin, V.E. Karasik, and M.S. Shur
  • Title : Negative terahertz conductivity and amplification of surface plasmons in graphene-black phosphorus injection laser heterostructures
  • Journal : Phys. Rev. B, vol. 100, pp. 115436-1-13, Sept. 2019.DOI: 10.1103/PhysRevB.100.115436
  • No. 1102
  • Authors : V. Ryzhii, M. Ryzhii, T. Otsuji, V.E. Karasik, V.G. Leiman, V. Mitin, and M.S. Shur
  • Title : Negative terahertz conductivity at vertical carrier injection in a black-Arsenic-Phosphorus-Graphene heterostructure integrated with a light-emitting diode
  • Journal : IEEE J. Select. Top. Quantum Electron., vol. 25, iss. 6, pp. 2000209-1-9, 2019.DOI: 10.1109/JSTQE.2019.2941922
  • No. 1101
  • Authors : M.Yu. Morozov, V.V. Popov, M. Ryzhii, V.G. Leiman, V. Mitin, M.S. Shur, T. Otsuji, and V. Ryzhii
  • Title : Optical pumping through a black-As absorbing-cooling layer in graphene-based heterostructure: thermo-diffusion model
  • Journal : Opt. Mat. Exp., vol. 9, iss. 10, pp. 4061-4069, Sept. 2019.DOI: 10.1364/OME.9.004061
  • No. 1100
  • Authors : 佐藤昭, 大森雄也, 西村和樹, 細谷友崇, 岩月勝美, 末光哲也, 尾辻泰一
  • Title : UTC-PD 集積 HEMT による光ミリ波キャリア周波数下方変換
  • Journal : 2019年電子情報通信学会ソサエティ大会, 大会企画シンポジウムCI-2. 次世代光通信, 無線通信シームレス化を支える超高速デバイス技術と展望, CI-2-6, 大阪大学 豊中キャンパス, 豊中市, Sept. 10-13, 2019.
  • No. 1099
  • Authors : T. Hosotani, T. Watanabe, A. Satou, and T. Otsuji
  • Title : Terahertz emission from an asymmetric dual-grating-gate InGaAs high-electron-mobility transistor stimulated by plasmonic boom instability
  • Journal : IRMMW-THz2019: International Conference on Infrared, Millimeter, and Terahertz Waves Abstracts Book, Th-AM-6-3 (3 pages), Paris, France, Sept. 2-6, 2019.DOI: 10.1109/IRMMW-THz.2019.8874584
  • No. 1098
  • Authors : S. Manabe, T. Otsuji, and A. Satou
  • Title : Optical-to-THz frequency down-conversion utilizing two-dimensional plasmons
  • Journal : IRMMW-THz2019: International Conference on Infrared, Millimeter, and Terahertz Waves Abstracts Book, We-PM2-3-2 (3 pages), Paris, France, Sept. 2-6, 2019.DOI: 10.1109/IRMMW-THz.2019.8873711
  • No. 1097
  • Authors : J.A. Delgado Notario, V. Clerico, E.Diez, J.E. Velazquez Perez, T. Otsuji, and Y.M. Meziani
  • Title : Asymmetric dual grating gate graphene-based THz detectors
  • Journal : IRMMW-THz2019: International Conference on Infrared, Millimeter, and Terahertz Waves Abstracts Book, We-AM-6-5 (3 pages), Paris, France, Sept. 2-6, 2019.DOI: 10.1109/IRMMW-THz.2019.8873834
  • No. 1096
  • Authors : K. Nishimura, Y. Omori, T. Hosotani, T. Suemitsu, K. Iwatsuki, T. Otsuji, and A. Satou
  • Title : Photonic Double-Mixing by UTC-PD-Integrated-HEMT for Optical to MMW Carrier Frequency Down-Conversion
  • Journal : TWHM2019: 13th Topical Workshop on Heterostructure Microelectronics Abstracts Book, 6.6-2 (2 pages), Hotel Grand Terrace Toyama, Toyama, Japan, Aug. 26-29, 2019.
  • No. 1095
  • Authors : T. Otsuji
  • Title : Terahertz light amplification and lasing in graphene-channel transistor structures (in Japanese)
  • Journal : the 64th RAP: Seminar on RIKEN Center for Advanced Photonics, RIKEN Sendai, Japan, Aug. 2, 2019. (invited)
  • No. 1094
  • Authors : T. Watanabe, D. Yadav, S. Boubanga-Tombet, A. Satou, A.A. Dubinov, V. Ryzhii, and T. Otsuji
  • Title : Graphene-based van der Waals heterostructures towards a new type of terahertz quantum-cascade lasers
  • Journal : SPIE OPTICS+ Phootnics, Conf. OP412: Terahertz Emitters, Receivers, and Applications X, San Diego Convention Center, San Diego, CA, USA, Aug. 11-15, 2019. (invited); Proc. SPIE, vol. 11124, pp. 1112406-1-7, Sept. 2019.DOI: 10.1117/12.2529016
  • No. 1093
  • Authors : S. Boubanga-Tombet, D. Yadav, A. Satou, W. Knap, V.V. Popov, and T. Otsuji
  • Title : Current-driven plasmonic instability in graphene metasurfaces for terahertz applications
  • Journal : AES2019: the 7th Advanced Electromagnetics Symposium, 1A6-1, Lisbon, Portugal, July 23-26, 2019. (invited)
  • No. 1092
  • Authors : S. Boubanga-Tombet, D. Yadav, A. Satou, W. Knap, V.V. Popov, and T. Otsuji
  • Title : Current-driven plasmonic instability in graphene metasurfaces for terahertz applications
  • Journal : META2019: the 10th International Conference on Metamaterials, Photonic Crystals and Plasmonics, 2A36-6, Lisbon, Portugal, July 23-26, 2019. (invited)
  • No. 1091
  • Authors : M. Ryzhii, V. Ryzhii, V. Mitin, M.S. Shur, and T. Otsuj
  • Title : Vertical hot-electron terahertz detectors based on black-As1-xPx/graphene/black-As1-yPy heterostructures
  • Journal : Sensors and Materials, vol. 31, no. 7(2), pp. 2271-2279, July 2019.DOI: 10.18494/SAM.2019.2305
  • No. 1090
  • Authors : V. Ryzhii, T. Otsuji, and M.S. Shur
  • Title : Graphene-black Phosphorus/Arsenic heterostructures for novel terahertz and infrared devices
  • Journal : METANANO2019: 9th International Conference on Metamaterials and Nanophotonics, St. Petersburg, Russia, July 15-19, 2019. (invited, Keynote)
  • No. 1089
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V. Leiman, V.E. Karasik, D. Ponomarev, P.P. Matsev, V. Mitin, and M.S. Shur
  • Title : Graphene/black AsxP1-x heterostructures for terahertz and Infrared devices
  • Journal : RJUSE2019: 8th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies, & GDR-I FIR-LAB Workshop, Wed-1-1, Nizhny Novgorod, Russia, July 8-11, 2019. (Plenary)
  • No. 1088
  • Authors : T. Otsuji, D. Yadav, S. Boubanga-Tombet, T. Watanabe, A.A. Dubinov, and V. Ryzhii
  • Title : Graphene-based van der Waals heterostructures towards a new type of terahertz quantum-cascade lasers
  • Journal : RJUSE2019: 8th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies, & GDR-I FIR-LAB Workshop, Tu-1-1, Nizhny Novgorod, Russia, July 8-11, 2019. (Plenary)
  • No. 1087
  • Authors : K. Nishimura, Y. Omori, T. Hosotani, T. Suemitsu, K. Iwatsuki, T. Otsuji, and A. Satou
  • Title : Integration of UTC-PD structure with InGaAs HEMT for optical-to-wireless carrier frequency down-conversion
  • Journal : RJUSE2019: 8th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies, & GDR-I FIR-LAB Workshop, P-6, Nizhny Novgorod, Russia, July 8-11, 2019.
  • No. 1086
  • Authors : V.V. Utochkin, S.V. Morozov, M.A. Fadeev, V.V. Rumyantsev, N.N. Mikhailov, S.A. Dvoretsky, T. Komiyama, T. Watanabe, H. Fukidome, A. Satou, T. Otsuj
  • Title : Terahertz photoluminescence from narrow gap HgTe/CdHgTe heterostructures and multilayer graphene
  • Journal : RJUSE2019: 8th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies, & GDR-I FIR-LAB Workshop, P-13, Nizhny Novgorod, Russia, July 8-11, 2019.
  • No. 1085
  • Authors : M. Ryzhii, V.V. Mitin, V. Karasik, A. Dubinov, V. Aleshkin, M. Shur, T. Otsuji, V. Leiman, and V. Ryzhii
  • Title : Concepts of infrared and terahertz photodetectors based on vertical graphene van der Waals and HgTe-CdHgTe heterostructures
  • Journal : Opt. Electron. Rev., vol. 27, pp. 219–223, July 2019.DOI: 10.1016/j.opelre.2019.06.002
  • No. 1084
  • Authors : T. Otsuji
  • Title : Terahertz current-driven lasing and amplification in graphene-based vdW heterostructures
  • Journal : CCMR: 2019 Collaborative Conference on Materials Research, the Kintex, Goyang Gyeonggi, South Korea, June 3-7, 2019. (invited)
  • No. 1083
  • Authors : S. Boubanga-Tombet, W. Knap, A. Satou, D. But, V.V. Popov, and T. Otsuji
  • Title : Terahertz light amplification stimulated by current-driven plasmon instability in graphene-channel transistors
  • Journal : GSMM: the 12th Global Symposium onMillimeter Waves, Tohoku Univ., Sendai, Japan, May 22-24, 2019. (invited)
  • No. 1082
  • Authors : Y. Omori, T. Hosotani, T. Otsuji, K. Iwatsuki, and A. Satou
  • Title : Optical-to-millimeter-wave carrier frequency down-conversion by UTC-PD-integrated HEMT
  • Journal : CSW: Compound Semiconductor Week Dig., WeE2-4 (2 pages), Nara, Japan, May 19-23, 2019.
  • No. 1081
  • Authors : T. Otsuji
  • Title : Terahertz light emission and lasing in current-driven graphene-based 2D nano- and plasmonic-structures
  • Journal : EuroSciCon Joint Event on Laser Optics, Quantum & Plasma Physics, Stockholm, Sweden, May 5-10, 2019. (invited, keynote)
  • No. 1080
  • Authors : P. Padmanabhan, S. Boubanga-Tombet, T. Otsuji, and R. Prasankumar
  • Title : Magnetoplasmonic manipulation of THz transmission and Faraday rotation using graphene micro-ribbon arrays
  • Journal : CLEO: Int. Conf. on Lasers and Electro-Optics Dig., SW3F.2 (2 pages), Moscone Center, San Jose, CA, USA, May 5-10, 2019.DOI: 10.1364/CLEO_SI.2019.SW3F.2
  • No. 1079
  • Authors : T. Otsuji, S. Boubanga-Tombet, D. Yadav, T. Watanabe, A. Satou, and V. Ryzhii
  • Title : Terahertz light amplification of stimulated emission of radiation in current-injection graphene channel transistor
  • Journal : SPIE International Conference on Defence+ Commercial Sensing, Conference 10982 on Micro- and Nanotechnology Sensors, Systems, and Applications XI, Baltimore Convention Center, Baltimore, Maryland, USA, April 14-18, 2019. (invited); S. Boubanga-Tombet, D. Yadav, T. Watanabe, A. Satou, W. Knap, V.V. Popov, V. Ryzhii, and T. Otsuji, "Terahertz light amplification of stimulated emission of radiation in current-injection graphene channel transistor, " Proc. SPIE, vol. 10982, pp. 109822V-1-6, May 2019.DOI: 10.1117/12.2520092
  • No. 1078
  • Authors : S. Boubanga-Tombet, W. Knap, D. Yadav, A. Satou, D. but, V.V. Popov, and T. Otsuji
  • Title : Terahertz light amplification stimulated by current-driven plasmon instability in grating-gate graphene transistor structures
  • Journal : FGTC: French-German Terahertz Conference 2019, Kaiserslautern, Germany, April 2-5, 2019. (invited)
  • No. 1077
  • Authors : V. Ryzhii, M. Ryzhii, D.S. Ponomarev, V.G. Leiman, V. Mitin, M.S. Shur, and T. Otsuji
  • Title : Negative photoconductivity and hot-carrier bolometric detection of terahertz radiation in graphene-phosphorene hybrid structures
  • Journal : J. Appl. Phys., vol.125, pp. 151608-1-11, April 2019.DOI: 10.1063/1.5054142
  • No. 1076
  • Authors : T. Otsuji
  • Title : Terahertz light emission and lasing in current-driven graphenebased 2D nano-structures
  • Journal : ISPlasma2019: 11th Int. Symp. on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, 18pC04I (2 pages), Nagoya Institute of Technology, Nagoya, Japan, March 18, 2019. (invited)
  • No. 1075
  • Authors : A. Satou, Y. Omori, S. Manabe, T. Hosotani, K. Iwatsuki, and T. Otsuji
  • Title : Millimeter-wave photonic double-mixing by InGaAs-HEMTs for optical to wireless carrier frequency down-conversion
  • Journal : The 23rd International Symposium on Nanophysics and Nanoelectronics, Nizhny Novgorod, Russia, March 11-14, 2019. (invited)
  • No. 1074
  • Authors : M. Ryzhii, T. Otsuji, V. Karasik, V. Leiman, M.S. Shur, V. Ryzhii, and V. Mitin
  • Title : Characteristics of vertically stacked graphene-layer infrared photodetectors
  • Journal : Solid State Electron., vol. 155, pp. 123–128, 2019.DOI: 10.1016/j.sse.2019.03.021
  • No. 1073
  • Authors : P. Padmanabhan, S. Boubanga-Tombet, T. Otsuji, and R. Prasankumar
  • Title : Magnetoplasmonic manipulation of THz transmission and Faraday rotation using graphene micro-ribbon arrays
  • Journal : OTST: Optical Terahertz Science and Technology Dig., Tu-P-27 (1 page), Eldrado Hotel&Spa, Santa Fe, NM, USA, March 12, 2019.
  • No. 1072
  • Authors : M. Suzuki, T. Hosotani, T. Suemitsu, Y. Takida, H. Ito, H. Minamide, T. Otsuji, and A. Satou
  • Title : Introduction of 2D nanoantennas to grating-gate plasmonic THz detector for controlling Its polarization characteristics
  • Journal : OTST: Optical Terahertz Science and Technology Dig., Tu-P-13 (1 page), Eldrado Hotel&Spa, Santa Fe, NM, USA, March 12, 2019.
  • No. 1071
  • Authors : 齋藤琢, 鈴木雅也, 細谷友崇, 末光哲也, 瀧田佑馬, 伊藤弘昌. 南出泰亜, 尾辻泰一, 佐藤昭
  • Title : 二次元ナノアンテナ導入による格子ゲート構造プラズモニックTHzディテクタの偏光特性制御
  • Journal : 第66回応用物理学会春季学術講演会, 11a-S421-8, 東京工業大学大岡山キャンパス, 東京, March 9-12, 2019.
  • No. 1070
  • Authors : 眞鍋颯也, 尾辻泰一, 佐藤 昭
  • Title : 二次元プラズモンを用いたテラヘルツ帯光-無線周波数下方変換の理論解析
  • Journal : 第66回応用物理学会春季学術講演会, 11a-S421-7, 東京工業大学大岡山キャンパス, 東京, March 9-12, 2019.
  • No. 1069
  • Authors : 志賀佳菜子, 菅原健太, 佐藤昭, 吹留博一, 尾辻泰一, 内野俊
  • Title : 横型グラフェントンネルダイオードにおけるゲート電界効果の解析
  • Journal : 第66回応用物理学会春季学術講演会, 10a-W521-6, 東京工業大学大岡山キャンパス, 東京, March 9-12, 2019.
  • No. 1068
  • Authors : Y. Omori, T. Hosotani, T. Otsuji, K. Iwatsuki, and A. Satou
  • Title : UTC-PD-integrated HEMT for optical-to-millimeter-wave carrier frequency down-conversion
  • Journal : OFC: Optical Fiber Conference Dig., Th3B.5, pp. Th3B.5-1-3, San Diego, CA, USA, March 6, 2019.DOI: 10.1364/OFC.2019.Th3B.5
  • No. 1067
  • Authors : D.V. Lavrukhin, A.E. Yachmenev, I.A. Glinskiy, R.A. Khabibullin, Y.G. Goncharov, M. Ryzhii, T. Otsuji, I.E. Spector, M. Shur, M. Skorobogatiy, K.I. Zaytsev, a and D.S. Ponomarev
  • Title : Terahertz photoconductive emitter with dielectricembedded high-aspect-ratio plasmonic grating for operation with low-power optical pumps
  • Journal : iWAT: the International Workshop on Antenna Technology 2019, Florida International University (FIU) at the Graham Center, Miami, FL, USA, March 3, 2019.
  • No. 1066
  • Authors : V. Ryzhii, d T. Otsuji
  • Title : Vertical Injection in black phophorus-graphene heterostructures for terahertz lasing
  • Journal : 1&2DM Conference and Exhibition, Tokyo Big-Site, Tokyo, Japan, Feb. 28, 2019.
  • No. 1065
  • Authors : Deepika Yadav, Stephane Boubanga-Tombet, Alexander Dubinov, Victor Ryzhii, and Taiichi Otsuji
  • Title : Graphene-based van der Waals heterostructures towards a new type of quantum-cascade terahertz lasers
  • Journal : 1&2DM Conference and Exhibition, Tokyo Big-Site, Tokyo, Japan, Feb. 28, 2019. (invited, keynote)
  • No. 1064
  • Authors : T. Watanabe
  • Title : Terahertz light emitting and lasing operation in graphene-based haterostructure 2D material systems
  • Journal : The 2nd Internatioal Workshop on 2D Materials A3 Foresight Program Abstracts Book, P-1, Nanjing University, Nanging, China, Feb. 21-23, 2019.
  • No. 1063
  • Authors : T. Otsuji
  • Title : Graphene optoelectronics and plasmonics for terahertz device applications
  • Journal : The 2nd Internatioal Workshop on 2D Materials A3 Foresight Program Abstracts Book, PL-1, Nanjing University, Nanging, China, Feb. 21-23, 2019. (invited, Lecture)
  • No. 1062
  • Authors : T. Otsuji
  • Title : Graphene-based 2D-heterostructures for terahertz lasers and amplifiers
  • Journal : SPIE Photonics West, Conference 10917: Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII, 10917-15, San Fransisco, CA, USA, Feb. 5, 2019. (invited): [D. Yadav, S. Boubanga-Tombet, A. Satou, T. Tamamushi, T. Watanabe, T. Suemitsu, H. Fukidome, M. Suemitsu, A. A. Dubinov, V. V. Popov, M. Ryzhii, V. Mitin, M. S. Shur, V. Ryzhii, T. Otsuji, Proc. SPIE, vol. 10917, pp. 109170G-1-10, 2019.DOI: 10.1117/12.2516494 ]
  • No. 1061
  • Authors : V. Ryzhii, D.S. Ponomarev, M. Ryzhii, V. Mitin, M.S. Shur, and T. Otsuji
  • Title : Negative and positive terahertz and infrared photoconductivity in uncooled graphene
  • Journal : Opt. Mat. Exp., vol. 9, no. 2, pp. 585-597, 2019.DOI: 10.1364/OME.9.000585
  • No. 1060
  • Authors : D.V. Lavrukhin, A.E. Yachmenev, I.A. Glinskiy, R.A. Khabibullin, Y.G. Goncharov, M. Ryzhii, T. Otsuji, I.E. Spector, M. Shur, M. Skorobogatiy, K.I. Zaytsev, and D. Ponomarev
  • Title : Terahertz photoconductive emitter with dielectric-embedded high-aspect-ratio plasmonic grating for operation with low-power optical pumps
  • Journal : AIP Advances, vol. 9, pp. 015112-1-5, 2019.DOI: 10.1063/1.5081119
  • No. 1059
  • Authors : 尾辻泰一
  • Title : グラフェンテラヘルツレーザーの創出
  • Journal : 第14回ナノカーボン先端技術交流会, 大宮ソニックシティ4 階第4集会室, 大宮, 埼玉, Jan. 9. 2019. (invited)
  • No. 1058
  • Authors : 鈴木雅也, 細谷友崇, 末光哲也, 瀧田佑馬, 伊藤弘昌, 南出泰亜, 尾辻泰一, 佐藤昭
  • Title : 格子ゲート構造プラズモニックTHzディテクタの偏光特性制御のための二次元ナノアンテナ導入
  • Journal : 電子情報通信学会エレクトロニクスソサエティ電子デバイス研究専門委員会(ED), テラヘルツ応用システム時限研究専門委員会(THz)共催電子デバイス研究会研究技術報告, vol. 118, no. 368, ED2018-64, pp. 43-46, 東北大学電気通信研究所, 仙台, Dec. 17-18, 2018.
  • No. 1057
  • Authors : 田邉匡生, 唐超, 布施吉貴, 菅原健太, 込山貴大, 佐藤陽平, 吹留博一, 尾辻泰一, 小山裕
  • Title : SiC表面分解により生成したグラフェンの層間結合力測定
  • Journal : 電子情報通信学会エレクトロニクスソサエティ電子デバイス研究専門委員会(ED), テラヘルツ応用システム時限研究専門委員会(THz)共催電子デバイス研究会研究技術報告, vol. 118, no. 368, ED2018-59, pp. 25-26, 東北大学電気通信研究所, 仙台, Dec. 17-18, 2018.
  • No. 1056
  • Authors : 尾辻泰一
  • Title : グラフェンを利得媒質とするテラヘルツレーザー, 増幅デバイス技術
  • Journal : URSI-C 小委員会 第24期 第3回公開研究会, 秋保温泉 緑水亭, 仙台, Dec. 14, 2018. (invited)
  • No. 1055
  • Authors : D. Yadav, S. Boubanga-Tombet, G. Tamamushi, T. Watanabe, A. Satou, A. Dubinov, M. Ryzhii, V. Ryzhii, and T. Otsuji
  • Title : Terahertz current-driven plasmonic lasing and amplification
  • Journal : WINDS 18: International Workshop on Innovative Nanoscale Devices and Systems Book of Abstracts, p. 72, Westin Hapuna Beach Resort, Hawaii, USA, Nov. 25-29, 2018. (invited)
  • No. 1054
  • Authors : T. Uchino, K. Shiga, K. Sugawara, H. Fukidome, A. Satou, and T. Otsuji
  • Title : Fabrication of Gate Tunable Graphene Lateral Tunnel Diodes
  • Journal : 2018 MRS Fall Meeting Dig., NM01.07.16, Hynes Convention Center, Boston, MA, USA, Nov. 27, 2018.
  • No. 1053
  • Authors : T. Otsuji
  • Title : Emission and detection of terahertz radiation in graphene-based 2D electron devices
  • Journal : 12th Spanish Conference on Electron Devices Abstracts, pp. 69-70, Hospederia Fonseca, Univ. Salamanca, Salamanca, Spain, Nov. 14-16, 2018. (invited, plenary)
  • No. 1052
  • Authors : T. Otsuji
  • Title : Recent advances in 2D electronic and plasmonic terahertz devices utilizing graphenebased 2D materials
  • Journal : IEEE EDS Mini-Colloquium, Distinguished Lecture, IEEE Electron Device Society Spain Chapter, Hospederia Fonseca, Univ. Salamanca, Salamanca, Spain, Nov. 13, 2018. (invited)
  • No. 1051
  • Authors : T. Otsuji
  • Title : Plasmon resonances in 2DEG and their applications to high-speed electron devices
  • Journal : IEEE EDS DL Public Lecture, IEEE EDS Japan Council Chapter, Ito Campus, Kyushu University, Fukuoka, Nov. 8, 2018. (invited)
  • No. 1050
  • Authors : 尾辻泰一
  • Title : 二次元プラズモン共鳴現象を用いたテラヘルツ素子の先駆的研究
  • Journal : 応用物理学会テラヘルツ電磁波技術研究会 第1回研究討論会「テラヘルツ波, 高周波のデバイス, センシングの研究開発と応用」, JR博多シティ 10F会議室, 福岡, Nov. 7, 2018. (invited)
  • No. 1049
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, D.S. Ponomarev, V.E. Karasik, V.G .Leiman, V. Mitin and M.S. Shur
  • Title : Electrical modulation of terahertz radiation using graphene-phosphorene heterostructures
  • Journal : Semicond. Sci. Technol., vol. 33, pp. 124010-1-8, Nov. 2018.DOI:10.1088/1361-6641/aae9b2
  • No. 1048
  • Authors : T. Otsuji
  • Title : Recent advances in 2D electronic terahertz devices based on graphene-based 2D materials
  • Journal : IEEE Distinguished Lecturer Programme, UniMAP, Perlis, Malaysia, Oct. 11, 2018. (invited)
  • No. 1047
  • Authors : T. Otsuji
  • Title : Recent advances in 2D electronic and plasmonic terahertz devices based on graphene-based 2D materials
  • Journal : IMESS: IEEE International Microwave, Electron Devices, & Solid-State Circuit Symposium 2018, PSDC, Penang, Malaysia, Oct. 9-10, 2018. (invited)
  • No. 1046
  • Authors : A. Yachmenev, D. Lavrukhin, L. Glinskiy, R. Khabibullin, R. Galiev, A. Pavlov, Yu. Goncharov, I. Spektor, M. Ryzhii, T. Otsuji, K. Zaytsev, and D. Ponomarev
  • Title : Plasmonic terahertz emitters with high-aspect raio metal gratings
  • Journal : ICMNE-2018: International Conference on Nano- and Micro-Electronics Book of Abstracts, O2-16, p. 61, the Park-Hotel "Ershovo" in Zvenigorod, Moscow Region, Russia, 1-5 Oct. 2018. (invited)
  • No. 1045
  • Authors : A. Satou, Y. Omori, S. Manabe, T. Hosotani, T. Suemitsu, and T. Otsuji
  • Title : Photonic double-mixing by InGas-HEMTs for optical to MMW-THz carrier frequency down-conversion
  • Journal : ICMNE-2018: International Conference on Nano- and Micro-Electronics Book of Abstracts, L2-03, p. 44, the Park-Hotel "Ershovo" in Zvenigorod, Moscow Region, Russia, 1-5 Oct. 2018. (invited)
  • No. 1044
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V. Leiman, D. Ponomarev, P.P. Maltsev, D. Svintsov, V. Mitin, and M.S. Shur
  • Title : Graphene-phosphorene hybrid structures and their applications
  • Journal : ICMNE-2018: International Conference on Nano- and Micro-Electronics Book of Abstracts, L2-02, p. 43, the Park-Hotel "Ershovo" in Zvenigorod, Moscow Region, Russia, 1-5 Oct. 2018. (invited)
  • No. 1043
  • Authors : D. Yadav, T. Watanabe, S. Boubanga-Tombet, A. Satou, V. Ryzhii, M. Ryzhii, A.A. Dubinov, W. Knap, V.V. Popov, T. Otsuji
  • Title : Graphene-based 2D heterostructures for terahertz photonic and plasmonic light-sources applications
  • Journal : ICMNE-2018: International Conference on Nano- and Micro-Electronics Book of Abstracts, L2-01, p. 42, the Park-Hotel "Ershovo" in Zvenigorod, Moscow Region, Russia, 1-5 Oct. 2018. (invited)
  • No. 1042
  • Authors : D.V. Lavrukhin, A.E. Yachmenev, I.A. Glinskiy, R.A. Khavibullin, Yu G. Goncharov, M. Ryzhii, T. Otsuji, K.I. Zaytsev, and D.S. Ponomarev
  • Title : Terahertz photoconductive emitters with plasmonic gratings: modeling and experiment
  • Journal : RJUSE: the 7th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Book of Abstracts, Fri-3-2, p. 136, CBF Nowy Swiat, Warsaw, Poland, 17-21 Sept. 2018. (invited)
  • No. 1041
  • Authors : M. Suzuki, T. Hosotani, T. Otsuji, T. Suemitsu, Y. Takida, H. Ito, H. Minamide, and A. Satou
  • Title : 2D diffraction grating for controlling polarization characteristics of grating-gate plasmonic THz detector
  • Journal : RJUSE: the 7th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Book of Abstracts, Fri-2-4, pp. 130-131, CBF Nowy Swiat, Warsaw, Poland, 17-21 Sept. 2018.
  • No. 1040
  • Authors : T. Otsuji, D. Yadav, S. Boubanta-Tombet, T. Watanabe, A. Satou, A.A. Dubinov, M. Ryzhii, V.V. Popov, W. Knap, V. Mitin, M.S. Shur, and V. Ryzhii
  • Title : Emission and amplification of terahertz radiation using Dirac fermions and plasmons in graphene
  • Journal : RJUSE: the 7th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Book of Abstracts, Fri-2-3, pp. 128-129, CBF Nowy Swiat, Warsaw, Poland, 17-21 Sept. 2018. (invited)
  • No. 1039
  • Authors : J.A. Delgado Notario, V. Clerico, Y.M. Meziani, E. Diez, J.E. velazquez, T. Taniguchi, K. Watanabe, D. Yadav, and T. Otsuji
  • Title : Terahertz detection by bilayer graphene multifinger field effect transistor
  • Journal : RJUSE: the 7th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Book of Abstracts, Fri-2-1, pp. 124-125, CBF Nowy Swiat, Warsaw, Poland, 17-21 Sept. 2018. (invited)
  • No. 1038
  • Authors : A.A. Dubinov, V.Ya. Aleshkin, S.V. Morozov, V. Ryzhii, and T. Otsuji
  • Title : Terahertz plasmon-emitting graphene-channel transistor
  • Journal : RJUSE: the 7th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Book of Abstracts, Fri-1-4, pp. 122-123, CBF Nowy Swiat, Warsaw, Poland, 17-21 Sept. 2018.
  • No. 1037
  • Authors : A. Satou, Y. Ohmori, S. Manabe, T. Hosotani, T. Suemitsu, and T. Otsuji
  • Title : Carrier frequency down-conversion from optical to MMW/THz data signal using InGaAs-HEMT
  • Journal : RJUSE: the 7th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Book of Abstracts, Wed-2-2, pp. 70-72, CBF Nowy Swiat, Warsaw, Poland, 17-21 Sept. 2018. (invited)
  • No. 1036
  • Authors : M. Ryzhii, T. Otsuji, V. Ryzhii, V. Aleshkin, A. Dubinov, V.E. Karasik, V. Leiman, V. Mitin, and M.S. Shur
  • Title : Concepts of infrared and terahertz photodetectors based on vertical graphene and HgTe-CdHgTe heterotructures
  • Journal : RJUSE: the 7th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Book of Abstracts, Tue-4-3, pp. 51-53, CBF Nowy Swiat, Warsaw, Poland, 17-21 Sept. 2018. (invited)
  • No. 1035
  • Authors : 志賀佳菜子, 菅原健太, 佐藤昭, 吹留博一, 尾辻泰一, 内野俊
  • Title : ALD-Al2O3を用いた横型グラフェントンネルダイオードの作製
  • Journal : 2018年第79回応用物理学会秋季学術講演会, 18p-PB3-47, 名古屋国際会議場, 名古屋, 愛知, 18-21 Sept. 2018.
  • No. 1034
  • Authors : V. Ryzhii, M. Ryzhii, D. Svintsov, V.G. Leiman, P.P. Maltsev, D.S. Ponomarev, V. Mitin, M.S Shur, and T. Otsuji
  • Title : Real-space-transfer mechanism of negative differential conductivity in gated graphene-phosphorene hybrid structures: Phenomenological heating model
  • Journal : J. Appl. Phys., vol. 124, iss. 114501, pp. 114501-1-9, Sept. 2018.DOI: 10.1063/1.5046135
  • No. 1033
  • Authors : S. Boubanga-Tombet, D. Yadav, W. Knap, V. Popov, and T. Otsuji
  • Title : Terahertz light amplification by instability-driven stimulated emission of graphene plasmon polaritons
  • Journal : IRMMW-THz: the 43rd International Conference on Infrared, Millimeter and Terahertz Waves Dig., Tu-A2-R2-5, Nagoya, Aichi, Japan, 9-14 Sept. 2018.DOI: 10.1109/IRMMW-THz.2018.8510241
  • No. 1032
  • Authors : M. Suzuki, T. Hosotani, T. Otsuji, T. Suemitsu, Y. Takida, H. Ito, H. Minamide, and A. Satou
  • Title : Coupling of 2D plasmons in grating-gate plasmonic THz detector to THz wave with lateral polarization
  • Journal : IRMMW-THz: the 43rd International Conference on Infrared, Millimeter and Terahertz Waves Dig., Tu-A2-1a-2, Nagoya, Aichi, Japan, 9-14 Sept. 2018.DOI: 10.1109/IRMMW-THz.2018.8510281
  • No. 1031
  • Authors : 大森雄也, 細谷友崇, 末光哲也, 尾辻泰一, 佐藤昭
  • Title : UTC-PD構造を集積したInP-HEMTによる光-ミリ波帯周波数下方変換
  • Journal : 信学会ソサエティ大会, C-14-9, 金沢大学 角間キャンパス, 金沢, Sept. 11-14, 2018.
  • No. 1030
  • Authors : A. Satou, M. Suzuki, T. hosotani, Y. Takida, H. Ito, H. Minamide, T. Suemitsu, and T. Otsuji
  • Title : THz devices based on transistors incorporated with 2D plasmonic metamaterial structures
  • Journal : A3 Metamaterials Forum 2018, I18, POSTECH, Korea, 12-15 Aug. 2018. (invited)
  • No. 1029
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V.E. Karasik, V.G. Leiman, V. Mitin, M.S. Shur, V. Ya. Aleshkin, A.A. Dubinov, and S.V. Morozov
  • Title : Comparison of infrared and terahertz photodetectors based on graphene, CdHgTe, and A3B5 quantumwell heterostructures
  • Journal : PIERS: Progress in Electromagnetics Research Symposium, 4P14a-2I, Toyama, japan, 1-4 Aug., 2018. (invited)
  • No. 1028
  • Authors : Juan Antonio Delgado Notario, Vito Clerico, Yahya Moubarak Meziani, Enrique Diez, Jesus Enrique Velazquez-Perez, Takashi Taniguchi, Kenji Watanabe, Deepika Yadav, Taiichi Otsuji
  • Title : Terahertz detection with asymmetric dual grating gate bilayer graphene field-effect-transistor
  • Journal : PIERS: Progress in Electromagnetics Research Symposium, 4A14-5I, Toyama, japan, 1-4 Aug., 2018. (invited)
  • No. 1027
  • Authors : W. Knap, S. Boubanga-Tombet, D. Yadav, V. Popov, T. Otsuji
  • Title : Frequency-tunable terahertz light amplification by current-driven plasmon instabilities in graphene metamaterials
  • Journal : ICPS: 34th International Conference on the Physics of Semiconductors Dig., P1_114, Le Corum Palais des Congrès, Montpellier, France, 29 July - 3 Aug., 2018.
  • No. 1026
  • Authors : T. Otsuji
  • Title : Terahertz light emission and lasing in graphene under current-injection pumping
  • Journal : European Conf. on Lasers, Optics and Photonics, Dig., p. 18, Prague, Czech Republic, July 16-17, 2018.DOI: 10.21767/2349-3917-C1-001
  • No. 1025
  • Authors : M. Suzuki, T. Hosotani, T. Otsuji1, T. Suemitsu, Y. Takida, H. Ito, H. Minamide, and A. Satou
  • Title : Introduction of 2D Diffraction Grating into Grating-Gate Plasmonic THz Detector for Controlling Its Polarization Characteristics
  • Journal : AWAD 2018: the 26th Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices Dig., Kitakyushu, Japan, Jul. 2-4, 2018.
  • No. 1024
  • Authors : S. Boubanga-Tombet, D. Yadav, W. Knap, V.V. Popov, and T. Otsuji
  • Title : Graphene-channel-transistor terahertz amplifier
  • Journal : DRC: the 76th Annual Device Research Conference Dig., pp. 1-2, UCSB, CA, USA, June 24-27, 2018.DOI: 10.1109/DRC.2018.8442272
  • No. 1023
  • Authors : J.A. Delgado-Notario, V. Clerico, E. Diez, J.E. Velazquez-Perez, T. Taniguchi, K. Watanabe, D. Yadav, T. Otsuji, and Y.M. Meziani
  • Title : Grating-gated graphene-based heterostructures for detection of Terahertz radiation
  • Journal : Graphene 2018 Dig., p. 197, Dresden, Germany, June 27, 2018.
  • No. 1022
  • Authors : Kenta Sugawara, Norifumi Endo, Takayuki Watanabe, Takahiro Komiyama, Yoshiki Fuse, Hirokazu Fukidome, Maki Suemitsu, and Taiichi Otsuji
  • Title : Improved crystallographic high quality of thermally decomposed epitaxial graphene on 6H-SiC
  • Journal : Graphene 2018 Dig., P01, Dresden, Germany, June 27, 2018.
  • No. 1021
  • Authors : T. Otsuji
  • Title : Graphene-based 2D heterostructure materials for terahertz photonics and plasmonics light-sources applications
  • Journal : 2nd Global Summit & Expo on Laser Optics & Photonics 2018 Dig., pp. 1-2, Rome, Italy, June 14-16, 2018. (Invited)
  • No. 1020
  • Authors : S. Boubanga-Tombet, D. Yadav, W. Knap. V.V. Popov, and T. Otsuji
  • Title : Terahertz light amplification by current-driven plasmon instabilities in graphene
  • Journal : CLEO: Int. Conf. on Lasers and Electro-Optics Dig., SW4D.4, San Jose, CA, USA, May 13-18, 2018.DOI: 10.1364/CLEO_SI.2018.SW4D.4
  • No. 1019
  • Authors : T. Otsuji
  • Title : Terahertz light emission and lasing in graphene-based vdW 2D heterostructures
  • Journal : Journal of Nanomaterials & Molecular Nanotechnology [Proc. of the 24th World Nano Conference, Black Hotel Rome, Rome, Italy, May 7-8, 2018.], vol. 7, pp. 59-60, May 2018. (Invited)DOI: 10.4172/2324-8777-C2-023
  • No. 1018
  • Authors : G. Alymov, V. Vyurkov, V. Ryzhii, A. Satou, and D. Svintsov
  • Title : Auger recombination in Dirac materials: A tangle of many-body effects
  • Journal : Phys. Rev. B, vol. 97, iss. 20, pp. 205411-1-13, May 2018.DOI: 10.1103/PhysRevB.97.205411
  • No. 1017
  • Authors : V. Aleshkin, A. Dubinov, S. Morozov, M. Ryzhii, T. Otsuji, V. Mitin, M. Shur, and V. Ryzhii
  • Title : Interband infrared photodetectors based on HgTe-CdHgTe quantum-well heterostructures
  • Journal : Opt. Mat. Exp., vol. 8, no. 5, pp. 1349-1358, Apr. 2018.DOI: 10.1364/OME.8.001349
  • No. 1016
  • Authors : D. Yadav, T. Watanabe, A. Satou, M. Ryzhii, V. Ryzhii, and T. Otsuji
  • Title : Terahertz light emission and lasing in current-injection graphene-channel transistors
  • Journal : 2nd Edition of Graphene & Semiconductors | Diamond, Graphite & Carbon Materials Conference Abstracts, p. 43, Las Vegas, NV, USA, April 16-17, 2018. (Invited)DOI: 10.4172/2169-0022-C3-097
  • No. 1015
  • Authors : I. Gayduchenko, G. Fedorov, M. Moskotin, D. Yagodkin, S. Seliverstov, G. Gol'tsman, A. Kuntsevich, M. Rybin, E. Obraztsova, V. Leiman, M. Shur, T. Otsuji, and V. Ryzhii
  • Title : Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene based devices
  • Journal : Nanotechnology, vol. 29, no. 24, pp. 245204-1-8, April 2018.DOI: 10.1088/1361-6528/aab7a5
  • No. 1014
  • Authors : 菅原健太, 渡辺隆之, 込山貴大, 布施吉貴, Ryzhii Maxim, Ryzhii Victor, 遠藤則史, 吹留博一, 末光眞希, 尾辻泰一
  • Title : SiC 基板の熱分解法によるグラフェンの結晶品質向
  • Journal : 第65回応用物理学会春季学術講演会, 17a-C202-2, 早稲田大学, 東京, March 13-20, 2018.
  • No. 1013
  • Authors : T. Otsuji
  • Title : Terahertz light emission and lasing in graphene-based van der Waals 2D heterostructures
  • Journal : XXII International Symposium on Nanophysics and Nanoelectronics Dig., pp. 6A-I1-1-2, Niznhy Novgorod, Russia, March 12-16, 2018. (invited)
  • No. 1012
  • Authors : T. Otsuji
  • Title : Emission and detection of terahertz radiation using graphene-based atomically-thin 2D heterostructures
  • Journal : MANA Int. Symp. Dig., pp. S2-2I-1-2, Tsukuba, Japan, March 5-7, 2018. (invited)
  • No. 1011
  • Authors : Dmitry Ponomarev, Denis Lavrukhin, Alexander Yachmenev, Rustam Khabibullin, Igor Semenikhin, Vladimir Vyurkov, Maxim Ryzhii, Taiichi Otsuji, and Victor Ryzhii
  • Title : Lateral terahertz hot-electron bolometer based on an array of Sn nanothreads in GaAs
  • Journal : J. Phys. D: Appl. Phys., vol. 51, no. 13, fpp. 135101-1-8, 2018.DOI: 10.1088/1361-6463/aab11d
  • No. 1010
  • Authors : T. Otsuji
  • Title : Graphene-based 2D materials -their physics and technology to create terahertz lasers
  • Journal : Energy Colloquium, SKOLTECH, Skolkovo, Moscow Region, Russia, Feb. 27, 2018.
  • No. 1009
  • Authors : D. Yadav, G. Tamamushi, T. Watanabe, J. Mitsushio, Y. Tobah, K. Sugawara, A.A. Dubinov, A. Satou, M. Ryzhii, V. Ryzhii, and T. Otsuji
  • Title : Terahertz light-emitting graphene-channel transistor toward single-mode lasing
  • Journal : Nanophotonics, vol. 7, iss. 4, pp. 741-752, Apr. 2018.DOI: 10.1515/nanoph-2017-0106
  • No. 1008
  • Authors : V. Ryzhii, T. Otsuji, V.E. Karasik, M. Ryzhii, V.G. Leiman, V. Mitin, and M.S. Shur
  • Title : Comparison of intersubband quantum-well and interband graphene-layer infrared photodetectors
  • Journal : IEEE J. Quantum Electron., vol. 54, iss. 2, pp. 40000108-1-8, 2018.DOI: 10.1109/JQE.2018.2797912
  • No. 1007
  • Authors : V. Ryzhii, M.S. Shur, M. Ryzhii, V.E. Karasik, and T. Otsuji
  • Title : Device model for pixelless infrared image up-converters based on polycrystalline graphene heterostructures
  • Journal : J. Appl. Phys., vol. 123, pp. 014503-1-9, Jan. 2018.DOI: 10.1063/1.5011712
  • No. 1006
  • Authors : 大森雄也, 細谷友崇, 尾辻泰一, 岩月勝美, 末光哲也, 日隈薫, 市川潤一郎, 坂本高秀, 山本直克, 佐藤昭
  • Title : InP-HEMTによる光-ミリ波帯キャリア周波数下方変換
  • Journal : 電子情報通信学会電子デバイス研究会, 東北大学電気通信研究所, 仙台, Dec. 18, 2017; 信学技報, vol. 117, no. 364, ED2017-83, pp. 41-45, Dec. 18, 2017.
  • No. 1005
  • Authors : 菅原健太, 渡辺隆之, ヤダフ ディピカ, 込山貴大, 布施吉貴, リジー マキシム, リジー ヴィクトール, 吹留博一, 末光眞希, 尾辻泰一
  • Title : デュアルゲートグラフェンFETの相互コンダクタンスの温度依存性
  • Journal : 電子情報通信学会電子デバイス研究会, 東北大学電気通信研究所, 仙台, Dec. 18, 2017; 信学技報, vol. 117, no. 364, ED2017-91, pp. 73-76, Dec. 2017.
  • No. 1004
  • Authors : T. Otsuji
  • Title : Recent advances in 2D electronic and plasmonic terahertz devices based on graphene-based 2D materials
  • Journal : IEEE-EDS Distinguished Lecture, IEEE-EDS Japan Joint Chapter, RIEC, Tohoku Univ. Katahira Campus, Dec. 18, 2018. (DL)
  • No. 1003
  • Authors : T. Otsuji
  • Title : Plasmon resonances in 2DEG and their applications to high-speed electron devices
  • Journal : IEEE-EDS Distinguished Lecture, IEEE-EDS Japan Joint Chapter, Kyushu Univ. Ito Campus, Dec. 14, 2018. (DL)
  • No. 1002
  • Authors : 尾辻泰一
  • Title : プラズモン共鳴によるテラヘルツ波発生の物理とその光源素子への応用
  • Journal : レーザー研究, vol. 45, no. 12, pp. 746-751, Dec. 2017.
  • No. 1001
  • Authors : V. Ryzhii, T. Otsuji, and M.S. Shur
  • Title : Concepts of infrared and terahertz photodetectors based on van der Waals heterostructures with graphene layers
  • Journal : WINDS17: 2017 International Workshop on Innovative Nanoscale Devices and Systems Abstracts, S3-2 (2 pages), Big Island Hawaii, USA, Nov 26 - Dec. 1, 2017. (invited)
  • No. 1000
  • Authors : D. Yadav, T. Watanabe, S. Boubanga-Tombet, A. Satou, V. Ryzhii, and T. Otsuji
  • Title : Terahertz light emission and lasing in graphene-based van der Waals 2D heterostructures
  • Journal : WINDS17: 16: 2017 International Workshop on Innovative Nanoscale Devices and Systems Abstracts, S3-3 (2 pages), Big Island Hawaii, USA, Nov 26 - Dec. 1, 2017. (invited)
  • No. 999
  • Authors : M. Ryzhii, V. Ryzhii, T. Otsuji, and M.S. Shur
  • Title : Detection and up-conversion of infrared radiation using van der Waals heterostructures with graphene layers
  • Journal : IEEE COMCAS: International Conference on Microwave, Communications, Antennas and Electronic systems Dig., pp. 1-4, David Intercontinental Hotel, Tel Aviv, Israel, Nov. 13-15, 2017.DOI: 10.1109/COMCAS.2017.8244783
  • No. 998
  • Authors : T. Otsuji
  • Title : Terahertz light emission and lasing in graphene transisters under current-injection pumping
  • Journal : MTSA2017-CTOXMAND-TeraNano-8 Dig., p. WeA1-I2-1-2, Okayama, Japan, Nov. 19-23, 2017. (invited)
  • No. 997
  • Authors : T. Otsuji
  • Title : Terahertz Light Emission and Lasing in Graphene-Based 2D Heterostructures
  • Journal : RIEC International Symposium on Photonics and Optical Communications 2017 (ISPOC 2017) Dig., (a page), Sendai, Japan, Oct. 25-26, 2017. (invited)
  • No. 996
  • Authors : Y. Omori, T. Hosotani, T. Suemitsu, K. Iwatsuki, T. Otsuji, K. Higuma, J. Ichikawa, T. Sakamoto, N. Yamamoto, and A. Satou
  • Title : Carrier-frequency down-conversion from optical data signal to MMW/THz data signal by using InP-HEMT
  • Journal : RIEC International Symposium on Photonics and Optical Communications 2017 (ISPOC 2017) Dig., (1 page), Sendai, Japan, Oct. 25-26, 2017.
  • No. 995
  • Authors : T. Hosotani, F. Kasuya, M. Suzuki, T. Suemitsu, T. Otsuji, Y. Takida, H. Ito, H. Minamide, T. Ishibashi, M. Shimizu, and A. Satou
  • Title : High-speed pulse response of asymmetric-dual-grating-gate plasmonic THz detector
  • Journal : RIEC International Symposium on Photonics and Optical Communications 2017 (ISPOC 2017) Dig., (a page), Sendai, Japan, Oct. 25-26, 2017.
  • No. 994
  • Authors : T. Hosotani, F. Kasuya, M. Suzuki, T. Suemitsu, T. Otsuji, Y. Takida, H. Ito, H. Minamide, T. Ishibashi, M. Shimizu, and A. Satou
  • Title : Response speed of asymmetric-dual-grating-gate high-electron-mobility-transistor for terahertz detection
  • Journal : RJUSE TeraTech 2017: Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Dig., IV-O2 (1page), Rensselaer Polytechnic Institute, Troy, NY, USA, Oct. 1-5, 2017.
  • No. 993
  • Authors : K. Sugawara, T. Watanabe, T. Komiyama, T. Fuse, M. Ryzhii, V. Ryzhii, H. Fukidome, M. Suemitsu, and T. Otsuji
  • Title : Temperature dependence of the conductivity in dual gate graphene field effect transistors
  • Journal : RJUSE TeraTech 2017: Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Dig., IV-O1 (1 page), Rensselaer Polytechnic Institute, Troy, NY, USA, Oct. 1-5, 2017.
  • No. 992
  • Authors : V. Mitin, V. Ryzhii, M. Ryzhii, T. Otsuji, and M.S. Shur
  • Title : Infrared and terahertz detectors on graphene van der Waals heterostructures and effect of doping
  • Journal : RJUSE TeraTech 2017: Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Dig., V-I4, Rensselaer Polytechnic Institute, Troy, NY, USA, Oct. 1-5, 2017. (invited)
  • No. 991
  • Authors : T. Otsuji, D. Yadav, T. Watanabe, S. Boubanga-Tombet, A. Satou, T. Suemitsu, V. Ryzhii, A.A. Dubinov, M. Ryzhii, V. Mitin, and M.S. Shur
  • Title : Terahertz light emission and lasing in graphene transistors under current-injection pumping
  • Journal : RJUSE TeraTech 2017: Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Dig., I-P2 (1 pages), Rensselaer Polytechnic Institute, Troy, NY, USA, Oct. 1-5, 2017. (invited, plenary)
  • No. 990
  • Authors : T. Otsuji
  • Title : Terahertz light emission and lasing in graphene-based vdW 2D heterostructures
  • Journal : RPGR2017: Int. Conf. Recent Progress in Graphene and 2D Materials Research, Singapore, Sept. 19-22, 2017. (invited)
  • No. 989
  • Authors : O. Polischuk, D. Fateev, T. Otsuji, and V. Popov
  • Title : Terahertz amplification by plasmons in periodic graphene structure with the carrier injection
  • Journal : NANOP 2017: International Conference on Nanophotonics and Micro/Nano Optics, Barcelona, Spain, Sept. 13-15, 2017.
  • No. 988
  • Authors : T. Otsuji
  • Title : Terahertz light emission and lasing in graphene-based heterostructure 2D material systems -theory and experiments
  • Journal : NANOP 2017: International Conference on Nanophotonics and Micro/Nano Optics Abstract Book, pp. 115-116, Barcelona, Spain, Sept. 13-15, 2017. (invited)
  • No. 987
  • Authors : 大森雄也, 細谷友崇, 末光哲也, 尾辻泰一, 岩月勝美
  • Title : InP-HEMTを用いたASK/BPSK光データ信号のミリ波帯IFデータ信号へのキャリア周波数下方変換
  • Journal : 平成29年度2017年電子情報通信学会ソサイエティ大会予稿集, C-14-6 (1 page), 東京都市大学 世田谷キャンパス, 東京, Sept. 12-15, 2018.
  • No. 986
  • Authors : 鈴木雅也, 細谷友崇, 尾辻泰一, 佐藤昭
  • Title : 非対称二重格子ゲートHEMTの赤外光吸収特性とプラズモニックTHzフォトミキシング特性
  • Journal : 2017年 第78回応用物理学会秋季学術講演会予稿集, 6a-PA3-6 (1 page), 福岡国際会議場, 福岡, Sept. 5-8, 2018.
  • No. 985
  • Authors : 尾辻泰一
  • Title : 二次元原子薄膜ヘテロ接合の創製とその新原理テラヘルツ光電子デバイス応用
  • Journal : 2017年 第78回応用物理学会秋季学術講演会予稿集, 6p-C16-1 (1 page), 福岡国際会議場, 福岡, Sept. 5-8, 2018. (invited)
  • No. 984
  • Authors : 志賀佳菜子, 竹澤政記, 菅原健太, 尾辻泰一, 内野俊
  • Title : ゲート付きグラフェントンネルダイオードの電気特性
  • Journal : 2017年 第78回応用物理学会秋季学術講演会予稿集, 5p-PA1-54 (1 page), 福岡国際会議場, 福岡, Sept. 5-8, 2018.
  • No. 983
  • Authors : D. Yadav, Y. Tobah, K. Sugawara, J. Mitsushio, G. Tamamushi, T. Watanabe, A.A. Dubinov, M. Ryzhii, V. Ryzhii, and T. Otsuji
  • Title : Terahertz light emitting transistor based on current inection dual-gate graphene-channel FET
  • Journal : IRMMW-THz: 42nd International Conference on Infrared, Millimeter and Terahertz Waves Dig., WB3.5, Cancun, Quintana Roo, Mexco, Aug. 27 - Sept. 1, 2017.DOI: 10.1109/IRMMW-THz.2017.8067215
  • No. 982
  • Authors : K.-T. Lin, Q. Weng, H. Nema, S. kim, K. Sugawara, T. Otsuji, S. Komiyama, and Y. Kajiwara
  • Title : Near-field nanoscopy of current-induced excess noise in graphene
  • Journal : IRMMW-THz: 42nd International Conference on Infrared, Millimeter and Terahertz Waves Dig., WC1.1, Cancun, Quintana Roo, Mexco, Aug. 27 - Sept. 1, 2017.DOI: 10.1109/IRMMW-THz.2017.8067243
  • No. 981
  • Authors : J.A. Delgado Notario, V. Clerico, Y.M. Meziani, E. Diez, J.E. Velázquez, T. Taniguchi, K. Watanabe, D. Yadav, and T. Otsuji
  • Title : Asymmetric dual grating gate bilayer graphene FET for detection of terahertz radiation
  • Journal : IRMMW-THz: 42nd International Conference on Infrared, Millimeter and Terahertz Waves Dig., WB3.2, Cancun, Quintana Roo, Mexco, Aug. 27 - Sept. 1, 2017.DOI: 10.1109/IRMMW-THz.2017.8067235
  • No. 980
  • Authors : T. Hosotani, F. Kasuya, M. Suzuki, T. Suemitsu, T. Otsuji, Y. Takida, H. Ito, H. Minamide, T. Ishibashi, M. Shimizu, and A. Satou
  • Title : High-speed pulse response of asymmetric-dual-grating-gate high-electron-mobility-transistors for plasmonic THz detection
  • Journal : IRMMW-THz: 42nd International Conference on Infrared, Millimeter and Terahertz Waves Dig., MD.30, Cancun, Quintana Roo, Mexco, Aug. 27 - Sept. 1, 2017.DOI: 10.1109/IRMMW-THz.2017.8066947
  • No. 979
  • Authors : K. Sugawara, D. Yadav, Y. Tobah, J. Mitsushio, G. Tamamushi, T. Watanabe, A.A. Dubinov, M. Ryzhii, V. Ryzhii, and T. Otsuji
  • Title : Terahertz light emitting graphene-channel transistor operating uner current-injection pumping
  • Journal : TWHM: Topical Workshop on Heterostructure Microelectronics Dig., S2-4 (2 pages), Kagoshima, Japan, Aug. 28-31, 2017.
  • No. 978
  • Authors : Y. Omori, T. Hosotani, T. Suemitsu, K. Iwatsuki, T. Otsuji, and A. Satou
  • Title : Frequency down-conversion from optical data signal to MMW IF data signal using InP-HEMT
  • Journal : The 24th Congress of the International Commissions for Optics, Paper No. Tu2G-05 (2 pages), Keio-Plaza Hotel, Tokyo, 21-25 Aug. 2017.
  • No. 977
  • Authors : O.V. Polischuk, D. V. Fateev, T. Otsuji, and V.V. Popov
  • Title : Plasmonic amplification of terahertz radiation in a preriodic graphene structure with the carrier injection
  • Journal : Appl. Phys. Lett., vol. 111, iss. 8, pp. 081110-1-4, Aug. 2017.DOI: 10.1063/1.4990620
  • No. 976
  • Authors : T. Otsuji, D. Yadav, T. Watanabe, S.A. Boubanga-Tombet, V. Ryzhii, A.A. Dubinov, D. Svintsov, M. Ryzhii, V. Mitin, and M.S. Shur
  • Title : Broadband terahertz light emission and lasing in graphene-based van der Waals heterostructures
  • Journal : EMN: Energy Materials Nanotechnology Lyon Meeting on 2D Materials Dig., pp. 42-44, Lyon, France, Aug. 9-11, 2017. (invited)
  • No. 975
  • Authors : A. Satou, d T. Otsuji
  • Title : Millimeter-wave/terahertz detection and photonic double-mixing by transistors
  • Journal : SPIE OPTO+ Photonics, Conference on Infrared Remote Sensing and Instrumentation XXV, 104003-27, San Diego Convention Center, San Diego, CA, USA, 6-10 Aug. 2017; Proc. SPIE, vol. 10403, pp. 104030S1-12, Aug. 2017.DOI: 10.1117/12.2275531
  • No. 974
  • Authors : K.-T. Lin, Q. Weng, H. Nema, S. kim, K. Sugawara, T. Otsuji, S. Komiyama, and Y. Kajiwara
  • Title : Niar-field nanoscopy of shot noise in bilayer graphene
  • Journal : EP2DS: 22nd International Conference on Electronic Properties of Two Dimensional Systems Abst., 2DO-9, Penn State Univ., PA, USA, July 31-August 4, 2017.
  • No. 973
  • Authors : V. Ryzhii, M. Ryzhii, V. Leiman, V. Mitin, M.S. Shur, and T. Otsuji
  • Title : Effect of doping on the characteristics of infrared photodetectors based on van der Waals heterostructures with multiple graphene layers
  • Journal : J. Appl. Phys., vol. 122, pp. 054505-1-8, Aug. 2017.DOI: 10.1063/1.4997459
  • No. 972
  • Authors : J.A. Delgado Notario, E. Javadi, V. Clericò, K. Fobelets, T. Otsuji, E. Diez, J.E. Velázquez-Pérez and Y.M. Meziani
  • Title : Experimental and theoretical studies of Sub-THz detection using strained-Si FETs
  • Journal : 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 20), Buffalo, New York, USA, 17–21 July 2017; J.A. Delgado Notario, E. Javadi, V. Clericò, K. Fobelets, T. Otsuji, E. Diez, J.E. Velázquez-Pérez and Y.M. Meziani, "Experimental and theoretical studies of Sub-THz detection using strained-Si FETs, "Journal of Physics: Conference Series, vol. 906, pp. 012003-1-4, 2017.doi: 10.1088/1742-6596/906/1/012003
  • No. 971
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V.E. Karasik, and M.S. Shur
  • Title : Infrared detection and photon energy up-conversion in graphene layer infrared photodetectors integrated with LEDs based on van der Waals heterostructures: concept, device model, and characteristics
  • Journal : Infrared Phys. Technol., vol. 85, pp. 307-314, July 2017.DOI: 10.1016/j.infrared.2017.07.018
  • No. 970
  • Authors : Fuyumi Hemmi, Cedric Thomas, Yi-Chun Lai, Akio Higo, Yoh Watamura, Seiji Samukawa, Taiichi Otsuji, and Tetsuya Suemitsu
  • Title : Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse
  • Journal : Solid-State Electron., vol. 137, pp. 1-5, July 2017.DOI: 10.1016/j.sse.2017.07.015
  • No. 969
  • Authors : T. Otsuji, T. Watanabe, A. Satou, D. Yadav, S. Boubanga-Tombet, T. Suemitsu, and V. Ryzhii
  • Title : Terahertz light emission in graphene-based active plasmonic metamaterial heterostructures
  • Journal : META'17: the 8th International Conference on Metamaterials, Photonic Crystals and Plasmonics Abstract Book, Paper ID: SP22.I2, Incheon, Korea, 25-28 July 2017. (invited)
  • No. 968
  • Authors : T. Komatsu, V. Ryzhii, T. Otsuji, D. Svintsov, and A. Satou
  • Title : Temperature-Dependent Broadening of Carrier Energy Dispersion in Graphene by Electron-Electron Interaction and Its Effect on Auger Scatterings
  • Journal : The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 20) Dig., MoP23 (1 page), University at Buffalo, Buffalo, NY, USA, 17-21 July, 2017.
  • No. 967
  • Authors : J.A. Delgado Notario, V. Clericó, T. Otsuji, J.E. Velázquez-Pérez, Y.M. Meziani, and E. Diez
  • Title : hBN/graphene devices: Fabrication and characterization
  • Journal : The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 20) Dig., MoP25 (1 page), Buffalo, New York, USA, 17–21 July 2017.
  • No. 966
  • Authors : V. Ryzhii, and T. Otsuji
  • Title : Graphene-based heterostructures: Device concepts and prospects
  • Journal : The 25th International Symposium "Nanostructures: Physics and Technology", GRN.02i, St. Petersburg, Russia, June 26-30, 2017. (invited)
  • No. 965
  • Authors : D. Yadav, Y. Tobah, K. Sugawara, J. Mitsushio, G. Tamamushi, T. Watanabe, A.A. Dubinov, M. Ryzhii, V. Ryzhii, and T. Otsuji
  • Title : Terahertz LED based on current-injection dual-gate graphene-channel field effect transistors
  • Journal : DRC: 75th Annual Device Research Conference Dig., pp. 273-274, Notre Dame, IN, USA, May 26-28, 2017.DOI: 10.1109/DRC.2017.7999519
  • No. 964
  • Authors : A. Satou, and T. Otsuji
  • Title : MMW Photonic Double-Mixing and THz Plasmonic Detection Using InP HEMTs
  • Journal : Global Symposium on Lasers, Optics, and Photonics, Valencia, Spain, June 19-21, 2017. (invited)
  • No. 963
  • Authors : T. Hosotani, F. Kasuya, H. Taniguchi, T. Watanabe, T. Suemitsu, T. Otsuji, T. Ishibashi, M. Shimizu, and A. Satou
  • Title : Lens-integrated asymmetric-dual-grating-gate high-electron-mobility-transistor for plasmonic terahertz detection
  • Journal : IEEE IMS: 2017 IEEE Int. Microwave Symposium Dig., TUIF2, pp. 578-581, Honolulu, Hawaii, USA, June 4-9, 2017.DOI: 10.1109/MWSYM.2017.8058632
  • No. 962
  • Authors : T. Otsuji
  • Title : Current-injection terahertz lasing in graphene-based transistor lasers
  • Journal : ETCMOS: Int. Conf. on Emerging Technology on CMOS and Related Devices, B3-1, Hotel Sofitel Warsaw Victoria, Warsaw, Poland, May 28-30, 2017. (invited)
  • No. 961
  • Authors : Andrey Bylinkin, Dmitry Svintsov, Victor Ryzhii, and Taiichi Otsuji
  • Title : Resonance tunneling of photons and surface plasmons in graphene-based heterostructures
  • Journal : The 38th PIERS: Progress in Electromagnetics Research Symposium Abstracts, p. 1A_12a-1, St. Petersburg, Russia, 22-25 May, 2017.
  • No. 960
  • Authors : Victor Ryzhii, Taiichi Otsuji, Maxim Ryzhii, Vladimir G. Leiman, Dmitry Svintsov, Vladimir Mitin, and Michael S. Shur
  • Title : Effect of selective doping on characteristics of graphene-van der Waals heterostructure terahertz and infrared detectors
  • Journal : The 38th PIERS: Progress in Electromagnetics Research Symposium Abstracts, p. 1P_10-12, St. Petersburg, Russia, 22-25 May, 2017.
  • No. 959
  • Authors : T. Hosotani, T. Otsuji, and T. Suemitsu
  • Title : Effective electron velocity in InGaAs-HEMTs with slant field plates
  • Journal : CSW: Compound Semiconductor Week Dig., A5.5 (2 pages), Berlin, ‎Brandenburg, Germany, May 14–18, 2017.
  • No. 958
  • Authors : D. Yadav, Y. Tobah, J. Mitsushio, G. Tamamushi, T. Watanabe, A.A. Dubinov, M. Ryzhii, V. Ryzhii, and T. Otsuji
  • Title : Broadband terahertz-light emission by current-injection distributed-feedback dual-gate graphene-channel field-effect transistor
  • Journal : CLEO: Int. Conf. on Lasers and Electro-Optics, AM2B.7, San Jose, CA, USA, May 14-19, 2017.DOI: 10.1364/CLEO_AT.2017.AM2B.7
  • No. 957
  • Authors : K.-S. Kim, G.-H. Park, H. Fukidome, T. Suemitsu, T. Otsuji, W.-J. Cho, and M. Suemitsu
  • Title : Solution-based formation of high-quality gate dielectrics on epitaxial graphene by microwave-assisted annealing
  • Journal : Jpn. J. Appl. Phys., vol. 56, pp. 06GF09-1-5, May 2017.DOI: 10.7567/JJAP.56.06GF09
  • No. 956
  • Authors : 尾辻泰一
  • Title : グラフェンによる電流注入型テラヘルツレーザートランジスターの開発
  • Journal : 日本学術振興会テラヘルツ波科学技術と産業開拓第182委員会 第31回研究会, 大阪大学医学, 工学研究科東京ブランチ, 東京, April 19, 2017. (invited)
  • No. 955
  • Authors : D. Yadav, Y. Tobah, G. Tamamushi, J.i Mitsushio, T. Watanabe, A.A. Dubinov, M. Ryzhii, V. Ryzhii, and T. Otsuji
  • Title : Current-injection terahertz emission in distributed-feedback dual-gate graphene-channel field-effect transistor
  • Journal : OTST'17: Int. Conf. Optical Terahertz Science and Technology Abstract Book, p. 66, London, UK, April 2-7, 2017.
  • No. 954
  • Authors : D. Yadav, J. Mitsushio, Y. Tobah, G. Tamamushi, T. Watanabe, A.A. Dubinov, M. Ryzhii, V. Ryzhii, and T. Otsuji
  • Title : A graphene-channel terahertz light-emitting transistor
  • Journal : Graphene 2017: 7th Edition of the European Conference & Exhibition in Graphene and 2D Materials Dig., p. WS1-1900, Barcelona, Catalonia, Spain, March 28-31, 2017.
  • No. 953
  • Authors : 林 冠廷, 根間 裕史, 翁 銭春, 金 鮮美, 菅原 健太, 尾辻 泰一, 小宮山 進, 梶原 優介
  • Title : グラフェンにおけるショット雑音のナノスケールイメージング
  • Journal : 応用物理学会春季学術講演会, 15p-F202-4, 名古屋, March 15, 2017.
  • No. 952
  • Authors : 菅原 健太, 満塩 純希, Deepika Yadav, Youssef Tabah, 末光 哲也, 吹留 博一, 末光 眞希, 尾辻 泰一
  • Title : デュアルゲートグラフェンチャネルトランジスタ内ラテラルp-i-n接合の線形電流電圧特性
  • Journal : 応用物理学会春季学術講演会, 14p-P4-52, 名古屋, March 14, 2017.
  • No. 951
  • Authors : 細谷 友崇, 尾辻 泰一, 末光 哲也
  • Title : 傾斜型フィールドプレートによるInGaAs系HEMT中の電子速度への影響
  • Journal : 応用物理学会春季学術講演会, 16a-P4-28, 名古屋, March 16, 2017.
  • No. 950
  • Authors : 渡村 遥, 邉見 ふゆみ, Cedric Thomas, Yi-Chun Lai, 肥後 昭男, 寒川 誠二, 尾辻 泰一, 末光 哲也
  • Title : AlGaN/GaN HEMTのゲートリセス構造形成における中性粒子ビームエッチング適用効果
  • Journal : 応用物理学会春季学術講演会, 14p-315-10, 名古屋, March 14, 2017.
  • No. 949
  • Authors : V. Ryzhii, M. Ryzhii, D. Svintsov, L. Leiman, V. Mitin, M.S. Shur, and T. Otsuji
  • Title : Infrared photodetectors based on graphene van der Waals heterostructures
  • Journal : Infrared Phys. Technol., vol.84 , pp. 72-81, 2017.DOI:10.1016/j.infrared.2017.01.016
  • No. 948
  • Authors : M. Ryzhii, T. Otsuji, V. Ryzhii, V. Mitin, M.S. Shur, G. Fedorov, and V. Leiman
  • Title : Dynamic conductivity and two-dimensional plasmons in lateral CNT networks
  • Journal : Int. J. High Speed Electron. Sys., vol. 26, no. 01n02, pp. 1740004-1-10, March 2017.DOI: 10.1142/S0129156417400043
  • No. 947
  • Authors : V. Ryzhii, M. Ryzhii, D. Svintsov, V. Leiman, V. Mitin, M.S. Shur, and T. Otsuji
  • Title : Nonlinear response of infrared photodetectors based on van der Waals heterostructures with graphene layers
  • Journal : Opt. Exp., vol. 25, no. 5, pp. 5536-5549, 2017.DOI: 10.1364/OE.25.005536
  • No. 946
  • Authors : G. Tamamushi, T. Watanabe, J. Mitsushio, A.A. Dubinov, A. Satou, T. Suemitsu M. Ryzhii, V. Ryzhii, and T. Otsuji
  • Title : Current-injection terahertz lasing in a distributed-feedback dual-gate graphene-channel transistor
  • Journal : SPIE OPTO: Conference on "Quantum Sensing and Nano Electronics and Photonics XIV," 10111-77, San Fransisco, CA, USA, Jan. 28 - Feb. 2, 2016. (invited); Proc. SPIE, vol. 10111, pp. 1011126-1-6, 2017.DOI: 10.1117/12.2249983
  • No. 945
  • Authors : Y.M. Meziani, J.A. Delgado Notario, E. Javadi, K. Fobelets, T. Otsuji, E. Diez, and J.E. Velázquez
  • Title : Sub-Terahertz detection and imaging using strained silicon FET
  • Journal : Nanolito2017: Workshop on Nanodevices based on Graphene and 2D Systems Dig., P-05, Salamanca, Spain, 25-26 Jan., 2017.
  • No. 944
  • Authors : 尾辻泰一
  • Title : グラフェンテラヘルツレーザーの創出に関する研究
  • Journal : レーザー学会学術講演会第37回年次大会, B.07aV-1, 富山大学, 7-9 Jan. 2017. (invited)
  • No. 943
  • Authors : A.A. Dubinov, A. Bylinkin, V. Ya Aleshkin, V. Ryzhii, T. Otsuji, and D. Svintsov
  • Title : Ultra-compact injection terahertz laser using the resonant inter-layer radiative transitions in multi-graphene-layer structure
  • Journal : Opt. Exp., vol. 24, iss. 26, pp. 29603-29612, 2016.DOI:10.1364/OE.24.029603
  • No. 942
  • Authors : K. Wakita, E. Sano, M. Ikebe, S. Arnold, T. Otsuji, Y. Takida, and H. Minamide
  • Title : Design and fabrication of terahertz detectors based on 180-nm CMOS process technology
  • Journal : Int. J. High Speed Electron. Sys., vol. 25, no. 03n04, pp. 1640014-1-9, Dec. 2016.DOI: 10.1142/S0129156416400140
  • No. 941
  • Authors : V. Mitin, V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, and M.S. Shur
  • Title : Plasmonic enhancement of terahertz devices efficiency
  • Journal : Int. J. High Speed Electron. Sys., vol. 25, no. 03n04, pp. 1640019-1-7, Dec. 2016.DOI: 10.1142/S012915641640019X
  • No. 940
  • Authors : 宮島卓也, 杉目恒志, 菅原健太, 渡辺隆之, 尾辻泰一, 佐野栄一
  • Title : ナノカーボン材料のテラヘルツ応答特性
  • Journal : 信学会電子デバイス研究会, 仙台, Dec. 19-20, 2016; 信学技報, Vol. 116, no. 375, ED2016-89, pp. 49-54, Dec. 19, 2016.
  • No. 939
  • Authors : 脇田幸典, 池辺将之, Arnold Stevanus, 尾辻泰一, 瀧田佑馬, 南出泰亜, 佐野栄一
  • Title : 180 nmCMOSプロセスを用いたテラヘルツ検出器の設計と評価
  • Journal : 信学会電子デバイス研究会, 仙台, Dec. 19-20, 2016; 信学技報, Vol. 116, no. 375, ED2016-83, pp. 17-22, Dec. 19, 2016.
  • No. 938
  • Authors : 細谷友崇, 糟谷文月, 谷口弘樹, 渡辺隆之, 末光哲也, 尾辻泰一, 瀧田佑馬, 伊藤弘昌, 南出泰亜, 石橋忠夫, 清水誠, 佐藤昭
  • Title : 直列アレイ化とレンズ集積による非対称二重格子ゲート高電子移動度トランジスタのテラヘルツ波受光効率向上
  • Journal : 信学会電子デバイス研究会, 仙台, Dec. 19-20, 2016; 信学技報, Vol. 116, no. 375, ED2016-84, pp. 23-28, Dec. 19, 2016.
  • No. 937
  • Authors : Fuyumi Hemmi, Cedric Thomas, Yi-Chun Lai, Akio Higo, Seiji Samukawa, Taiichi Otsuji, and Tetsuya Suemitsu
  • Title : Neutral beam process in AlGaN/GaN HEMTs: impact on current collapse
  • Journal : ISDRS: Int. Semiconductor Device Research Symposium Proc., pp. FP1-03-1-2, Hyatt Regency Hotel, Bethesda, Maryland, USA, 7-9 Dec. 2016.
  • No. 936
  • Authors : V. Ryzhii, M. Ryzhii, T. Otsuji, D. Svintsov, V. Leiman, V. Mitin, and M.S. Shur
  • Title : Infrared and terahertz detectors based on graphene-van der Waals heterostructures
  • Journal : WINDS16: 2016 International Workshop on Innovative Nanoscale Devices and Systems Abstracts, p. 38, Big Island Hawaii, USA, 4-9 Dec. 2016. (invited)
  • No. 935
  • Authors : G. Tamamushi, T. Watanabe, A. Dubinov, T. Suemitsu, A. Satou, M. Ryzhii, V. Ryzhii, and T. Otsuji
  • Title : Current-injection terahertz lasing in graphene-channel field effect transistors
  • Journal : WINDS16: 2016 International Workshop on Innovative Nanoscale Devices and Systems Abstracts, p. 18, Big Island Hawaii, USA, 4-9 Dec. 2016. (invited)
  • No. 934
  • Authors : T. Otsuji
  • Title : Single-mode terahertz lasing in current-injection graphene-channel transistor
  • Journal : 5th International Conference and Exhibition on Lasers, Optics & Photonics Proc., p. 40, Hilton Atlanta Airport, Atlanta, GA, USA, 28-30 Nov. 2016; J. Lasers, Opt. & Photon., vol. 3, iss. 3, p. 40, 2016. (invited)DOI: 10.4172/2469-410X.C1.007
  • No. 933
  • Authors : 尾辻泰一
  • Title : グラフェンテラヘルツレーザーの創出
  • Journal : シンポジウム「テラヘルツ科学の最先端III」, 三国観光ホテル, 芦原温泉, 福井, Nov. 23-25, 2016. (invited)
  • No. 932
  • Authors : F. Hemmi, C. Thomas, Y.-C. Lai, A. Higo, A. Guo, S. Warnock, J.A. del Alamo, S. Samukawa, T. Otsuji, and T. Suemitsu
  • Title : Neutral beam etching for device isolation in AlGaN/GaN HEMTs
  • Journal : Phys. Stat. Solidi A, vol. 214, no. 3, pp. 1600617-1-5, 2017.DOI: 10.1002/pssa.201600617
  • No. 931
  • Authors : F. Kasuya, H. Taniguchi, T. Watanabe, T. Suemitsu, T. Otsuji, T. Ishibashi, M. Shimizu, Y. Takida, H. Ito, H. Minamide, and A. Satou
  • Title : Array configuration and silicon-lens integration of asymmetric dual-grating-gate HEMT for improvement of light coupling efficiency
  • Journal : RJUSE: 5th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Tech. Dig., pp. 118-121, Sendai, Miyagi, 31 Oct. -4 Nov. 2016.
  • No. 930
  • Authors : V. Mitin, V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, and M.S. Shur
  • Title : Plasmonic enhancement of terahertz devices efficiency
  • Journal : RJUSE: 5th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Tech. Dig., pp. 102-105, Sendai, Miyagi, 31 Oct. -4 Nov. 2016. (invited)
  • No. 929
  • Authors : D. Yadav, S. Boubanga-Tombet, T. Watanabe, V. Ryzhii, and T. Otsuji
  • Title : Double graphene layer van der Waals heterostructures for terahertz emission and detection
  • Journal : RJUSE: 5th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Tech. Dig., pp. 106-109, Sendai, Miyagi, 31 Oct. - 4 Nov. 2016.
  • No. 928
  • Authors : A. Satou, d K. Narahara
  • Title : Numerical characterization of Dyakonov-Shur instability in gated two-dimensional electron systems
  • Journal : RJUSE: 5th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Tech. Dig., pp. 186-189, Sendai, Miyagi, 31 Oct. -4 Nov. 2016.
  • No. 927
  • Authors : A. Satou, K. Sugawara, G. Tamamushi, T. Watanabe, A. Dobroiu, T. Suemitsu, H. Fukidome, M. Suemitsu, V. Ryzhii, K. Iwatsuki, S. Kuwano, J. Kani, J. Terada, and T. Otsuji
  • Title : InP HEMT and graphene FET for optical to sub-THz carrier frequency conversion
  • Journal : RJUSE: 5th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Tech. Dig., pp. 182-185, Sendai, Miyagi, 31 Oct. -4 Nov. 2016.
  • No. 926
  • Authors : K. Wakita, M. Ikebe, S. Arnold, T. Otsuji, Y. Takida, H. Minamide, and E. Sano
  • Title : Design and fabrication of terahertz detectors based on 180-nm CMOS process technology
  • Journal : RJUSE: 5th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Tech. Dig., pp. 30-33, Sendai, Miyagi, 31 Oct. -4 Nov. 2016.
  • No. 925
  • Authors : T. Komatsu, T. Otsuji, V. Ryzhii, D. Svintsov, V. Vyurkov, and A. Satou
  • Title : A numerical model for finite-temperature self-energy in doped graphene with electron-electron interaction
  • Journal : Graphene Canada: Graphene & 2D Materials International Conference and Exhibition Dig., p. P1, Montreal, Quebec, Canada, 18-20 Oct. 2016.
  • No. 924
  • Title : Shuo Tang and Daryosh Saeedkia eds., Advances in Imaging and Sensing [T. Otsuji and V. Ryzhii, Chapt. 1: "Theory and Experiments on THz Devices on Graphene, " pp. 3-35.], CRC Press, FL, USA, 283 pages, 18 Oct. 2016. ISBN: 9781498714754
  • No. 923
  • Authors : D. Yadav, S. Boubanga-Tombet, T. Watanabe, S. Arnold, V. Ryzhii, and T. Otsuji
  • Title : Terahertz wave generation and detection in double-graphene layered van der Waals heterostructures
  • Journal : 2D Mater., vol. 3, pp. 045009-1-8, Oct. 2016.DOI: 10.1088/2053-1583/3/4/045009
  • No. 922
  • Authors : T. Hosotani, T. Otsuji, and T. Suemitsu
  • Title : Achievement of balanced high frequency and high breakdown by InGaAs-based high-electron-mobility transistors with slant field plates
  • Journal : Appl Phys. Exp., vol. 9, pp. 114101-1-3, Oct. 2016.DOI: 10.7567/APEX.9.114101
  • No. 921
  • Authors : I. Semenikhin, V. Vyurkov, A. bugayev, R. Khabibullin, D. Ponomarev, A. Yachmenev, P. Maltsev, M. Ryzhii, T. Otsuji, and V. Ryzhii
  • Title : Terahertz bolometer based on Sn nanothreads in GaAs
  • Journal : ICMNE: Int. Conf. on Micro- and Nano-Electronics Dig., p. O3-08, The "Ershovo" resort, Zvenigorod, Moscow Region, Russia, 3-7 Oct. 2016.
  • No. 920
  • Authors : T. Watanabe, G. Tamamushi, A.A. Dubinov, A. Satou, M. Ryzhii, V. Ryzhii, and T. Otsuji
  • Title : Current injection terahertz lasing in graphene-channel field-effect transistors under population inversion
  • Journal : ICMNE: Int. Conf. on Micro- and Nano-Electronics Dig., p. L2-01, The "Ershovo" resort, Zvenigorod, Moscow Region, Russia, 3-7 Oct. 2016. (invited, keynote)
  • No. 919
  • Authors : S. Boubanga Tombet, D. Yadav, T. Watanabe, V. Ryzhii, and T. Otsuji
  • Title : Emission and detection of terahertz radiation in graphene/hBN heterostructures
  • Journal : ICMNE: Int. Conf. on Micro- and Nano-Electronics Dig., p. L2-02, The "Ershovo" resort, Zvenigorod, Moscow Region, Russia, 3-7 Oct. 2016. (invited)
  • No. 918
  • Authors : V. Ryzhii, M. Ryzhii, V. Leiman, D. Svintsov, V. Mitin, M.S. Shur, and T. Otsuji
  • Title : Detectors of infrared and terahertz radiation based on graphene-van der Waals heterostructures
  • Journal : ICMNE: Int. Conf. on Micro- and Nano-Electronics Dig., p. L2-03, The "Ershovo" resort, Zvenigorod, Moscow Region, Russia, 3-7 Oct. 2016. (invited)
  • No. 917
  • Authors : T. Otsuji
  • Title : Graphene-based 2D heterostructures for current-injection terahertz lasing
  • Journal : TERA NANO VII: the 7th Int. Symp. on Terahertz Nanoscience Dig., pp. S8-2-1-2, IGESA Center, Porquerolles, France, 2-8 Oct. 2016. (invited)
  • No. 916
  • Authors : I. Semenikhin, V. Vyurkov, A. Bugaev, R. Khabibullin, D. Ponomarev, A. Yachmenev, P. Maltsev, M. Ryzhii, T. Otsuji, and V. Ryzhii
  • Title : Sn nanothreads in GaAs: experiment and simulation
  • Journal : Proc. SPIE, vol. 10224, pp. 102240R-1-10, Dec. 2016.; International Conference on Micro- and Nano-Electronics 2016, 102240R, Zvenigorod, Russian Federation, October 3, 2016.DOI:10.1117/12.2267241
  • No. 915
  • Authors : 尾辻
  • Title : 物質の五感を操り, 機能を紡ぐ;現代物理のキーワード:テラヘルツ波
  • Journal : 日本物理学会誌, vol. 71, no. 10, pp. 666-667, Oct. 2016.
  • No. 914
  • Authors : G. Tamamushi, T. Watanabe, A. Dubinov, H. Wako, A. Satou, T. Suemitsu, M. Ryzhii, V. Ryzhii, and T. Otsuji
  • Title : 5.2-THz single-mode lasing in current-injection distributed-feedback dual-gate graphene-channel field-effect transistor
  • Journal : IRMMW-THz: 41st International Conference on Infrared, Millimeter and Terahertz Waves Proc., pp. F2C.5-1-2, Bella Center, Copenhagen, Denmark, 25-30 Sept. 2016.DOI: 10.1109/IRMMW-THz.2016.7758354
  • No. 913
  • Authors : F. Kasuya, H. Taniguchi, T. Watanabe, T. Suemitsu, T. Otsuji, T. Ishibashi, M. Shimizu, Y. Takida, H. Ito, H. Minamide, and A. Satou
  • Title : Array configuration and silicon-lens integration of asymmetric dual-grating-gate plasmonic THz detectors
  • Journal : IRMMW-THz: 41st International Conference on Infrared, Millimeter and Terahertz Waves Proc., pp. T4C.6-1-2, Bella Center, Copenhagen, Denmark, 25-30 Sept. 2016.DOI: 10.1109/IRMMW-THz.2016.7758755
  • No. 912
  • Authors : M. Ryzhii, V. Ryzhii, A. Satou, T. Otsuji, V. Mitin, and M.S. Shur
  • Title : Models for plasmonic THz detectors based on graphene split-gate FETs with lateral p-n junctions
  • Journal : SISPAD: 2016 International Conference on Simulation of Semiconductor Processes and Devices Proc., pp. 361-364 (O19.2), Le Meridien Grand Hotel NurembergNuremberg; Germany; 6-8 Sept. 2016.DOI: 10.1109/SISPAD.2016.7605221
  • No. 911
  • Authors : 脇田幸典, 佐野栄一, 池辺将之, Stevenus Arnold, 尾辻泰一, 瀧田佑馬, 南出泰
  • Title : CMOSテラヘルツ検出器の設計と評価
  • Journal : 電子情報通信学会ソサエティ大会, C-10-9, 北海道大学, 札幌市, 20-23 Sept. 2016.
  • No. 910
  • Authors : 細谷友崇, 尾辻泰一, 末光哲也
  • Title : 傾斜型フィールドプレートを有する InGaAs HEMT の寄生容量抽出
  • Journal : 電子情報通信学会ソサエティ大会, C-10-6, 北海道大学, 札幌市, 20-23 Sept. 2016.
  • No. 909
  • Authors : 邉見 ふゆみ, Thomas Cedric, Lai Yi-Chun, 肥後 昭男, Guo Alex, Warnock Shireen, del Alamo Jesus A., 寒川 誠二, 尾辻 泰一, 末光 哲也
  • Title : AlGaN/GaN HEMT における中性粒子ビームエッチングの素子間リーク電流および素子間耐圧への影響
  • Journal : 第77回応用物理学会秋季学術講演会, 16p-B1-8, 朱雀メッセ, 新潟市, 13-16 Sept. 2016.
  • No. 908
  • Authors : D. Svintsov, Zh. Devizorova, T. Otsuji, and V. Ryzhii
  • Title : Plasmons in tunnel-coupled graphene layers: Backward waves with quantum cascade gain
  • Journal : Phys. Rev. B, vol. 94, pp. 115301-1-12, 2016.DOI: 10.1103/PhysRevB.94.115301
  • No. 907
  • Authors : A. Satou, and K. Narahara
  • Title : Numerical characterization of Dyakonov-Shur instability in gated two-dimensional electron systems
  • Journal : Int. j. High-Speed Electron. and Sys., vol. 25, no. 3-4, pp. 1640024-1-10, Sept. 2016.DOI: 10.1142/s0129156416400243
  • No. 906
  • Authors : T. Otsuji, S.A. Boubanga Tombet, D. Yadav, and V. Ryzhii
  • Title : Graphene-based van der Waals heterostructures for terahertz device applications
  • Journal : IEEE NANO 2016: the 2016 IEEE 16th International Conference on Nanotechnology Dig., p. Tu3-2, Sendai International Conference Center, Sendai, Japan, 22-25 Aug. 2016. (invited)
  • No. 905
  • Authors : F. Kasuya, H. Taniguchi, T. Watanabe, T. Suemitsu, T. Otsuji, Y. Takida, H. Ito, H. Minamide, T. Ishibashi, M. Shimizu, and A. Sato
  • Title : Nanostructured asymmetric dual-grating-gate plasmonic THz detectors: enhancement of external coupling efficiency by array configuration and silicon-lens integration
  • Journal : IEEE NANO 2016: the 2016 IEEE 16th International Conference on Nanotechnology Proc., pp. 116-118, Sendai International Conference Center, Sendai, Japan, 23 Aug. 2016.DOI: 10.1109/NANO.2016.7751467
  • No. 904
  • Authors : S. Boubanga Tombet, D. Yadav, G. Tamamushi, T. Watanabe, A.A. Dubinov, A. Satou, T. Suemitsu, M. Ryzhii, V. Ryzhii, and T. Otsuji
  • Title : Terahertz emission and detection in graphene-based heterostructures
  • Journal : Global Grapheen Forum 2016 Proc., pp. W-II-I2-1-2, Mariella, Viking Line, Stockholm, Sweden, 23-26 Aug. 2016. (Invited)
  • No. 903
  • Authors : T. Hosotani, T. Otsuji, and T. Suemitsu
  • Title : Cross sectional observation of slant field plates integrated to InAlAs/InGaAs HEMTs
  • Journal : IEEE 2016 Lester Eastman Conference on High Performance Devices Dig., pp. P4-1-2, Lehigh Univ., Bethlehem, PA, USA, 2-4 Aug. 2016.
  • No. 902
  • Authors : 脇田幸典, 佐野栄一, 池辺将之, Arnold Stevanus, 尾辻泰一, 瀧田佑馬, 南出泰亜
  • Title : CMOSテラヘルツイメージング回路の設計と評価
  • Journal : 映像情報メディア学会研究会, 映情学技報, vol. 40, no. 24, IST2016-38, pp. 19-24, 1 Aug. 2016.
  • No. 901
  • Authors : T. Otsuji, D. Svintsov, A. Dubiniv, D. Yadav, S. Boubanga Tombet, T. Watanabe, A. Ssatou, V. Ryzhii, V. Mitin, and M.S. Shur
  • Title : Graphene-based van der Waals heterostuctrue plasmonic metamaterials for terahertrz device applications
  • Journal : META 2016: 7th International Conference on Metamaterials, Photonic Crystals and Plasmonics Proc., pp. 181-182, Torremolinos Congress Center, Malaga, Spain, 25-28 July 2016. (invited) ISSN: 2429-1390
  • No. 900
  • Authors : Victor Ryzhii, Taiichi Otsuji, Maxim Ryzhii, Vladimir Georgievich Leiman, Georgy Fedorov, Gregory Goltsman, Igor Gayduchenko, Nadezhda Titova, Dominique Coquillat, Dmitry But, Wojciech Knap, Vladimir Mitin, Michael S. Shur
  • Title : Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection
  • Journal : J. Appl. Phys., Vol. 120, pp. 044501-1-13, July 2016.DOI: 10.1063/1.4959215
  • No. 899
  • Authors : A. Satou, G. Tamamushi, K. Sugawara, J. Mitsushio, V. Ryzhii, and T. Otsuji
  • Title : A fitting model for asymmetric I-V characteristics of graphene FETs for extraction of intrinsic moblities
  • Journal : IEEE Trans. Electron Dev., Vol. 63, Iss. 8, pp. 3300-3306, July 2016.DOI: 10.1109/TED.2016.2578325
  • No. 898
  • Authors : 脇田幸典, 佐野栄一, 池辺将之, Stevenus Arnold, 尾辻泰一, 瀧田佑馬, 南出泰
  • Title : CMOSテラヘルツ検出器の設計と評価
  • Journal : 電子情報通信学会テラヘルツ応用システム時限研究専門委員会平成28年度第1回研究会, NiCT小金井本部, 東京, 15 July 2016.
  • No. 897
  • Authors : V. Ryzhii, M. Ryzhii, M.S. Shur, V. Mitin, A. Satou, and T. Otsuji
  • Title : Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p-n junctions
  • Journal : J. Phys. D: Appl. Phys., vol. 49, pp. 315103-1-14, July 2016.DOI: 10.1088/0022-3727/49/31/315103
  • No. 896
  • Authors : J. Mitsushio, G. Tamamushi, K. Sugawara, A. Satou, T. Suemitsu, H. Fukidome, M. Suemitsu, and T. Otsuji
  • Title : A fitting model for extraction of intrinsic transistor parameters in graphene FETs
  • Journal : AWAD 2016: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices Proc., pp. A7-5-1-5, Hakodake, Hokkaido, Japan, 4-6 July 2016.
  • No. 895
  • Authors : A. Satou, K. Sugawara, G. Tamamushi, T. Watanabe, A. Dobroiu, T. Suemitsu, H. Fukidome, M. Suemitsu, V. Ryzhii, K. Iwatsuki, S. Kuwano, J. Kani, J. Terada, and T. Otsuji
  • Title : Sub-THz Photonic Double-Mixing Conversion Using Transistors
  • Journal : AWAD 2016: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices Proc., pp. A5-5-1-6, Hakodake, Hokkaido, Japan, 4-6 July 2016.
  • No. 894
  • Authors : T. Watanabe, H. Wako, A. Satou, A.A. Dubinov, K. Kawahara, H. Ago, V. Ryzhii, and T. Otsuji
  • Title : Observation of spontaneous terahertz emission from optically pumped monolayer intrinsic graphene
  • Journal : CSW: Compound Semiconductor Week 2016, a joint venue for the 43rd International Symposium on Compound Semiconductors (ISCS) and the 28th International Conference on Indium Phosphide and Related Materials (IPRM) Proc., pp. ThC2-2-1-2, Toyama International Conference Center, Toyama, Japan, 26-30 June 2016.DOI: 10.1109/ICIPRM.2016.7528745
  • No. 893
  • Authors : F. Hemmi, C. Thomas, Y.-C. Lai, A. Higo, A. guo, S. Warnock, J.A. del Alamo, S. Samukawa, T. Otsuji, and T. Suemitsu
  • Title : The effect of neutral beam etching on device isolation in AlGaN/GaN HEMTs
  • Journal : CSW: Compound Semiconductor Week 2016, a joint venue for the 43rd International Symposium on Compound Semiconductors (ISCS) and the 28th International Conference on Indium Phosphide and Related Materials (IPRM) Proc., pp. WeB2-4-1-2, Toyama International Conference Center, Toyama, Japan, 26-30 June 2016.DOI: 10.1109/ICIPRM.2016.7528843
  • No. 892
  • Authors : T. Hosotani, T. Otsuji, and T. Suemitsu
  • Title : Gate delay analysis in two-step recess gate InGaAs-HEMTs with slant field plates
  • Journal : CSW: Compound Semiconductor Week 2016; a joint venue for the 43rd International Symposium on Compound Semiconductors (ISCS) and the 28th International Conference on Indium Phosphide and Related Materials (IPRM) Proc., pp. TuD4-5-1-2, Toyama International Conference Center, Toyama, Japan, 26-30 June 2016.DOI: 10.1109/ICIPRM.2016.7528833
  • No. 891
  • Authors : Akira Satou, Gen Tamamushi, Kenta Sugawara, Junki Mitsushio, Victor Ryzhii, and Taiichi Otsuji
  • Title : Extraction of intrinsic and extrinsic parameters of graphene field-effect transistor from Its asymmetric I-V characteristic
  • Journal : CSW: Compound Semiconductor Week 2016; a joint venue for the 43rd International Symposium on Compound Semiconductors (ISCS) and the 28th International Conference on Indium Phosphide and Related Materials (IPRM) Proc., pp. MoP-ISCS-117-1-2, Toyama International Conference Center, Toyama, Japan, 26-30 June 2016.DOI: 10.1109/ICIPRM.2016.7528701
  • No. 890
  • Authors : G. Tamamushi, T. Watanabe, A. Dubinov, J. Mitsushio, H. Wako, A. Satou, T. Suemitsu, H. Fukidome, M. Suemitsu, M. Ryzhii, V. Ryzhii, and T. Otsuji
  • Title : Single-mode terahertz emission from current-injection graphene-channel transistor under population inversion
  • Journal : DRC: 2016 74th Annual Device Research Conference Digest, pp. 225-226, Univ. Delaware, DL, USA, 21 June 2016.DOI: 10.1109/DRC.2016.7548491
  • No. 889
  • Authors : V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, V. Mitin, and M.S. Shur
  • Title : Plasmonic terahertz detector based on graphene split-gate FET with nanoconstrictions in lateral p-n junction depletion region
  • Journal : QSIP 2016: Quantum Structured Photodetector International Conference Proc., pp. Th1130-1-2, Ter Aviv, Israel, 12-17 June 2016.
  • No. 888
  • Authors : Y. Koseki, V. Ryzhii, T. Otsuji, V. V. Popov, and A. Satou
  • Title : Giant plasmon instability in dual-grating-gate graphene field-effect transistor
  • Journal : Phys. Rev. B, vol. 93, no. 24, pp. 245408-1-5, Jun. 2016.DOI: 10.1103/PhysRevB.93.245408
  • No. 887
  • Authors : T. Otsuji
  • Title : Emission and detection of terahertz radiation in double-graphene-layered van der Waals heterostuctrues via photon-assisted plasmonic resonant tunneling
  • Journal : CIMTEC: International Conferences on Modern Materials & Technologies; General physical and chemical properties of Symposium F "Graphene and Other Emerging 2D-layered Nanomaterials: Synthesis, Properties and Potential Applications" Dig., p. F-1:IL07, Centro Congressi Hotel Quattrotorri at Best Western, Perugia, Italy, 5-9 June 2016. (invited)
  • No. 886
  • Authors : G. Tamamushi, T. Watanabe, A. Dubinov, H. Wako, A. Satou, T. Suemitsu, M. Ryzhii, V. Ryzhii, and T. Otsuji
  • Title : Current-injection terahertz lasing in distributed-feedback dual-gate graphene-channel field-effect transistor
  • Journal : CLEO: the 36th Conference on Lasers and Electro-Optics, SM3L.7, San Jose Convention Center, San Jose, CA, USA, 6 June 2016.DOI: 10.1364/CLEO_SI.2016.SM3L.7
  • No. 885
  • Authors : G.-H. Park, K.-S. Kim, H. Fukidome, T. Suemitsu, T. Otsuji, W.-J. Cho, and M. Suemitsu
  • Title : High-performance self-aligned graphene transistors fabricated using contamination- and defect-free process
  • Journal : Jpn. J. Appl. Phys., vol. 55, no. 6S1, pp. 06GF11-1-4, May 2016.DOI: 10.7567/JJAP.55.06GF11
  • No. 884
  • Authors : Park G.-H., Kim K.-S., Fukidome H., Suemitsu T., Otsuji T., Cho W.-J., Suemitsu M.
  • Title : Solution-processed Al2O3 gate dielectrics for graphene field-effect transistors
  • Journal : Jpn. J. Appl. Phys., vol. 55, pp. 091502-1-5, 2016.DOI: 10.7567/JJAP.55.0915
  • No. 883
  • Authors : T. Otsuji
  • Title : Emission and detection of terahertz radiation using double-graphene-layered van der Waals heterostuctrues
  • Journal : CMOS-ETR: Int. Symp. on Emerging Technologies Research in Communications, Microsystems, Optoelectronics, and Sensors Proc., pp. C2-1-2, Hotel Bonaventure Montréal, Montreal, Canada, 25-27 May 2016. (invited)
  • No. 882
  • Authors : T. Otsuji, S.A. Boubanga-Tombet, T.Watanabe, D. Yadav, A. Satou, A.A. Dubinov, D. Svintsov, M. Ryzhii, V. Mitin, M.S. Shur, and V. Ryzhii
  • Title : Emission and detection of terahertz radiation in graphene-based van der Waals heterostuctrues
  • Journal : EMN Meeting on Terahertz Proc., p. C38, Donostia, San Sebastian, Spain, 14-18, May 2016. (invited)
  • No. 881
  • Authors : Y.M. Meziani, J.A. Delgado Notario, E. Javadi, K. Fobelets, T. Otsuji, E. Diez, and J.E. Velázquez
  • Title : Terahertz detection using strained silicon MODFET and application for imaging
  • Journal : EMN Meeting on Terahertz Proc., p. C12, Donostia, San Sebastian, Spain, 14-18, May 2016. (invited)
  • No. 880
  • Authors : A. Satou, T. Watanabe, T. Suemitsu, V. Ryzhii, D. Fateev, V. V. Popov, and T. Otsuji
  • Title : Plasmonic THz devices based on InP HEMTs and Graphene FETs
  • Journal : EMN Meeting on Terahertz Proc., p. C18, Donostia, San Sebastian, Spain, 14-18, May 2016. (invited)
  • No. 879
  • Authors : K. Wakita, E. Sano, M. Ikebe, S. Arnold, T. Otsuji, Y. Takida, and H. Minamide
  • Title : Design and fabrication of a terahertz imaging array in 180-nm CMOS process technology
  • Journal : MIKON 2016 - 21st International Conference on Microwave, Radar and Wireless Communications Proc., pp. M4.3-1-4, QUBUS HOTEL Krakow, Poland, May 9-11, 2016.DOI: 0.1109/MIKON.2016.7492053
  • No. 878
  • Authors : P. Faltermeier, J. Unverzagt, W. Probst, P. Olbrich, L. Schell, T. Watanabe, S.A. Boubanga Tombet, T. Otsuji, and S.D. Ganichev
  • Title : Terahertz ratchet- and magnetic ratchet-effects in InAlAs/InGaAs/InAlAs and (Cd, Mn)Te/(Cd, Mg)Te heterostructures with a lateral periodic potential
  • Journal : 5th EOS Topical Meeting on Terahertz Science & Technology Proc., pp. 36-1-2, Pecs, Hungary, 8-12 May 2016.
  • No. 877
  • Authors : A. Satou, Y. Koseki, T. Watanabe, V.V. Popov, V. Ryzhii, and T. Otsuji
  • Title : Cooperative promotion of plasma instabilities for emission of terahertz radiation in an asymmetric dual-grating gate graphene-channel FET
  • Journal : SPIE DCS: Int. Conf. on Defense + Commercial Sensing, Conference 9856 on Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry and Defense, Paper No. 9856-11, Baltimore Convention Center, Baltimore, MD, USA, April 17, 2016.; Prof. SPIE, vol. 9856, pp. 98560F-1-7, 2016.DOI: 10.1117/12.2227438
  • No. 876
  • Authors : T. Otsuji, A. Dubinov, V.Y. Aleshkin, D. Svintsov, M. Ryzhii, S. Boubanga-Tombet, D. Yadav, A. Satou, V. Mitin, M.S. Shur, and V. Ryzhii
  • Title : Graphene-based van der Waals heterostructures for emission and detection of terahertz radiation
  • Journal : SPIE DCS: Int. Conf. on Defense + Commercial Sensing, Conference 9856 on Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry and Defense, Paper No. 9856-5, Baltimore Convention Center, Baltimore, MD, USA, April 17, 2016. (Invited); Proc. SPIE, vol. 9856, pp. 985603-1-8, 2016.DOI: 10.1117/12.2225257
  • No. 875
  • Authors : K. Sugawara, T. Kawasaki, G. Tamamushi, H. Mastura, A. Dobroiu, T. Yoshida, T. Suemitsu, H. Fukidome, M. Suemitsu, V. Ryzhii, K. Iwatsuki, S. Kuwano, J.-I. Kani, J. Terada, and T. Otsuji
  • Title : Photonic frequency double-mixing conversion over the 120-GHz band using InP- and graphene-based transistors
  • Journal : IEEE J. Lightwave Technol., Vol. 34, Iss. 8, pp. 2011-2019, 2016. (Top Scored)DOI: 10.1109/JLT.2015.2505146
  • No. 874
  • Authors : 邉見, Thomas, Lai, 肥後, Guo, Warnock, del Alamo, 寒川, 尾辻, 末光
  • Title : 中性粒子ビームエッチングによるAlGaN/GaN HEMTの素子間リーク電流抑制
  • Journal : , 第63回応用物理学会春季学術講演会 , 22a-W541-9, 東工大 大岡山キャンパス, Mar. 19-22, 2016.
  • No. 873
  • Authors : 満塩 純希, 玉虫 元, 菅原 健太, 佐藤 昭, 吹留 博一, 末光 眞希, 尾辻 泰一
  • Title : グラフェンFETにおける真性トランジスタパラメータ抽出用モデルの評価
  • Journal : 第63回応用物理学会春季学術講演会, 21p-S11-5, 東京, Mar. 21, 2016.
  • No. 872
  • Authors : 谷口弘樹, 糟谷文月, 渡辺隆之, 末光哲也, 尾辻泰一, 瀧田佑馬, 伊藤弘昌, 南出泰亜, 石橋忠夫, 清水誠, 佐 昭
  • Title : 非対称二重格子ゲート, プラズモニック THz 波検出器のアレイ化と超半球シリコンレンズ集積による受光効率向上
  • Journal : 第63回応用物理学会春季学術講演会, 21a-P6-17, 東京, Mar. 21, 2016.
  • No. 871
  • Authors : 根間裕史, 林冠廷, 金鮮美, 菅原健太, 尾辻泰一, 小宮山進, 梶原優介
  • Title : 流によりグラフェン表面に誘起される電磁エバネッセ ント波ーパッシブ, テラヘルツ近接場顕微鏡による可視 化ー
  • Journal : 第63回応用物理学会春季学術講演会, 19a-S622-2, 東京, Mar. 19, 2016.
  • No. 870
  • Authors : 小松竜大, 尾辻泰一, Ryzhii Victor, Svintsov Dmitry, Vyurkov Vladimir, 佐藤昭
  • Title : 有限温度でのグラフェン内電子間相互作用によるエネルギー分散補正の計算モデル構築
  • Journal : 第63回応用物理学会春季学術講演会, 20a-P4-40, 東京, Mar. 20, 2016.
  • No. 869
  • Authors : 細谷友崇, 尾辻泰一, 末光哲也
  • Title : Ar プラズマエッチングを用いた二段階ゲートリセス構造 を持つ InGaAs 系 HEMT の試作とその特性
  • Journal : 第63回応用物理学会春季学術講演会, 20p-P9-16, 東京, Mar. 20, 2016.
  • No. 868
  • Authors : T. Itatsu, E. Sano, Y. Yabe, V. Ryzhii, and T. Otsuji
  • Title : Enhanced terahertz emission from monolayer graphene with metal meesh structure
  • Journal : Materials Today: Proceedings, vol. 3, pp. S221-S226, March 2016.DOI: 10.1016/j.matpr.2016.02.037
  • No. 867
  • Authors : A. Satou, T. Watanabe, T. Suemitsu, V. Ryzhii, D. Fateev, V. V. Popov, and T. Otsuji
  • Title : THz devices based on plasmons in 2D electron systems
  • Journal : XX International Symposium on Nanophysics & Nanoelectronics, Nizhny Novgorod, Russia, 14-18, Mar. 2016. (invited)
  • No. 866
  • Authors : T. Itatsu, E. Sano, Y. Yabe, V. Ryzhii, T. Otsuji
  • Title : Enhanced terahertz emission from monolayer graphene with metal mesh structure
  • Journal : International Conference on Diamond and Carbon Materials, P2.108, Meliá Castilla, Madrid, Spain, 7-11 Sept. 2014; Materials Today: Proceedings, Vol. 3, Suppl. 2, pp. S221-S226, March 2016.DOI: 10.1016/j.matpr.2016.02.037
  • No. 865
  • Authors : Taiichi Otsuji, Kenta Sugawara, Gen Tamamushi, Adrian Dobroiu, Tetsuya Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Shigeru Kuwano, Jun-ichi Kani, Jun Terada
  • Title : Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems
  • Journal : SPIE Photonics West, OPTO 2016, Conference 9772 on Broadband Access Communication Technologies X, Paper No. 9772-3, San Francisco, CA, USA, Feb. 16, 2016. (invited); Proc. SPIE, vol. 9772, pp. 977204-1-9, 2016.DOI: 10.1117/12.2209211
  • No. 864
  • Authors : 尾辻
  • Title : 二次元原子薄膜ヘテロ接合の複合量子物性とそのテラヘルツ帯光源デバイスへの応用
  • Journal : JEITA電子材料, デバイス技術専門委員会量子現象利用デバイス分科会講演会, 大手センタービル, 東京, Jan. 28, 2016. (invited)
  • No. 863
  • Authors : 玉虫 元, 菅原 健太, 佐藤 昭, 田島 圭一郎, 吹留 博一, 末光 眞希, 尾辻 泰一
  • Title : グラフェンチャネルFETにおける真性パラメータの抽出
  • Journal : 信学会電子デバイス研究会, 仙台, Dec. 21-22, 2015; 信学技報, Vol. 115, no. 387, ED2015-95, pp. 25-30, Dec. 21, 2015.
  • No. 862
  • Authors : 宮島 卓也, 板津 太郎, 杉目 恒志, ステファヌス アルノード, 尾辻 泰, 佐野 栄一
  • Title : 光照射カーボンナノチューブフォレストのテラヘルツ応答
  • Journal : 信学会電子デバイス研究会, 仙台, Dec. 21-22, 2015; 信学技報, Vol. 115, no. 387, ED2015-104, pp. 77-82, Dec. 22, 2015.
  • No. 861
  • Authors : Deepika Yadav, Stephane Boubanga Tombet, Stevanus Arnold, Takayuki Watanabe, Victor Ryzhii, and Taiichi Otsuji
  • Title : Terahertz emission and detection from double graphene layer heterostructures
  • Journal : 信学会電子デバイス研究会, 仙台, Dec. 21-22, 2015; 信学技報, Vol. 115, no. 387, ED2015-103, pp. 71-76, Dec. 21, 2015.
  • No. 860
  • Authors : Victor Ryzhii, Taiichi Otsuji, Maxim Ryzhii, Vladimir Mitin, and Michael S. Shur
  • Title : Optically and electrically pumped graphene bilayer lasers: Dramatic enhancement of terahertz gain by remote doping
  • Journal : ISANN 2015: International Symposium on Advanced Nanodevices and Nanotechnology Dig., Graphene-II.1, Waikoloa, Hawaii, Nov. 29-Dec. 4, 2015.
  • No. 859
  • Authors : T. Otsuji
  • Title : Graphene-based van der Waals heterostructures for terahertz device applications
  • Journal : OPTIC 2015: the International Conference on Optics & Photonics Taiwan Proc., D6.S1-1, Taipei, Taiwan, 4-5 Dec. 2015. (invited)
  • No. 858
  • Authors : T. Otsuji, S.A. Boubanga Tombet, and V. Ryzhii
  • Title : Double-graphene-layer van der Waals heterostructures for terahertz device applications
  • Journal : MRS Fall Meeting, Symposium Q: Nano Carbon Materials -1D to 3D, Q5.06, Boston, MA, USA, 1 Dec. 2015. (invited)
  • No. 857
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V. Mitin, and M. S. Shur
  • Title : Resonant plasmonic terahertz detection in vertical graphene-base hot-electron transistors
  • Journal : J. Appl. Phys., vol. 118, pp. 204501-1-8, Nov. 2015.DOI: 10.1063/1.4936265
  • No. 856
  • Authors : V. Ryzhii, M. Ryzhii, V. Mitin, M.S. Shur, and T. Otsuji
  • Title : Negative terahertz conductivity in remotely doped graphene bilayer heterostructures
  • Journal : J. Appl. Phys., vol. 118, pp. 183105-1-8, Nov. 2015.DOI: 10.1063/1.4934856
  • No. 855
  • Authors : O.V. Polischuk, V.V. Popov, and T. Otsuji
  • Title : Superradiant amplification of terahertz radiation by plasmons in inverted graphene with a planar distributed Bragg resonator
  • Journal : Semicond., vol. 49, iss. 11, pp. 1468-1472, Nov. 2015.DOI: 10.1134/S1063782615110172
  • No. 854
  • Authors : T. Otsuji
  • Title : Trends in the Research of Modern Terahertz Detectors: Plasmon Detectors
  • Journal : IEEE Trans. Thrz. Sci. Technol., Vol. 5, No. 6, pp. 1110-1120, Nov. 2015.DOI: 10.1109/TTHZ.2015.2487222
  • No. 853
  • Authors : T. Suemitsu, K. Kobayashi, S. Hatakeyama, N. Yasukawa, T. Yoshida, T. Otsuji, D. Piedra, and T. Palacios
  • Title : A new process approach for slant field plates in GaN-based high-electron-mobility transistors
  • Journal : Jpn. J. Appl. Phys., Vol. 55, pp. 01AD02-1-6, Nov. 2015.DOI: 10.7567/JJAP.55.01AD02
  • No. 852
  • Authors : M. Ryzhii, V. Ryzhii, T. Otsuji, and M.S. Shur
  • Title : Vertical hot-electron graphene-base transistors as resonant plasmonic terahertz detectors
  • Journal : COMCAS: the 5th International IEEE Conference on Microwaves, Communications, Antennas and Electronic Systems, TU3C-4 (#1104), pp. 1-3, Tel Aviv, Israel, 2-4 Nov. 2015.DOI: 10.1109/COMCAS.2015.7360418
  • No. 851
  • Authors : T. Otsuji
  • Title : Graphene-based 2-dimensional materials for terahertz device applications
  • Journal : Optics - 2015: IX International Conference of Young Scientists and Specialists on Optics, St. Petersburg, Russia, 12-16 Oct. 2015. (invited distinguished lecture)
  • No. 850
  • Authors : K. Sugawara, T. Kawasaki, G. Tamamushi, M. B. Hussin, A. Dobroiu, T. Yoshida, T. Suemitsu, H. Fukidome, M. Suemitsu, V. Ryzhii, K. Iwatsuki, S. Kuwano, J. Kani, J. Terada, and T. Otsuji
  • Title : Sub-THz photonic frequency conversion using graphene and InP-based transistors for future fully coherent access network
  • Journal : ECOC 2015: the 41st Enropean Conference on Optical Communication, Mo3.4.2, pp. 1-3, Feria Valencia Convention and Exhibition Centre, Valencia, Spain, 27 Sept. - 1 Oct. 2015.DOI: 10.1109/ECOC.2015.7341625
  • No. 849
  • Authors : P. Faltermeier, P. Olbrich, W. Probst, L. Schell, T. Watanabe, S.A. Boubanga Tombet, T. Otsuji, and S.D. Ganichev
  • Title : Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors
  • Journal : J. Appl. Phys., Vol. 118, Iss. 8, pp. 084301-1-6, 2015.DOI: 10.1063/1.4928969
  • No. 848
  • Authors : D. Yadav, A. Stevanus, S. Boubanga Tombet, T. Watanabe, V. Ryzhii, and T. Otsuji
  • Title : Resonant emission and detection of terahertz radiation from double graphene layer heterostructures
  • Journal : JSAP-OSA Joint Symposia 2015 in JSAP Fall Meeting, E 15a-2D-7, Nagoya, Japan, 15 Sep. 2015.
  • No. 847
  • Authors : 玉虫 元, 菅原 健太, 吹留 博一, 末光 眞 希, 尾辻 泰一
  • Title : グラフェンチャネル FET における真性キャリア移動度の抽出
  • Journal : 第76回応用物理学会秋季学術講演会, 15a-2T-2, 名古屋, 13-16 Sept. 2015.
  • No. 846
  • Authors : A. Stevanus, S. Boubanga Tombet, D. Yadav, T. Watanabe, V. Ryzhii, and T. Otsuji
  • Title : Terahertz Detection in Double-Graphene-Layer Heterostructure
  • Journal : JSAP Fall Meetin, 16p-2J-12, Nagoya, Japan, 14 Sept. 2015.
  • No. 845
  • Authors : 糟谷文月, 川﨑鉄哉, 渡辺隆之, Boubanga-Tombet Stephane, 末光哲也, 尾辻泰一(東北大), 瀧田佑馬, 伊藤弘昌, 南出泰亜(理研), 佐藤 昭(東北大)
  • Title : 非対称性指数向上とアレイ化による非対称二重格子ゲートHEMTの検出感度向上
  • Journal : 電子情報通信学会2015年ソサエティ大会, C-14-23, Sendai, 8-11 Sept. 2015.
  • No. 844
  • Authors : 菅原健太, 川﨑鉄哉, 玉虫 元, 末光眞希, 吹留博一(東北大), 可児淳一, 寺田 純, 桑野 茂(NTT), 岩月勝美, 末光哲也, 尾辻泰一(東北大)
  • Title : グラフェンFET及びInGaAs-HEMTを用いたミリ波帯光電子ミキサ
  • Journal : 電子情報通信学会2015年ソサエティ大会, C-10-3, 仙台, 8-11 Sept. 2015.
  • No. 843
  • Authors : H. Wako, T. Watanabe, A. Satou, K. Kawahara, H. Ago, V. Ryzhii, and T. Otsuji
  • Title : Observation of amplified spontaneous terahertz emission from optically pumped monolayer intrinsic graphene
  • Journal : FTT: Int. Symp. Frontiers in Terahertz Technology, Pos2.16, Congress Center in ACT CITY, Hamamatsu, Japan, 31 Aug. 2015.
  • No. 842
  • Authors : S. Arnold, D. Yadav, S. Boubanga Tombet, V. Ryzhii, and T. Otsuji
  • Title : Terahertz detection in double-graphene-layer heterostructures
  • Journal : FTT: Int. Conf. Frontiers in Terahertz Technology Proc., Pos2.32 (2 pages), Congress Center in ACT CITY, Hamamatsu, Japan, 31 Aug. 2015.
  • No. 841
  • Authors : S. Boubanga Tombet, D. Yadav, S. Arnold, T. Watanabe, V. Ryzhii, and T. Otsuji
  • Title : Emission and detection of terahertz radiation in double-graphene-layer van der Waals heterostructures
  • Journal : IRMMW-THz 2015: the 40th Int. Conf. on Infrared, Millimeter and Terahertz Waves Dig., H1D-1, The Chinese University of Hong Kong, Hong Kong, China, 27 Aug. 2016.DOI: 10.1109/IRMMW-THz.2015.7327487
  • No. 840
  • Authors : F. Kasuya, T. Kawasaki, S. Hatakeyama, S. Boubanga Tombet, T. Suemitsu, T. Otsuji, G. Ducournau, D. Coquillat, W. Knap, Y. Takida, H. Ito, H. Minamide, D.V. Fateev, V.V. Popov, Y.M. Meziani, A. Satou
  • Title : Broadband characteristics of ultrahigh responsivity of asymmetric dual-grating-gate plasmonic terahertz detectors
  • Journal : IRMMW-THz 2015: the 40th Int. Conf. on Infrared, Millimeter and Terahertz Waves Dig., WS-45, The Chinese University of Hong Kong, Hong Kong, China, 26 Aug. 2016.DOI: 10.1109/IRMMW-THz.2015.7327926
  • No. 839
  • Authors : S. Boubanga Tombet
  • Title : Plasmon-resonant terahertz emitters and detectors and their system applications
  • Journal : Int. Conf. on Nanotechnology Congress & Expo Abstracts, T8-3, p. 79, Fleming's Conference Hotel, Frankfurt, Germany 11-13 Aug. 2015. (invited)DOI: 10.4172/2157-7439.S1.021
  • No. 838
  • Authors : V. Ya Aleshkin, A.A. Dubinov, M. Ryzhii, V. Ryzhii, and T. Otsuji
  • Title : Electron capture in van der Waals graphene-based heterostructures with WS2 barrier layers
  • Journal : J. Phys. Soc. Jpn., Vol. 84, No. 9, pp. 094703-1-7, Aug. 2015.DOI: 10.7566/JPSJ.84.094703
  • No. 837
  • Authors : Ryzhii V., Otsuji T., Ryzhii M., Mitin V., Shur M.S.
  • Title : Effect of indirect interband transitions on terahertz conductivity i
  • Journal : decorated" graphene bilayer heterostructures, " Lithuanian J. Phys., vol. 55, No. 4, pp. 243–248, 2015.DOI:
  • No. 836
  • Authors : V. Ryzhii, V. Mitin, T. Otsuji V. Ya Aleshkin, A.A. Dubinov, M. Ryzhii, and M.S. Shur
  • Title : Plasmonic enhancement of graphene heterostructure based terahertz detectors
  • Journal : META'15: The 6th International Conference on Metamaterials, Photonic Crystals and Plasmonics Proceedings, pp. 1323-1324, New York, USA, 4-7 Aug. 2015. (invited)
  • No. 835
  • Authors : T. Otsuji, A. Satou, S.A. Boubanga Tombet, V. Ryzhii, V.V. Popov, V. Mitin, and M.S. Shur
  • Title : Emission and detection of terahertz radiation using two-dimensional plasmonic metamaterials
  • Journal : META'15: The 6th International Conference on Metamaterials, Photonic Crystals and Plasmonics Proceedings, pp. 1319-1320, The City College of New York, New York, USA, 4-7 Aug. 2015. (invited)
  • No. 834
  • Authors : P. Faltermeier, P. Olbrich, W. Probst, L. Schell, T. Watanabe, S.A. Boubanga-Tombet, T. Otsuji, and S.D. Ganichev
  • Title : Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors
  • Journal : MSS-17: 17th International Conference on Modulated Semiconductor Structures, Tu-B2-3, Sendai, Japan 26-31 July 2015.
  • No. 833
  • Authors : V. Ryzhii, T. Otsuji, D. Svintsov, V. Mitin, and M.S. Shur
  • Title : Giant amplificaion of terahertz radiation in pumped graphene bilayers
  • Journal : EP2DS-21: 21st International Conference on Electronic Properties of Two-Dimensional Systems, Mo-PE-1, Sendai, Japan, 26-31 July 2015.
  • No. 832
  • Authors : D. A. Svintsov, Z.A. Devizorova, V. I. Ryzhii, and T. Otsuji
  • Title : Surface plasmon amplification in van der Waals heterostructures
  • Journal : EP2DS-21: 21st International Conference on Electronic Properties of Two-Dimensional Systems, Mo-PE-91, Sendai, Japan, 26-31 July 2015.
  • No. 831
  • Authors : 尾辻
  • Title : グラフェンを中心とする二次元原子薄膜ヘテロ構造とそのテラヘルツデバイス応用
  • Journal : ニューダイヤモンドフォーラム平成27年度第1回研究会, 東大駒場キャンパス, 東京, July 23, 2015. (invited)
  • No. 830
  • Authors : T. Otsuji, A. Satou, S. Boubanga-Tombet, T. Watanabe, G. Ducournau, Y.M. Meziani, W. Knap, and V.V. Popov
  • Title : Plasmonic terahertz emitters and detectors for sensing and wireless communications
  • Journal : Proc. PIERS 2015 in Prague: The 36th Progress in Electromagnetics Research Symposium, pp. 2247-2253, Prague, Czech Republic, 6-9 July 2015. (invited)
  • No. 829
  • Authors : D. Yadav, S. Boubanga Tombet, S. Arnold, T. Watanabe, V. Ryzhii, and T. Otsuji
  • Title : Terahertz emission and detection in double-graphene-layer heterostructure
  • Journal : MTSA-TeraNano: the 3rd International Symposium on Microwave/Terahertz Science and Applications and the 6th International Symposium on Terahertz Nanoscience, B-3-10, Okinawa, Japan, July 2015.
  • No. 828
  • Authors : G. Tamamushi, K. Sugawara, M.B. Hussin, T. Suemitsu, R. Suto, H. Fukidome, M. Suemitsu, and T. Otsuji
  • Title : High carrier mobility graphene-channel FET using SiN gate stack
  • Journal : CSW 2015: Compound Semiconductor Week 2015, ISCS: The 42nd International Symposium on Compound Semiconductors, Tu1AD2.4, UCSB, Santa Barbara, CA, USA, 29 June - 2 July 2015.
  • No. 827
  • Authors : V. Ryzhii, D. Svintsov, T. Otsuji, V. Mitin, and M.S. Shur
  • Title : Enhancement of terahertz gain in optically and electrically pumped graphene bilayers due to interband indirect transitions
  • Journal : EDISON: the 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Mo I-4, Salamanca, Spain, 29 June - 2 July, 2015.
  • No. 826
  • Authors : A. Satou, Y. Koseki, V. Ryzhii, V.V. Popov, and T. Otsuji
  • Title : Computational study of plasmon instabilities in dual-grating-gate graphene transistor
  • Journal : EDISON: the 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Mo P-10, Salamanca, Spain, 29 June - 2 July, 2015.
  • No. 825
  • Authors : S. Boubanga Tombet, D. Yadav, T. Watanabe, V. Ryzhii, and T. Otsuji
  • Title : Terahertz emission in a double-graphene-layer heterostructure
  • Journal : EDISON: the 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Mo II-2 (1 page), Salamanca, Spain, 29 June - 2 July, 2015.
  • No. 824
  • Authors : T. Yoshida, S. Hatakeyama, N. Yasukawa, T. Otsuji, and T. Suemitsu
  • Title : 65-nm gate InGaAs-HEMTs with slant field plates
  • Journal : CSW 2015: Compound Semiconductor Week 2015, IPRM: The 27th International Conference on Indium Phosphide and Related Materials, Mo4PP-E.15, UCSB, Santa Barbara, CA, USA, 29 June - 2 July 2015.
  • No. 823
  • Authors : N. Yasukawa, S. Hatakeyama, T. Yoshida, T. Kimura, T. Matsuoka, T. Otsuji, and T. Suemitsu
  • Title : Drain depletion length in InAlN/GaN MIS-HEMTs with slant field plates
  • Journal : CSW 2015: Compound Semiconductor Week 2015, IPRM: The 27th International Conference on Indium Phosphide and Related Materials, Mo4PP-E.2, UCSB, Santa Barbara, CA, USA, 29 June - 2 July 2015.
  • No. 822
  • Authors : K. Sugawara, T. Kawasaki, M.B. Hussin, G. Tamamushi, M. Suemitsu, H. Fukidome, K. Iwatsuki, T. Suemitsu, V. Ryzhii, T. Otsuji, J. Kani, J. Terada, and S. Kuwano
  • Title : Photonic frequency conversion using graphene FETs for future fully coherent access network
  • Journal : OECC: The 20th OptoElectronics and Communications Conference, JSuB.05, pp. 1-3, Everbrite Convention Center, Shanghai, China, 28 June - 2 Julay 2015.DOI: 10.1109/OECC.2015.7340108
  • No. 821
  • Authors : D. Yadav, S. Boubanga Tombet, T. Watanabe, V. Ryzhii, and T. Otsuji
  • Title : Terahertz emitters and detectors based on double-graphene-layer Van der Waals heterostructures
  • Journal : DRC: the 73rd Device Research Conference Digest, VII-A.3, pp. 271-272, Ohio State Univ., Ohio, USA, 21-24 June 2015.DOI: 10.1109/DRC.2015.7175678
  • No. 820
  • Authors : S. Boubanga Tombet
  • Title : Plasmon-resonant terahertz emitters and detectors and their system applications
  • Journal : 2015-Collaborative Conference on 3D and Materials Research (CC3DMR) Proc., pp. 160-164, BEXCO, Busan, South Korea, June 15 – 19, 2015. (invited)
  • No. 819
  • Authors : Taiichi Otsuji, Stephane Boubanga-Tombet, Akira Satou, Takayuki Watanabe, Victor Ryzhii, Maxim Ryzhii, Vyacheslav V. Popov, Alexander A. Dubinov, Vladimir Mitin, and Michael Shur
  • Title : Terahertz wave generation using graphene and III-V semiconductor heterostructures
  • Journal : RJUS TeraTech-2015: The 4th Russia–Japan–USA Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies, No. 1.6, IMT, ISSP, Chernogolovka, Russia, 9-12 June 2015. (invited)
  • No. 818
  • Authors : M. Ryzhii, V. Mitin, D. Svintsov, V. Ryzhii, and T. Otsuji
  • Title : Effective suppression of intraband (Drude) terahertz absorption in hybrid graphene-quantum dot heterostructures with population inversion
  • Journal : RJUS TeraTech-2015: The 4th Russia–Japan–USA Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies, No. 4.2, IMT, ISSP, Chernogolovka, Russia, 9-12 June 2015. (invited)
  • No. 817
  • Authors : V. Mitin, A. Sergeev, T. Yore, V. Ryzhii, and T. Otsuji
  • Title : THz/IR sensing based on 2DEG in multilayer-graphene and metal dichalcogenide structures
  • Journal : RJUS TeraTech-2015: The 4th Russia–Japan–USA Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies, No. 4.3, IMT, ISSP, Chernogolovka, Russia, 9-12 June 2015. (invited)
  • No. 816
  • Authors : A. Satou, Y. Koseki, V. Ryzhii, V.V. Popov, and T. Otsuji
  • Title : Computational study of graphene plasmons: damping mechanisms and instabilities
  • Journal : RJUS TeraTech-2015: The 4th Russia–Japan–USA Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies, No. 1.7, IMT, ISSP, Chernogolovka, Russia, 9-12 June 2015. (invited)
  • No. 815
  • Authors : S. Boubanga Tombet, d T. Otsuji
  • Title : Emission and detection of THz radiation using graphene and III-V semiconductor heterostructures
  • Journal : CMOS-ETR: Int. Symp. On CMOS Emerging Technologies Research, O2-5, Vancouver, Canada, 20-22 May 2015.
  • No. 814
  • Title : A. Korkin, S. Goodnick, R. Nemanich, Eds., Nanoscale Materials and Devices for Electronics, Photonics, and Solar Energy, Nanostructure Science and Technology, Springer, Switzerland 2015. ISBN: 978-3-319-18632-0 [T. Otsuji, V. Ryzhii, S. Boubanga Tombet, A. Satou, M. Ryzhii, V.V. Popov, W. Knap, V. Mitin, and M. Shur, "Terahertz wave generation using graphene and compound semiconductor nano-heterostructures, " pp. 237-261.] DOI: 10.1007/978-3-319-18633-7_7
  • No. 813
  • Authors : T. Kawasaki, K. Sugawara, A. Dobroiu, H. Wako, T. Watanabe, T. Suemitsu, V. Ryzhii, K. Iwatsuki, S. Kuwano, J. Kani, J. Terada, and T. Otsuji
  • Title : InGaAs channel HEMTs for photonic frequency double mixing conversion over the sub-THz band
  • Journal : IMS: Int. Microwave Symposium Dig., pp. 1-4, Phoenix Convention Center, Phoenix, AZ, USA, 17-22 May 2015.DOI: 10.1109/MWSYM.2015.7166896
  • No. 812
  • Authors : A. Satou, V. Ryzhii, and T. Otsuj
  • Title : International Scientific Seminars on Fundamental and Applied Problems of Photonics and Condensed Matter Physics 20
  • Journal : , J. Phys. Conf. Ser., vol. 584, pp. 012018-1-6, 2015.DOI: 10.1088/1742-6596/584/1/012018
  • No. 811
  • Authors : D. Yadav, S. Boubanga Tombet, T. Watanabe, V. Ryzhii, and T. Otsuji
  • Title : Terahertz emission in double-graphene-layer structure
  • Journal : CLEO: Int. Conf. on Lasera and Electro-Optics Tech. Dig., STu2H.3, San Jose, 10-15 May 2015.DOI:10.1364/CLEO_SI.2015.STu2H.3
  • No. 810
  • Authors : T. Otsuji, A. Dubinov, M. Ryzhii, S. Boubanga Tombet, A. Satou, V. Mitin, M.S. Shur, V. Ryzhii
  • Title : Graphene active plasmionics for terahertz device applications
  • Journal : SPIE Defense + Security, and Sensing Technology + Applications, Conference 9476 on Automatic Target Recognition XXV, 9476-39, Baltimore, MD, USA, 20-24 April 2015; Proc. SPIE, Vol. 9476, pp. 94760Y-1-11, April 20, 2015. (invited)DOI: 10.1117/12.2185118
  • No. 809
  • Title : Ho-Jin Song, Tadao Nagatsuma Ed., Handbook of Terahertz Technologies: Devices and Applications, Pan Stanford Publishing, Singapore, 2015. ISBN: 978-981-4613-08-8 [T. Otsuji, "Chapt. 9: Plasma-wave devices for terahertz applications, "pp. 221-275.]
  • No. 808
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V. Ya Aleshkin, A.A. Dubinov, V. Mitin, and M.S. Shur
  • Title : Vertical electron transport in van der Waals heterostructures with graphene layers
  • Journal : J. Appl. Phys., Vol. 117, Iss. 15, pp. 154504-1-9, April 2015.DOI: 10.1063/1.4918313
  • No. 807
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V.Ya Aleshkin, A.A. Dubinov, D. Svintsov, V. Mitin, and M.S. Shur
  • Title : Graphene vertical cascade interband terahertz and infrared photodetectors
  • Journal : 2D Materials, Vol. 2, No. 2, pp. 025002-1-10, April 2015.DOI: 10.1088/2053-1583/2/2/025002
  • No. 806
  • Title : Kazuhiko Matsumoto Ed., Frontiers of Graphene and Carbon Nanotubes, K. Matumoto ed., Springer, Japan, March 2015. ISBN 978-4-431-55371-7 [T. Otsuji, "Graphene Terahertz Devices, " Part I, Chapt. 8, pp. 105-122. DOI: 10.1007/978-4-431-55372-4_8]
  • No. 805
  • Authors : D. Svintsov, T. Otsuji, V. Mitin, M.S. Shur, and V. Ryzhii
  • Title : Negative terahertz conductivity in disordered graphene bilayers with population inversion
  • Journal : Appl. Phys. Lett., Vol. 106, Iss. 11, pp. 113501-1-5, March 2015.DOI: 10.1063/1.4915314
  • No. 804
  • Authors : T. Otsuji, S. Boubanga Tombet, and V. Ryzhii
  • Title : Recent advances in graphene heterostructures toward the creation of terahertz lasers
  • Journal : Graphene 2015: 5th Edition of the European Conference in Graphene and 2D Materials, Imaginano Abstracts Book, p. 131, Bilbao, Spain, 10-13 March 2015. (invited)
  • No. 803
  • Authors : T. Suemitsu, K. Kobayashi, S. Hatakeyama, N. Yasukawa, T. Yoshida, T. Otsuji, D. Piedra, and T. Palacios
  • Title : A New Process Approach for Slant Field Plates in GaN-Based HEMTs
  • Journal : 7th Int. Symp. On Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials, 14a-D7-2, Nagoya, Japan, B2-I-02, 29 March 2015. (invited)
  • No. 802
  • Authors : 玉虫 元, 菅原 健太, Mastura binti Hussin, 末光 哲也, 須藤 亮太, 吹留 博一, 末光 眞希, 尾辻 泰一
  • Title : SiNゲートスタックによる高キャリア移動度グラフェンチャネルFET
  • Journal : 第62回応用物理学会春季学術講演会 予稿集, 平塚, 14a-D7-2, 14 March 2015.
  • No. 801
  • Authors : 安川 奈那, 畠山 信也, 吉田 智洋, 尾辻 泰一, 末光 哲也
  • Title : InAlN/GaN HEMTs における傾斜型フィールドプレートによるドレイン空乏領域長への影響
  • Journal : 第62回応用物理学会春季学術講演会 予稿集, 13p-P17-7, 平塚, 13 March 2015.
  • No. 800
  • Authors : 菅原 健太, 川﨑 鉄哉, Binti Hussin Mastura, 玉虫 元, 末光 眞希, 吹留 博一, 可児 淳一, 寺田 純, 桑野 茂, 岩月 勝美, 末光 哲也, 尾辻 泰一
  • Title : グラフェンチャネルFETのサブテラヘルツ帯ミキサ応用
  • Journal : 第62回応用物理学会春季学術講演会 予稿集, 13a-A14-9, 13, 平塚, March 2015.
  • No. 799
  • Authors : 佐藤 昭, Stephane Boubanga Tombet, 渡辺 隆之, 川﨑 鉄哉, 糟谷 文月, 末光 哲也, Denis V. Fateev, Vyacheslav V. Popov, 南出 泰亜, 伊藤 弘昌, Dominique Coquillat, Wojciech Knap, Guillaume Ducournau, Yahya Meziani, 尾辻 泰一
  • Title : 非対称二重格子ゲートHEMTによるテラヘルツ波検出の周波数特性
  • Journal : 第62回応用物理学会春季学術講演会 予稿集, 12p-A14-10, 平塚, 12 March 2015.
  • No. 798
  • Authors : 小関 勇気, リズィー ヴィクトール, 尾辻 泰一, ポポフ ヴィアチェスラフ, 佐藤 昭
  • Title : 非対称二重格子ゲート構造を有するグラフェントランジスタにおけるプラズマ不安定性
  • Journal : 第62回応用物理学会春季学術講演会 予稿集, 12a-A14-7, 平塚, 12 March 2015.
  • No. 797
  • Authors : 若生 洋由希, 佐藤 昭, ヴィクトール リズィー, 河原 憲治, 吾郷 浩樹, 河野 淳一郎, 尾辻 泰一
  • Title : グラフェンのテラヘルツ帯における運動量緩和時間の実験的導出
  • Journal : 第62回応用物理学会春季学術講演会 予稿集, 12a-A14-2, 平塚, 12 March 2015.
  • No. 796
  • Authors : 小岩 匡, 岡 謙吾, 末光 哲也, 尾辻 泰一, 内野 俊
  • Title : 接触抵抗改善によるグラフェンFETの高性能化
  • Journal : 第62回応用物理学会春季学術講演会 予稿集, 11a-P6-41, 平塚, 11 March 2015.
  • No. 795
  • Authors : 吉田 智洋, 畠山 信也, 安川 奈那, 尾辻 泰一, 末光 哲也
  • Title : SiCN鋳型プロセスを用いた傾斜フィールドプレート構造を持つInGaAs系HEMTの作製とその特性
  • Journal : 第62回応用物理学会春季学術講演会 予稿集, 11a-A21-5, 平塚, 11 March 2015.
  • No. 794
  • Authors : 佐藤 昭, 尾辻泰一
  • Title : 超高速テラヘルツ無線を支える光電子デバイス技術の動向
  • Journal : 信学会総合大会 予稿集, CI-3-8, 草津, 10 March 2015. (invited)
  • No. 793
  • Authors : 板津太郎, 佐野栄一, 矢部裕平, Victor Ryzhii, 尾辻泰一
  • Title : 金属メッシュ付単層グラフェンによるテラヘルツ波放射
  • Journal : 信学会総合大会 予稿集, C10-12, 草津, 10 March 2015.
  • No. 792
  • Authors : O.V. Polischuk, V.V. Popov, and T. Otsuji
  • Title : Superradiant amplification of terahertz radiation by plasmons in inverted graphene with a planar distributed Bragg resonator
  • Journal : XIX Symposium on Nanophysics and Nanoelectronics, Nizhny Nobgorod, Russia, 10-14 March, 2015.
  • No. 791
  • Authors : V.V. Popov, D.V. Fateev, A. Satou, S.A. Boubanga-Tombet, Y. Kurita, T. Watanabe, and T. Otsuji
  • Title : Terahertz photocurrents generated in two-dimensional electron systems by non-centrosymmetric plasmon modes
  • Journal : OTST: Int. Conf. on Optical Terahertz Science and Technology, PS3-1, San Diego, CA, USA, 8-13 March 2015.
  • No. 790
  • Authors : A. Satou, T. Kawasaki, S. Hatakeyama, S. Boubanga Tombet, T. Suemitsu, G. Ducournau, D. Coquillat, D.V. Fateev, V.V. Popov, Y.M. Meziahi, and T. Otsuji
  • Title : Geometrical dependence of ultrahigh responsivity and its broadband characteristics of InP-based asymmetric dual-grating-gate high-electron-mobility transistors
  • Journal : OTST: Int. Conf. on Optical Terahertz Science and Technology, PS2-9, San Diego, CA, USA, 8-13 March 2015.
  • No. 789
  • Authors : S. Boubanga Tombet, D. Yadav, T. Watanabe, V. Ryzhii, and T. Otsuji
  • Title : Terahertz emission in a double-graphene-layer heterostructure
  • Journal : OTST: Int. Conf. on Optical Terahertz Science and Technology Abstracts Book, p. 56, San Diego, CA, USA, 8-13 March 2015.
  • No. 788
  • Authors : S. Takabayashi, M. Yang, T. Eto, H. Hayashi, S. Ogawa, T. Otsuji, and Y. Takakuwa
  • Title : Controlled oxygen-doped diamond-like carbon film synthesized by photoemission-assisted plasma
  • Journal : Diamond and Related Materials, Vol. 53, pp. 11-17, March 2015.DOI: 10.1016/j.diamond.2015.01.001
  • No. 787
  • Authors : M.Y. Morozov, A.R. Davoyan, I.M. Moiseenko, A. Satou, T. Otsuji, and V.V. Popov
  • Title : Active guiding of Dirac Plasmons in graphene
  • Journal : Appl. Phys. Lett., Vol. 106, pp. 061105-1-5, Feb. 2015.DOI: 10.1063/1.4907644
  • No. 786
  • Authors : Taiichi Otsuji, Akira Satou, Takayuki Watanabe, Stephane Albon Boubanga-Tombet, Alexander Dubinov, Vyacheslav V. Popov, Michael Shur, and Victor Ryzhii
  • Title : Recent advances in the research toward graphene-based terahertz lasers
  • Journal : SPIE Photonics West, 9382-43, San Francisco, CA, USA, 7-12 Feb. 2015. (invited); Proc. SPIE Vol. 9382, pp. 938219-1-10, March 2015.DOI: 10.1117/12.2079411
  • No. 785
  • Authors : T. Watanabe, T. Kawasaki, A. Satou, S.A. Boubanga Tombet, T. Suemitsu, G. Ducournau, D. Coquillat, W. Knap, H. Minamide, H. Ito, Y.M. Meziani, V.V. Popov, and T. Otsuji
  • Title : Room-temperature zero-bias plasmonic THz detection by asymmetric dual-grating-gate HEMT
  • Journal : SPIE Photonics West, Paper No. 9362-13, San Francisco, CA, USA, 11 Feb. 2015; Proc. SPIE Vol. 9362, pp. 93620F-1-7, March 2015.DOI: 10.1117/12.2079184
  • No. 784
  • Authors : 佐藤昭, ステファン ボーバンガ トムベット, 渡辺隆之, 川﨑鉄哉, デニス ファティエフ, ヴャチェスラフ ポポフ, 南出泰亜, 伊藤弘昌, ドミニク コキラ, ヴォイチェック クナップ, ギローム ドュコーナ, 尾辻泰一
  • Title : 非対称二重格子ゲート高電子移動度トランジスタを用いたプラズモニックテラヘルツ検出の広帯域特性
  • Journal : 信学会電子デバイス研究会, 仙台, Dec. 22-23, 2013; 信学技報, Vol. 114, no. 387, ED2014-114, pp. 69-74, Dec. 23, 2014.
  • No. 783
  • Authors : 板津太郎, 佐野栄一, 矢部裕平, Victor Ryzhii, 尾辻泰一
  • Title : 金属メッシュ付き単層グラフェンからの増幅されたテラヘルツ波放射
  • Journal : 信学会電子デバイス研究会, 仙台, Dec. 22-23, 2013; 信学技報, Vol. 114, no. 387, ED2014-114, pp. 91-96, Dec. 23, 2014.
  • No. 782
  • Authors : 川崎鉄哉, 吉田智洋, 菅原健太, Adrian Dobroiu, 渡辺隆之, 杉山弘樹, 若生洋由希, 可児淳一, 寺田 純, 桑野 茂, 吾郷浩樹, 河原憲次, 岩月勝美, 末光哲也, 尾辻泰一
  • Title : InGaAsチャネルHEMT及びグラフェンチャネルFETを用いたミリ波帯フォトミキシング
  • Journal : 信学会電子デバイス研究会, 仙台, Dec. 22-23, 2014; 信学技報, Vol. 114, no. 387, ED2014-100, pp. 9-13, Dec. 23, 2014.
  • No. 781
  • Authors : S.A. Boubanga Tombet, A. Satou, V.V. Popov, and T. Otsuji
  • Title : THz detection using a dual-grating-gate plasmonic detector
  • Journal : TeraNano-V: The Fifth International Symposium on Terahertz Nanoscience, Martinique, Fort de France, 1-5 Dec. 2014.
  • No. 780
  • Authors : T. Otsuji, V. Ryzhii, A. Dubinov, V. Popov, V. Mitin, and M..S. Shur
  • Title : Graphene heterostructures for current-injection terahertz lasing
  • Journal : TeraNano-V: The Fifth International Symposium on Terahertz Nanoscience, S12, 1530-1610, Martinique, Fort de France, 1-5 Dec. 2014. (invited)
  • No. 779
  • Authors : 尾辻泰一
  • Title : グラフェンおよび化合物半導体ヘテロ接合構造による二次元プラズモンを利用したテラヘルツ波の発生と検出
  • Journal : 防衛技術協会 光波, ミリ波センシング研究部会第7回報告会 シンポジウム発表資料, pp. 1-30, 市ヶ谷, 東京, 28 Nov. 2014.
  • No. 778
  • Authors : 尾辻泰一
  • Title : グラフェンの超高周波光電子デバイスへの応用
  • Journal : J. Vaccum Soc. Jpn., Vol. 57, No. 12, pp. 444-450, Dec. 2014. (invited)DOI: 10.3131/jvsj2.57.444
  • No. 777
  • Authors : 尾辻泰一
  • Title : テラヘルツ波検出技術の動向
  • Journal : 信学誌, Vol. 26, No. 11, pp. 931-937, Nov. 2014.
  • No. 776
  • Authors : D. Svintsov, V.G. Leiman, V. Ryzhii, T. Otsuji, and M.S. Shur
  • Title : Graphene nanoelectromechanical resonators for detection of modulated terahertz radiation
  • Journal : J. Phys. D, Vol. 47, Iss. 50, pp. 505105-1-7, Nov. 2014.DOI: 10.1088/0022-3727/47/50/505105
  • No. 775
  • Authors : T. Otsuji, d M.S. Shur
  • Title : Terahertz plasmonics: good results and great expectations
  • Journal : IEEE Microwave Magazine, Vol. 15, Iss. 7, pp. 43-50, Nov-Dec. 2014.DOI: 10.1109/MMM.2014.2355712
  • No. 774
  • Authors : D. Svintsov, V. Ryzhii, and T. Otsuji
  • Title : Negative dynamic Drude conductivity in pumped graphene
  • Journal : Appl. Phys. Express, Vol. 7, Iss. 11, pp. 115101-1-4, Nov. 2014.DOI: 10.7567/APEX.7.115101
  • No. 773
  • Authors : T. Otsuji
  • Title : Recent advances in the research toward graphenebased terahertz lasers
  • Journal : Indo-Japan Program on "Graphene and Related Materials, " JNCASR, Bangalore, India, 5-6 Nov. 2014. (invited)
  • No. 772
  • Authors : S. Boubanga Tombet, T. Otsuji, V. Popov, and W. Knap
  • Title : Plasmon-resonant terahertz emitters and detectors and their system applications
  • Journal : ICMNE: Int. Conf. on Micro- and Nano-Electronics, L2-04, Zvenigorod, Moscow Region, Russia, 6-10 Oct. 2014. (invited)
  • No. 771
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V. Mitin, and M.S. Shur
  • Title : Graphene terahertz electronics and optoelectronics
  • Journal : ICMNE: Int. Conf. on Micro and Nano-Electronics, L2-03, Zvenigorod, Moscow Region, Russia, 6-10 Oct. 2014. (invited)
  • No. 770
  • Authors : 尾辻泰一
  • Title : グラフェンを利用したプラズモニックテラヘルツデバイス技術の研究最前線
  • Journal : IEEE Electron Device Society 関西チャプター講演会, DL講演会, 3 Oct. 2014. (invited)
  • No. 769
  • Authors : T. Otsuji, T. Watanabe, A. Satou, S. A. Boubanga-Tombet, A. Dubinov, V. V. Popov, V. Mitin, V. Ryzhii
  • Title : Giant Terahertz Gain by Excitation of Surface Plasmon Polaritons in Optically Pumped Graphene
  • Journal : ISGD: 4th International Symposium on Graphene Devices, A4.05, Seattle, USA, 25 Sept. 2014. (invited)
  • No. 768
  • Authors : V. Ryzhii, d T. Otsuji
  • Title : Concepts of double-graphene-layer terahertz plasmonic devices
  • Journal : ISGD: 4th International Symposium on Graphene Devices, A1.06, Seattle, USA, 22 Sept. 2014. (invited)
  • No. 767
  • Authors : M.B. Hussin, K. Sugawara, T. Suemitsu, and T. Otsuji
  • Title : Improving Graphene Field-Effect Transistor Performance by Self-Aligned Source/Drain Process with Aluminum Sacrificial Layer
  • Journal : RPGR 2014: the 6th Int. Conf. on Recent Progress on Graphene Research, PH-06, Taipei, 21-25 Sept. 2014.
  • No. 766
  • Authors : T. Itatsu, E. Sano, Y. Yabe, V. Ryzhii, and T. Otsuji
  • Title : Increased terahertz emission from monolayer graphene with field enhancement effect
  • Journal : RPGR 2014: the 6th Int. Conf. on Recent Progress on Graphene Research, PH-13, Taipei, 21-25 Sept. 2014.
  • No. 765
  • Authors : V. Ryzhii, A. Satou, T. Otsuji, M. Ryzhii, V. Mitin and M. S. Shur
  • Title : Graphene vertical hot-electron terahertz detectors
  • Journal : J. Appl. Phys., Vol. 116, Iss. 11, pp. 114504-1-9, 2014.DOI: 10.1063/1.4895738
  • No. 764
  • Authors : 畠山信也, 小林健悟, 吉田智洋, 尾辻泰一, 末光哲也
  • Title : 傾斜型フィールドプレートを用いたAlGaN/GaN HEMTs のRF 特性
  • Journal : 第75回応用物理学会秋季学術講演会 予稿集, 19p-PB2-7, 札幌, 19 Sept. 2014.
  • No. 763
  • Authors : 鷹林将, 林広幸, 楊猛, 小川修一, 尾辻泰一, 高桑雄二
  • Title : ダイヤモンドライクカーボン薄膜へのナノ制御ドーピング
  • Journal : 第75回応用物理学会秋季学術講演会 予稿集, 18p-A8-11, 札幌, 18 Sept. 2014.
  • No. 762
  • Authors : 鷹林将, 林広幸, 楊猛, 小川修一, 尾辻泰一, 高桑雄二
  • Title : ダイヤモンドライクカーボン薄膜のラマン解析 (I): 関数解析について
  • Journal : 第75回応用物理学会秋季学術講演会 予稿集, 18p-A8-12, 札幌, 18 Sept. 2014.
  • No. 761
  • Authors : 鷹林将, 林広幸, 楊猛, 小川修一, 尾辻泰一, 高桑雄二
  • Title : ダイヤモンドライクカーボン薄膜のラマン解析 (II): 電気特性との関係性
  • Journal : 第75回応用物理学会秋季学術講演会 予稿集, 18p-A8-13, 札幌, 18 Sept. 2014.
  • No. 760
  • Authors : Hussin Mastura, Kenta Sugawara, Tetsuya Suemitsu, Taiichi Otsuji
  • Title : An Improved Self-Aligned Ohmic-Contact Process for Graphene-Channel Field-Effect Transistors
  • Journal : 第75回応用物理学会秋季学術講演会 予稿集, JSAP-OSA Joint Symposia, 17p-C3-5, Sapporo, Japan, 17 Sept. 2014.
  • No. 759
  • Authors : 吉田智洋, 小山雅史, 渡邊邦彦, 楳田洋太郎, 尾辻泰一, 末光哲也
  • Title : F 級増幅器におけるInGaAs-HEMT ゲート寄生遅延時間の影響
  • Journal : 第75回応用物理学会秋季学術講演会 予稿集, 17a-A27-5, 札幌, 17 Sept. 2014.
  • No. 758
  • Authors : D. Coquillat, P. Zagrajek, N. Dyakonova, K. Chrzanowski, J. Marczewski, Y. Kurita, A. Satou, K. Kobayashi, S. Boubanga Tombet, V. V. Popov, T. Suemitsu, T. Otsuji, W. Knap
  • Title : Detection of terahertz and mid-infrared radiations by InP-based asymmetric dual-grating-gate HEMTs
  • Journal : IRMMW-THz: Int. Conf. on Infrared, Millimeter, and Terahertz Waves Dig., pp. 1-2, Tucson, AZ, USA, 15-19 Sept. 2014.DOI: 10.1109/IRMMW-THz.2014.6956522
  • No. 757
  • Authors : T. Itatsu, E. Sano, Y. Yabe, V. Ryzhii, T. Otsuji
  • Title : Enhanced terahertz emission from monolayer graphene with metal mesh structure
  • Journal : International Conference on Diamond and Carbon Materials, P2.108, Madrid, Spain, 7-11 Sept. 2014.
  • No. 756
  • Authors : Susumu Takabayashi, Meng Yang, Shuichi Ogawa, Hiroyuki Hayashi, Radek Jesko, Taiichi Otsuji, Yuji Takakuwa
  • Title : Relationship between the structure and electrical characteristics of diamond-like carbon films
  • Journal : J. Appl. Phys., Vol. 116, Iss. 09, pp. 093507-1-11, Sept. 2014.doi: 10.1063/1.4894626
  • No. 755
  • Authors : V.V. Popov, T. Otsuji, and V. Ryzhii
  • Title : Amplification of terahertz radiation by graphene metasurfaces
  • Journal : Metamaterials 2014: The 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics Proc., pp. 244-246, Tech. Univ. Denmark, Copenhagen, Denmark, 27 Aug. 2014.DOI: 10.1109/MetaMaterials.2014.6948662
  • No. 754
  • Authors : D. Coquillat, Y. Kurita, K. Kobayashi, N. Dyakonova, F. Teppe, C. Consejo, D. But, T. Otsuji, and W. Knap
  • Title : Contribution of ideality factor, gate leakage current, and loading effect to terahertz detection by asymmetric dual-grating gate HEMTs
  • Journal : Condensed Matter in Paris, TU-71, Paris, France 25 Aug. 2014.
  • No. 753
  • Authors : S. Boubanga Tombet, T. Otsuji, A. Satou, A.A. Dubinov, V.V. Popov, and V. Ryzhii
  • Title : Graphene active plasmonics for new types of terahertz laser
  • Journal : Condensed Matter in Paris, TU-70, Paris, France 25 Aug. 2014.
  • No. 752
  • Authors : T. Otsuji, V. Ryzhii, S. Boubanga Tombet, T. Watanabe, A. Satou, M. Ryzhii, A. Dubinov, V. Ya Aleshkin, V. Popov, V. Mitin, and M.S. Shur
  • Title : Graphene plasmonic heterostructures for new typse of terahertz lasers
  • Journal : SPIE Optics + Photonics 2014, Conf. 9199, Terahertz Emission, Detection and Applications V, 9199-14, San Diego, CA, USA, 17 Aug. 2014. (invited); Proc. SPIE, Vol. 9199, pp. 91990F-1-10DOI: 10.1117/12.2061510
  • No. 751
  • Authors : Y. Fukada, J. Kani, J. Terada, N. Yoshimoto, K. Iwatsuki, and T. Otsuji
  • Title : Improving resilience of access networks by the synergistic use of wired and wireless technologies
  • Journal : 2014 XXXIth URSI GASS: General Assembly and Scientific Symposium, Beijing, China, Aug. 2014.DOI: 10.1109/URSIGASS.2014.6929493
  • No. 750
  • Authors : T. Kawasaki, K. Sugawara, A. Dobroiu, T. Eto, Y. Kurita, K. Kojima, Y. Yabe, H. Sugiyama, T. Watanabe, T. Suemitsu, V. Ryzhii, K. Iwatsuki, Y. Fukada, J. Kani, J. Terada, N. Yoshimoto, K. Kawahara, H. Ago, and T. Otsuji
  • Title : Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band
  • Journal : Solid-State Electron., Vol. 103, pp. 216-221, Jan. 2015.DOI: 10.1016/j.sse.2014.07.009
  • No. 749
  • Authors : Y. Koseki, A. Satou, V. Ryzhii, V. Vyurkov, and T. Otsuji
  • Title : Damping mechanism of terahertz plamons in graphene on a heavily-doped substrate
  • Journal : ICPS: 32nd Int. Conf. on the Physics of Semiconductors, Carbon: Nanotube & Graphene II, 1205-1220, Austin, TX, USA, 13 Aug. 2014.
  • No. 748
  • Authors : D. Svintsov, V. Ryzhii, A. Satou, T. Otsuji, and V. Vyurkov
  • Title : Carrier-carrier scattering and negative dynamic conductivity in pumped graphene
  • Journal : Opt. Express, Vol. 22, No. 17, pp. 19873-19886, Aug. 2014.DOI: 10.1364/OE.22.019873
  • No. 747
  • Authors : T. Yoshida, M. Oyama, K. Watanabe, Y. Umeda, T. Otsuji, and T. Suemitsu
  • Title : Impact of drain conductance in InGaAs-HEMTs operated in a class-F amplifier
  • Journal : LEC: 2014 Lester Eastman Conference on High Performance Devices Proc., S3-P4, pp. 36-37, Cornell Univ., NY, USA, 7 Aug. 2014.DOI: 10.1109/LEC.2014.6951560
  • No. 746
  • Authors : T. Otsuji, V. Ya Aleshkin, A.A. Dubinov, M. Ryzhii, V. Mitin, M.S. Shur, and V. Ryzhii
  • Title : Terahertz lasing and detection in double-graphene-layer structures
  • Journal : LEC: 2014 Lester Eastman Conference on High Performance Devices Proc., S7-N2, pp. 1-4, Cornell Univ., NY, USA, 7 Aug. 2014.DOI: 10.1109/LEC.2014.6951573
  • No. 745
  • Authors : Kengo Kobayashi, Shinya Hatakeyama, Tomohiro Yoshida, Yuhei Yabe, Daniel Piedra, Tomás Palacios, Taiichi Otsuji, Tetsuya Suemitsu
  • Title : Improved breakdown voltage and RF characteristics in AlGaN/GaN high electron mobility transistors achieved by slant field plates
  • Journal : Appl. Phys. Express, Vol. 7, No. 09, pp. 096501-1-4, Aug. 2014.DOI: 10.7567/APEX.7.096501
  • No. 744
  • Authors : 尾辻泰一
  • Title : グラフェンによるテラヘルツ光発生とレーザーへの応用
  • Journal : 光学, Vol. 48, No. 8, pp. 382-387, Aug. 2014.
  • No. 743
  • Authors : 尾辻泰一
  • Title : グラフェン, オン, シリコンのテラヘルツデバイス応用
  • Journal : 学振将来加工技術第136委員会第3回研究会, 麹町, 東京, 18 July 2014. (invited)
  • No. 742
  • Authors : Kengo Kobayashi, Shinya Hatakeyama, Tomohiro Yoshida, Daniel Piedra, Tomás Palacios, Taiichi Otsuji, Tetsuya Suemitsu
  • Title : Current collapse suppression in AlGaN/GaN HEMTs by means of slant field plates fabricated by multi-layer SiCN
  • Journal : Solid State Electron., Vol. 101, pp. 63-69, Nov. 2014.DOI: 10.1016/j.sse.2014.06.022
  • No. 741
  • Authors : T. Otsuji, A. Satou, S. Boubanga Tombet, V. Ryzhii, V.V. Popov, and M.S. Shur
  • Title : Graphene plasmonic heterostructures for terahertz device applications
  • Journal : 16th Int. Conf. on Laser Optics 2014 Proc., Th-RB-36, St. Pertersburg, Russia, 3 July 2014. (invited)DOI: 10.1109/LO.2014.6886421
  • No. 740
  • Authors : S.A. Boubanga Tombet, Y. Tanimoto, A. Satou, T. Suemitsu, Y. Wang, H. Minamide, H. Ito, D. V. Fateev, V.V. Popov, and T. Otsuji
  • Title : Current-driven detection of terahertz radiation in dual-grating-gate plasmonic detector
  • Journal : Appl. Phys. Lett., Vol. 104, Iss. 26, pp. 262104-1-4, July 2014.DOI: 10.1063/1.4886763
  • No. 739
  • Authors : Y. Kurita, G. Ducournau, D. Coquillat, A. Satou, K. Kobayashi, S.A. Boubanga-Tombet, Y.M. Meziani, V.V. Popov, W. Knap, T. Suemitsu, and T. Otsuji
  • Title : Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics
  • Journal : Appl. Phys. Lett., Vol. 104, Iss. 25, pp. 251114-1-4, June 2014.DOI: 10.1063/1.4885499
  • No. 738
  • Authors : T. Yoshida, K. Kobayashi, T. Otsuji, and T. Suemitsu
  • Title : Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs
  • Journal : Solid State Electron., Vol. 102, pp. 93-97, Dec. 2014.DOI: 10.1016/j.sse.2014.06.005
  • No. 737
  • Authors : T. Otsuji, V.Y. Aleshkin, A.A. Dubinov, M. Ryzhii, V. Mitin, M.S Shur, and V. Ryzhii
  • Title : Terahertz emission and detection in double-graphene-layer structure
  • Journal : DRC: The 72nd Device Research Conference Dig., pp. 159-160, Santa Barbara, CA, USA, 23 June 2014.DOI: 10.1109/DRC.2014.6872346
  • No. 736
  • Authors : T. Watanabe, A. Satou, T. Suemitsu, W. Knap, V.V. Popov, V. Ryzhii, M. Shur, and T. Otsuji
  • Title : Plasmonic terahertz monochromatic coherent emission from an asymmetric chirped dual-grating-gate InP-HEMT with highly asymmetric resonant cavities
  • Journal : RJUS TeraTech-2014: The 3rd Russia-Japan-USA Symp. on Fundamental & Applied Problems of Terahertz Devices & Technologies Proc., S4-IT3, pp. 39-40, Buffalo, NY, USA, 18-20 June 2014. (invited)
  • No. 735
  • Authors : Y. Koseki, A. Satou, V. Ryzhii, V. Vyurkov, and T. Otsuji
  • Title : Damping mechanism of terahertz plasmons in graphene on heavily-doped substrate
  • Journal : RJUS TeraTech-2014: The 3rd Russia-Japan-USA Symp. on Fundamental & Applied Problems of Terahertz Devices & Technologies Proc., P7, pp. 48-50, Buffalo, NY, USA, 18-20 June 2014.
  • No. 734
  • Authors : A. Satou, Y. Kurita, G. Ducournau, D. Coquillat, K. Kobayashi, S. Boubanga Tombet, Y.M. Meziani, V.V. Popov, W. Knap, T. Suemitsu, and T. Otsuji
  • Title : Ultrahigh sensitive sub-terahertz plasmonic detector based on asymmetri ual-grating-gate HEMT
  • Journal : RJUS TeraTech-2014: The 3rd Russia-Japan-USA Symp. on Fundamental & Applied Problems of Terahertz Devices & Technologies Proc., S3-IT1, pp. 21-23, Buffalo, NY, USA, 18-20 June 2014. (invited)
  • No. 733
  • Authors : D. Svintsov, V. Leiman, V.Vyurkov, V. Ryzhii, and T. Otsuji
  • Title : Demodulation of terahertz signals using plasma and mechanical resonances in double graphene layer structures
  • Journal : RJUS TeraTech-2014: The 3rd Russia-Japan-USA Symp. on Fundamental & Applied Problems of Terahertz Devices & Technologies Proc., S2-IT2, pp. 18-19, Buffalo, NY, USA, 18-20 June 2014. (invited)
  • No. 732
  • Authors : T. Otsuji, A. Satou, M. Ryzhii, V. Popov, V. Mitin, and V. Ryzhii
  • Title : Challenges to create graphene terahertz lasers
  • Journal : 2nd Russia-Japan-USA Symposium on the Fundamental and Applied Problems of Terahertz Devices and Technologies, RJUS TeraTech 2013; Moscow; Russian Federation, 3-6 June 2013. (invited) ; J. Phys. Conf. Ser., Vol. 486, Iss. 1, pp. 012007-1-3, 2014.DOI: 10.1088/1742-6596/486/1/012007
  • No. 731
  • Authors : T. Otsuji
  • Title : Recent advances in 2D electronic and plasmonic terahertz devices
  • Journal : RJUS TeraTech-2014: The 3rd Russia-Japan-USA Symp. on Fundamental & Applied Problems of Terahertz Devices & Technologies Proc., (IEEE EDS Distinguished Lecture), PL-1, pp. 11-12, Buffalo, NY, USA, 18-20 June 2014. (invited, public lecture)
  • No. 730
  • Authors : V. Ryzhii, T. Otsuji, V. Ya Aleshkin, A.A. Dubinov, M. Ryzhii, V. Mitin, and M.S. Shur
  • Title : Graphene plasmonic heterostructures for lasing and detection of terahertz radiation
  • Journal : RJUS TeraTech-2014: The 3rd Russia-Japan-USA Symp. on Fundamental & Applied Problems of Terahertz Devices & Technologies Proc., S1-PT1, pp. 8-9, Buffalo, NY, USA, 18-20 June 2014. (plenary, invited)
  • No. 729
  • Authors : T. Kawasaki, T. Watanabe, T. Fukushima, Y. Yabe, S.A. Boubanga Tombet, A. Satou, A.A. Dubinov, V.Y. Aleshkin, V. Mitin, V. Ryzhii, and T. Otsuji
  • Title : Gain enhancement effect of surface plasmon polaritons in optically pumped monolayer graphene
  • Journal : in CLEO: 2014, OSA Technical Digest (online) (Optical Society of America, 2014), paper SF2F.4, San Jose, CA, USA, 13 June 2014.DOI: 10.1364/CLEO_SI.2014.SF2F.4
  • No. 728
  • Authors : Shinya Hatakeyama, Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Tetsuya Suemitsu
  • Title : RF characteristics of AlGaN/GaN HEMTs with slant field plates
  • Journal : ISCS: the 41st Int. Symp. On Compound Semiconductors, Th-C1-6, Montpellier, France, 11-15 May 2014.
  • No. 727
  • Title : W. Knap, D. Coquillat, N. Dyakonova, D. But, T. Otsuji and F. Teppe, "Terahertz Plasma Field Effect Transistors" in Springer Series in Optical Sciences: Physics and Applications of Terahertz Radiation, edited by M. Perenzoni and D. J. Paul, (Springer, Dordrecht, Netherlands, 2014), pp. 77 ‑ 102, DOI: 10.1007/978-94-007-3837-9
  • No. 726
  • Authors : V. Mitin, V. Ryzhii, T. Otsuji, M. Ryzhii, and M. Shur
  • Title : Double graphene-layer structures for adaptive devices
  • Journal : SPIE DSS: 2014 Defense + Security, Conference on "Micro- and Nanotechnology Sensors, Systems, and Applications VI, " Baltimore, MD, USA, May 5-9, 2014. (invited); Proc. SPIE, Vol. 9083, pp. 90830A-1-12, June, 2014.doi:10.1117/12.2050218
  • No. 725
  • Authors : T. Otsuji, T. Watanabe, S. Boubanga Tombet, A. Satou, A.A. Dubinov, V.Ya Aleshkin, V. Mitin, and V. Ryzhii
  • Title : Giant terahertz gain by excitation of surface plasmon polarities in optically pumped graphene
  • Journal : SPIE DSS: 2014 Sensing Technology + Applications, Conference ST105 on Terahertz Physics, Devices, and Systems VIII: Advanced Applications in Industry and Defense, Baltimore, MD, 5 - 9 May 2014. (invited); Proc. SPIE, Vol. 9102, pp. 91020I-1-5, June 2014.doi: 10.1117/12.2055376
  • No. 724
  • Authors : T. Otsuji, A. Satou, S. Boubanga Tombet, A.A. Dubinov, V.V. Popov, V. Ryzhii, and M.S. Shur
  • Title : Graphene active plasmonics for new types of terahertz lasers
  • Journal : Int. J. High Speed Electron. Sys., Vol. 23, Nos. 3 & 4, pp. 1450016-1-17, Nov. 2014.DOI: 10.1142/S0129156414500165
  • No. 723
  • Authors : V. Ryzhii, T. Otsuji, V. Ya Aleshkin, A.A. Dubinov, M. Ryzhii, V. Mitin, and M.S. Shur
  • Title : Voltage-tunable terahertz and infrared photodetectors based on double-graphene-layer structures
  • Journal : Appl. Phys. Lett., vol. 104, pp. 163505-1-4, April 2014.DOI: 10.1063/1.4873114
  • No. 722
  • Authors : 尾辻泰一
  • Title : 半導体プラズモニック集積デバイス技術とそのテラヘルツセンシング応用
  • Journal : IEEE Sendai Section主催 新Fellow 記念講演会, 青葉記念会館, 東北大, 仙台, 16 April 2014. (invited)
  • No. 721
  • Authors : 板津太郎, 佐野栄一, 矢部裕平, 尾辻泰一,
  • Title : テラヘルツ領域における金属メッシュ構造の反射特性
  • Journal : 信学会2014総合大会講演論文集, C-10-5, 新潟, March 18-21, 2014.
  • No. 720
  • Authors : 吉田智洋, 小林健悟, 畠山信也, 尾辻泰一, 末光哲也
  • Title : InGaAs-HEMTにおける寄生遅延時間へのT型ゲート高さの影響
  • Journal : 第61回応用物理学会春季学術講演会講演予稿集, 20a-D8-10, 神奈川, March 17-20, 2014.
  • No. 719
  • Authors : 小林健悟, 畠山信也, 吉田智洋, 矢部裕平, Daniell Piedra, Tomas Palacios, 尾辻泰一, 末光哲也
  • Title : 多層SiCNを用いて作製した傾斜型フィールドプレートによるAlGaN/GaN HEMTにおける電流コラプスの抑制
  • Journal : 第61回応用物理学会春季学術講演会講演予稿集, 19a-D8-9, 神奈川, March 17-20, 2014.
  • No. 718
  • Authors : 畠山信也, 末光哲也, 尾辻泰一, 小林健悟, 吉田智洋
  • Title : InAlN/GaN HEMTsとAlGaN/GaN HEMTsにおける相互コンダクタンスの周波数分散
  • Journal : 第61回応用物理学会春季学術講演会講演予稿集, 18p-PG3-10, 神奈川, March 17-20, 2014.
  • No. 717
  • Authors : 林 広幸, 鷹林 将, 楊 猛, 小川修一, 尾辻泰一, 高桑雄二
  • Title : 光電子制御プラズマCVDによるゲートスタック用DLCの誘電率制御
  • Journal : 第61回応用物理学会春季学術講演会講演予稿集, 18a-D8-1, 神奈川, March 17-20, 2014.
  • No. 716
  • Authors : 小関勇気, 佐藤 昭, Victor Ryzhii, Vladimir Vyurkov, 尾辻泰一
  • Title : グラフェンテラヘルツプラズモンのドープ基板表面プラズモンとの結合による減衰の解析
  • Journal : 第61回応用物理学会春季学術講演会講演予稿集, 17p-E17-19, 神奈川, March 17-20, 2014.
  • No. 715
  • Authors : 若生洋由希, 菅原健太, 栗田裕記, 川﨑鉄哉, 渡辺隆之, 佐藤 昭, ヴィクトール リズィー, 河原憲治, 吾郷浩樹, 尾辻泰一
  • Title : 光学励起グラフェンにおけるテラヘルツ帯増幅自然放出
  • Journal : 第61回応用物理学会春季学術講演会講演予稿集, 17p-E17-18, 神奈川, March 17-20, 2014.
  • No. 714
  • Authors : 菅原健太, 江藤隆紀, 川崎鉄哉, Mastura Hussin, 若生洋由希, 末光哲也, 尾辻泰一, 吾郷浩樹, 河原憲治, 深田陽一, 可児淳一, 寺田 純, 吉本直人
  • Title : グラフェンチャネルFETを用いたミリ波帯フォトミキサー
  • Journal : 第61回応用物理学会春季学術講演会講演予稿集, 17a-E2-53, 神奈川, March 17-20, 2014.
  • No. 713
  • Authors : T. Otsuji, A. Satou, T. Watanabe, A. Dubinov, V. Popov, V. Mitin, and V. Ryzhii
  • Title : Terahertz-wave Generation Using Graphene and Compound Semiconductor Nanoheterostructures
  • Journal : NGC: Int. Symp. on Nano and Giga Challenges in Electronics, Photonics and Renewable Energy, Phoenix, AZ, USA, 10-14 March, 2014. (invited)
  • No. 712
  • Title : W. Knap, D. B. But, N. Dyakonova, D. Coquillat, A. Gutin, O. Klimenko, S. Blin, F. Teppe, M.S. Shur, T. Nagatsuma, S.D. Ganichev, and T. Otsuji, "Recent Results on Broadband Nanotransistor Based THz Detectors" in NATO Science for Peace and Security Series B, Physics and Biophysics: THz and Security Applications, edited by C. Corsi, F. Sizov, (Springer, Dordrecht, Netherlands, 2014) pp.189 – 210, DOI: 10.1007/978-94-017-8828-1
  • No. 711
  • Authors : 尾辻泰一
  • Title : グラフェンの光電子物性とそのテラヘルツレーザー応用
  • Journal : 化学工業 Vol. 65, No. 4, pp. 58-64, March 2014. ISSN 0451-2014
  • No. 710
  • Authors : A. Satou, Y. Koseki, V. Ryzhii, V. Vyurkov, and T. Otsuji
  • Title : Damping mechanism of terahertz plasmons in graphene on heavily doped substrate
  • Journal : J. Appl. Phys., Vol. 115, Iss. 10, pp. 104501-1-7, 2014.DOI: 10.1063/1.4867971
  • No. 709
  • Authors : T. Otsuji, V. Popov, and V. Ryzhii
  • Title : Active graphene plasmonics for terahertz device applications
  • Journal : J. Phys. D., Vol. 47, Iss. 09, pp. 094006-1-10, 2014.DOI: 10.1088/0022-3727/47/9/094006
  • No. 708
  • Authors : D. Svintsov, V. Vyurkov, A. Orlikovsky, V. Ryzhii, and T. Otsuji
  • Title : All-graphene field-effect transistor based on lateral tunnelling
  • Journal : J. Phys. D: Appl. Phys., Vol. 47, Iss. 09, pp. 094002-1-8, 2014.DOI: 10.1088/0022-3727/47/9/094002
  • No. 707
  • Authors : Satou A., Vasko F.T., Otsuji T., Mitin V.V.
  • Title : Transient stimulated emission from multi-split-gated graphene structure
  • Journal : J. Phys. D: Appl. Phys., vol. 47, pp. 055103-1-8, Dec. 2013.DOI: 10.1088/0022-3727/47/5/055103
  • No. 706
  • Authors : T. Otsuji, A. Satou, T. Watanabe, S.A. Boubanga Tombet, A. Dubinov, V. Popov, V. Mitin, and V. Ryzhii
  • Title : Graphene active plasmonics and their applications to terahertz lasers and sensors
  • Journal : SPIE OPTO, Conference on "Quantum Sensing and Nanophotonic Devices XI, " 8993-80; Proc. SPIE, vol. 8993, pp. 899327-1-12, San Francisco, CA, USA, 1 - 6 Feb., 2014.DOI: 10.1117/12.2042328
  • No. 705
  • Authors : A.A. Dubinov, V. Ya. Aleshkin, V. Ryzhii, M.S. Shur, and T. Otsuji
  • Title : Surface-plasmons lasing in double-graphene-layer structures
  • Journal : J. Appl. Phys., Vol. 115, Iss. 04, pp. 044511-1-6, 2014.DOI: 10.1063/1.4863797
  • No. 704
  • Authors : 尾辻
  • Title : 光, 無線融合ネットワークを実現する超高速光電子デバイス技術
  • Journal : 電子情報通信学会マイクロ波フォトニクス研究会, 研技報, Vol. 113, No. 393, pp. 221-226, 京都, Jan. 24, 2014. (invited)
  • No. 703
  • Authors : M. Ryzhii, V. Ryzhii, T. Otsuji, P. P Maltsev, V.G Leiman, N. Ryabova, and V. Mitin
  • Title : Double injection, resonant-tunneling recombination, and current-voltage characteristics in double-graphene-layer structures
  • Journal : J. Appl. Phys., Vol. 115, pp. 024506-1-8, Jan. 2014.DOI: 10.1063/1.4861734
  • No. 702
  • Title : Physics and Applications of Terahertz Radiation, Springer Series in Optical Sciences, M. Perenzoni and D.J. Paul Eds., Vol. 173, Chapt. 3, Terahertz Plasma Field Effect Transistors, W. Knap, D. Coquillat, N. Dyakonova, D. But, T. Otsuji, and F. Teppe, pp. 77-100, Springer, Dordrecht, Dec. 2013. ISBN: 978-94-007-3836-2 (Print) 978-94-007-3837-9 (Online); DOI: 10.1007/978-94-007-3837-9_3.
  • No. 701
  • Authors : D. Svintsov, V. Vyurkov, V. Ryzhii, and T. Otsuji
  • Title : Hydrodynamic electron transport and nonlinear waves in graphene
  • Journal : Phys. Rev. B, Vol. 88, Iss. 24, pp. 245444-1-8, Dec. 2013.DOI: 10.1103/PhysRevB.88.245444
  • No. 700
  • Authors : 尾辻
  • Title : グラフェンテラヘルツレーザーの創出に向けて
  • Journal : 第9回 放射光表面科学研究部会 顕微ナノ材料科学研究会 合同シンポジウム, 仙台, Dec. 26-27, 2013. (invited)
  • No. 699
  • Authors : T. Otsuji, A. Satou, S. Boubanga Tombet, A.A. Dubinov, V.V. Popov, V. Ryzhii, and M.S. Shur
  • Title : Graphene active plasmonics for new types of terahertz lasers
  • Journal : WOFE: Workshop On Frontiers in Electronics, San Juan, Puerto Rico, Dec. 17 - 20 2013. (invited)
  • No. 698
  • Authors : 川崎鉄哉, 畠山信也, 栗田裕記, Guillaume Ducournau, Dominique Coquillat, 小林健悟, 佐藤 昭, Yahya M. Meziani, Vyacheslav. V. Popov, Wojciech Knap, 末光哲也, 尾辻泰一
  • Title : 非対称二重回折格子状ゲート構造HEMTによる超高感度, および周波数選択性テラヘルツ波検出
  • Journal : 信学会電子デバイス研究会, 仙台, Dec. 16-17, 2013; 信学技報, Vol. 113, No. 357, pp. 97-100, Dec. 17, 2013.
  • No. 697
  • Authors : V. Ryzhii, A. Satou, M. Ryzhii, and T. Otsuji
  • Title : Novel concepts and technology for terahertz device applications using graphene
  • Journal : 信学会電子デバイス研究会, 信学技報, vol. 113, no. 357, ED2013-106, pp. 91-96, 仙台, Dec. 16-17, 2013. (invited)
  • No. 696
  • Authors : A.R. Davoyan, M.Y. Morozov, V.V. Popov, A. Satou, and T. Otsuji
  • Title : Graphene surface emitting terahertz laser: Diffusion pumping concept
  • Journal : Appl. Phys. Lett., Vol. 103, Iss. 25, pp. 251102-1-5, 2013.DOI: 10.1063/1.4850522
  • No. 695
  • Authors : V. Ryzhii, A.A. Dubinov, T. Otsuji, V.Ya. Aleshkin, M. Ryzhii, and M. Shur
  • Title : Double-graphene-layer terahertz laser: concept, characteristics, and comparison
  • Journal : Opt. Express, Vol. 21, No. 25, pp. 31567-31577, Dec. 2013.DOI:10.1364/OE.21.031567
  • No. 694
  • Authors : K. Kobayashi, S. Hatakeyama, T. Yoshida, D. Piedrab, T. Palacios, T. Otsuji, and T. Suemitsu
  • Title : Current collapse suppression in AlGaN/GaN HEMTs by Means of Slant Field Plates Fabricated by Multi-layer SiCN
  • Journal : ISDRS: International Semiconductor Device Research Symposium, Bethesda, MD, USA, Dec. 11-13, 2013.
  • No. 693
  • Authors : 尾辻泰一
  • Title : グラフェンの基礎とテラヘルツレーザー応用
  • Journal : 応用物理 Vol. 82, No. 12, pp. 1024-1029, Dec. 2014.
  • No. 692
  • Authors : 尾辻泰一
  • Title : グラフェンの超高周波光電子デバイスへの応用
  • Journal : 2013年真空, 表面科学合同講演会シンポジウム, 28Ca04, つくば, Nov. 27-28, 2013. (invited)
  • No. 691
  • Authors : 林広幸, 楊猛, 鷹林将, 小川修一, 尾辻泰一, 高桑雄二
  • Title : 光電子制御プラズマCVD によるDLC 膜合成機構:タウンゼント放電とグロー放電の比較
  • Journal : 2013年真空, 表面科学合同講演会シンポジウム, 27Ep08, つくば, Nov. 27-28, 2013.
  • No. 690
  • Authors : T. Otsuji, M. Suemitsu, and V. Ryzhii
  • Title : Graphene materials and devices for terahertz science and technology
  • Journal : APMC: Asia-Pacific Microwave Conference Proc., pp. 515-517, F2A-3, Seoul, Korea, Nov. 5-8, 2013. (invited);DOI: 10.1109/APMC.2013.6694849
  • No. 689
  • Authors : T. Otsuji, T. Watanabe, S. Boubanga Tombet, T. Suemitsu, V. Popov, and W. Knap
  • Title : Terahertz emission and detection using two dimensional plasmons in semiconductor nano-heterostructures for sensing applications
  • Journal : Proc. IEEE Sensors Conf., (4pages), Baltimore, Maryland, USA, Nov. 4-6, 2013.DOI: 10.1109/ICSENS.2013.6688150
  • No. 688
  • Authors : R. Jesko, H. Hayashi, S. Ogawa, S. Takabayashi, T. Etoh, Y. Kurita, T. Otsuji and Y. Takakuwa
  • Title : Thermal Stability of Thick DLC Dielectric Films for Graphene-Channel THz Laser Prepared by Photoemission-Assisted Plasma-Enhanced CVD
  • Journal : ACSIN: 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, 7PN-31, Tsukuba, Japan, Nov. 7, 2013.
  • No. 687
  • Authors : S. Takabayashi, H. Hayashi, M. Yang, R. Jesko, S. Ogawa, T. Otsuji and Y. Takakuwa
  • Title : Growth Mechanism Analysis and Precise Control of Electrical and Optical Characteristics of Diamond-Like Carbon Films
  • Journal : ACSIN: 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, 7PN-33, Tsukuba, Japan, Nov.
  • No. 686
  • Authors : S. Takabayashi, H. Hayashi, M. Yang, R. Jesko, R. Shishido, S. Ogawa, T. Otsuji and Y. Takakuwa
  • Title : Formation of a δ-Doped Diamond-Like Carbon Film with a Modulation-doped Gate Dielectric Structure
  • Journal : ACSIN: 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, 7PN-34, Tsukuba, Japan, Nov. 7, 2013.
  • No. 685
  • Authors : T. Otsuji, T. Watanabe, S.A. Boubanga Tombet, A. Satou, V. Ryzhii, V. Popov, and W. Knap
  • Title : Emission and detection of terahertz radiation using two-dimensional plasmons in semiconductor nanoheterostructures for nondestructive evaluations
  • Journal : Opt. Eng., Vol. 53, Iss. 3, pp. 031206-1-13, March 2014.doi: 10.1117/1.OE.53.3.031205
  • No. 684
  • Authors : V.V. Popov, O.V. Polischuk, S.A. Nikitov, V. Ryzhii, T. Otsuji and M.S. Shur
  • Title : Amplification and lasing of terahertz radiation by plasmons in graphene with a planar distributed Bragg resonator
  • Journal : Journal of Optics, Vol. 15, pp. 114009-1-8, Oct. 2013.DOI: 10.1088/2040-8978/15/11/114009
  • No. 683
  • Authors : M. Yang, S. Takabayashi, S. Ogawa, H. Hayashi, R. Jesko, T. Otsuji, and Y. Takakuwa
  • Title : Formation of diamond-like carbon films by photoemission-assisted plasma-enhanced chemical vapor deposition
  • Journal : Jpn. J. Appl. Phys., Vol. 52, pp. 110123-1-11, Oct. 2013.DOI: 10.7567/JJAP.52.110123
  • No. 682
  • Authors : V. Ryzhii, A.A. Dubinov, V.Ya. Aleshkin, M. Ryzhii, and T. Otsuji
  • Title : Injection terahertz laser using the resonant inter-layer radiative transitions in double-graphene-layer structure
  • Journal : Appl. Phys. Lett., Vol. 103, pp. 163507-1-4, Oct. 2013.DOI: 10.1063/1.4826113
  • No. 681
  • Authors : T. Otsuji
  • Title : Graphene active plasmons toward the new types of terahertz lasers
  • Journal : ICECom: 21st International Conference on Applied Electromagnetics and Communications Proc., Dubrovnik, Croatia, October 14-16, 2013. (invited)DOI: 10.1109/ICECom.2013.6684746
  • No. 680
  • Authors : 佐藤 昭, ヴィクトール リズィー, 尾辻 泰一
  • Title : 二次元プラズモンのTHz波デバイス応用
  • Journal : 応用電子物性分科会研究例会, 首都大東京, Oct. 1, 2013.
  • No. 679
  • Authors : Y. Kurita, G. Ducournau, D. Coquillat, K. Kobayashi, A. Satou, Y.M. Meziani, V.V. Popov, W. Knap, T. Suemitsu, and T. Otsuji
  • Title : Ultrahigh sensitive non-resonant and resonant terahertz detection by asymmetric dual-grating gate HEMTs
  • Journal : SSDM: International Conf. on Solid State Devices and Materials, SeaHauk Resort, Fukuoka, Japan, Sept. 26, 2013.
  • No. 678
  • Authors : A. Satou, Y. Kurita, V. Ryzhii, and T. Otsuji
  • Title : Terahertz population inversion in optically pumped graphene: dependence on pumping photon energy
  • Journal : 2013 JSAP-MRS Joint Symposia Symposium C: dvanced Nano Carbon Devices and Materials, 19p-M8-9, Doushisha-Univ., Kyoto, Japan, Sept 19, 2013.
  • No. 677
  • Authors : K. Kojima, T. Fukushima, P. Russel, T. Watanabe, A. Satou, J. Kono, and T. Otsuji
  • Title : Terahertz resonant absorption in graphene micro-ribbon array
  • Journal : 2013 JSAP-MRS Joint Symposia Symposium C: dvanced Nano Carbon Devices and Materials, 19p-M8-10, Doushisha-Univ., Kyoto, Japan, Sept 19, 2013.
  • No. 676
  • Authors : 鷹林, 楊, 林, ラデク, 小川, 尾辻, 高桑
  • Title : 光電子制御プラズマCVD法によるδドープダイヤモンドライクカーボン薄膜の作製
  • Journal : 第74回応用物理学会秋季学術講演会予稿集, 18a-B2-8, 同志社大, 京田辺キャンパス, Sept. 18, 2013.
  • No. 675
  • Authors : 尾辻泰一
  • Title : グラフェンエレクトロニクス
  • Journal : 第74回応用物理学会秋季学術講演会チュートリアル, 同志社大, 京田辺キャンパス, Sept. 16, 2013.
  • No. 674
  • Authors : T. Yoshida, K. Kobayashi, T. Otsuji, and T. Suemitsu
  • Title : Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs
  • Journal : ESSDERC: European Symposium on Solid-state Devices and Circuits Proc., pp. 115-118, Dobrobnik, Croatia, Sept. 16-20, 2013.DOI: 10.1109/ESSDERC.2013.6818832
  • No. 673
  • Authors : T. Kawasaki, A. Dobroiu, T. Eto, Y. Kurita, K. Kojima, Y. Yabe, H. Sugiyama, T. Watanabe, S. Takabayashi, T. Suemitsu, V. Ryzhii, K. Iwatsuki, T. Otsuji, Y. Fukada, J. Kani, J. Terada, and N. Yoshimoto
  • Title : Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band
  • Journal : ESSDERC: European Symposium on Solid-state Devices and Circuits Proc., pp. 318-321, Bucharest, Romania, Sept. 16-20, 2013.DOI: 10.1109/ESSDERC.2013.6818882
  • No. 672
  • Authors : H. Sugiyama, Takayuki Watanabe, Yuki Kurita, Akira Satou, Kenji Kawahara, Hiroki Ago, Victor Ryzhii, Taiichi Otsuji
  • Title : Observation of Spontaneous Terahertz Emission from Optically Pumped Graphene
  • Journal : RPGR2013: Recent Progress on Graphene Research, 12p-P4-35, Tokyo Tech Front, Tokyo, Japan, Sept. 9-13, 2013.
  • No. 671
  • Authors : A. Satou, Y. Koseki, V. Ryzhii, and T. Otsuji
  • Title : Damping of terahertz plasmons in graphene by heavily-doped substrate
  • Journal : RPGR2013: Recent Progress on Graphene Research, 12p-P4-31, Tokyo Tech Front, Tokyo, Japan, Sept. 9-13, 2013.
  • No. 670
  • Authors : T. Kawasaki, T. Eto, K. Kojima, Y. Kurita, Y. Yabe, H. Sugiyama, T. Watanabe, A. Dobroiu, S. Takabayashi, Y. Fukada, J. Kani, J. Terada, N. Yoshimoto, T. Suemitsu, V. Ryzhii, K. Iwatsuki, T. Otsuji
  • Title : Graphene-Channel FETs with DLC gate insulator for Photonic Frequency Double-Mixing Conversion over the Sub-THz Band
  • Journal : RPGR2013: Recent Progress on Graphene Research, 12a-P3-47, Tokyo Tech Front, Tokyo, Japan, Sept. 9-13, 2013.
  • No. 669
  • Authors : V. Ryzhii, A. Satou T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur
  • Title : Concepts of plasmonic terahertz devices based on double-graphene layer structures
  • Journal : RPGR2013: Recent Progress on Graphene Research, 10p-A3-O1, Tokyo Tech Front, Tokyo, Japan, Sept. 9-13, 2013.
  • No. 668
  • Authors : Polischuk, O.V., Popov, V.V., Nikitov, S.A., Ryzhii, V., Otsuji, T., Shur, M.S.
  • Title : Amplification of terahertz radiation by plasmons in graphene with a planar Bragg grating
  • Journal : 6th International Conference on Advanced Optoelectronics and Lasers, CAOL 2013, Proc., pp. 192-194, Sudak, Ukraine, 9-13 Sept. 2013.DOI: 10.1109/CAOL.2013.6657574
  • No. 667
  • Authors : Watanabe, T., Kurita, Y., Satou, A., Suemitsu, T., Knap, W., Popov, V.V., Otsuji, T.
  • Title : Terahertz monochromatic coherent emission from an asymmetric chirped dual-grating-gate InP-HEMT with a photonic vertical cavity
  • Journal : International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, Mainz, Germany, Sept. 1-6, 2013.DOI: 10.1109/IRMMW-THz.2013.6665894
  • No. 666
  • Authors : Coquillat, D., Kurita, Y., Kobayashi, K., Teppe, F., Dyakonova, N., Consejo, C., But, D., Tohme, L., Nouvel, P., Blin, S., Torres, J., Pénarier, A., Otsuji, T., Knap, W.
  • Title : Contribution of the gate leakage current to terahertz detection by asymmetric dual-grating gate HEMT structures
  • Journal : International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, Mainz, Germany, Sept. 1-6, 2013.DOI: 10.1109/IRMMW-THz.2013.6665575
  • No. 665
  • Authors : Popov, V.V., Polischuk, O.V., Davoyan, A.R., Ryzhii, V., Otsuji, T., Shur, M.S.
  • Title : Amplification of terahertz radiation by stimulated emission of plasmons in graphene
  • Journal : International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, Mainz, Germany, Sept. 1-6, 2013.DOI: 10.1109/IRMMW-THz.2013.6665560
  • No. 664
  • Authors : T. Otsuji, T. Watanabe, S. Boubanga Tombet, A. Satou, A.A. Dubinov, V. Popov, and V. Ryzhii
  • Title : Graphene Active Plasmonics for Superradiant Terahertz Lasing
  • Journal : IRMMW-THz: International Conference on Infrared, Millimeter and Terahertz Waves, Mainz, Germany, Sept. 1-6, 2013. (plenary, invited)
  • No. 663
  • Authors : S. Hatakeyama, K. Kobayashi, T. Yoshida, T. Otsuji, and T. Suemitsu
  • Title : Fabrication of slant field plates for AlGaN/GaN HEMTs by multi-layer SiCN
  • Journal : TWHM: Topical Workshop on Heterostructure Microelectronics, Hakodate, Japan, Sept. 2-5, 2013.
  • No. 662
  • Authors : A. Satou, V. Ryzhii, F.T. Vasko, V.V. Mitin, and T. Otsuji
  • Title : Simulation of terahertz plasmons in graphene with grating-gate structures
  • Journal : SISPAD: The International Conference on Simulation of Semiconductor Processes and Devices, P17, Glasgow, Scotland, UK, Sept. 3-5, 2013.
  • No. 661
  • Authors : T. Otsuji, T. Watanabe, S. Boubanga Tombet, V. Popov, and W. Knap
  • Title : Plasmon-resonant terahertz emitters/detectors/modulators and their system applications
  • Journal : TWHM: Topical Workshop on Heterostructure Microelectronics, Hakodate, Japan, Sept. 2-5, 2013. (invited)
  • No. 660
  • Authors : V. Ryzhii
  • Title : Infrared and terahertz devices based on double-graphene-layer structures: Concepts, features, and comparis
  • Journal : , Asian School-Conference on Physics and Technology of Nanostructured Materials Vladivostok, Russia, 20-27 August, 2013. (invited)
  • No. 659
  • Authors : 尾辻
  • Title : グラフェン材料, デバイス技術の最前線と将来展望
  • Journal : TEL Advanced Technology Forum 2013 (東京エレクトロンフォーラム), 東京, Aug. 20, 2013.
  • No. 658
  • Authors : V. Ryzhii, T. Otsuji, A. Satou, M. Ryzhii, V. Mitin, and M.S. Shur
  • Title : Resonant plasmonic terahertz photomixing in double-graphene layer structur
  • Journal : , EDISON: The 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Mo1-4, Matsue, Japan, July 22-26, 2013.
  • No. 657
  • Authors : A. Satou, V. Ryzhii, V.V. Mitin, F.T. Vasko, and T. Otsuji
  • Title : Frequency dispersion and damping mechanisms of terahertz plasmons in graphene transistor structures
  • Journal : EDISON: The 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Mo1-5, Matsue, Japan, July 22-26, 2013; J. Phys. Conf. Ser., vol. 486, pp. 012029-1-, 2014.DOI: 10.1088/1742-6596/486/1/012029
  • No. 656
  • Authors : R. Jesko, M. Yang, H. Hayashi, S. Ogawa, S. Takabayashi, T. Etou, Y. Kurita, T. Otsuji, and T. Takakuwa
  • Title : Deposition of thick dielectric films of diamond-like carbon for graphene-channel THz laser by photoemission-assisted plasma-enhanced CVD
  • Journal : ISSP: the 12th Int. Symp. on Sputtering & Plasma Processes, PI-4, Kyoto, Japan, July 12, 2013.
  • No. 655
  • Authors : V. Ryzhii, A. Satou, T. Otsuji, M. Ryzhii, V. Mitin and M.S. Shur
  • Title : Dynamic effects in double graphene-layer structures with inter-layer resonant-tunneling negative conductivity
  • Journal : J. Phys. D: Appl. Phys., Vol. 46, Iss. 31, pp. 315107-1-6, July 2013.DOI: 10.1088/0022-3727/46/31/315107
  • No. 654
  • Authors : T. Otsuji
  • Title : Graphene plasmons and their applications to terahertz lasers
  • Journal : 32nd Electronic Materials Symposium, Th1-1, Biwa-ko, Shiga, Japan, July 11th, 2013. (invited)
  • No. 653
  • Authors : 尾辻泰一
  • Title : 二次元プラズモンによるテラヘルツ波の発生と検出
  • Journal : 電気学会クラウド時代のユビキタス電子デバイス調査専門委員会, 法政大学, 小金井市, July 6, 2013. (invited)
  • No. 652
  • Authors : T. Watanabe, T. Fukushima, Y. Yabe, S.A. Boubanga Tombet, A. Satou, A.A. Dubinov, V. Ya Aleshkin, V. Mitin, V. Ryzhii, and T. Otsuji
  • Title : The gain enhancement effect of surface plasmon polaritons on terahertz stimulated emission in optically pumped monolayer graphene
  • Journal : New Journal of Physics, Vol. 15, Iss. 7, pp. 075003-1-11, July 2013.DOI:10.1088/1367-2630/15/7/075003
  • No. 651
  • Authors : V. Ryzhii, T. Otsuji, N. Ryabova, M. Ryzhii, V. Mitin, and V. Karasik
  • Title : Concept of infrared photodetector based on graphene-graphene nanoribbon structure
  • Journal : Infrared Phys. Technol., Vol. 59, pp. 137-141, July 2013.DOI: 10.1016/j.infrared.2012.12.028
  • No. 650
  • Authors : H. Fukidome, Y. Kawai, H. Handa, H. Hibino, H. Miyashita, M. Kotsugi, T. Ohkochi, M. Jung, T. Suemitsu, T. Kinoshita, T. Otsuji, and M. Suemitsu
  • Title : Site-selective epitaxy of graphene on Si wafers
  • Journal : Proceedings of the IEEE, Vol. 101, pp. 1557-1566, 2013. (invited)DOI: 10.1109/JPROC.2013.2259131
  • No. 649
  • Authors : M.-H. Jung, G.-H. Park, T. Yoshida, H. Fukidome, T. Suemitsu, T. Otsuji, and M. Suemitsu
  • Title : High-Performance Graphene Field-Effect Transistors with Extremely small access length using self-aligned source and drain technique
  • Journal : Proceedings of the IEEE, Vol. 101, pp. 1603-1608, 2013. (invited)DOI: 10.1109/JPROC.2013.2258651
  • No. 648
  • Authors : V. Ryzhii, I. Semenikhin, M. Ryzhii, D. Svintsov, V. Vyurkov, A. Satou, and T. Otsuji
  • Title : Double injection in graphene p-i-n structures
  • Journal : J. Appl. Phys., Vol. 113, Iss. 24, pp. 244505-1-9, June 2013.DOI: 10.1063/1.4812494
  • No. 647
  • Authors : Y. Fukada, J. Kani, J. Terada, N. Yoshimoto, and T. Otsuji
  • Title : Calibration technique for optical-comb-based frequency-response measurement systems
  • Journal : 2013 18th OptoElectronics and Communications Conference Held Jointly with 2013 International Conference on Photonics in Switching, OECC/PS 2013, ThP1-2, Kyoto, Japan, June 27, 2013.DOI: (none)
  • No. 646
  • Authors : T. Watanabe, T. Fukushima, P.A. Russel, A. Satou, D.M. Mittleman, J. Kono, and T. Otsuji
  • Title : Observation of Terahertz Resonant Absorption in Graphene Micro-Ribbon Arrays
  • Journal : CLEO-PR: 10th Conference on Lasers and Electro-Optics Pacific Rim Tech. Dig., WC4-2, Kyoto, Japan, June 26, 2013.DOI: 10.1109/CLEOPR.2013.6600254
  • No. 645
  • Authors : T. Otsuji, A. Satou, S. Boubanga Tombet, M. Ryzhii, and V. Ryzhii
  • Title : Challenges to create graphene terahertz lasers
  • Journal : CC3DMR: Collaborative Conference on 3D & Materials Research Abstract, p. 659, Jeju, South Korea, June 27, 2013. (invited)
  • No. 644
  • Authors : T. Watanabe, Y. Kurita, A. Satou, T. Suemitsu, W. Knap, V. V. Popov, and T. Otsuji
  • Title : Plasmonic terahertz monochromatic coherent emission from an asymmetric chirped dual-grating-gate InP-HEMT with a photonic vertical cavity
  • Journal : Device Research Conference (DRC), 2013 71st Annual, pp. 129-130, Notre Dame, IN, USA, June 24, 2013.DOI: 10.1109/DRC.2013.6633827
  • No. 643
  • Authors : A. Satou, V. Ryzhii, E.T. Vasko, V.V. Mitin, and T. Otsuji
  • Title : Frequency dispersion and damping mechanisms of terahertz plasmons in graphene transistor structure
  • Journal : CLEO: Conference on Lasers and Electrooptics Dig., JTh2A.33 San Jose, CA, USA, June 13, 2013.
  • No. 642
  • Authors : T. Watanabe, A. Satou, T. Suemitsu, W. Knap. V.V. Popov, and T. Otsuji
  • Title : Plasmonic Terahertz Monochromatic Coherent Emission from an Asymmetric Chirped Dual-Grating-Gate InP-HEMT with a Photonic Vertical Cavities
  • Journal : CLEO: Conference on Lasers and Electrooptics Dig., CW3K.7, San Jose, CA, USA, June 12, 2013.
  • No. 641
  • Authors : T. Otsuji, A. Satou, M. Ryzhii, V. Popov, V. Mitin, and V. Ryzhii
  • Title : Challenge to create graphene terahertz lasers
  • Journal : RJUS-2013: the 2nd Russia-Japan-USA Symposium on the Fundamental and Applied Problems of Terahertz Devices and Technologies, BMSTU, Moscow, Russia, June 3-7, 2013; J. Phys.: Conf. Ser. Vol. 486, pp. 012007-1-3, 2014.DOI: 10.1088/1742-6596/486/1/012007 (invited)
  • No. 640
  • Authors : V. Ryzhii
  • Title : Applied Problems of Terahertz Devices & Technologies
  • Journal : RJUS-2013: the 2nd Russia-Japan-USA Symposium on the Fundamental and Applied Problems of Terahertz Devices and Technologies, BMSTU, Moscow, Russia, June 3-7, 2013. (plenary, invited)
  • No. 639
  • Authors : A. Satou, V. Ryzhii, V.V. Mitin, F.T. Vasko, and T. Otsuji
  • Title : Frequency Dispersion and Damping Mechanisms of Terahertz Plasmons in Graphene Transistor Structures
  • Journal : RJUS-2013: the 2nd Russia-Japan-USA Symposium on the Fundamental and Applied Problems of Terahertz Devices and Technologies, BMSTU, Moscow, Russia, June 3-7, 2013; J. Phys.: Conf. Ser. Vol. 486, pp. 012029-1-3, 2014.DOI: 10.1088/1742-6596/486/1/012029
  • No. 638
  • Authors : D. Svintsov, V. Vyurkov, V. Ryzhii, and T. Otsuji
  • Title : Terahertz and infrared surface plasmon-polaritons in double-graphene layer structures
  • Journal : RJUS-2013: the 2nd Russia-Japan-USA Symposium on the Fundamental and Applied Problems of Terahertz Devices and Technologies, BMSTU, Moscow, Russia, June 3-7, 2013; J. Phys.: Conf. Ser. Vol. 486, pp. 012023-1-2, 2014.DOI: 10.1088/1742-6596/486/1/012023
  • No. 637
  • Authors : V.L. Semenenko, V.G. Leiman, A.V. Srsenin, V. Mitin, M. Ryzhii, T. Otsuji, and V. Ryzhii
  • Title : Self-consistent suface charges and electric field in p-i-n tunneing transit-time diodes based on single- and multiple-layer graphene structures
  • Journal : RJUS-2013: the 2nd Russia-Japan-USA Symposium on the Fundamental and Applied Problems of Terahertz Devices and Technologies, BMSTU, Moscow, Russia, June 3-7, 2013; J. Phys.: Conf. Ser. Vol. 486, pp. 012011-1-2, 2014.DOI: 10.1088/1742-6596/486/1/012011
  • No. 636
  • Authors : M. Ryzhii, M.S. Shur, V. Mitin, A. Satou, V. Ryzhii, and T. Otsuji
  • Title : Plasma Resonant Terahertz Photomixers Based on Double Graphene Layer Structures
  • Journal : RJUS-2013: the 2nd Russia-Japan-USA Symposium on the Fundamental and Applied Problems of Terahertz Devices and Technologies, BMSTU, Moscow, Russia, June 3-7, 2013; J. Phys.: Conf. Ser. Vol. 486, pp. 012032-1-4, 2014.DOI: 10.1088/1742-6596/486/1/012032
  • No. 635
  • Authors : T. Otsuji
  • Title : Active plasmons in grapheme: toward the new types of terahertz lasers
  • Journal : WOCSDICE: 37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe Dig., ED-1, Warnemünde, Germany, May 26-29, 2013. (invited)
  • No. 634
  • Authors : Y. Kurita, G. Ducournau, K. Kobayashi, Y.M. Meziani, V.V. Popov, W. Knap, and T. Otsuji
  • Title : Extremely-High Sensitive Terahertz Detector based on Dual-Grating Gate InP-HEMTs
  • Journal : IPRM: Int. Conf. on Indium Phosphide and Related Materials Proc., ThD1-4, Kobe, Japan, May 23, 2013.DOI: 10.1109/ICIPRM.2013.6562642
  • No. 633
  • Authors : T. Otsuji, T. Watanabe, S. Boubanga Tombet, T. Suemitsu, D. Coquillat, W. Knap. D. Fateev, and V. Popov
  • Title : Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection
  • Journal : IPRM: Int. Conf. on Indium Phosphide and Related Materials Prroc., ThD1-1, Kobe, Japan, May 23, 2013. (invited)DOI: 10.1109/ICIPRM.2013.6562639
  • No. 632
  • Authors : T. Watanabe, A. Satou, T. Suemitsu, W. Knap. V.V. Popov, and T. Otsuji
  • Title : Plasmonic Terahertz Monochromatic Coherent Emission from an Asymmetric Chirped Dual-Grating-Gate InP-HEMT with Highly Asymmetric Resonant Cavities
  • Journal : ISCS: Int. Symp. on Coumpound Semiconductors, TuC4-5, Kobe, Japan, May 21-24, 2013.
  • No. 631
  • Authors : 佐藤昭, V. Ryzhii, V. Mitin, F. Vasko, 尾辻泰一
  • Title : グラフェンにおけるテラヘルツ二次元プラズモンのシミュレーションによる解析
  • Journal : 電子情報通信学会エレクトロニクスシミュレーション研究会(EST), 信学技報, vol. 113, no. 26, EST2013-4, pp. 15-20, May 10, 2013.
  • No. 630
  • Authors : 尾辻泰一
  • Title : グラフェンの光, 電子デバイス応用-技術動向と将来展望-
  • Journal : エレクトロニクスシミュレーション, テラヘルツ応用システムワークショップ, 厚木, May 9, 2013. (invited)
  • No. 629
  • Authors : 佐藤昭
  • Title : グラフェンを用いたTHz波素子応用
  • Journal : 日本表面科学会 第77回表面科学研究会 日本真空学会 2013年5月研究例会 「グラフェン応用実用デバイス研究の現状と課題」, 機械振興会館, 東京, May 9, 2013. (invited)
  • No. 628
  • Authors : V. Ryzhii, M. Ryzhii, V. Mitin, M.S. Shur, A. Satou, and T. Otsuji
  • Title : Terahertz photomixing using plasma resonances in double-graphene layer structures
  • Journal : J. Appl. Phys., Vol. 113, Iss. 17, pp. 174506-1-7, May 2013.DOI: 10.1063/1.4804063
  • No. 627
  • Authors : T. Otsuji, T. Watanabe, S. Satou, V. Popov, and V. Ryzhii
  • Title : Graphene active plasmonic metamaterials for new types of terahertz lasers
  • Journal : SPIE-DSS: SPIE Conf. on Defense, Security+Sensing, DS203 Conf. on "Terahertz Physics, Devices, and Systems VII: Advance Application in Industry and Defense, " 8716-24, Baltimore, MD, USA, April 29 - May 3, 2013. (invited); Proc. SPIE, vol. 8716, pp. 87160P-1-12, May 2013.DOI: 10.1117/12.2019717
  • No. 626
  • Authors : T. Otsuji, T. Watanabe, S. Boubanga Tombet, A. Satou, V. Ryzhii, V. Popov, and W. Knap
  • Title : Emission and detection of terahertz radiation using two dimensional plasmons in semiconductor nano-heterostructures for nondestructive evaluations
  • Journal : SPIE-DSS: SPIE Conf. on Defense, Security+Sensing, DS109 Conf. on "Multifunctional and Adaptive Structural Materials, " 8725-13, Baltimore, MD, USA, April 29 - May 3, 2013. (invited); Proc. SPIE, vol. 8725, pp. 87250F-1-16, May 2013.DOI: 10.1117/12.2015089
  • No. 625
  • Authors : T. Watanabe, Y. Kurita, S. Boubanga Tombet, T. Suemitsu, T. Otsuji, D. Coquillat, W. Knap, D. Fateev, V.V. Popov, H. Minamide, H. Ito, and Y. Meziani
  • Title : Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection
  • Journal : GSMM: 6th Global Symposium on Millimeter-Waves, M4-6, Sendai, Japan, April 22, 2013.
  • No. 624
  • Authors : A. Satou, V. Ryzhii, T. Otsuji, M. Ryzhii, V. Mitin, and M.S. Shur
  • Title : Graphene terahertz lasers: injection versus optical pumping
  • Journal : GSMM: 6th Global Symposium on Millimeter-Waves, M4-5, Sendai, Japan, April 22, 2013.
  • No. 623
  • Authors : D. Svintsov, V. Vyurkov, A. Orlikovsky, V. Ryzhii, and T. Otsuji
  • Title : All-Graphene Tunnel Field-Effect Transistor
  • Journal : the 7th International Workshop on "Functional Nanomaterials and Devices" and Second Ukrainian-French Seminar "Semiconductor-On-Insulator materials, devices and circuit technology and diagnostics, " Kiev, Ukraine, 8-11 April 2013.
  • No. 622
  • Authors : A. Satou, V. Ryzhii, Y. Kurita, and T. Otsuji
  • Title : Threshold of terahertz population inversion and negative dynamic conductivity in graphene under pulse photoexcitation
  • Journal : J. Appl. Phys., Vol. 113, Iss. 14, pp. 143108-1-7, April 2013.DOI: 10.1063/1.4801916
  • No. 621
  • Authors : T. Otsuji, A. Satou, S.A. Boubanga Tombet, M. Ryzhii, V. Ryzhii
  • Title : Terahertz-wave generation using graphene -toward the creation of graphene injection lasers
  • Journal : OTST: International Conference on Optical Terahertz Science and Technology, F1B-1, Kyoto, Japan, April 1-5, 2013. (invited)
  • No. 620
  • Authors : Y. Kurita, G. Ducournau, K. Kobayashi, Y. Meziani, V. Popov, W. Knap, and T. Otsuji
  • Title : Ultrahigh sensitive terahertz detection by asymmetric dual-grating gate HEMT structure
  • Journal : OTST: International Conference on Optical Terahertz Science and Technology, F2B-3, Kyoto, Japan, April 5, 2013.
  • No. 619
  • Authors : T. Watanabe, A. Satou, T. Suemitsu, W. Knap, V. Popov and T. Otsuji
  • Title : Plasmonic terahertz monochromatic coherent emission from an asymmetric chirped dual-grating-gate InAlAs/InGaAs/InP HEMT with highly asymmetric resonant cavities
  • Journal : OTST: International Conference on Optical Terahertz Science and Technology, Th3-26, Kyoto, Japan, April 4, 2013.
  • No. 618
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V. Mitin and M.S. Shur
  • Title : Terahertz detectors and photomixers based on double-graphene-layer structures utilizing plasma resonances
  • Journal : OTST: International Conference on Optical Terahertz Science and Technology, Th3-04, Kyoto, Japan, April 4, 2013.
  • No. 617
  • Authors : D. Coquillat, Y. Kurita, K. Kobayashi, F. Teppe, N. Dyakonova, D. But, L. Tohme, P. Nouvel, St. Blin, J. Torres, A. Pénarier, T. Otsuji and W. Knap
  • Title : Sub-threshold attenuation of terahertz detection by asymmetric dual-grating gate HEMT structures
  • Journal : OTST: International Conference on Optical Terahertz Science and Technology, W4-15, Kyoto, Japan, April 3, 2013.
  • No. 616
  • Authors : G. Ducournau, Y. Kurita, K. Kobayashi, Y. Zapart, J.-F. Lampin, and T. Otsuji
  • Title : Sub-THz scalar/vector imaging for objects inspection
  • Journal : OTST: International Conference on Optical Terahertz Science and Technology, W4-10, Kyoto, Japan, April 3, 2013.
  • No. 615
  • Authors : Akira Satou, Yuuki Kurita, Taiichi Otsuji and Victor Ryzhii
  • Title : Terahertz population inversion and negative dynamic conductivity in optically pumped graphene: dependence on pumping photon energy
  • Journal : OTST: International Conference on Optical Terahertz Science and Technology, W3B-6, Kyoto, Japan, April 2, 2013.
  • No. 614
  • Authors : 尾辻泰一
  • Title : グラフェンの超高周波光, 電子デバイス
  • Journal : 材料の科学と工学, Vol. 50, No. 2, pp. 44-49, April 2014.
  • No. 613
  • Authors : 吉田智洋, 小林健悟, 尾辻泰一, 末光哲也
  • Title : 多層SiCN鋳型による50nm級T型ゲートInGaAsHEMTの作製
  • Journal : 第60回応用物理学会春季学術講演会, 29p-D1-11, 厚木, 神奈川, March 29, 2013.
  • No. 612
  • Authors : 佐藤昭, ヴィクトール リズィー, ウラジミール ミチン, フェデール バスコ, 尾辻泰一
  • Title : グラフェンにおけるテラヘルツ二次元プラズモンの周波数分散および減衰機構
  • Journal : 第60回応用物理学会春季学術講演会, 29p-D1-6, 厚木, 神奈川, March 29, 2013.
  • No. 611
  • Authors : 福嶋哲也, Paul Russel, 渡辺隆之, 佐藤昭, 河野淳一郎, 尾辻泰一
  • Title : グラフェンリボン格子におけるテラヘルツ波共鳴吸収の観測
  • Journal : 第60回応用物理学会春季学術講演会, 29p-D1-11, 厚木, 神奈川, March 29, 2013.
  • No. 610
  • Authors : 栗田裕記, 谷本雄大, 福嶋哲也, 渡辺隆之, Stephane Boubanga-Tombet, Dominique Coquillat, Wojciech Knap, Vyacheslav Popov, 尾辻泰一
  • Title : 非対称二重回折格子状ゲート構造HEMT による低温環境でのテラヘルツ波検出
  • Journal : 第60回応用物理学会春季学術講演会, 28p-D1-8, 厚木, 神奈川, March 28, 2013.
  • No. 609
  • Authors : 渡辺隆之, 福嶋哲也, 栗田裕記, 佐藤昭, 末光哲也, 尾辻泰一
  • Title : 非対称二重格子状ゲート構造を導入した縦型共振器 HEMT からの単色テラヘルツコヒーレント放射
  • Journal : 第60回応用物理学会春季学術講演会, 28p-D1-9, 厚木, 神奈川, March 28, 2013.
  • No. 608
  • Authors : T. Otsuji
  • Title : Stimulated Terahertz Photons and Plasmons Emission from Compound Semiconductors and Graphene
  • Journal : 7th Terahertz Days and GDR‐I Workshop, M4-1 (1page), Cargèse, Corsica, France, March 25th‐27th, 2013. (invited)
  • No. 607
  • Authors : 小林健悟, 吉田智洋, 畠山信也, 尾辻泰一, 末光哲也
  • Title : 多層SiCN絶縁膜によるAlGaN/GaN HEMT用傾斜フィールドプレートの形成
  • Journal : 電子情報通信学会2013年総合大会, C-10-7, 岐阜, March 20, 2013.
  • No. 606
  • Authors : 尾辻泰一, 佐藤 昭, マキシム リズィー, 佐野栄一, 末光眞希, ヴィクトール リズィー
  • Title : グラフェンテラヘルツレーザーとフォトニックデバイス応用の可能性
  • Journal : 電子情報通信学会2013年総合大会, CI-1-3, 岐阜, March 19, 2013. (invited)
  • No. 605
  • Authors : T. Otsuji, M. Ryzhii, and V. Ryzhii
  • Title : Challenges to create graphene-based terahertz and infrared lasers
  • Journal : Graphene Nanophotonics, M06-1535h, Benasque, Spain, March 3-8, 2013. (invited)
  • No. 604
  • Authors : T. Eto, S. Takabayashi, Y. Kurita, M. Yang, H. Hayashi, R. Jesko, S. Ogawa, Y. Takakuwa, T. Suemitsu, and T. Otsuji
  • Title : Graphene-channel FET with δ-doped diamondlike carbon top-gate dielectrics
  • Journal : The 9th International Thin-Film Transistor Conference, 1pAO06, March 1-2, 2013.
  • No. 603
  • Authors : D. Svintsov, V. Vyurkov, V. Ryzhii, and T. Otsuji
  • Title : Voltage-controlled surface plasmon-polaritons in double graphene layer structures
  • Journal : J. Appl. Phys., Vol. 113, pp. 053701-1-5, Feb. 2013.DOI: 10.1063/1.4789818
  • No. 602
  • Authors : A. Satou, V. Ryzhii, F.T. Vasko, V.V. Mitin, T. Otsuji
  • Title : Numerical simulation of terahertz plasmons in gated graphene structures
  • Journal : Proc. of SPIE (SPIE Photonics West, 8624-37, San Francisco, CA, Feb. 6, 2013.) Vol. 8624, pp. 862412-1-8, Feb. 2013.doi: 10.1117/12.2003611
  • No. 601
  • Authors : 尾辻泰一
  • Title : グラフェンによるテラへルツレーザ
  • Journal : OPTRONICS, Vol. 32, No. 374, pp. 75-79, Feb. 2013. ISSN 0286-9659
  • No. 600
  • Authors : T. Otsuji, T. Watanabe, S. Boubanga Tombet, A. Satou, W. Knap, V. Popov, M. Ryzhii, and V. Ryzhii
  • Title : Emission and detection of terahertz radiation using two-dimensional electrons in III-V semiconductors and graphene
  • Journal : IEEE Trans. Terahertz Sci. Technol., Vol. 3, No. 1, pp. 63-71, Jan. 2013.doi: 10.1109/TTHZ.2012.2235911
  • No. 599
  • Authors : 江藤 隆紀, 鷹林 将, 栗田 裕記, 楊 猛, 林 広幸, イェシコ ラディック, 小川 修一, 高桑 雄二, 末光 哲也, 尾辻 泰一
  • Title : テラヘルツ通信を志向したダイヤモンドライクカーボンゲート絶縁膜を有するグラフェンFET
  • Journal : ゲートスタック研究会 第18回研究会研究報告, pp. 47-50, 湯河原, 静岡, Jan. 25, 2013.
  • No. 598
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, N. Ryabova, S.O. Yurchenko, V. Mitin, and M.S. Shur
  • Title : Graphene terahertz uncooled bolometers
  • Journal : J. Phys. D: Appl. Phys., Vol. 46, pp. 065102-1-5, Jan. 2013.DOI:10.1088/0022-3727/46/6/065102
  • No. 597
  • Authors : T. Yoshida, K. Kobayashi, T. Otsuji, and T. Suemitsu
  • Title : InGaAs HEMTs with T-gate electrodes formed by multi-layer SiCN molds
  • Journal : Physica Status Solidi C, Vol. 10, No. 5, pp. 773-776, Feb. 2013.doi: 10.1002/pssc.201200610
  • No. 596
  • Authors : K. Kobayashi, M. Kano, T. Yoshida, R. Katayama, T. Matsuoka, T. Otsuji, and T. Suemitsu
  • Title : AlGaN/GaN MIS- gate HEMTs with SiCN gate stacks
  • Journal : Phys. Status Solidi C, Vol. 10, No. 5, pp. 790-793, Feb. 2013.doi: 10.1002/pssc.201200609
  • No. 595
  • Authors : V. L. Semenenko, V. G. Leiman, A. V. Arsenin, V. Mitin, M. Ryzhii, T. Otsuji, and V Ryzhii
  • Title : Effect of self-consistent electric field on characteristics of graphene p-i-n tunneling transit-time diodes
  • Journal : J. Appl. Phys., Vol. 113, pp. 024503-1-7, Jan. 2013.DOI: 10.1063/1.4773836
  • No. 594
  • Authors : T. Watanabe, S. Boubanga Tombet, Y. Tanimoto, D. Fateev, V. Popov, D. Coquillat, W. Knap, Y. Meziani, Y. Wang, H. Minamide, H. Ito, and T. Otsuji
  • Title : InP- and GaAs-based plasmonic high-electron-mobility transistors for room-temperature ultrahigh-sensitive terahertz sensing and imaging
  • Journal : IEEE Sensors J., Vol. 13, No. 1, pp. 89-99, Jan. 2013.doi: 10.1109/JSEN.2012.2225831
  • No. 593
  • Authors : T. Otsuji, S. Boubanga Tombet, A. Satou, M. Ryzhii, and V. Ryzhii
  • Title : Terahertz-wave generation using graphene: toward new types of terahertz lasers
  • Journal : IEEE J. Selected Topics in Quantum Electron., Vol. 19, Iss. 1, pp. 8400209-1-9, Jan.-Feb. 2013. (invited)doi: 10.1109/JSTQE.2012.2208734
  • No. 592
  • Authors : Y. Kurita, A. Satou, T. Watanabe, T. Fukushima, S. Boubanga Tombet, S. Chan, V. Ryzhii, and T. Otsuji
  • Title : Dependency of negative dynamic conductivity on momentum relaxation time in optically pumped graphene
  • Journal : FTT: Frontiers in Terahertz Technology, P1.15, Nara, Dec. 26-30, 2012.
  • No. 591
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, and M.S. Shur
  • Title : Terahertz detector utilizing plasma resonances in double graphene layer tunneling heterostructure
  • Journal : FTT: Frontiers in Terahertz Technology, P1.28, Nara, Dec. 26-30, 2012.
  • No. 590
  • Authors : F.T. Vasko, V.V. Mitin, V. Ryzhii, and T. Otsuji
  • Title : Interplay of intra- and interband absorption in a disordered graphene
  • Journal : Phys. Rev. B, Vol. 86, iss. 23, pp. 235424-1-7, Dec. 2012.DOI: 10.1103/PhysRevB.86.235424
  • No. 589
  • Authors : K. Kojima, M. Ryzhii, V. Mitin, A. Satou, V. Ryzhii, and T. Otsuji
  • Title : Study on THz negative dynamic conductivity in optically pumped graphene
  • Journal : TeraNano III: 3rd Int'l Symp. on Terahertz Nanoscience, P.9, Honolulu, Hawaii, Dec. 10-12, 2012.
  • No. 588
  • Authors : Y. Kurita, A. Satou, T. Watanabe, T. Fukushima, V. Ryzhii, and T. Otsuji
  • Title : THz population inversion in graphene under pulse excitation: dependence on pumping photon energy
  • Journal : TeraNano III: 3rd Int'l Symp. on Terahertz Nanoscience, P.12, Honolulu, Hawaii, Dec. 10-12, 2012.
  • No. 587
  • Authors : Y. Yabe, T. Fukushima, T. Watanabe, A. Satou, and T. Otsuji
  • Title : Measurement of the field distribution of THz photon echo pulses in an electro-optic crystal
  • Journal : TeraNano III: 3rd Int'l Symp. on Terahertz Nanoscience, P.22, Honolulu, Hawaii, Dec. 10-12, 2012.
  • No. 586
  • Authors : A. Satou, T. Otsuji, F.T. Vasko, V.V. Mitin, and V. Ryzhii
  • Title : Numerical study of plasmons in gated graphene structures
  • Journal : TeraNano III: 3rd Int'l Symp. on Terahertz Nanoscience, Honolulu, Hawaii, Dec. 10-12, 2012.
  • No. 585
  • Authors : V. Mitin, F. T. Vasko, V. Ryzhii, and T. Otsuji
  • Title : Distinctiveness of nonequilibrium carriers in disordered graphene
  • Journal : TeraNano III: 3rd Int'l Symp. on Terahertz Nanoscience, S2-3, Honolulu, Hawaii, Dec. 10-12, 2012.
  • No. 584
  • Authors : 尾辻泰一
  • Title : グラフェンを用いたテラヘルツ波の発生とその応用
  • Journal : 第126回微小光学研究会 「微小光学の周期表 -元素を見直す-」, 早稲田, 東京, Dec. 7, 2012. (invited)
  • No. 583
  • Authors : T. Otsuji, S. A. Boubanga Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhii, and V. Ryzhii
  • Title : Graphene materials and devices in terahertz science and technology
  • Journal : MRS Bulletin, Vol. 37, No. 12, pp. 1235-1243, Dec. 2012. (invited)doi: 10.1557/mrs.2012.241
  • No. 582
  • Authors : D. But, N. Dyakonova, D. Coquillat, F. Teppe, W. Knap, T. Watanabe, Y. Tanimoto, S. Boubanga Tombet and T. Otsuji
  • Title : THz double-grating gate transistor detectors in hiigh magnetic fields
  • Journal : Acta Physica Polonica A, Vol. 122, No. 6, pp. 1080-1082, Dec. 2012.DOI:
  • No. 581
  • Authors : V.V. Popov, O.V. Polischuk, A.R. Davoyan, V. Ryzhii, T. Otsuji, and M.S. Shur
  • Title : Plasmonic terahertz lasing in an array of graphene nanocavities
  • Journal : Phys. Rev. B, Vol. 86, iss. 19, pp. 195437-1-6, Nov. 2012.doi: 10.1103/PhysRevB.86.195437
  • No. 580
  • Authors : Polischuk O.V., Popov V.V., Davoyan A.R., Ryzhii V., Otsuji T., Shur M.S.
  • Title : Giant enhancement of terahertz radiation by stimulated generation of plasmons in a planar array of graphene microcavities
  • Journal : Frontiers in Optics 2012/Laser Science XXVIII OSA Tech. Dig. paper FW1E.4, Rochester, NY, USA, 14–18 October 2012.DOI: 10.1364/FIO.2012.FW1E.4
  • No. 579
  • Authors : T. Otsuji, A. Satou, M. Ryzhii, V. Mitin, and V. Ryzhii
  • Title : Graphene terahertz lasers -current injection versus optical pumping
  • Journal : MRS Fall Meeting, W9.03, Boston, Nov. 28, 2012. (MRS Proc. Vol. 1505, 2013.) (invited)doi: 10.1557/opl.2013.523
  • No. 578
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V. G. Leiman, S. O. Yurchenko, V. Mitin, and M. S. Shur
  • Title : Effect of plasma resonances on dynamic characteristics of double graphene-layer optical modulator
  • Journal : J. Appl. Phys., Vol. 112, Issue 10, pp. 104507-1-7, Nov. 2012.doi: 10.1063/1.4766814
  • No. 577
  • Authors : G.H. Park, M.H. Jung, H. Fukidome, T. Suemitsu, T. Otsuji, M. Suemitsu
  • Title : Oxygen-plasma formation of alumina for a gate dielectric in graphene field effect transistors
  • Journal : ISGD: International Symposium on Graphene Devices, PO-18, Soleil, France, Nov. 5, 2012.
  • No. 576
  • Authors : M. Yang, S. Takabayashi, S. Ogawa, H. Hayashi, T. Eto, T. Otsuji, and Y. Takakuwa
  • Title : Dielectric-tuning of diamondlike carbon gate dielectrics prepared by photoemission-assisted plasma-enhanced chemical vapor deposition
  • Journal : ISGD: International Symposium on Graphene Devices, PO-27, Soleil, France, Nov. 5, 2012.
  • No. 575
  • Authors : D. Svintsov, I. Semenikhin, V. Vyurkov, V. Ryzhii, and T. Otsuji
  • Title : Voltage-controlled surface plasmon-polaritons in double graphene structures
  • Journal : ISGD: International Symposium on Graphene Devices, PO-22, Soleil, France, Nov. 5, 2012.
  • No. 574
  • Authors : V. Vyurkov, D. Svintsov, A. Orlikovsky, V. Ryzhii, and T. Otsuji
  • Title : Tunnel graphene field-effect transistor
  • Journal : ISGD: International Symposium on Graphene Devices, OC-07, Soleil, France, Nov. 5-9, 2012.
  • No. 573
  • Authors : S. Takabayashi, M. Yang, T. Eto, H. Hayashi, S. Ogawa, Y. Takakuwa, T. Suemitsu, and T. Otsuji
  • Title : Carrier remote doping effect in graphene-channel FET’s with diamondlike carbon gate dielectrics
  • Journal : ISGD: International Symposium on Graphene Devices, OC-14, Soleil, France, Nov. 5, 2012.
  • No. 572
  • Authors : T. Otsuji, A. Satou, M. Ryzhii, and V. Ryzhii
  • Title : Terahertz-wave generation using graphene towards new types of terahertz lasers
  • Journal : ISGD: International Symposium on Graphene Devices, IT-08, Soleil, France, Nov. 5, 2012. (invited).
  • No. 571
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V. Mitin, and M. S. Shur
  • Title : Plasmonic effects in double graphene-layer optical modulators and terahertz detectors
  • Journal : ISGD: International Symposium on Graphene Devices, IT-09, Soleil, France, Nov. 5, 2012. (invited).
  • No. 570
  • Authors : V. Mitin, F. T. Vasko, V. Ryzhii, and T. Otsuji
  • Title : Interplay of intraband and interband absorption in a disordered graphene
  • Journal : ISGD: International Symposium on Graphene Devices, OC-05, Soleil, France, Nov. 5, 2012.
  • No. 569
  • Authors : W. Knap, D. Coquillat, S. Blin, F. Teppe, D. But, T. Otsuji, and T. Nagatsuma
  • Title : Terahetz field effect transistors: basic physics and applications for detection of explosives and secure wireless communication
  • Journal : NATO Advanced Research Workshop on Detection of Explosives and CBRN (Using Terahertz), Cesme, Izmir, Turkey, 3-6 November 2012. (invited)
  • No. 568
  • Authors : T. Otsuji
  • Title : Terahertz-wave generation using graphene -toward new types of terahertz lasers
  • Journal : Technical University of Dresden and Tohoku University Symposium 2012 on "Ultra High Speed Wireless Communications Technologies", Sakura Hall, Tohoku University, Sendai, Nov. 2, 2012. (invited).
  • No. 567
  • Authors : A. Satou, H. Shida, T. Otsuji, and V.V. Popov
  • Title : Theoretical study of terahertz plasma instability in asymmetric double-grating gate transistor structures
  • Journal : ICMNE: Int. Conf. on Micro and Nanoelectronics, O1-05, Moscow, Russia, Oct. 1-5, 2012.
  • No. 566
  • Authors : D. Svintsov, I. Semenikhin, V. Vyurkov, V. Ryzhii, T. Otsuji
  • Title : Voltage-controlled surface plasmon-polaritons in double-graphene structures
  • Journal : ICMNE: Int. Conf. on Micro and Nanoelectronics, O1-06, Moscow, Russia, Oct. 1-5, 2012.
  • No. 565
  • Authors : T. Watanabe, T. Fukushima, Y. Kurita, A. Satou, T. Otsuji
  • Title : Instability-driven terahertz emission and injection locking behavior in an asymmetric dual-grating-gate HEMT with a vertical cavity structure
  • Journal : ICMNE: Int. Conf. on Micro and Nanoelectronics, P1-43, Moscow, Russia, Oct. 1-5, 2012.
  • No. 564
  • Authors : T. Otsuji, A. Satou, S.A. Boubanga Tombet, M. Ryzhii, V. Ryzhii
  • Title : Terahertz-wave generation using graphene -towards the creation of graphene injection lasers
  • Journal : ICMNE: Int. Conf. on Micro and Nanoelectronics, L2-02, Lipki, Zvenigorod in Moscow, Russia, Oct. 1-5, 2012. (invited)
  • No. 563
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V. Mitin, M.S. Shur
  • Title : Graphene-based infrared and terahertz detectors: Concepts, features, and comparison
  • Journal : ICMNE: Int. Conf. on Micro and Nanoelectronics, L2-01, Moscow, Russia, Oct. 1-5, 2012. (invited)
  • No. 562
  • Authors : S. Boubanga Tombet, Y. Tanimoto, T. Watanabe, T. Suemitsu, Y. Wang, H. Minamide, H. Ito, V. Popov, and T. Otsuji
  • Title : Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection
  • Journal : IRMMW-THz, Int. Conf. on Infrared, Millimeter, and Terahertz Waves, Thu-A-5-3 (2 pages), Wollongong, Austraria, Sept. 23-29, 2012.
  • No. 561
  • Authors : But D., Dyakonova N., Coquillat D., Teppe F., Knap W., Watanabe T., Tanimoto Y., Boubanga Tombet S., Otsuji T.
  • Title : Terahertz radiation detection by double grating-gate transistors in high magnetic fields
  • Journal : IRMMW-THz, Int. Conf. on Infrared, Millimeter, and Terahertz Waves, (2 pages), Wollongong, Austraria, Sept. 23-29, 2012.DOI: 10.1109/IRMMW-THz.2012.6380135
  • No. 560
  • Authors : V. Ryzhii, d T. Otsuji
  • Title : Concepts of graphene terahertz and infrared devices
  • Journal : NewMARE: International School on New Materials and Renewable Energy, INV-4, Tbilisi, Georgia, Sept. 19-23, 2012. (invited)
  • No. 559
  • Authors : T. Otsuji, A. Satou, M. Ryzhii, V. Mitin, and V. Ryzhii
  • Title : Terahertz-wave generation using graphene -towards new types of terahertz lasers
  • Journal : NanoSmat Conf., Special Session on "Graphene and other novel two-dimensional nanostructures," Prague, Czech Republic, Sept. 18-21, 2012. (invited)
  • No. 558
  • Authors : 江藤隆紀, 鷹林将, 三本菅正太, 猪俣州哉, 吹留博一, 末光眞希, 末光哲也, 尾辻泰一
  • Title : グラフェン/SiC/SiバックゲートFET特性とSiC層厚の関係
  • Journal : 13p-C2-8, 松山, 愛媛, Sept. 13, 2012.
  • No. 557
  • Authors : 栗田裕記, 渡辺隆之, 福嶋哲也, Stephane Boubanga-Tombet, Silvia Chan, 佐藤昭, Victor Ryzhii, 尾辻泰一
  • Title : 光学励起グラフェンにおける負性導電率の運動量緩和時間依存性
  • Journal : 第73回応用物理学会学術講演会, 12a-B1-9, 松山, 愛媛, Sept. 12, 2012.
  • No. 556
  • Authors : 福嶋哲也, 渡辺隆之, 佐藤 昭, 尾辻泰一
  • Title : 電気光学結晶内テラヘルツパルスの空間電界分布の測定
  • Journal : 第73回応用物理学会学術講演会, 12a-B1-8, 松山, 愛媛, Sept. 12, 2012.
  • No. 555
  • Authors : 矢部裕平, 渡辺隆之, Svintsov Dmitry, Vyurkov Vladimir, Yurchenko Stanislav, Ryzhii Victor, 尾辻泰一
  • Title : ゲート制御グラフェン内プラズマ波の分散, 減衰特性に関する考察
  • Journal : 第73回応用物理学会学術講演会, 11p-B1-9, 松山, 愛媛, Sept. 11, 2012.
  • No. 554
  • Authors : 小嶋一輝, Maxim Ryzhii, Mitin Vladimir, 佐藤昭, Victor Ryzhii, 尾辻泰一
  • Title : 光学励起グラフェンにおけるテラヘルツ帯負性導電率特性の考察
  • Journal : 第73回応用物理学会学術講演会, 11p-B1-7, 松山, 愛媛, Sept. 11, 2012.
  • No. 553
  • Authors : 小林健悟, 吉田智洋, 尾辻泰一, 片山竜二, 松岡隆志, 末光哲也
  • Title : AlGaN/GaN MISゲートHEMT形成におけるH2アニールの効果
  • Journal : 第73回応用物理学会学術講演会, 11a-PA5-9, 松山, 愛媛, Sept. 11-14, 2012.
  • No. 552
  • Authors : 吉田智洋, 佐藤 昭, 尾辻泰一, 末光哲也
  • Title : InGaAs系HEMTにおけるT型ゲート形状の静電場解析
  • Journal : 第73回応用物理学会学術講演会, 11a-PA5-4, 松山, 愛媛, Sept. 11-14, 2012.
  • No. 551
  • Authors : T. Otsuji
  • Title : Toward the creation of graphene terahertz lasers
  • Journal : FNTG: Fullerenes-Nanotubes-Graphene General Symposium Abstracts, p. 3, Sendai, Japan, Sept. 5-7, 2012. (invited)
  • No. 550
  • Authors : 尾辻泰一
  • Title : グラフェンの光, 電子デバイスへの応用
  • Journal : 炭素材料学会セミナー, 連合会館, 東京, Sept. 4, 2012. (invited)
  • No. 549
  • Authors : K. Kobayashia, M. Kanoa, T. Yoshidaa, R. Katayamab, T . Matsuokab, T. Otsujia, T. Suemitsu
  • Title : AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks
  • Journal : ISCS: Int. Symp. Compound Semicond., UCSB, CA, USA, Aug. 27-29, 2012.
  • No. 548
  • Authors : T. Yoshida, K. Kobayashi, T. Otsuji, and T. Suemitsu
  • Title : InGaAs HEMTs with T-gate electrodes formed by multi-layer SiCN molds
  • Journal : ISCS: Int. Symp. Compound Semicond., UCSB, CA, USA, Aug. 27-29, 2012.
  • No. 547
  • Authors : 佐藤昭, 志田広海, Viacheslav V. Popov, 尾辻泰一
  • Title : 二重格子ゲートHEMT内二次元電子ガスにおけるプラズマ不安定性
  • Journal : 信学会レーザー量子エレクトロニクス研究会, 信学技報, vol. 112, no. 184, LQE2012-24, pp. 1-4, 仙台, Aug. 23, 2012.
  • No. 546
  • Authors : M. Ryzhii, T. Otsuji, S. Yurchenko, N. Ryabova, V. Ryzhii, and M.S. Shur
  • Title : Plasma effects in graphene-based electro-optical modulators
  • Journal : PIERS: Progress In Electromagnetics Research Symposium 2012 Abstracts, p. 802, Moscow, Russia, August 19-23, 2012.
  • No. 545
  • Authors : T. Otsuji, S. Boubanga Tombet, A. Satou, M. Ryzhii, and V. Ryzhii
  • Title : Terahertz wave generation using graphene -toward the creation of terahertz graphene injection lasers
  • Journal : Lester Eastman Conf. on High Performance Devices, T1, Brown Univ. LI, USA, Aug. 7-9, 2012. (invited)doi: 10.1109/lec.2012.6410968
  • No. 544
  • Authors : A. El Moutaouakil, T. Suemitsu, T. Otsuji, D. Coquillat, and W. Knap
  • Title : Nonresonant detection of terahertz radiation in high-electron-mobility transistor structure using InAlAs/InGaAs/InP material systems at room temperature
  • Journal : Journal of Nanoscience and Nanotechnology, Vol. 12, No. 8, pp. 6737-6740, Aug. 2012.DOI: 10.1166/jnn.2012.4575
  • No. 543
  • Authors : Y. Takatsuka, K. Takahagi, E. Sano, V. Ryzhii, and T. Otsuji
  • Title : Gain enhancement in graphene terahertz amplifiers with resonant structures
  • Journal : J. Appl. Phys. Vol. 112, pp. 033103-1-4, Aug. 1, 2012.DOI: 10.1063/1.4742998
  • No. 542
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, and V. Mitin
  • Title : Terahertz graphene lasers: injection versus optical pumping
  • Journal : ICPS: 31st Int. Conf. on the Physics of Semiconductors (AIP Conference Proceedings), 26.2 (2 pages), Zurich, Swiss, July 29th-Aug. 3rd, 2012; AIP Conf. Proc., Vol. 1566, pp. 117-118, 2013.
  • No. 541
  • Authors : 鷹林 将, 楊 猛, 小川修一, 林 広幸, 栗田裕記, 高桑雄二, 末光哲也, 尾辻泰一
  • Title : ダイヤモンドライクカーボン絶縁膜を用いたグラフェンFET
  • Journal : 信学会電子デバイス研究会, 信学技報, vol. 112, no. 154, ED2012-53, pp. 67-72, July 27, Fukui, 2012.
  • No. 540
  • Title : グラフェンの最先端技術と拡がる応用 ―グラフェンの材料科学, 成長, 合成技術, 各種デバイス応用―, 尾辻泰一監修, フロンティア出版, 東京, 2012.7.25. (尾辻泰一, 第1章"総論, " 第6章3節"グラフェンのプラズモン特性とテラヘルツデバイス応用, " 他.)
  • No. 539
  • Title : ナノエレクトロニクスにおける絶縁超薄膜技術 ~製膜技術と膜, 界面の物性科学~, エヌ, ティー, エス, 東京, 2012.7.20. (尾辻泰一, "グラフェンチャネルFET のゲートスタック技術, " 第3編第2章.)
  • No. 538
  • Authors : 尾辻泰一
  • Title : グラフェンを用いたテヘルツ光源とその応用
  • Journal : 日本学術振興会, 光電相互変換第125委員会/光エレクトロニクス第130委員会/テラヘルツ波科学技術と産業開拓第182委員会合同研究会, テーマ: 「光と電波の境界領域における最近の話題」(仮), 明治大学駿河台キャンパス, 東京, July 20, 2012. (invited).
  • No. 537
  • Authors : T. Otsuji, A. Satou, M. Ryzhii, and V. Ryzhii
  • Title : Toward the creation of terahertz graphene lasers: injection vs. optical pumping
  • Journal : TeraNano 2012: 2nd Int. Symp on Terahertz Nanoscience, Okinawa, Japan, July 4, 2012. (invited)
  • No. 536
  • Authors : A. Satou, H. Shida, T. Otsuji, and V. Ryzhii
  • Title : Simulation of terahertz plasmons in graphene and heterostructure two-dimensional electron gas
  • Journal : TeraNano 2012: 2nd Int. Symp on Terahertz Nanoscience, Okinawa, Japan, July 4, 2012.
  • No. 535
  • Authors : Y. Kurita, T. Watanabe, T. Fukushima, S. B. Tombet, A. Satou, V. Ryzhii, T. Otsuji, S. Chan
  • Title : Relationship between momentum relaxation time and negative dynamic conductivity in optically pumped graphene
  • Journal : TeraNano 2012: 2nd Int. Symp on Terahertz Nanoscience, P-05, Okinawa, Japan, July 4, 2012.
  • No. 534
  • Authors : T. Fukushima, Y. Tanimoto, S. Boubanga-Tombet, T. Watanabe, T. Otsuji, Y. Wang, H. Minamide, H. Ito, D. Fateev, V. Popov, D. Coquillat, W. Knap
  • Title : Resonant detection of terahertz radiation at low temperature by asymmetric dual-grating-gate HEMT
  • Journal : TeraNano 2012: 2nd Int. Symp on Terahertz Nanoscience, P-04, Okinawa, Japan, July 4, 2012.
  • No. 533
  • Authors : T. Watanabe, T. Fukushima, Y. Kurita, A. Satou, T. Otsuji
  • Title : Instability-driven terahertz emission and injection locking behavior in an asymmetric dual-grating gate HEMT with a vertical cavity structure
  • Journal : TeraNano 2012: 2nd Int. Symp on Terahertz Nanoscience, P-03, Okinawa, Japan, July 4, 2012.
  • No. 532
  • Authors : T. Otsuji, S. Boubanga Tombet, A. Satou, M. Ryzhii, and V. Ryzhii
  • Title : Toward the creation of terahertz graphene injection lasers
  • Journal : ICSFS: Int. Conf. on Solid Films and Surfaces, GRA2-2, Genoa, Italy, July 2, 2012.
  • No. 531
  • Authors : T. Watanabe, S. Boubanga Tombet, Y. Tanimoto, Y. Wang, H. Minamide, H. Ito, D. Fateev, V. Popov, D. Coquillat, W. Knap, Y. Meziani, and T. Otsuji
  • Title : Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure
  • Journal : Solid-State Electron. Vol. 78, pp. 109-114, June 2012.doi: 10.1016/j.sse.2012.05.047
  • No. 530
  • Authors : V. Ryzhii, d T. Otsuji
  • Title : Graphene terahertz injection lasers: concepts and feasibility of realization
  • Journal : 2012 Advanced Research Workshop on Future Trends in Microelectronics (FTM-7) Digest, p. 22, Corsica, June 25-29, 2012.
  • No. 529
  • Authors : S. Boubanga-Tombet, Y. Tanimoto, T. Watanabe, T. Suemitsu, W. Yuye, H. Minamidev, H. Ito, V. Popov, and T. Otsuji
  • Title : Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection
  • Journal : DRC: 70th Device Research Conf. Dig., IV.A-10, pp. 169-170, Penn-State, PA, USA, June 19, 2012.doi: 10.1109/DRC.2012.6256927
  • No. 528
  • Authors : V. Ryzhii, N. Ryabova, M. Ryzhii, T. Otsuji, V. Mitin, and V.E. Karassik
  • Title : Concepts of Terahertz and Infrared Detectors Based on Graphene Structures
  • Journal : Quantum Structure Infrared Photodetectors (QSIP2012) Abstract, p. 33, Corsica, June 17-22, 2012.
  • No. 527
  • Authors : S. Takabayashi, M. Yang, S. Ogawa, Y. Takakuwa, T. Suemitsu, and T. Otsuji
  • Title : Dielectric-tuned diamondlike carbon materials for an ultrahigh-speed self-aligned graphene channel field effect transistor
  • Journal : 4th Int. Conf. on Smart Materials, Structures, and Systems, CIMTEC, A-13.3:L13, Montecatini Terme, Italy, June 14, 2012; Advances in Science and Technology, Vol. 77, pp. 270-275, 2013. (DOI: 10.4028/www.scientific.net/AST.77.270)
  • No. 526
  • Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, and M.S. Shur
  • Title : Double graphene-layer plasma resonances terahertz detector
  • Journal : J. Phys. D: Applied Physics, Vol. 45, No. 30, pp. 302001-1-6, July 2012. (invited)doi:10.1088/0022-3727/45/30/302001
  • No. 525
  • Authors : T. Otsuji, S. A. Boubanga Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhii, and V. Ryzhii
  • Title : Graphene-based devices in terahertz science and technology
  • Journal : J. Phys. D: Applied Physics, Vol. 45, No. 30, pp. 303001-1-9, July 2012. (invited)doi:10.1088/0022-3727/45/30/303001
  • No. 524
  • Authors : 大西俊一, 瀧川信一, 尾辻泰一
  • Title : テラヘルツ波検出GaNトランジスタの開発
  • Journal : 応用物理, Vol. 81, No. 6, pp. 506-510, June 10, 2012.
  • No. 523
  • Authors : T. Otsuji, S. Boubanga Tombet, A. Satou, M. Ryzhii, and V. Ryzhii
  • Title : Toward the creation of terahertz graphene injection lasers
  • Journal : ICOOPMA12: Inc. Conf. on Optical, Optoelectronic, and Photonic Materials and Applications Abstracts, 4C2-3, p. 111, Nara, Japan, June 7, 2012.
  • No. 522
  • Authors : T. Otsuji, S. Boubanga-Tombet, A. Satou, M. Suemitsu, and V. Ryzhii
  • Title : Spectroscopic study on ultrafast carrier dynamics and terahertz amplified stimulated emission in optically pumped graphene
  • Journal : J. Infrared Milli. Terhertz Waves, Vol. 33, pp. 825-838, 2012.DOI: 10.1007/s10762-012-9908-8
  • No. 521
  • Authors : M.-H. Jung, G.-H. Park, Y. Tomohiro, H. Fukidome, T. Suemitsu, T. Otsuji and M. Suemitsu
  • Title : High performance graphene field-effect transistors with extremely small access length using self-aligned source and drain technique
  • Journal : APEMC: Asia-Pacific Symposium on Electro-Magneic Compatibility, WE-PM-NANO 6-4, Singapore, May 21-24, 2012. (invited).doi:10.1016/j.tsf.2012.05.059
  • No. 520
  • Authors : W. Knap, D. Coquillat, N. Dyakonova, O. Klimenko, D. But, F. Teppe, M. Sakowicz, J. Lusakowski, T. Otsuji
  • Title : Plasma nonlinearities and terahertz detection by Field Effect Transistors
  • Journal : 2012 19th International Conference on Microwave Radar and Wireless Communications (MIKON), Vol. 1, pp. 108-111, Warsaw, Poland, May 21-23, 2013. (invited)DOI: 10.1109/MIKON.2012.6233505
  • No. 519
  • Authors : T. Otsuji
  • Title : Spectroscopic study on ultrafast carrier dynamics and terahertz amplified stimulated emission in optically pumped graphene
  • Journal : US-Japan TeraNano Workshop on Nanophotonics & Nanoelectronics, Buffalo, NY, USA, May 11, 2012. (invited)
  • No. 518
  • Authors : V. Ryzhii, M. Ryzhii, N. Ryabova, S. O. Yurchenko, M. S. Shur, A. Satou, and T. Otsuji
  • Title : Graphene-based electro-optical modulator: concept and analysis
  • Journal : IMFEDK: IEEE Int. Meeting for Future of Electron Devices, A-4,
  • No. 517
  • Authors : T. Watanabe, S. A. Boubanga Tombet, Y. Tanimoto, T. Fukushima, T. Otsuji, D. Fateev, V. Popov, D. Coquillat, W. Knap, Y. Meziani, Y. Wang, H. Minamide, and H. Ito
  • Title : Ultrahigh sensitive plasmonic terahertz detection using asymmetric dual-grating gate HEMT structures
  • Journal : CLEO: Science and Innovations, OSA Technical Digest, CTu2B.8, San Jose, CA, USA, May 7-11, 2012.
  • No. 516
  • Authors : M. Yang, S. Ogawa, S. Takabayashi, T. Otsuji, and Y. Takakuwa
  • Title : Synthesis of diamond-like carbon films on Si substrates by photoemission-assisted plasma-enhanced chemical vapor deposition
  • Journal : Thin Solid Films, Vol. 523, pp. 25-28, May 2012.doi:10.1016/j.tsf.2012.05.059
  • No. 515
  • Authors : V. V. Mitin, V. Ryzhii, M. Ryzhii, A. Satou, and T. Otsuji
  • Title : Population inversion and terahertz lasing in graphene
  • Journal : Proc. of SPIE (SPIE Defense Security and Sensing, Conference 8373: Micro- and Nanotechnology Sensors, Systems, and Applications IV, Baltimore, ML, USA) Vol. 8373, pp. 837328-1-14, April 23-27, 2012. (invited)doi:10.1117/12.918662
  • No. 514
  • Authors : D. Svintsov, V. Vyurkov, S. Yurchenko, T. Otsuji, and V. Ryzhii
  • Title : Hydrodynamic model for electron-hole plasma in graphene
  • Journal : J. Appl. Phys. Vol. 111, iss. 083715 (10 pages) April 2012.DOI: 10.1063/1.4705382
  • No. 513
  • Authors : T. Otsuji, S. Boubanga Tombet, A. Satou, M. Ryzhii, and V. Ryzhii
  • Title : Toward the creation of terahertz graphene injection lasers
  • Journal : GDR-I 2012 Workshop, S7-2, Tignes, France 25 April 2012. (invited)
  • No. 512
  • Authors : T. Otsuji, S. Boubanga Tombet, T. Watanabe, Y. Tanimoto, A. Satou, T. Suemitsu, Y. Wang, H. Minamide, H. Ito, Y.M. Meziani, D. Coquillat, W. Knap, V. Popov, D.V. Fateev
  • Title : Ultrahigh-sensitive plasmonic terahertz detectors based on an asymmetric dual-grating gate HEMT structure
  • Journal : Proc. of SPIE (SPIE Defense Security and Sensing, Conference 8363: Terahertz Physics, Devices, and Systems VI: Advance Applications in Industry and Defense, Baltimore, Maryland, USA), Vol. 8363, pp. 83630P-1-8, April 23-27, 2012. (invited)doi: 10.1117/12.919978
  • No. 511
  • Authors : Knap W., Dyakonova N.V., Schuster F., Coquillat D., Teppe F., Giffard B., But D.B., Golenkov O.G., Sizov F.F., Watanabe T., Tanimoto Y., Otsuji T.
  • Title : Terahertz detection and emission by field-effect transistors
  • Journal : Proc. of SPIE (SPIE Defense Security and Sensing, Conference 8363: Terahertz Physics, Devices, and Systems VI: Advance Applications in Industry and Defense, Baltimore, Maryland, USA), Vol. 8496, pp. 84960I-1-12, April 23-27, 2012. (invited)doi: 10.1117/12.930091
  • No. 510
  • Authors : Y. Meng, S. Ogawa, S. Takabayashi, T. Otsuji, and Y. Takakuwa
  • Title : Development of the Photoemission-assisted Plasma Enhanced CVD Process for Diamond-like Carbon Insulator Films of Graphene FET Gate Stack
  • Journal : MRS Spring Meeting Proc., EE9.10., San Francisco, CA, April 13, 2012.
  • No. 509
  • Authors : S. Takabayashi, M. Yang, S. Ogawa, Y. Takakuwa, T. Suemitsu, and T. Otsuji
  • Title : Dielectric-tuned Diamondlike Carbon Materials for a High-performance Self-aligned Graphene-channel Field Effect Transistor
  • Journal : MRS Spring Meeting Proc., EE9.4., San Francisco, CA, USA, April 13, 2012.; MRS Symp. Proc. vol. 1451, pp. 185-190, 2013. (DOI: 10.1557/opl.2012.960)
  • No. 508
  • Authors : H. Fukidome, M. Kotsugi, T. Ohkouchi, A. Yoshigoe, Y. Teraoka, Y. Enta, T. Kinoshita, T. Suemitsu, T. Otsuji, and M. Suemitsu
  • Title : Control of Electronic and Structural Properties of Epitaxial Graphene on 3C-SiC/Si and Its Device Applications
  • Journal : MRS Spring Meeting Proc., EE8.16., San Fransisco, CA, USA, April 12, 2012.
  • No. 507
  • Authors : T. Otsuji, S. Boubanga Tombet, A. Satou, and V. Ryzhii
  • Title : Terahertz light amplification by stimulated emission of radiation in optically pumped graphene
  • Journal : 2012 MRS Spring Meeting, EE4.5, Moscone West Convention Center - San Francisco, CA, USA, April 11, 2012. (invited); MRS Symp. Proc. Vol. 1451, 2013. (DOI: http://dx.doi.org/10.1557/opl.2012.1108)
  • No. 506
  • Authors : T. Otsuji, S. Boubanga Tombet, A. Satou, M. Ryzhii, and V. Ryzhii
  • Title : Terahertz wave generation using graphene
  • Journal : MRS Spring Meeting, L, Moscone West Convention Center - San Francisco, CA, USA, April 11, 2012. (invited).; MRS Symp. Proc. Vol. 1437, 2013. (DOI: 10.1557/opl.2012.1186)
  • No. 505
  • Authors : T. Otsuji
  • Title : Emission and detection of terahertz radiation using two-dimensional electrons in III-V semiconductors and graphene
  • Journal : ISSTT: the 23rd International Symposium on Space Terahertz Technology Proceedings, I-4(4pages), Tokyo, April 2-4, 2012. (invited)
  • No. 504
  • Authors : A. Satou, T. Otsuji, V. Ryzhii, and F.T. Vasko
  • Title : Terahertz negative dynamic conductivity in optically pumped graphene
  • Journal : Proceedings of the 31st PIERS in Kuala Lumpur, 2A1-3, pp. 486-490, Malaysia, 27-30 March, 2012. (invited).
  • No. 503
  • Authors : M. Ryzhii, V. Ryzhii, N. V. Baryshnikov, V. E. Karassik, and T. Otsuji
  • Title : Interband detectors of terahertz and infrared radiation based on graphene p-i-n structures
  • Journal : The 31st PIERS in Kuala Lumpur, 2P-8, Malaysia, 27-30 March, 2012.
  • No. 502
  • Authors : 鷹林将, 楊猛, 小川修一, 高桑雄二, 吹留博一, 末光眞希, 末光哲也, 尾辻泰一
  • Title : ダイヤモンドライクカーボン薄膜をトップゲート絶縁膜としたグラフェンFET
  • Journal : 信学総全大, C-10-15, 岡山, March 23, 2012.
  • No. 501
  • Authors : 佐藤 昭, 志田 広美, Viacheslav V. Popov, 尾辻 泰一
  • Title : 二重格子ゲートトランジスタ構造における二次元プラズマ不安定性
  • Journal : 2012年春季 第59回 応用物理学関係連合講演会予稿集, 15a-GP2-3, 早稲田, 東京, March 15-18, 2012.
  • No. 500
  • Authors : 谷本 雄大, Stephane Boubanga-Tombet, Yuye Wang, 南出 泰亜, 伊藤 弘昌, Denis Fateev, Viacheslav Popov, Dominique Coquillat, Wojciech Knap, 尾辻 泰一
  • Title : 非対称二重格子状ゲート電極を有するHEMTを用いたテラヘルツ波検出
  • Journal : 2012年春季 第59回応用物理学関係連合講演会予稿集, 17p-E8-16, 早稲田, 東京, March 15-18, 2012.
  • No. 499
  • Authors : 鷹林将, 楊猛, 小川修一, 高桑雄二, 末光眞希, 末光哲也, 尾辻泰一
  • Title : ダイヤモンドライクカーボントップゲート絶縁膜によるグラフェンチャネルFET のチャネルドーピング制御
  • Journal : 2012年春季 第59回応用物理学関係連合講演会予稿集, 17p-B2-3, 早稲田, 東京, March 15-18, 2012.
  • No. 498
  • Authors : 福嶋哲也, Silvia Chan, Stephene Boubanga Tombet, Victor Ryzhii, Vyacheslav Popov, 尾辻泰一
  • Title : グラフェンリボンアレイにおける二次元プラズモン共鳴の観測
  • Journal : 2012年春季 第59回応用物理学関係連合講演会予稿集, 17p-E8-1, 早稲田, 東京, March 15-18, 2012.
  • No. 497
  • Authors : 吉田 智洋, 鹿野 優毅, 尾辻 泰一, 末光 哲也
  • Title : 多層SiCN鋳型を用いたT型ゲート電極の断面形状制御
  • Journal : 2012年春季 第59回応用物理学関係連合講演会予稿集, 18a-GP7-3, 早稲田, 東京, March 15-18, 2012.
  • No. 496
  • Authors : 渡辺 隆之, ステファン ボウバンガ トムベット, シルビア チャン, 福嶋 哲也, 佐藤 昭, ヴィクトール リズィー , 尾辻 泰一
  • Title : 光学励起グラフェンのテラヘルツ誘導増幅放出
  • Journal : 2012年春季 第59回応用物理学関係連合講演会予稿集, 18a-E8-3, 早稲田, 東京, March 15-18, 2012.
  • No. 495
  • Authors : 朴 君昊, 鄭 明鎬, 全 春日, 吹留 博一, 吉田 智弘, 末光 哲也, 尾辻 泰一, 末光 眞希
  • Title : Graphene field effect transistor using a novel self-aligned technique for high speed applications
  • Journal : 2012年春季 第59回応用物理学関係連合講演会予稿集, 早稲田, 東京, March 15-18, 2012.
  • No. 494
  • Authors : D. Svintsov, V. Vyurkov, S. Yurchenko, T. Otsuji, and V. Ryzhii
  • Title : Collective excitations in bipolar graphene plasma
  • Journal : Japan-Russia-USA Symposium on Modeling of Graphene Terahertz, Nano-Mechanical, and Acousto-Optical Devices Dig., MP1-3, Univ. Aizu, Aizu-Wakamatsu, Japan, 8-9 March, 2012.
  • No. 493
  • Authors : A. Satou
  • Title : Ultrafast carrier dynamics in optically pumped graphene
  • Journal : Japan-Russia-USA Symposium on Modeling of Graphene Terahertz, Nano-Mechanical, and Acousto-Optical Devices Dig., MM-3, Univ. Aizu, Aizu-Wakamatsu, Japan, 8-9 March, 2012.
  • No. 492
  • Authors : T. Otsuji
  • Title : Terahertz emission in optically electrically pumped graphene
  • Journal : Japan-Russia-USA Symposium on Modeling of Graphene Terahertz, Nano-Mechanical, and Acousto-Optical Devices Dig., MM-1, Univ. Aizu, Aizu-Wakamatsu, Japan, 8-9 March, 2012. (invited)
  • No. 491
  • Authors : T. Watanabe, S. Boubanga-Tombet, S. Chan, A. Satou, V. Ryzhii, and T. Otsuji
  • Title : Ultrafast carrier dynamics and amplified stimulated THz emission in optically pumped graphene at room temperature
  • Journal : International Workshop: "THz dynamics in carbon based nanostructures," Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany, March 5-7, 2012.
  • No. 490
  • Authors : V. Ryzhii, N. Ryabova, M. Ryzhii, N. V. Baryshnikov, V. E. Karassik, V. Mitin and T. Otsuji
  • Title : Terahertz and infrared photodetectors based on multiple graphene layer and nanoribbon structures
  • Journal : Opto-electronics Review, Vol. 20, No. 1, pp. 15-25, March 2012.DOI: 10.2478/s11772-012-0009-y (invited)
  • No. 489
  • Authors : 尾辻泰一
  • Title : 新しい電磁波領域を切り拓く グラフェンの世界 -ポストシリコンおよび未踏周波数領域テラヘルツ帯利用デバイス開発に向けて
  • Journal : ULVAC, No. 62, pp. 20-23, March 2012 (in Japanese); T. Otsuji, "The World of Graphene: Cutting the Way into a New Electromagnetic Domain Towards Post-Silicon and the Development of Devices Utilizing the Unexplored Frequency Domain of the Terahertz Band, " ULVAC, No. 62, pp. 20-23, March 2012.
  • No. 488
  • Authors : T. Watanabe, T. Fukushima, S. Chan, S. Boubanga-Tombet, A. Satou, V.V. Popov, V. Ryzhii, T. Otsuji
  • Title : Observation of Terahertz 2D-Plasmon Modes in a Graphene Ribbon Array
  • Journal : Gordon Research Conference, Ultrafast Phenomena in Cooperative Systems, P6, Hotel Galvez, Galveston, TX, Feb. 19-24, 2012.
  • No. 487
  • Authors : T. Otsuji, S. Boubanga-Tombet, S. Chan, T. Watanabe, A. Satou, V. Ryzhii
  • Title : Ultrafast carrier dynamics and terahertz amplified stimulated emission in optically pumped graphene at room temperature
  • Journal : Gordon Research Conference, Ultrafast Phenomena in Cooperative Systems, P4, Hotel Galvez, Galveston, TX, Feb. 19-24, 2012.
  • No. 486
  • Authors : 尾辻 泰一, 佐藤 昭, 末光 哲也, 佐野 栄一, マキシム リズィー, ヴィクトール リズィー
  • Title : グラフェンのテラヘルツ電子デバイス応用
  • Journal : 電子情報通信学会 テラヘルツ応用システム研究会 「テラヘルツ技術の産業応用 ~THz 波通信の可能性を探る~」, 東京, Feb. 20, 2012. (invited).
  • No. 485
  • Authors : 高塚裕也, 高萩 和宏, 佐野 栄一, Victor RYZHII, 尾辻 泰一
  • Title : 共振構造導入によるグラフェンテラヘルツ増幅器の高利得化
  • Journal : 信学技報 vol. 111, no. 425, ED2011-148, pp. 35-40, 北大, 札幌, Feb. 7, 2012.
  • No. 484
  • Authors : 尾辻 泰一
  • Title : 二次元プラズモンおよびグラフェンによるテラヘルツ波発生, 検出
  • Journal : IEEE MTT-S Kansai Chapter主催 テラヘルツワークショップ "テラヘルツ技術の最新動向と今後の展望, " 大阪, Feb. 4, 2012. (invited).
  • No. 483
  • Authors : V. V. Popov, D. V. Fateev, O. V. Polischuk, S. A. Nikitov, T. Otsuji, M. S. Shur
  • Title : Resonant properties of the planar plasmonic crystal on a membrane substrate
  • Journal : Bulletin of the Russian Academy of Sciences: Physics, Vol. 76, Iss. 2, pp. 229-232, Feb. 2012.
  • No. 482
  • Authors : S. Boubanga-Tombet, S. Chan, T. Watanabe, A. Satou, V. Ryzhii, and T. Otsuji
  • Title : Ultrafast carrier dynamics and terahertz emission in optically pumped graphene at room temperature
  • Journal : Physical Review B, Vol. 85, Iss. 3, pp. 035443-1-6, 2012.DOI: 10.1103/PhysRevB.85.035443
  • No. 481
  • Authors : 鷹林 将, 楊 猛, 小川 修一, 高桑 雄二, 末光 哲也, 尾辻 泰一
  • Title : ダイヤモンドライクカーボン薄膜をトップゲート絶縁膜としたグラフェンFET
  • Journal : 応用物理学会 薄膜, 表面物理分科会, シリコンテクノロジー分科会 共催特別研究会 「ゲートスタック研究会 ─材料, プロセス, 評価の物理─」第17回研究会予稿集, pp. 21-24, 三島, Jan. 21, 2012.
  • No. 480
  • Authors : 楊 猛, 小川 修一, 鷹林 将, 尾辻 泰一, 高桑 雄二
  • Title : トップゲート型グラフェン, チャネルFETのゲートスタック用炭素系絶縁膜の合成プロセスの開発
  • Journal : 応用物理学会 薄膜, 表面物理分科会, シリコンテクノロジー分科会 共催特別研究会 「ゲートスタック研究会 ─材料, プロセス, 評価の物理─」第17回研究会予稿集, pp. 205 - 208, 三島, Jan. 21, 2012.
  • No. 479
  • Authors : T. Yoshida, K. Akagawa, T. Otsuji, and T. Suemitsu
  • Title : InGaAs HEMTs with T-gate electrodes fabricated using HMDS SiN mold
  • Journal : Phys. Status Solidi C, Vol. 9, No. 2, pp. 354-356, Jan. 2012.doi: 10.1002/pssc.201100272
  • No. 478
  • Authors : S. Takabayashi, S. Ogawa, Y. Takakuwa, H.-C. Kang, R. Takahashi, H. Fukidome, M. Suemitsu, T. Suemitsu, T. Otsuji
  • Title : Carbonaceous field effect transistor with graphene and diamondlike carbon
  • Journal : Diamond and Related Materials, Vol. 22, pp. 118-123, Jan. 2012.doi: 10.1016/j.diamond.2011.12.037
  • No. 477
  • Authors : 渡辺隆之, ステファン ボウバンガ トムベット, 福嶋哲也, 佐藤昭, 尾辻泰一, ヴィクトール リズィー
  • Title : 光学励起グラフェンのテラヘルツ誘導増幅放出
  • Journal : 電子情報通信学会電子デバイス研究会, 信学技報 Vol. 111, No. 338, pp. 79-83, 仙台, Dec. 15, 2011.
  • No. 476
  • Authors : 福嶋哲也, シルビア チャン, ステファン ボウバンガ トンベット, ビクトール リズィー, ヴィチェスラブ ポポフ, 尾辻泰一
  • Title : グラフェンリボン格子における二次元プラズモンモードの観測
  • Journal : 電子情報通信学会電子デバイス研究会, 信学技報 Vol. 111, No. 338, pp. 69-73, 仙台, Dec. 15, 2011.
  • No. 475
  • Authors : 谷本雄大, Stephane Boubanga-Tombet, 渡辺隆之, Yuye Wang, 南出泰亜, 伊藤弘昌, Denis Fateev, Vyacheslav Popov, Dominique Coquillat, Wojciech Knap, 尾辻泰一
  • Title : 非対称二重回折格子状ゲート電極を有するInAlAs/InGaAs/InP HEMTを用いた超高感度プラズモニックテラヘルツ波検出器
  • Journal : 電子情報通信学会電子デバイス研究会, 信学技報 Vol. 111, No. 338, pp. 57-61, 仙台, Dec. 15, 2011.
  • No. 474
  • Authors : V.V. Popov, D.V. Fateev, T. Otsuji, Y.M. Meziani, D. Coquillat, W. Knap
  • Title : Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell
  • Journal : Appl. Phys. Lett., Vol. 99, Iss. 24, pp. 243504-1-4, 2011.doi:10.1063/1.3670321
  • No. 473
  • Authors : T. Watanabe, S. Boubanba Tombet, Y. Tanimoto, Yuy.e Wang, H. Minamide, H. Ito, D. Fateev, V. Popov, D. Coquillat, W. Knap, and T. Otsuji
  • Title : Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure
  • Journal : ISDRS 2011: International Semiconductor Device Research Symposium, FP3-06, Univ. Maryland, MD, USA, Dec. 7-9, 2011.
  • No. 472
  • Authors : 尾辻
  • Title : グラフェン超高周波光電子デバイス技術の展望
  • Journal : SEMICON Japan 2011, SEMIテクノロジーシンポジウム, STS Session2 先端デバイス, 幕張メッセ, Dec. 8, 2011. (invited).
  • No. 471
  • Authors : 尾辻
  • Title : グラフェンの光電子デバイス応用 -研究動向と将来展望
  • Journal : 第25回ダイヤモンドシンポジウム, 産業技術総合研究所, つくば, Dec. 8, 2011. (invited).
  • No. 470
  • Authors : J. Torres, L. Varani, F. Teppe, W. Knap, S. Boubanga-Tombet, T. Otsuji, P. Shiktorov, E. Starikov, and V. Gružinskis
  • Title : Investigation of 2D plasma resonances in HEMTs by using electro-optical sampling technique
  • Journal : Lithuanian Journal of Physics, Vol. 51, No. 4, pp. 324-329, Dec. 2011.doi: 10.3952/lithjphys.51405
  • No. 469
  • Authors : 楊 猛, 小川 修一, 鷹林 将, 尾辻 泰一, 高桑 雄二
  • Title : トップゲート, グラフェンFETのダイヤモンドライクカーボン絶縁膜形成プロセスの開発
  • Journal : 応用物理学会東北支部第66回学術講演会, いわき市, Dec. 1-2, 2011.
  • No. 468
  • Authors : T. Otsuji
  • Title : Emission and detection of terahertz dadiation using two-dimensional electrons in III-V semiconductors and graphene
  • Journal : International TeraNano &GDRI Workshop Extended Abstract, 28I-11, Osaka, Nov. 24-29, 2011. (invited).
  • No. 467
  • Authors : Y. Tanimoto, T. Watanabe, A. Satou, T. Otsuji
  • Title : Terahertz Injection-Locked Oscillation in Plasmon-Resonant Transistors
  • Journal : International TeraNano &GDRI Workshop Extended Abstract, 28P-15, Osaka, Nov. 28, 2011.
  • No. 466
  • Authors : T. Watanabe, T. Fukushima, S. Boubanga Tombet, A. Satou, T. Otsuji, S. Chan, V. Ryzhii, V. Popov
  • Title : Observation of Terahertz 2D-Plasmon Modes in a Graphene Ribbon Array
  • Journal : International TeraNano &GDRI Workshop Extended Abstract, 28P-04, Osaka, Nov. 24-29, 2011.
  • No. 465
  • Authors : T. Fukushima, T. Watanabe, S. B. Tombet, A. Satou and T. Otsuji
  • Title : Observation of Stimulated Emission from Optically Pumped Graphene by UsingTerahertz Photon Echoes
  • Journal : International TeraNano &GDRI Workshop Extended Abstract, 28P-03, Osaka, Nov. 24-29, 2011.
  • No. 464
  • Authors : V. V. Popov, D. V. Fateev, T. Otsuji, Y. M.Meziani, D. Coquillat, W. Knap
  • Title : Plasmonic Terahertz Ratchet Effect in a Periodically Gated 2D Electron System
  • Journal : International TeraNano &GDRI Workshop Extended Abstract, 28P-16, Osaka, Nov. 24-29, 2011.
  • No. 463
  • Authors : A. Satou, T. Otsuji, V. Ryzhii, and F. T. Vasko
  • Title : Population Inversion in Optically Pumped Graphene: Effect of Carrier-Carrier Scattering
  • Journal : International TeraNano &GDRI Workshop Extended Abstract, 24P-18, Osaka, Nov. 24-29, 2011.
  • No. 462
  • Authors : 楊 猛, 小川 修一, 鷹林 将, 尾辻 泰一, 高桑 雄二
  • Title : DLC膜成長の光電子制御プラズマ放電条件依存
  • Journal : 第52回真空に関する連合講演会, 日本真空協会, 東京, Nov. 16-18, 2011.
  • No. 461
  • Authors : V. Ryzhii, M. Ryzhii, V. Mitin, and T. Otsuji
  • Title : Toward the creation of terahertz graphene injection laser
  • Journal : J. Appl. Phys., Vol. 110, iss. 9, pp. 094503-1-9, 2011. http://dx.doi.org/10.1063/1.3657853
  • No. 460
  • Authors : T. Watanabe, Y. Tanimoto, A. Satou, T. Otsuji
  • Title : Terahertz injection locked oscillation in plasmon-resonant transisto
  • Journal : , MOC'11 17th Microoptics Conference Digest, D2, 2011.
  • No. 459
  • Authors : T. Otsuji, T. Watanabe, K. Akagawa, Y. Tanimoto, T. Suemitsu, V. Ryzhii, D. Coquillat, W. Knap
  • Title : New semiconductor materials and devices for terahertz imaging and sensing
  • Journal : IEEE SENSORS Conference Proceedings, A1L-C-1196, pp. 44-47, Limerick, Ireland, Oct. 28-31, 2011. (invited).
  • No. 458
  • Authors : M.-H. Jung, C. Quan, H. Fukidome, T. Suemitsu, T. Otsuji, and M. Suemitsu
  • Title : Impacts of the access resistance on the channel conduction characteristics in graphene FETs
  • Journal : MNC 2011: 24th International Microprocesses and Nanotechnology Conference, 27P-11-144L, ANA Hotel Kyoto, Kyoto, Japan, October 24-27, 2011.
  • No. 457
  • Authors : 尾辻泰一
  • Title : グラフェンの電子デバイス応用
  • Journal : ファインセラミックスシンポジウム2011資料集, pp. 21-28, Winc Aichi, 名古屋, Oct. 26th, 2011. (invited).
  • No. 456
  • Authors : V. Ryzhii, M. Ryzhii and T. Otsuji
  • Title : Tunneling recombination in optically pumped graphene with electron-hole puddles
  • Journal : Appl. Phys. Lett., Vol. 99, iss. 17, pp. 173504-1-3, 2011.DOI: 10.1063/1.3656712
  • No. 455
  • Authors : T. Suemitsu, M. Kubo, H. Handa, R. Takahashi, H. Fukidome, M. Suemitsu, and T. Otsuji
  • Title : Graphene/SiC/Si FETs with SiCN Gate Stack
  • Journal : ECS Transactions, Vol. 41, No. 6, pp. 249-254, 2011.doi: 10.1149/1.3629973
  • No. 454
  • Authors : T. Suemitsu, M. Kubo, H. Handa, R. Takahashi, H. Fukidome, M. Suemitsu, and T. Otsuji
  • Title : Graphene/SiC/Si FETs with SiCN Gate Stack
  • Journal : 220th ECS Meeting, #2110, Boston, Oct. 9-14, 2011.
  • No. 453
  • Title : Wonbong Choi and Jo-won Lee edited, Graphene: synthesis and applications (Nanomaterials and Their Applications; 3), CRC Press, Taylor &Francis group, New York, USA, October 6th, 2011., ISBN 978-1-4398-6187-5. (T. Otsuji, T. Suemitsu, A. Satou, M. Suemitsu, E. Sano, M. Ryzhii, and V. Ryzhii, Chapt. 4, "Electronic and photonic applications for ultrahigh-frequency graphene-based devices, " pp. 85-115.)
  • No. 452
  • Authors : S.A. Boubanga Tombet, A. Satou, T. Otsuji, V. Ryzhii
  • Title : Stimulated terahertz emission from optically pumped graphene
  • Journal : IRMMW-THz: International Conf. on Infrared, Millimeter and Terahertz Waves, W4B.3, Oct. 3-7, Houston, TX, USA, 2011.DOI: 10.1109/irmmw-THz.2011.6105193
  • No. 451
  • Authors : H. Fukidome, R. Takahashi, S. Abe, K. Imaizumi, H. Handa, H.-C. Kang, H. Karasawa, T. Suemitsu, T. Otsuji, Y. Enta, A. Yoshigoe, Y. Teraoka, M. Kotsugi, T. Ohkouchi, T. Kinoshita and M. Suemitsu
  • Title : Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications
  • Journal : J. Mater. Chem.: Journal of Materials Chemistry, Vol. 21, Iss. 43, pp. 17242-17248, 2011.DOI: 10.1039/C1JM12921J
  • No. 450
  • Authors : V. Ryzhii, M. Ryzhii, A. A.Dubinov, V. Ya. Aleshkin, V. Mitin, M. S. Shur, A. Satou, and T. Otsuji
  • Title : Concepts of terahertz and infrared devices based on graphene structures
  • Journal : IRMMW-THz: International Conf. on Infrared, Millimeter and Terahertz Waves, Tu3C.1, Oct. 3-7, Houston, TX, USA, 2011. (invited).DOI: 10.1109/irmmw-THz.2011.6105062
  • No. 449
  • Authors : A. Satou, S. A. Boubanga Tombet, T. Otsuji, and V. Ryzhii
  • Title : Threshold of terahertz wave amplificaion from optically pumped graphene
  • Journal : ACSIN 2011: 11th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures Dig., p. 117, St. Petersburg, Russia, Oct. 4, 2011. (invited).
  • No. 448
  • Authors : V. Ryzhii, M. Ryzhii, and T. Otsuji
  • Title : Mechanisms of Recombination in optically pumped graphene with electron-hole puddles
  • Journal : QNN: International Workshop on Quantum Nanostructure&Nanoelectronics, Mo-3, Tokyo, Oct. 3-4, 2011.
  • No. 447
  • Authors : T. Fukushima, S. Chan, S. Boubanga Tombet, V. Ryzhii, V. Popov, T. Otsuji
  • Title : Observation of terahertz 2D-plasmon modes in a graphene ribbon array
  • Journal : QNN: International Workshop on Quantum Nanostructure&Nanoelectronics, P-24, Tokyo, Oct. 3-4, 2011.
  • No. 446
  • Authors : T. Otsuji
  • Title : Trends and future of ultrafast transistors and terahertz light amplification by stimulated emission of radiation using graphene
  • Journal : SSDM: Int. Conf. on Solid State Devices and Materials, K-8-1, WINC AICHI, Nagoya, Japan, Sept. 28-30, 2011. (invited).
  • No. 445
  • Authors : V. Ryzhii, M. Ryzhii, V. Mitin, A. Satou, and T. Otsuji
  • Title : Effect of heating and cooling of photogenerated electron-hole plasma in optically pumped graphene on population inversion
  • Journal : Jpn. J. Appl. Phys., Vol. 50, No. 9, pp. 094001-1-9, 2011.doi: 10.1143/JJAP.50.094001
  • No. 444
  • Authors : M. Ryzhii, V. Mitin, A. Satou, T. Otsuji, and V. Ryzhii
  • Title : Modeling of short-gate and drain-induced barrier lowering effects in graphene bilayer field-effect transistors: weak nonlocality approximation
  • Journal : SISPAD: 2011 International Conference on Simulation of Semiconductor Processes and Devices, P22, Tokyo, September 8-10, 2011.
  • No. 443
  • Authors : Y.M. Meziani, E. Garcia, E. Velazquez, E. Diez, A. El Moutaouakil, T. Otsuji, and K. Fobelets
  • Title : Strained silicon modulation field-effect transistor as a new sensor of terahertz radiation
  • Journal : Semicond. Sci. Technol., Vol. 26, No. 10, pp. 105006-1-4, 2011.doi:10.1088/0268-1242/26/10/105006
  • No. 442
  • Authors : , 全, 吹留, 末光, 尾辻, 末光
  • Title : Dual-gate動作によるgraphene channel変調と超高速デバイスへの応用
  • Journal : 2011年秋季第72回応用物理学会学術講演会, 31a-K-7. 山形, Aug. 31, 2011.
  • No. 441
  • Authors : 吉田, 赤川, 尾辻, 末光
  • Title : HMDS-SiN鋳型により作製したT型ゲート電極InGaAs HEMTのゲート遅延解析
  • Journal : 2011年秋季第72回応用物理学会学術講演会, 31a-A-3, 山形, Aug. 31, 2011.
  • No. 440
  • Authors : 尾辻泰一
  • Title : グラフェンチャネルトランジス
  • Journal : 第49回応用物理学会スクール(2011年秋季), 山形, Aug.30, 2011. (invited).
  • No. 439
  • Authors : S. Boubanga Tombet, Y. Tanimoto, and T. Otsuji
  • Title : Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
  • Journal : 電子情報通信学会レーザ量子エレクトロニクス研究会, 信学技報, Vol. 111, No. 186, LQE2011-53, pp. 117-121, 北大, 北海道, Aug. 25-26, 2011.
  • No. 438
  • Authors : 福嶋哲也, 渡辺隆之, 谷本雄大, Boubanga Tombet Stephene, 佐藤 昭, 尾辻泰一
  • Title : Observation of Stimulated Emission from Optically Pumped Graphene by Using Terahertz Photon Echoes
  • Journal : 平成23年度電気関係学会東北支部連合大会, 2A10, 多賀城, Aug. 25-26, 2011.
  • No. 437
  • Authors : T. Otsuji, S.A. Boubanga Tombet, S. Chan, T. Watanabe, A. Satou, and V. Ryzhii
  • Title : Amplified stimulated terahertz emission from optically pumped graphene
  • Journal : PIERS: Progress in Electromagnetics Research Symposium Proceedings, 2A3-1, pp. 517-519, Marrakesh, Morocco, March 20-23, 2011. (invited); PIERS Online vol. 7, no. 4, pp. 308-310, Aug. 19, 2011. (invited)
  • No. 436
  • Authors : T. Otsuji, S. Boubanga-Tombet, S. Chan, T. Watanabe, A. Satou, M. Ryzhii, and V. Ryzhii
  • Title : Terahertz light amplification of stimulated emission of radiation in optically pumped graphene
  • Journal : XXX URSI General Assembly and Scientific Symposium, Session DAF1 – Enabling Technologies for Millimeter and THz Wave Applications, DAF1.7, Istanbul, Turkey, Aug. 19, 2011.DOI: 10.1109/URSIGASS.2011.6050613
  • No. 435
  • Authors : V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, and V. Mitin
  • Title : Nonequilibrium carriers and phonons in optically excited graphene: heating and cooling
  • Journal : EDISON17: 17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, P2.8, Santa Barbara, Aug. 7-12, 2011.
  • No. 434
  • Authors : J. Torres, F. Teppe, P. Nouvel, S. Boubanga-Tombet, A. El Moutaouaki, D. Coquillat, N. Dyakonova, C. Palermo, W. Knap, L. Varani, T. Ostuji, E. Starikov, P. Shiktorov, V. Gružinskis, Y. Roelens, A. Shchepetov, S. Bollaert
  • Title : Terahertz emission from optically excited plasma ocsillation in HEMTs
  • Journal : EDISON17: 17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, M2.4, Santa Barbara, Aug. 7-12, 2011.
  • No. 433
  • Authors : V. Ryzhii, M Ryzhii, A. Satou, T. Otsuji, and V. Mitin
  • Title : Optical excitation of graphene, population inversion, and terahertz lasing
  • Journal : Proceeding of 15th International Conference on Narrow Gap Systems (NGS15), Virginia Polytechnic Inst. Tech., VA, USA, August 1-5, 2011. (AIP Conf. Proc. Vol. 1416, pp. 26-30, 2011. (invited). (doi: 10.1063/1.3671689)
  • No. 432
  • Authors : A. Satou, T. Otsuji, V. Ryzhii, F.T. Vasko
  • Title : The effect of carrier-carrier scattering on population inversion in optically pumped graphene
  • Journal : EP2DS-19: the 19th international conference on Electronic Properties of Two-Dimensional Electron Systems, We-P-3, Florida, USA, July 25-29, 2011.
  • No. 431
  • Authors : A. El Moutaouakil, H.-C. Kang, H. Handa, F. Fukidome, T. Suemitsu, E. Sano, M. Suemitsu, and T. Otsuji
  • Title : Room temperature logic Inverter on epitaxial graphene-on-silicon device
  • Journal : Jpn. J. Appl. Phys. Vol. 50, No. 7, pp. 070113-1-4, July 2011.doi: 10.1143/JJAP.50.070113
  • No. 430
  • Authors : M.-H. Jung, H. Handa, R. Takahashi, H. Fukidome, T. Suemitsu, T. Otsuji, and M. Suemitsu
  • Title : Investigation of graphene field effect transistors with Al2O3 gate dielectrics formed by metal oxidation
  • Journal : Jpn. J. Appl. Phys. Vol. 50, No. 7, pp. 070111-1-5, July 2011.doi: 10.1143/JJAP.50.070111
  • No. 429
  • Authors : M.-H. Jung, H. Handa, R. Takahashi, H. Fukidome, T. Suemitsu, T. Otsuji, and M. Suemitsu
  • Title : Polymer material as a gate dielectric for graphene field-effect-transistor applications
  • Journal : Jpn. J. Appl. Phys. Vol. 50, No. 7, pp. 070107-1-5, July 2011.doi: 10.1143/JJAP.50.070107
  • No. 428
  • Authors : M. Ryzhii, T. Otsuji, V. Mitin, and V. Ryzhii
  • Title : Characteristics of p–i–n terahertz and infrared photodiodes based on multiple graphene layer structures
  • Journal : Jpn. J. Appl. Phys., Vol. 50, No. 7, pp. 070117-1-6, July 2011.doi: 10.1143/JJAP.50.070117
  • No. 427
  • Authors : Y. Takatsuka, E. Sano, V. Ryzhii, and T Otsuji
  • Title : Terahertz amplifiers based on multiple graphene layer with field-enhancement effect
  • Journal : Jpn. J. Appl. Phys. Vol. 50, No. 7, pp. 070118-1-4, 2011.doi: 10.1143/JJAP.50.070118
  • No. 426
  • Authors : D. Svintsov, V. Vyurkov, V. Ryzhii, and T. Otsuji
  • Title : Effect of 'Mexican hat' on graphene bilayer field-effect transistor characteristics
  • Journal : Jpn. J. Appl. Phys., Vol. 50, No. 7, pp. 070112-1-6, July 2011.doi: 10.1143/JJAP.50.070112
  • No. 425
  • Authors : A. Satou, T. Otsuji, and V. Ryzhii
  • Title : Theoretical study of population inversion in graphene under pulse excitation
  • Journal : Jpn. J. Appl. Phys., Vol. 50, No. 7, pp. 070116-1-4, July 2011. doiI: 10.1143/JJAP.50.070116
  • No. 424
  • Authors : A. Satou, S. Boubanga-Tombet, V. Ryzhii, T. Otsuji
  • Title : Threshold Behavior of Stimulated Terahertz Emission from Optically Pumped Graphene
  • Journal : 12th Int. Conf. Science & Application of Nanotubes, Satellite Symp. on Graphene Technology: Production, Assembly and Applications Abstract, #173, Babbage Lecture Theatre, New Museum site, Cambridge UK, 15-16, July, 2011.
  • No. 423
  • Authors : V. Ryzhii, N. Ryabova, T.Otsuji, V.Ya.Aleshkin, and A.A.Dubinov
  • Title : Novel concepts of optoelectronic devices based on multiple-graphene structures
  • Journal : DMR: Collaborative Conference on 3D & Materials Research, Jeju, South Korea, June 27 - July 1, 2011. (invited).
  • No. 422
  • Authors : T. Suemitsu, M. Kubo, R. Takahashi, H. Fukidome, M. Suemitsu, T. Otsuji
  • Title : Graphene FETs with SiCN gate stack deposited by PECVD using HMDS vapor
  • Journal : WOCSDICE: 35th Workshop on Compound Semiconductor Devices and Integrated Circuits, Catania, Italy, May 29-June 1, 2011.
  • No. 421
  • Authors : T. Yoshida, K. Akagawa, T. Otsuji, and T. Suemitsu
  • Title : InGaAs HEMTs with T-gate electrodes fabricated using HMDS-SiN mold
  • Journal : 38th International Symposium on Compound Semiconductors, Berlin, Germany, May 22-26, 2011.
  • No. 420
  • Authors : A. El Moutaouakil, S. Takabayashi, S. Ogawa, Y. Takakuwa, H.-C. Kang, R. Takahashi, H. Fukidome, M. Suemitsu, E. Sano, T. Suemitsu, T. Otsuji
  • Title : Complimentary logic inverter on epitaxial graphene/6H-SiC field effect transistor with diamond-like carbon film as gate dielectrics at room temperature
  • Journal : Int. Conf. on Graphene: The Road to Applications, Cambridge, MA, USA, May 11-13, 2011.
  • No. 419
  • Authors : T. Otsuji, S. Boubanga Tombet, A. Satou, and V. Ryzhii
  • Title : Amplified stimulated terahertz emission from optically pumped graphene
  • Journal : CLEO: Conference on Lasers and Electro-Optics Dig., CMM3, Baltimore, ML, USA, May 1-7, 2011. (invited).DOI: 10.1364/CLEO_SI.2011.CMM3
  • No. 418
  • Authors : S.A. Boubanga Tombet, T. Otsuji, and W. Knap
  • Title : Coherent and tunable terahertz emission from nano-metric field effect transistor at room temperature
  • Journal : CLEO: Conference on Lasers and Electro-Optics, CMW4, Baltimore, ML, USA, May 1-7, 2011.DOI: 10.1364/CLEO_SI.2011.CMW4
  • No. 417
  • Authors : H. Karasawa, T. Komori, T. Watanabe, A. Satou, H. Fukidome, M. Suemitsu, V. Ryzhii, and T. Otsuji
  • Title : Observation of amplified stimulated terahertz emission from optically pumped heteroepitaxial graphene-on-silicon materials
  • Journal : J. Infrared Milli. Terahertz. Waves, Vol. 32, No. 5, pp. 655-665, 2011.doi:10.1007/s10762-010-9677-1
  • No. 416
  • Authors : T. Otsuji, T. Watanabe, A. El Moutaouakil, H. Karasawa, T. Komori, A. Satou, T. Suemitsu, M. Suemitsu, E. Sano, W. Knap, and V. Ryzhii
  • Title : Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano- and hetero-structures
  • Journal : J. Infrared Milli. Terhz. Waves, Vol. 32, No. 5, pp. 629-645, 2011.doi: 10.1007/s10762-010-9714-0
  • No. 415
  • Authors : W. Knap, S. Nadar, H. Videlier, S. Boubanga-Tombet, D. Coquillat, N. Dyakonova, F. Teppe, K. Karpierz, J. Łusakowski, M. Sakowicz, I. Kasalynas, D. Seliuta, G. Valusis, T. Otsuji, Y. Meziani, A. El Fatimy, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquière
  • Title : Field Effect Transistors for Terahertz Detection and Emission
  • Journal : J. Infrared Milli. Terhz, Vol. 32, No. 5, pp. 618-628, 2011. DOI 10.1007/s10762-010-9647-7
  • No. 414
  • Authors : T. Watanabe, K. Akagawa, Y. Tanimoto, D. Coquillat, W. M. Knap, and T. Otsuji
  • Title : Terahertz imaging with InP high-electron-mobility transistors
  • Journal : SPIE Defense, Security & Sensing, Proc. SPIE, Vol. 8023, iss. 8023-25, Orlando, FL, USA, April 24-27, 2011.DOI: 10.1117/12.887952
  • No. 413
  • Authors : T. Otsuji, S. A. Boubanga Tombet, A. Satou, and V. Ryzhii
  • Title : Terahertz light amplification by stimulated emission of radiation from optically pumped graphene
  • Journal : SPIE Difense, Security & Sensing, Proc. SPIE, Vol. 8023, iss. 802304 (7 pages), Orlando, FL, USA, April 24-27, 2011. (invited). [Proc. SPIE, Vol. 8023, iss. 802304 (7 pages), 2011.]DOI: 10.1117/12.887946
  • No. 412
  • Authors : T. Otsuji
  • Title : Terahertz light amplification by stimulated emission of radiation in optically pumped graphene
  • Journal : VCIAN: Villa Conference on Interactions Among Nanostructures, Las Vegas, Nevada, USA, April 21-25, 2011. (invited).
  • No. 411
  • Authors : A. Satou, S. Boubanga-Tombet, T. Otsuji, and V. Ryzhii
  • Title : Stimulated terahertz emission from optically pumped graphene and its threshold behavior
  • Journal : Graphene 2011Conference, Bilbao, Spain, April 11-14, 2011.
  • No. 410
  • Authors : S. Takabayashi, S. Ogawa, Y. Takakuwa, H.-C. Kang, R. Takahashi, H. Fukidome, M. Suemitsu, T. Suemitsu, T. Otsuji
  • Title : Carbonaceous field effect transistor with graphene and diamondlike carbon
  • Journal : Graphene 2011Conference, Bilbao, Spain, April 11-14, 2011.
  • No. 409
  • Authors : S. Boubanga Tombet, T. Watanabe, S. Chan, A. Satou, and T. Otsuji
  • Title : Amplified stimulated terahertz emission at room temperature from optically pumped graphene
  • Journal : GDR-I Workshop, Tignes, France, March 29-April 1, 2011.
  • No. 408
  • Authors : 鷹林 将, 小川修一, 高桑雄二, 姜 顯澈, 高橋良太, 吹留博一, 末光眞希, 末光哲也, 尾辻泰一
  • Title : ダイヤモンドライクカーボンをゲート絶縁膜としたグラフェンFET
  • Journal : 春季 第58回 応用物理学関係連合講演会, 27a-KQ - 6, 厚木, March 27, 2011.
  • No. 407
  • Authors : 久保真人, 福嶋哲也, 姜 顯澈, 赤川啓介, 吉田智洋, 高橋良太, 半田浩之, 鄭 明鎬, 鷹林 将, 吹留博一, 末光哲也, 末光眞希, 尾辻泰一
  • Title : HMDS-SiN をゲート絶縁膜として用いたグラフェンFET
  • Journal : 春季 第58回 応用物理学関係連合講演会, 27a-KQ - 4, 厚木, March 27, 2011.
  • No. 406
  • Authors : 渡辺隆之, , 赤川啓介, 谷本雄大, Knap Wojciech, Coquillat Dominique, Teppe Frederic, 末光哲也, 尾辻泰一
  • Title : InP 系高電子移動度トランジスタによるサブテラヘルツイメージング
  • Journal : 春季 第58回 応用物理学関係連合講演会, 26a-BX - 2, 厚木, March 26, 2011.
  • No. 405
  • Authors : 尾辻泰一, 佐藤 昭, 末光哲也, Maxim Ryzhii, Victor Ryzhii
  • Title : 二次元プラズモンおよびグラフェンによるテラヘルツ波発生
  • Journal : 春季 第58回 応用物理学関係連合講演会, 26p-BX - 3, 厚木, March 26, 2011.
  • No. 404
  • Authors : A.A. Dubinov, Y.V. Aleshkin, V. Mitin, T. Otsuji, and V. Ryzhii
  • Title : Terahertz surface plasmons in optically pumped graphene structures
  • Journal : J. Phys.: Condens. Matter, Vol. 23, pp. 145302-1-8, 2011.doi: 10.1088/0953-8984/23/14/145302
  • No. 403
  • Authors : 福嶋哲也, 谷本雄大, 渡辺隆之, Stephene Boubanga Tombe, 佐藤 昭, 尾辻泰一
  • Title : 反射型電気光学サンプリングによるテラヘルツフォトンエコーの観測
  • Journal : 春季 第58回 応用物理学関係連合講演会, 25p-KF - 1, 厚木, March 25, 2011.
  • No. 402
  • Authors : 鷹林将, 久保真人, 高橋良太, 吹留博一, 末光眞希, 末光哲也, 尾辻泰一
  • Title : グラフェン/ 金属界面の化学
  • Journal : 春季 第58回 応用物理学関係連合講演会, 24a-KV - 3, 厚木, March 24, 2011.
  • No. 401
  • Authors : 赤川啓介, 吉田智洋, 尾辻泰一, 末光哲也
  • Title : HMDS-SiN を鋳型として用いたT 型ゲート電極の形成
  • Journal : 春季 第58回 応用物理学関係連合講演会, 24a-KS - 5, 厚木, March 24, 2011.
  • No. 400
  • Authors : A. El Moutaouakil, D. Coquillat, W. Knap, T. Suemitsu, and T. Otsuji
  • Title : Gate fingers and device loading effect on terhartz detection from dual grating gate plasmon-resonant structure using InGaP/InGaAs/GaAs material systems
  • Journal : PIERS: Progress in Electromagnetics Research Symposium, 3P2-8, Marrakesh, Morocco, March 20-23, 2011. (invited).
  • No. 399
  • Authors : T. Otsuji
  • Title : Terahertz emission, detection and modulation using two-dimensional plasmons in high-electron-mobility transistors featured by a dual-grating-gate structure
  • Journal : PIERS: Progress in Electromagnetics Research Symposium Proceedings, 3P2-7, pp. 1266-1271, Marrakesh, Morocco, March 20-23, 2011. (invited). [PIERS Online, Vol. 7, No. 1, 1-6, 2011.]
  • No. 398
  • Authors : M. Ryzhii, V. Ryzhii, T. Otsuji, and V. Mitin
  • Title : Terahertz and infrared detectors based on multiplegraphene layers with p-i-n junctions: device model and characteristics
  • Journal : PIERS: Progress in Electromagnetics Research Symposium, 3P2-5, Marrakesh, Morocco, March 20-23, 2011. (invited).
  • No. 397
  • Authors : Y. M. Meziani, E. Velazquez; E. Diez, N. Dyakonova, W. Knap. A. El Moutaouakil, K. Fobelets, T. Otsuji
  • Title : Detection of terahertz radiation from strained silicon modulation field effect transistor
  • Journal : PIERS: Progress in Electromagnetics Research Symposium, 3P2-4, Marrakesh, Morocco, March 20-23, 2011. (invited).
  • No. 396
  • Authors : T. Otsuji, S.A. Boubanga Tombet, S. Chan, T. Watanabe, A. Satou, and V. Ryzhii
  • Title : Amplified stimulated terahertz emission from optically pumped graphene
  • Journal : PIERS: Progress in Electromagnetics Research Symposium Proceedings, 2A3-1, pp. 517-519, Marrakesh, Morocco, March 20-23, 2011. (invited). [PIERS Online, Vol. 7, No. 4, 308-310, 2011.]doi:10.2529/PIERS100919020719
  • No. 395
  • Authors : 久保真人, 半田浩之, 姜顯澈, 福嶋哲也, 高橋良太, 鷹林将, 吹留博一, 末光哲也, 末光眞希, 尾辻泰一
  • Title : Si(001)基板上におけるグラフェンFET
  • Journal : 電子情報通信学会総合大会, C-10-2, 東京, March 14-17, 2011.
  • No. 394
  • Authors : V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, and V. Mitin
  • Title : Analytical Device Model for Graphene Bilayer Field-Effect Transistors Using Weak Nonlocality Approximation
  • Journal : J. Appl. Phys. Vol. 109, Iss. 6, pp. 064508-1-10, 2011. http://dx.doi.org/10.1063/1.3560921
  • No. 393
  • Authors : 谷川達也, 大西俊一, 瀧川信一, 尾辻泰一
  • Title : 無給電素子一体型ダイポールアンテナを用いたAlGaN/GaNプラズモン共鳴テラヘルツデテクタ
  • Journal : 電子情報通信学会総合大会, C-4-4, 東京, March 14-17, 2011.
  • No. 392
  • Authors : A. Satou, S. A. Boubanga Tombet, T. Otsuji, and V. Ryzhii
  • Title : Study of threshold behavior of stimulated terahertz emission from optically pumped graphene
  • Journal : OTST: Int. Conf. on Optical Terahertz Science and Technology, TuA3, Santa Barbara, CA, USA, March 13-17, 2011.
  • No. 391
  • Authors : S Boubanga-Tombet, F. Teppe, J. Torres, W.Knap and T. Otsuji
  • Title : Coherent and tunable terahertz emission from nano-metric field effect transistor at room temperature
  • Journal : OTST: Int. Conf. on Optical Terahertz Science and Technology, MF41, Santa Barbara, CA, USA, March 13-17, 2011.
  • No. 390
  • Authors : V.V. Popov, D.V. Fateev, T. Otsuji, Y.M. Meziani, D. Coquillat, and W. Knap
  • Title : Plasmonic detection of terahertz radiation in a double-grating-gate transistor structure with an asymmetric unit cell
  • Journal : Proc. International Symposium on Nanophysics and Nanoelectronics, pp. 121-122, Avtomobilist resort, Nizhny Novgorod, Russia, March 14-18, 2011.
  • No. 389
  • Authors : 尾辻泰一
  • Title : グラフェンの性質と応用
  • Journal : 未踏科学技術協会第59回特別講演会材料イノベーションシリーズ第11回講演予稿, pp. 1-35, 東京, March 9, 2011. (invited).
  • No. 388
  • Authors : 尾辻泰一
  • Title : グラフェンテラヘルツレーザー
  • Journal : 2011年電子情報通信学会電子デバイス研究会特別ワークショップ「ナノチューブ/グラフェンエレクトロニクス:成長からデバイス応用まで」講演予稿集, pp. 123-135, 東京, March 7, 2011. (invited).
  • No. 387
  • Title : グラフェン, イノベーション - 電子デバイスを変えるナノカーボン材料革命, 日経エレクトロニクス編, 日経BP社, 東京, Feb. 25, 2011. [尾辻泰一, 2.1 グラフェンの超高周波光, 電子デバイス応用, pp. 34-51.] [総ページ数:255] ISBN: 978-4-8222-0299-6
  • No. 386
  • Authors : 尾辻泰一
  • Title : グラフェンの光, 電子デバイス応用 ―現状と展望
  • Journal : 日経エレクトロニクス主催 Tech-One セミナー 「グラフェンの応用はどこまで可能か」, 東京, Jan. 28, 2011. (invited).
  • No. 385
  • Title : テラヘルツ波新産業, 斗内政吉監修, シーエムシー出版, 東京, Jan. 2011. [尾辻, 4章-4節 二次元プラズモン, pp. 77-82.] [総ページ数:280] ISBN: 978-4-7813-0289-8
  • No. 384
  • Authors : V.Ryzhii, M.Ryzhii, N.Ryabova, A.A.Dubinov, V.Ya.Aleshkin, V.Mitin, A.Satou, and T.Otsuji
  • Title : Concepts of graphene-based terahertz and infrared devices
  • Journal : FNST: in Nanoscale Science and Technology Workshop, P-14, RIKEN Wako Campus, Saitama, Japan, Jan. 5-7, 2011.
  • No. 383
  • Authors : A. El Moutaouakil, T. Suemitsu, T. Otsuji, H. Videlier, S.A. Boubanga-Tombet, D. Coquillat, and W. Knap
  • Title : Device loading effect on nonresonant detection of terahertz radiation in dual grating gate plasmon-resonant structure using InGaP/InGaAs/GaAs material systems
  • Journal : Phys. Stat. Solidi., Vol. 8, No. 2, pp. 346–348, 2011. / DOI 10.1002/pssc.201000569
  • No. 382
  • Authors : S. Boubanga-Tombet, F. Teppe, J. Torres, A. El Moutaouakil, D. Coquillat, N. Dyakonova, C. Consejo, P. Arcade, P. Nouvel, H. Marinchio, T. Laurent, C. Palermo, A. Penarier, T. Otsuji, L. Varani, and W. Knap
  • Title : Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors
  • Journal : Appl. Phys. Lett., Vol. 97, Iss. 26, 262108 (3 pages), 2010.doi:10.1063/1.3529464
  • No. 381
  • Authors : V. Ryzhii, M. Ryzhii, N. Ryabova, V. Mitin and T. Otsuji
  • Title : Terahertz and infrared detectors based on graphene structures
  • Journal : Infrared Physics and Technology, Vol. 54, Iss. 3, pp. 302-305, May 2011. online Dec. 27, 2010.doi:10.1016/j.infrared.2010.12.034
  • No. 380
  • Authors : S.A. Boubanga-Tombet, A. Satou, V. Ryzhii, and T. Otsuji
  • Title : Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors
  • Journal : 電子情報通信学会電子デバイス研究会技術報告, Vol. 110, pp. 35-39, 仙台, Dec. 16, 2010.
  • No. 379
  • Authors : 佐藤昭, ヴィクトール リズィー, ステファン ボウバンガ-トムベット, 尾辻泰一
  • Title : 光学励起グラフェンの非平衡キャリア緩和過程とテラヘルツ帯における反転分布
  • Journal : 電子情報通信学会電子デバイス研究会技術報告, Vol. 110, pp. 31-34, 仙台, Dec. 16, 2010.
  • No. 378
  • Authors : T. Otsuji, S. Chan, S.-A. Boubanga-Tombet, H. Karasawa, T. Watanabe, A. Satou, H. Fukidome, M. Suemitsu, and V. Ryzhii
  • Title : Observation of amplified stimulated terahertz emission from heteroepitaxial graphene-on-silicon materials
  • Journal : WINDS: Workshop on Innovative Devices and Systems, Hawaii, Dec. 5-10, 2010. (invited)
  • No. 377
  • Authors : K. Akagawa, S. Fukuda, T. Suemitsu, T. Otsuji, H. Yokohama, G. Araki
  • Title : Impact of T-gate electrode on gate capacitance in In0.7Ga0.3As HEMTs
  • Journal : Phys. Status Solidi.(c), Vol. 8, Iss. 2, pp. 300-302, 2011.doi: 10.1002/pssc.201000475
  • No. 376
  • Authors : 尾辻
  • Title : グラフェンチャネルトランジスタ
  • Journal : 応用物理, Vol. 79, No. 11, pp. 1005-1009, 2010.
  • No. 375
  • Authors : 尾辻
  • Title : THzアクティブプラズモニックメタマテリアル
  • Journal : 国際高等研プロジェクト「メタマテリアルの開発と応用」2010年度第2回研究会, けいはんなプラザ, 京都, Nov. 5th, 2010. (invited).
  • No. 374
  • Authors : A. El Moutaouakil, H.-C. Kang, H. Handa, F. Fukidome, T. Suemitsu, E. Sano, M. Suemitsu, and T. Otsuji
  • Title : Room temperature complimentary logic inverter on epitaxial graphene-on-silicon device
  • Journal : ISGD: Int. Symp. Graphene Devices, F2-03, pp. 92-93, Sendai, Japan, Oct. 29, 2010.
  • No. 373
  • Authors : Y. Takatsuka, E. Sano, V.I. Ryzhii, and T. Otsuji
  • Title : THz amplifiers based on multilayer graphene and field-enhancement structures
  • Journal : ISGD: Int. Symp. Graphene Devices, F3-02, pp. 100-101, Sendai, Japan, Oct. 29, 2010.
  • No. 372
  • Authors : M. Ryzhii, T. Otsuji, V. Mitin, and V. Ryzhii
  • Title : Characteristics of p-i-n terahertz and infrared photodiodes based on multiple graphene layer structures
  • Journal : ISGD: Int. Symp. Graphene Devices, T3-04, pp. 50-51, Sendai, Japan, Oct. 28, 2010.
  • No. 371
  • Authors : S. Boubanga-Tombet, S. Chan, A. Satou, T. Watanabe, and T. Otsuji
  • Title : Terahertz stimulated emission from optically pumped graphene
  • Journal : ISGD: Int. Symp. Graphene Devices, T3-05, pp. 52-53, Sendai, Japan, Oct. 28, 2010.
  • No. 370
  • Authors : M. Kubo, S. Takabayashi, R. Takahashi, S. Abe, T. Suemitsu, F. Fukidome, M. Suemitsu, and T. Otsuji
  • Title : Chemical bonds at interfaces between graphene and group-10 metals
  • Journal : ISGD: Int. Symp. Graphene Devices, T4-10, pp. 72-73, Sendai, Japan, Oct. 28, 2010.
  • No. 369
  • Authors : A. Satou, T. Otsuji, and V. Ryzhii
  • Title : Theoretical study of population inversion in graphene under pulse excitation
  • Journal : ISGD: Int. Symp. Graphene Devices, T4-14, pp. 80-81, Sendai, Japan, Oct. 28, 2010.
  • No. 368
  • Authors : H.-C. Kang, S. Takabayashi, K. Akagawa, T. Yoshida, S. Abe, R. Takahashi, F. Fukidome, T. Suemitsu, M. Suemitsu, and T. Otsuji
  • Title : DC and RF characteristics of graphene FETs formed by thermal decomposition of SiC grown on silicon substrates
  • Journal : ISGD: Int. Symp. Graphene Devices, W4-04, pp. 26-27, Sendai, Japan, Oct. 27, 2010.
  • No. 367
  • Authors : D. Svintsov, V. Vyurkov, V. Ryzhii, and T. Otsuji
  • Title : Effect o
  • Journal : mexican hat" on graphene bilayer field-effect transistor characteristics, " ISGD: Int. Symp. Graphene Devices, W4-05, pp. 28-29, Sendai, Japan, Oct. 27, 2010.
  • No. 366
  • Authors : S. Boubanga Tombet, S. Chan, A. Satou, T. Watanabe, V. Ryzhii, T. Otsuji
  • Title : Amplified stimulated terahertz emission at room temperature from optically pumped graphene
  • Journal : EOS Annual Meeting, TOM2_4011_10, Paris, France, Oct. 27, 2010.
  • No. 365
  • Authors : S. Boubanga Tombet, F. Teppe, W. Knap, and T. Otsuji
  • Title : Terahertz detection by field effect transistors: from non resonant to resonant detection
  • Journal : EOS Annual Meeting, TOM2_3645_02, Paris, France, Oct. 27, 2010.
  • No. 364
  • Authors : E. Sano, d T. Otsuji
  • Title : Performance Prediction of Complementary Field-Effect Transistor Circuits Using Graphene with Band Gap Induced by Site-Potential Asymmetry
  • Journal : Jpn. J. Appl. Phys., vol. 50, pp. 115101-1-6, Oct. 2011.DOI: 10.1143/JJAP.50.115101
  • No. 363
  • Authors : T. Otsuji, d W. Kna
  • Title : Wireless communication using terahertz plasmonic-nano ICT devices
  • Journal : GDR-I Workshop on Terahertz Science and Technology, Paris, France, Sept. 27-28, 2010. (invited).
  • No. 362
  • Authors : A. El Moutaouakil, H.-C. Kang, H.i Handa, H. Fukidome, T. Suemitsu, E. Sano, M. Suemitsu and T. Otsuji
  • Title : Epitaxial graphene-on-silicon logic inverter
  • Journal : SSDM: International Conference on Solid State Devices and Materials, J3-4, pp. 880-881, Tokyo, Japan, Sept. 22-24, 2010.
  • No. 361
  • Authors : A. Satou, T. Otsuji, and V. Ryzhii
  • Title : Study of hot carriers in optically pumped graphene
  • Journal : SSDM: International Conference on Solid State Devices and Materials, J3-5, pp. 882-883, Tokyo, Japan, Sept. 22-24, 2010.
  • No. 360
  • Authors : M. Ryzhii, T. Otsuji, V. Mitin, M.S. Shur, and V. Ryzhii
  • Title : Field-effect in multiple graphene layer structures
  • Journal : SSDM: International Conference on Solid State Devices and Materials, F1-3, pp. 87-88, Tokyo, Japan, Sept. 22-24, 2010.
  • No. 359
  • Authors : 谷本 雄大, 西村 拓也, 尾辻 泰一
  • Title : 二重回折格子型電極を有するHEMT構造における二次元プラズモン共鳴を利用したテラヘルツ帯電磁波の強度変調
  • Journal : 2010年秋季 第71回 応用物理学会学術講演会, 17a-F-2, 長崎, Sept. 14-17, 2010.
  • No. 358
  • Authors : 渡辺隆之, 谷本雄大, 尾辻泰一
  • Title : プラズモン共鳴型エミッタへのファブリペロー共振器構造の導入による放射特性変化
  • Journal : 2010年秋季 第71回 応用物理学会学術講演会, 17a-F-1, 長崎, Sept. 14-17, 2010.
  • No. 357
  • Authors : 久保真人, Hyun-Chul Kang, 高橋良太, 半田浩之, 鷹林 将, 吹留博一, 末光哲也, 尾辻泰一
  • Title : H2アニールによるエピタキシャルグラフェンの電気特性への影響
  • Journal : 2010年秋季 第71回 応用物理学会学術講演会, 15p-ZK-8, 長崎, Sept. 14-17, 2010.
  • No. 356
  • Authors : 鷹林 将, 高橋良太, 末光哲也, 吹留博一, 末光眞希, 尾辻泰一
  • Title : グラフェン/白金コンタクト界面の化学結合
  • Journal : 2010年秋季 第71回 応用物理学会学術講演会, 15p-ZK-9, 長崎, Sept. 14-17, 2010.
  • No. 355
  • Authors : 高塚 裕也, 佐野 栄一, リズィー ヴィクトール, 尾辻 泰一
  • Title : 利得媒質と電場増強効果を用いたテラヘルツ増幅器
  • Journal : 信学会ソサエティ大会, C-10-7, 大阪, Sept. 14-17, 2010.
  • No. 354
  • Authors : 佐藤昭, 尾辻泰一, リズィーヴィクトール
  • Title : グラフェンによるTHz波源
  • Journal : 信学会ソサエティ大会, CI-2-5, 大阪, Spet. 14-17, 2010. (invited).
  • No. 353
  • Authors : 尾辻
  • Title : グラフェンの光, 電子デバイス応用-現状と展望
  • Journal : 2010年秋季 第71回 応用物理学会学術講演会 特定領域研究企画「ナノチューブナノエレクトロニクスはどこまで進んだか」, 14a-B-7, 長崎, Sept. 14-17, 2010. (invited).
  • No. 352
  • Authors : Y.M. Meziani, E. Diez, E. Velazquez, K. Fobelets, A. El Moutaouakil and T. Otsuji
  • Title : Strained Silicon Modulation FET as New Sensor for Terahertz Radiation
  • Journal : ANM2010: 3rd Int. Conf. on Advanced Nano Materials, ANMM269, Agadir, Morocco, September 12-15, 2010.
  • No. 351
  • Authors : A. El Moutaouakil, T. Suemitsu, T. Otsuji, D. Coquillat, and W. Knap
  • Title : Nonresonant detection of terahertz radiation in high-electron mobility transistor structure using InAlAs/InGaAs/InP material systems at room temperature
  • Journal : ANM2010: 3rd Int. Conf. on Advanced Nano Materials, ANMM169, Agadir, Morocco, September 12-15, 2010.
  • No. 350
  • Authors : T. Otsuji
  • Title : Emission of terahertz radiation from two-eimensional electron systems in semiconductor nano-heterostructures
  • Journal : 35th International Conference on Infrared, Millimeter and THz Waves, " Th-D1.1, Rome, Italy, Sept. 6-11, 2010. (invited).DOI: 10.1109/ICIMW.2010.5612344
  • No. 349
  • Authors : A. El Moutaouakil, T. Suemitsu, T. Otsuji, D. Coquillat, and W. Knap
  • Title : Room temperature terahertz detection in high-electron-mobility transistor structure using InAlAs/InGaAs/InP material systems
  • Journal : 35th International Conference on Infrared, Millimeter and THz Waves, Tu-D3.5, Rome, Italy, Sept. 6-11, 2010.DOI: 10.1109/ICIMW.2010.5612344
  • No. 348
  • Authors : Nina Dyakonova, A. El Fatimy, Y. Meziani, T. Otsuji, D. Coquillat, W. Knap, F. Teppe, S. Vandenbrouk, K. Madjour, D. Theron, C. Gaquiere, M.A. Poisson, S. Delage
  • Title : Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors
  • Journal : 35th International Conference on Infrared, Millimeter and THz Waves, Tu-C1.4, Rome, Italy, Sept. 6-11, 2010.
  • No. 347
  • Authors : S. Boubanga Tombet, W. Knap, and T. Otsuji
  • Title : Field effect transistors for fast terahertz detection and imaging
  • Journal : 35th International Conference on Infrared, Millimeter and THz Waves, Tu-P.25, Rome, Italy, Sept. 6-11, 2010.
  • No. 346
  • Authors : Y. Meziani, A. El Moutaouakil, E. Velazquez, E. Diez, K. Fobelets, T. Otsuji
  • Title : Terahertz photomixing in Strained Silicon MODFET
  • Journal : 35th International Conference on Infrared, Millimeter and THz Waves, Mo-P.53, Rome, Italy, Sept. 6-11, 2010.
  • No. 345
  • Authors : M. Ryzhii, V. Ryzhii, T. Otsuji, V. Mitin, and M.S. Shur
  • Title : Electrically induced n-i-p junctions in multiple graphene layer structures
  • Journal : Phys. Rev. B, Vol. 82, pp. 075419-1-6, 2010.DOI: 10.1103/PhysRevB.82.075419
  • No. 344
  • Authors : T. Otsuji
  • Title : Observation of amplified stimulated terahertz emission from optically pumped graphene
  • Journal : ICOOPMA: Int. Conf. on Optical, Optoelectronic Photonic Materials and Applications Abstracts, p. 60, Budapest, Hungary, Aug. 15-20, 2010. (invited).
  • No. 343
  • Authors : A. El Moutaouakil, H.-C. Kang, H. Handa, H. Fukidome, T. Suemitsu, E. Sano, M. Suemitsu, and T. Otsuji
  • Title : Epitaxial Graphene-On-Silicon Logic Inverter
  • Journal : Int. Conf. on Recent Advances in Graphene and Related Materials, Singapore, Aug. 1-6, 2010.
  • No. 342
  • Authors : A. El Moutaouakil, T. Komori, K. Horiike, T. Suemitsu, and T. Otsuji
  • Title : Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter using InAlAs/InGaAs/InP Material Systems
  • Journal : IEICE Trans. Electron., Vol. E93C, No. 8, pp. 1286-1289, 2010.DOI: 10.1587/transele.E93.C.1286
  • No. 341
  • Authors : T. Otsuji, H. Karasawa, T. Watanabe, T. Suemitsu, M. Suemitsu, E. Sano, W. Knap, and V. Ryzhii
  • Title : Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-heterostructures
  • Journal : Comptes Rendus Physique, Vol. 11, Iss. 7-8, pp. 421-432, 2010.doi: 10.1016/j.crhy.2010.04.002
  • No. 340
  • Authors : T. Suemitsu
  • Title : Graphene channel FET: A new candidate for high-speed devices
  • Journal : AWAD 2010: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2B2, Tokyo, Japan, June 30-July 2, 2010. (invited).
  • No. 339
  • Authors : V. Ryzhii, M. Ryzhii, A. A. Dubinov, T. Otsuji, M. S. Shur, and V. Mitin
  • Title : Novel terahertz and infrared devices on multiple graphene structures: concepts and characteristics
  • Journal : VCIAN: Villa Conference on Interactions Among Nanostructures Abstracts, p. 31, Santorini, Greece, June 21-25, 2010. (invited).
  • No. 338
  • Authors : T. Otsuji, M. Suemitsu, E. Sano, and V. Ryzhii
  • Title : Emission of Terahertz Radiation from Two-Dimensional Electron Systems in Semiconductor Nano-Heterostructures
  • Journal : VCIAN: Villa Conference on Interactions Among Nanostructures Abstracts, p. 22, Santorini, Greece, June 21-25, 2010. (invited).
  • No. 337
  • Authors : Tatsuya Tanigawa, Toshikazu Onishi, Shinichi Takigawa and Taiichi Otsuji
  • Title : Enhanced responsivity in a novel AlGaN / GaN plasmon-resonant terahertz detector using gate-dipole antenna with parasitic elements
  • Journal : DRC: 68th Device Research Conf. Dig., IV.A-9, pp. 167-168, Notre Dame, IN, USA, June 21-25, 2010.
  • No. 336
  • Authors : R. Olac-vaw, H.-C. Kang, H. Karasawa, Y. Miyamoto, H. Handa, H. Fukidome, T. Suemitsu, M. Suemitsu, and T. Otsuji
  • Title : Ambipolar behavior in epitaxial graphene-based field-effect transistors on Si substrate
  • Journal : Jpn. J. Appl. Phys., vol. 49, No. 6, 06GG01 (5pages), 2010.DOI: 10.1143/JJAP.49.06GG01
  • No. 335
  • Authors : Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, and Taiichi Otsuji
  • Title : Epitaxial graphene top-gate FETs on silicon substrates
  • Journal : Solid-State Electron., Vol. 54, issue 10, pp. 1071-1075, 2010.doi:10.1016/j.sse.2010.05.030
  • No. 334
  • Authors : Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Tetsuya Suemitsu, Maki Suemitsu, and Taiichi Otsuji
  • Title : Epitaxial graphene field-effect transistors on silicon substrates
  • Journal : Solid-State Electron., Vol. 54, issue 9, pp. 1010-1014, 2010.doi:10.1016/j.sse.2010.04.018
  • No. 333
  • Authors : T. Otsuji
  • Title : Trends and future for graphene-based terahertz nano-photonics
  • Journal : ISTESNE: Int. Symp. on Technology Evolution for Silicon Nano-Electronics Extended Abstracts, p. 16, Tokyo, Japan, June 3-5, 2010. (invited).
  • No. 332
  • Authors : Amine El Moutaouakil, Tetsuya Suemitsu, Taiichi Otsuji, Hadley Videlier, Dominique Coquillat, Wojciech Knap
  • Title : Device loading effect on nonresonant detection of terahertz radiation in dual grating gate plasmon-resonant structure using InGaP/InGaAs/GaAs material systems
  • Journal : ISCS: Int. Symp. Compound Semicond. Dig., WED3-5, p. 274, Takamatsu, Japan, May 31-June 4, 2010.
  • No. 331
  • Authors : K. Akagawa, S. Fukuda, T. Suemitsu, T. Otsuji, H. Yokohama, G. Araki
  • Title : Impact of T-gate electrode on gate capacitance in In0:7Ga0:3As HEMTs
  • Journal : ISCS: Int. Symp. Compound Semicond. Dig., WED3-4, p. 273, Takamatsu, Japan, May 31-June 4, 2010.
  • No. 330
  • Title : Serge Luryi, Jimmy Xu, and Alexander Zaslavsky eds., Future Trends in Microelectronics: From Nanophotonics to Sensors to Energy [V. Ryzhii, M. Ryzhii, A. Satou, N. Ryabova, T. Otsuji, V. Mitin, F.T. Vasko, A.A. Dubinov, V.Y. Aleshkin, and M.S. Shur, Chapt. 3.5: "Graphene-based terahertz devices: consepts and characteristics, " pp. 293-306.], John Wiley & Sons, Inc.-IEEE Press, 431 pages, July 13, 2010. ISBN: 978-0-470-55137-0
  • No. 329
  • Authors : T. Nishimura, N. Magome, and T. Otsuji
  • Title : An intensity modulator for terahertz electromagnetic waves utilizing two-dimensional plasmon resonance in a dual-grating-gate high-electron-mobility transistors
  • Journal : Jpn. J. Appl. Phys., Vol. 49, No. 5, pp. 054301-1-7, 2010.DOI: 10.1143/JJAP.49.054301
  • No. 328
  • Authors : Hiromi Karasawa, Takayuki Watanabe, Taiichi Otsuji, Maxim Ryzhii, Akira Satou, Victor Ryzhii
  • Title : Observation of amplified stimulated terahertz emission in optically pumped epitaxial graphene heterostructures
  • Journal : CLEO: Conf. on Lasers and Electrooptics Dig., CMP3, San Jose, CA, USA, May 17-21, 2010.
  • No. 327
  • Authors : T. Otsuji
  • Title : Plasmon-resonant microchip emitters and detectors for terahertz sensing and spectroscopic applications
  • Journal : SPIE Defense Security and Sensing 2010, Conf. 7671: Terahertz Physics, Devices, and Systems IV: Advanced Applications in Industry and Defense, Proc. SPIE, vol. 7671, 767102 (12 pages), Orlando, FL, USA, April 5-6, 2010. (invited).
  • No. 326
  • Authors : H.-C. Kang, R. Olac-vaw, H. Karasawa, Y. Miyamoto, H. Handa, T. Suemitsu, H. Fukidome, M. Suemitsu, and T. Otsuji
  • Title : Extraction of drain current and effective mobility in epitaxial graphene channel field-effect transistors on SiC layer grown on silicon substrate
  • Journal : Jpn. J. Appl. Phys., Vol. 49, No. 4, 04DF17 (5 pages), 2010.DOI: 10.1143/JJAP.49.04DF17
  • No. 325
  • Authors : 尾辻
  • Title : テラヘルツICTの未来とそのデバイス技術
  • Journal : テラヘルツ電磁波産業利用研究会, 大阪科学技術センター, March 26, 2010. (invited).
  • No. 324
  • Authors : T. Otsuji, H. Karasawa, T. Komori, T. Watanabe, M. Suemitsu, A. Satou, and V. Ryzhii
  • Title : Stimulated terahertz emission from optically pumped epitaxial graphene-on-Si heterostructures
  • Journal : PIERS: Progress in Electromagnetics Research Symposium Proc., pp. 756-759, Xian'g, China, March 23-25, 2010. (invited).
  • No. 323
  • Authors : ヒョンチュル カン, 唐澤宏美, 宮本 優, 半田浩之, 末光哲也, 末光眞希, 尾辻泰一
  • Title : Si基板上グラフェンに形成したオーミック電極のコンタクト抵抗の評価
  • Journal : 第57回応物関係連合講演会予稿集, 20p-TD6, 東海大, 神奈川, March 17-19, 2010.
  • No. 322
  • Authors : 久保真人, Hyun-Chul Kang, 唐澤宏美, 宮本 優, 半田浩之, 吹留博一, 末光哲也, 末光眞希, 尾辻泰一
  • Title : シリコン基板上におけるトップゲート型エピタキシャルグラフェンFET
  • Journal : 第57回応物関係連合講演会予稿集, 20p-TD3, 東海大, 神奈川, March 17-19, 2010.
  • No. 321
  • Authors : 渡辺隆之, 小森常義, 末光哲也, 尾辻泰一
  • Title : プラズモン共鳴型エミッタのマルチチップ動作によるテラヘルツ分光測定
  • Journal : 第57回応物関係連合講演会予稿集, 19p-L4, 東海大, 神奈川, March 17-19, 2010.
  • No. 320
  • Authors : 唐澤宏美, 小森常義, 渡辺隆之, 末光眞希, リズィー ヴィクール, 尾辻泰一
  • Title : 光学励起グラフェンによるコヒーレントテラヘルツ放射の観測
  • Journal : 第57回応物関係連合講演会予稿集, 19a-L9, 東海大, 神奈川, March 17-19, 2010.
  • No. 319
  • Authors : A. El Motaouakil, T. Komori, S. Tetsuya, T. Otsuji, V. Hadley, S. BOoubanga Tombet, D. Coquillat, W. Knap
  • Title : Nonresonant detection of terahertz radiation in dual grating gate plasmon-resonant structure using InGaP/InGaAs/GaAs material systems
  • Journal : 第57回応物関係連合講演会予稿集, 19p-L16, 東海大, 神奈川, March 17-19, 2010.
  • No. 318
  • Authors : 赤川啓介, 福田俊介, 末光哲也, 尾辻泰一
  • Title : HEMTにおけるゲート電極形状と寄生遅延要因との関係
  • Journal : 第57回応物関係連合講演会予稿集, 19p-TK8, 東海大, 神奈川, March 17-19, 2010.
  • No. 317
  • Authors : Roman Olac-vaw, Hyun Chul Kang, Tsuneyoshi Komori, Tatayuki Watanabe, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, Vladimir Mitin, and Taiichi Otsuji
  • Title : Heteroepitaxial Graphene on a Si Substrate Field-Effect Transistor
  • Journal : APS March Meeting, Y21.00011, Portland, Oregon, March 15-19, 2010
  • No. 316
  • Authors : 松岡渉, 佐野栄一, 尾辻泰一
  • Title : グラフェンFETを用いたディジタル回路の性能予測
  • Journal : 信学総全大予稿集, C-10-13, 東北大, 仙台, March 16-20, 2010.
  • No. 315
  • Authors : 渡辺 隆之, 西村 拓也, 尾辻 泰一
  • Title : 二重格子状ゲート電極を有する高電子移動度トランジスタ構造における二次元プラズモン共鳴を利用したテラヘルツ電磁波の強度変調
  • Journal : 信学総全大予稿集, C-4-3, 東北大, 仙台, March 16-20, 2010.
  • No. 314
  • Authors : 末光哲也
  • Title : グラフェントランジスタの現状と展望
  • Journal : 信学総全大予稿集, CT-2-5, 東北大, 仙台, March 16-20, 2010. (invited).
  • No. 313
  • Authors : D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, T. Nishimura, T. Otsuji, Y. M. Meziani, G. M. Tsymbalov, and V. V. Popov
  • Title : Room temperature detection of sub-terahertz radiation in double-grating-gate transistors
  • Journal : Opt. Express, Vol. 18, iss. 6, pp. 6024–6032, 2010.DOI: 10.1364/OE.18.006024
  • No. 312
  • Authors : V. Ryzhii, M. Ryzhii, V. Mitin, and T. Otsuji
  • Title : Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures
  • Journal : J. Appl. Phys. Vol. 107, iss. 5, pp. 054512-1-7, 2010.DOI: 10.1063/1.3327441
  • No. 311
  • Authors : V. Ryzhii, A. Dubinov, T. Otsuji, V. Mitin, and M. S. Shur
  • Title : Terahertz lasers based on optically pumped multiple graphene structures with slot-line and dielectric waveguides
  • Journal : J. Appl. Phys. Vol. 107, iss. 5, pp. 054505-1-5, 2010.doi:10.1063/1.3327212
  • No. 310
  • Authors : 尾辻
  • Title : テラヘルツ, グラフェンデバイスの開発と展望
  • Journal : 応物テラヘルツ電磁波技術研究会信学会 テラヘルツ応用システム研究会共催 研究討論会 「テラヘルツ電子デバイスの新展開」予稿集, pp. 2-3, 秋保リゾート, ホテルクレセント, 仙台, Feb. 25-26, 2010. (invited).
  • No. 309
  • Authors : V. V. Popov, T. Yu. Bagaeva, T. Otsuji, and V. Ryzhii
  • Title : Oblique terahertz plasmons in graphene nanoribbon arrays
  • Journal : Phys. Rev. B, Vol. 81, 073404 (4pages), 2010.DOI: 10.1103/PhysRevB.81.073404
  • No. 308
  • Authors : A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K K. Madjour, D Théron, C Gaquiere, M. A. Poisson, S. Delage, P. Pristawko, C. Skierbiszewski
  • Title : AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
  • Journal : J. Appl. Phys., Vol. 107, Iss. 2, 024504-1-4, (2010).DOI: 10.1063/1.3291101
  • No. 307
  • Authors : R. Olac-vaw, H.-C. Kang, T. Komori, T. Watanabe, H. Karasawa, Y. Miyamoto, H. Handa, H. Fukidome, T. Suemitsu, M. Suemitsu and T. Otsuji
  • Title : Optoelectronic Application of Multi-layer Epitaxial Graphene on a Si Substrate
  • Journal : INEC2010: IEEE Int. NanoElectron. Conf., Paper No. EC132, pp. EC132-1-2, Hong Kong, Jan. 3-8, 2010.
  • No. 306
  • Authors : H.-C. Kang, H. Karasawa, Y. Miyamoto, H. Handa, H. Fukidome, T. Suemitsu, M. Suemitsu, and T. Otsuji
  • Title : Epitaxial graphene top-gate FETs on silicon substrates
  • Journal : ISDRS2009: Int. Semiconductor Device Research Symp. Proceedings, TP1-03, College Park, MD, USA, Dec. 9-11, 2009.
  • No. 305
  • Authors : W. Knap, S. Nadar, H. Videlier, S. Boubanga-Tombet, M. Sakowicz, D. Coquillat, N. Dyakonova, F. Teppe, A. El Fatimy, T. Otsuji, Y. M. Meziani, K. Karpierz, J. Łusakowski, D. Seliuta, I. Kasalynas, G. Valušis, G. M. Tsymbalov, and V. V. Popov
  • Title : Field Effect Transistors for Terahertz Detection
  • Journal : TeraTech'09: The Int. Workshop on Terahertz Technology 2009 Extended Abstract, pp. 143-146, Osaka, Japan, Nov. 30-Dec. 3, 2009. (invited).
  • No. 304
  • Authors : T. Otsuji
  • Title : Emission of terahertz radiation from two-dimensional electron systems in semiconductor nanoheterostructures
  • Journal : TeraTech'09: The Int. Workshop on Terahertz Technology 2009 Extended Abstract, pp. 147-150, Osaka, Japan, Nov. 30-Dec. 3, 2009. (invited).
  • No. 303
  • Authors : H. Karasawa, T. Komori, T. Watanabe, M. Suemitsu, V. Ryzhii, T. Otsuji
  • Title : Observation of THz Stimulated Emission in Optically Pumped Epitaxial Graphene Heterostructures
  • Journal : TeraTech'09: The Int. Workshop on Terahertz Technology 2009 Extended Abstract, pp. 339-340, Osaka, Japan, Nov. 30-Dec. 3, 2009.
  • No. 302
  • Authors : W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji
  • Title : Field effect transistors for terahertz detection: physics and first imaging applications
  • Journal : J. Infrared Milli. Terahz Waves, Vol. 30, No. 12, pp. 1319-1337, 2009.DOI: 10.1007/s10762-009-9564-9
  • No. 301
  • Authors : Takayuki Watanabe, Tsuneyoshi Komori, Tetsuya Suemitsu, and Taiichi Otsuji
  • Title : Multichip Operation of Plasmon-Resonant Microchip Emitters for Broadband Terahertz Spectroscopic Measurement
  • Journal : TeraTech'09: The Int. Workshop on Terahertz Technology 2009 Extended Abstract, pp. 203-204, Osaka, Japan, Nov. 30-Dec. 3, 2009.
  • No. 300
  • Authors : 唐澤, 渡辺, 小森, 末光, Ryzhi, 尾辻
  • Title : 光学励起グラフェンによるコヒーレントテラヘルツ放射の観測
  • Journal : 信学技報, Vol. 109, No. 313, (ED2009-167), pp. 53-58, Nov. 2009.
  • No. 299
  • Authors : 渡辺, 小森, 末光, 尾辻
  • Title : プラズモン共鳴型エミッタのマルチチップ動作によるテラヘルツ分光測定
  • Journal : 信学技報, Vol. 109, No. 313, (ED2009-167), pp. 47-51, Nov. 2009.
  • No. 298
  • Authors : 窪田, 佐野, メチアニ, 尾辻
  • Title : プラズモン共鳴テラヘルツエミッター光パルス応答のモンテカルロ解析
  • Journal : 信学技報, Vol. 109, No. 313, (ED2009-167), pp. 41-45, Nov. 2009.
  • No. 297
  • Authors : 尾辻
  • Title : 講義 光励起グラフェンにおける非平衡キャリアダイナミクス -新原理テラヘルツレーザーの可能性
  • Journal : テラヘルツテクノロジーフォーラム通信, Vol.7 No.1, p. 2, Nov. 30, 2009.
  • No. 296
  • Authors : V. Ryzhii, A. Satou, A.A. Dubinov, M. Ryzhii, N. Ryabova, V.Ya. Aleshkin, and T. Otsuji
  • Title : Possibility of terahertz lasing in optically excited multiple graphene layer structure
  • Journal : Int. Symp. on Quantum Nanophotonics and Nanoelectronics Abstracts, p. 101, Tokyo, Japan, Nov. 18-20, 2009. (invited).
  • No. 295
  • Authors : 尾辻
  • Title : グラフェン, オン, シリコン材料, デバイス技術の研究
  • Journal : H19発足「特定領域研究」カーボンナノチューブナノエレクトロニクスH21年度第1回研究会予稿集, pp. 55-58, 淡路夢舞台, Sept. 19-21, 2009.
  • No. 294
  • Authors : Roman Olac-vaw, Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, and Taiichi Otsuji
  • Title : Ambipolar behavior in epitaxial graphene based FETs on Si substrate
  • Journal : MNC2009: 22nd Int. Microprocesses and Nanotechnology Conf., 19A-8-3, pp. 440-441, Sapporo, Japan, Nov.
  • No. 293
  • Authors : V. Mitin, M. Ryzhii, T. Otsuji, N. Kirova, and V. Ryzhii
  • Title : Device models for graphene nanoribbon and graphene bilayer phototransistors
  • Journal : Int. Symp. Graphene Devices: Technology, Physics, and Modeling Tech. Dig., pp. 46-47, Aizu-Wakamatsu, Japan, Nov. 17-19, 2008.
  • No. 292
  • Authors : T. Otsuji
  • Title : Heteroepitaxial Graphene on Silicon: Process&Device Technology for Ultra-high Frequency Devices
  • Journal : MNC2009: 22nd International Microprocesses and Nanotechnology Conf. Dig. Papers, 17B-3-2, pp. 50-51, Sapporo, Japan, Nov. 17, 2009. (invited).
  • No. 291
  • Authors : H-C Kang, T Nishimura, T Komori, T Mori, N Watanabe, T Asano, and T Otsuji
  • Title : 3D-integration of a log spiral antenna onto a dual grating-gate plasmon-resonant terahertz emitter for high-directivity radiation
  • Journal : J. Phys.: Conf. Ser., Vol. 193, 012070(4pages), Nov. 2009.DOI: 10.1088/1742-6596/193/1/012070
  • No. 290
  • Authors : Y M Meziani, T. Nishimura, H Tsuda, T Tsuemitsu, W. Knap, V V Popov, and T Otsuji
  • Title : Enhancement of terahertz radiation by CW infrared laser excitation in a doubly interdigitated grating gates transistors
  • Journal : J. Phys.: Conf. Ser., Vol. 193, 012071(4pages), Nov. 2009.DOI: 10.1088/1742-6596/193/1/012071
  • No. 289
  • Authors : A El Fatimy, T Suemitsu, T Otsuji, N Dyakonova, W Knap, Y M Meziani, C Gaquiere, A Cappy, M Leszczynski, P Dybko, C Skierbiszewski5, T Suski, S Porowski
  • Title : Tunable room temperature terahertz source based on two-dimensional plasma instability in GaN HEMT
  • Journal : J. Phys.: Conf. Ser., Vol. 193, 012072(4pages), Nov. 2009.DOI: 10.1088/1742-6596/193/1/012072
  • No. 288
  • Authors : D Coquillat, S Nadar, F Teppe, N Dyakonova, S Boubanga-Tombet, W Knap, T Nishimura, Y M Meziani, T Otsuji, V V Popov, and G M Tsymbalov
  • Title : Terahertz detection in a double-grating-gate heterotransistor
  • Journal : J. Phys.: Conf. Ser., Vol. 193, 012074(4pages), Nov. 2009.DOI: 10.1088/1742-6596/193/1/012074
  • No. 287
  • Authors : A. El Moutaouakil, T. Watanabe, C. Haibo, T. Komori, T. Suemitsu, and T. Otsuji
  • Title : Spectral narrowing of terahertz emission from super-grating dual-gate plasmon-resonant high-electron mobility transistors
  • Journal : J. Phys.: Conf. Ser., Vol. 193, 012068 (4pages), Nov. 2009.DOI: 10.1088/1742-6596/193/1/012068
  • No. 286
  • Authors : 尾辻
  • Title : グラフェン, オン, シリコン材料, デバイス技術
  • Journal : 第38回薄膜, 表面物理基礎講座 「カーボン系材料の新展開 基礎と応用」, pp. 31-40, 早稲田, Nov. 5, 2009.
  • No. 285
  • Authors : T. Otsuji, H. Karasawa, T. Watanabe, T. Komori, M. Suemitsu, M. Ryzhii, and V. Ryzhii
  • Title : Obervation of coherent terahertz emission from optically pumped epitaxial graphene heterostructures
  • Journal : IWPMTPD: International Workshop on Physics and Modeling of Terahertz Plasmonic Devices, Univ. Aizu, Aizu-Wakamatsu, Nov. 2-4, 2009. (invited).
  • No. 284
  • Authors : Y. M. Meziani, T. Nishimura, H. Handa, H. Tsuda, and T. Suemitsu, W. Knap, T. Otsuji, E. Sano, G. M. Tsymbalov and V. V. Popov
  • Title : Efficiency enhancement of emission of terahertz radiation by optical excitation from dual grating gate HEMT
  • Journal : J. Nanophoton., Vol. 3, 031980 (2009);doi:10.1117/1.3266497
  • No. 283
  • Authors : T. Otsuji, Y. Tsuda, T. Komori, A. El Fatimy, and T. Suemitsu
  • Title : Terahertz plasmon-resonant microchip emitters and their possible sensing and spectroscopic applications
  • Journal : IEEE SENSORS 2009 Conf., C5L-B4, pp. 1991-1996, Christchurch, New Zealand, Oct. 28, 2009. (invited).DOI: 10.1109/ICSENS.2009.5398309
  • No. 282
  • Authors : V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, A. A. Dubinov and V. Y. Aleshkin
  • Title : Feasibility of terahertz lasing in optically pumped epitaxial multiple graphene layer structures
  • Journal : J. Appl. Phys. Vol. 106, Iss. 8, pp. 084507-1-6, 2009. http://dx.doi.org/10.1063/1.3247541
  • No. 281
  • Authors : 尾辻
  • Title : メタマテリアルのテラヘルツデバイスへの応用
  • Journal : 光技術コンタクト, Vol. 47, No. 10, pp. 528-536, Oct. 2009.
  • No. 280
  • Authors : A. Dubinov, V. Aleshkin, M. Ryzhii, T. Otsuji, and V. Ryzhii
  • Title : Terahertz Laser on Optically Pumped Graphene: Concept and its Substantiation
  • Journal : SSDM 2009: Int. Conf. Solid-State Devices and Materials, I-2-8, pp. 226-227, Sendai, Japan, Oct. 7-9, 2009.
  • No. 279
  • Authors : K. Kubota, E. Sano, T. Otsuji, and Y.M. Meziani
  • Title : Monte Carlo analysis of optical pulse response for plasmon-resonant terahertz emitter
  • Journal : SSDM 2009: Int. Symp. Solid-State Devices and Materials, Late News, pp. 814-815, Sendai, Japan, Oct. 7-9, 2009.
  • No. 278
  • Authors : H.-C. Kang, R. Olac-vaw, H. Karasawa, Y. Miyamoto, H. Handa, T. Suemitsu, H. Fukidome, M. Suemitsu, and T. Otsuji
  • Title : Extraction of drain current and effective mobility in epitaxial graphene channel FETs on silicon substrate
  • Journal : SSDM 2009: Int. Conf. Solid-State Devices and Materials, J-5-1, pp. 954-955, Sendai, Japan, Oct. 7-9, 2009.
  • No. 277
  • Authors : V. Ryzhii, M. Ryzhii, A. Satou, A. El Moutaouakil, and T. Otsuji
  • Title : Self-Excitation of Terahertz Plasma Oscillations in Optically Pumped Graphene
  • Journal : SSDM 2009: Int. Conf. Solid-State Devices and Materials, G-9-5, pp. 1232-1233, Sendai, Japan, Oct. 7-9, 2009.
  • No. 276
  • Authors : 松岡 渉, 佐野栄一, 尾辻泰一
  • Title : 両極性電界効果トランジスタを用いた論理回路の解析
  • Journal : 電子情報通信学会2009年ソサエティ大会予稿集, C-10-10, pp. #-#, 新潟, Sept. 17, 2009.
  • No. 275
  • Authors : 窪田健太郎, 佐野栄一, 尾辻泰一, Yahya Moubarak Meziani
  • Title : HEMT光パルス応答のモンテカルロ解析
  • Journal : 電子情報通信学会2009年ソサエティ大会予稿集, C-10-8, pp. #-#, 新潟, Sept. 17, 2009.
  • No. 274
  • Authors : 久保真人, 小森常義, 津田祐樹, チェンハイボー, 末光哲也, 尾辻泰一
  • Title : 二次元共鳴プラズモンを利用したテラヘルツ帯光源デバイス
  • Journal : 電子情報通信学会2009年ソサエティ大会予稿集, C-4-7, pp. #-#, 新潟, Sept. 16, 2009.
  • No. 273
  • Authors : H.-C. Kang, H. Karasawa, Y. Miyamoto, H. Handa, T. Suemitsu, M. Suemitsu, and T. Otsuji
  • Title : Epitaxial graphene field-effect transistors on silicon substrate
  • Journal : ESSDERC2009: 39th European Solid-State Device Research Conf., Paper ID 3422, pp. 189-192, Athens, Greese, Sept. 15, 2009.
  • No. 272
  • Authors : 赤川啓介, 福田俊介, 末光哲也, 尾辻泰一
  • Title : HMDS液体気化導入を用いたプラズマCVD法によるSiN絶縁膜形成
  • Journal : 第70回応用物理学会学術講演会講演予稿集, 10a-TH-9, Vol. 3, p. 1293, 富山, Sept. 10, 2009.
  • No. 271
  • Authors : 福田俊介, 堀池恒平, 赤川啓介, 末光哲也, 尾辻泰一
  • Title : InGaAsチャネルHEMTにおけるゲート遅延時間解析モデルの比較
  • Journal : 第70回応用物理学会学術講演会講演予稿集, 9a-TE-5, Vol. 3, p. 1307, 富山, Sept. 9, 2009.
  • No. 270
  • Authors : 唐澤宏美, 小森常義, 渡辺隆之, 末光眞希, リズィー ヴィクトール, 尾辻泰一
  • Title : 光励起グラフェンにおけるキャリア緩和, 放射再結合過程の観測
  • Journal : 第70回応用物理学会学術講演会講演予稿集, 10a-M-7, Vol. 3, p. 1035, 富山, Sept. 10, 2009.
  • No. 269
  • Authors : 久保真人, 津田祐樹, 小森常義, ハイボー チェン, 末光哲也, 尾辻泰一
  • Title : 二次元プラズモン共鳴を利用したテラヘルツ帯光源デバイスと分光測定応用
  • Journal : 第70回応用物理学会学術講演会講演予稿集, 9a-M-12, Vol. 3, p. 1026, 富山, Sept. 9, 2009.
  • No. 268
  • Authors : 渡辺隆之, アブデル エルファティミ, 小森常義, 末光哲也, 尾辻泰一
  • Title : 二次元プラズモン共鳴型テラヘルツエミッタにおける注入同期発振の検討
  • Journal : 第70回応用物理学会学術講演会講演予稿集, 9a-M-10, Vol. 3, p. 1026, 富山, Sept. 9, 2009.
  • No. 267
  • Authors : 小森常義, アミン エル, 渡辺隆之, 堀池恒平, 末光哲也, 尾辻泰一
  • Title : InP系材料を用いた二次元プラズモン共鳴型エミッターによる室温テラヘルツ電磁波放射
  • Journal : 第70回応用物理学会学術講演会講演予稿集, 9a-M-8, Vol. 3, p. 1025, 富山, Sept. 9, 2009.
  • No. 266
  • Authors : 姜顯澈, 唐澤宏美, 宮本優, 半田浩之, 末光哲也, 吹留博一, 末光眞希, 尾辻泰一
  • Title : エピタキシャルグラフェン電界効果トランジスター
  • Journal : 第70回応用物理学会学術講演会講演予稿集, 8a-TC-4, Vol. 3, p. 1299, 富山, Sept. 8, 2009.
  • No. 265
  • Authors : E. Sano, d T. Otsuji
  • Title : Bandgap engineering of bilayer graphene for field-effect transistor channels
  • Journal : Jpn. J. Appl. Phys., vol. 48, pp. 091605-1-3, Sept. 2009.DOI: 10.1143/JJAP.48.091605
  • No. 264
  • Authors : V. Ryzhii, M. Ryzhii, A. Satou, El. -M. Amine, and T. Otsuji
  • Title : Self-excitation of terahertz plasma oscillations in optically pumped graphene-based heterostructures
  • Journal : 8th Topical Workshop on Heterostructure Microelectronics (TWHM) Abstracts, Fr-B6, Nagano, Japan, Aug. 28, 2009.
  • No. 263
  • Authors : A. E. Moutaouakil, T. Komori, K. Horiike, T. Suemitsu, and T. Otsuji
  • Title : Room temperature intense terahertz emission from dual grating gate plasmon-resonant emitter using InAlAs/InGaAs/InP material systems
  • Journal : 8th Topical Workshop on Heterostructure Microelectronics (TWHM) Abstracts, Fr-B5, Nagano, Japan, Aug. 28, 2009.
  • No. 262
  • Authors : H.-C. Kang, T. Nishimura, T. Otsuji, T. Mori, N. Watanabe, and T. Asano
  • Title : 3D-integration of a log spiralantenna onto a dual grating-gate plasmon-resonant terahertz emitter for high-directivity radiation
  • Journal : EDISON: 16th Int. Conf. on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures Dig., Th-P37, p. 239, Montpellier, Aug. 27, 2009.
  • No. 261
  • Authors : D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, T. Nishimura, Y. M.Meziani, T. Otsuji, V. V. Popov, and G. M. Tsymbalov
  • Title : Terahertz detection in a double-grating-gateheterotransistor
  • Journal : EDISON: 16th Int. Conf. on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures Dig., We-B5, p. 175, Montpellier, Aug. 26, 2009.
  • No. 260
  • Authors : A. El Fatimy, T. Suemitsu, T. Otsuji, N. Dyakonova, W. Knap, Y. M.Meziani, C. Gaquiere, A. Cappy, M.Leszczynski, P. Dybko, C. Skierbiszewski, T. Suski, and S. Porowski
  • Title : Tunable terahertz source at roomtemperature based on GaN HEMT
  • Journal : EDISON: 16th Int. Conf. on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures Dig., Tu-B1, p. 73, Montpellier, Aug. 25, 2009.
  • No. 259
  • Authors : Y. M. Meziani, T. Nishimura, H. Tsuda, T. Suemitsu, T. Otsuji, W. Knap, and V. V. Popov
  • Title : Enhancementof terahertz radiation by CW infrared laser excitation in a doubly interdigitated grating gates transistors
  • Journal : EDISON: 16th Int. Conf. on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures Dig., Tu-A5, p. 69, Montpellier, Aug. 25, 2009.
  • No. 258
  • Authors : A. El Moutaouakil, T. Watanabe, C. Haibo, T. Komori, T. Suemitsu, and T. Otsuji
  • Title : Spectral narrowingof terahertz emission from super-grating dual-gate plasmon-resonant high-electron mobility transistors
  • Journal : EDISON: 16th Int. Conf. on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures Dig., Tu-A4, p. 68, Montpellier, Aug. 25, 2009.
  • No. 257
  • Authors : A. A. Dubinov, V. Y. Aleshkin, M. Ryzhii, T. Otsuji, and V. Ryzhii
  • Title : Terahertz laser with optically pumped graphene layers and Fabri–Perot resonator
  • Journal : Appl. Phys. Express, Vol. 2, Iss. 9, pp. 092301-1-3, Aug. 2009.
  • No. 256
  • Authors : T. Komori, Y. Tsuda, T. Suemitsu, and T. Otsuji
  • Title : Application of Plasmon-Resonant Microchip Emitters to Broadband Terahertz Spectroscopic Measurement
  • Journal : 電気関係学会東北支部連合大会講演論文集, p. #, 仙台, Aug. 20, 2009.
  • No. 255
  • Authors : M. Ryzhii, A. Satou, V. Ryzhii, V. Mitin, F.T. Vasko, V.Ya. Aleshkin, A.A. Dubinov, and T. Otsuji
  • Title : Graphene-based terahertz lasers and detectors: Physics and feasibility of realization
  • Journal : ESF-FWF Conf. Graphene Week 2009, Obergurgl, Austria, March 2-7, 2009.
  • No. 254
  • Authors : T. Otsuji
  • Title : Heteroepitaxial Graphene on Silicon: Process & Device Technology for Ultra-high Frequency Devices
  • Journal : Int. Conf. on Graphene Tokyo, p. 21, Tokyo, July 25-26, 2009. (invited)
  • No. 253
  • Authors : R. Olac‐vaw, H.-C. Kang, T. Komori, T. Watanabe, H. Karasawa, Y. Miyamoto, H. Handa, H. Fukidome, T. Suemitsu, M. Suemitsu, and T. Otsuji
  • Title : Epitaxial graphene on Si substrate for infrared photodetection
  • Journal : Int. Conf. on Graphene Tokyo, p. 52, Tokyo, July 25-26, 2009.
  • No. 252
  • Authors : T. Watanabe, H. Karasawa, T. Komori, M. Suemitsu, V. Ryzhii, T. Otsuji
  • Title : Observation of carrier relaxation and recombination dynamics in optically pumped epitaxial graphene heterostructures
  • Journal : The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18) Abstract, Tu-eP112, p. 264, Kobe, July 19-23, 2009.
  • No. 251
  • Authors : A. Satou, V. Ryzhii, E.T. Vasko, T. Otsuji, V.Yu. Aleshkin, and A.A. Dubinov
  • Title : Terahertz/far-infrared lasing by utilization of population inversion in graphene under optical pumping
  • Journal : The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18) Abstract, Mo-eP116, p. 123, Kobe, July 19-23, 2009.
  • No. 250
  • Authors : 尾辻
  • Title : グラフェンデバイスの開発と今後の展望
  • Journal : 信学技報, Vol. 109, No. SDM-133, pp. 101-106, 東工大大岡山, July 17, 2009.
  • No. 249
  • Authors : M. Ryzhii, V. Ryzhii, T. Otsuji, and V. Mitin
  • Title : Graphene Nanoribbon and Graphene Bilayer Photodetectors: Models and Characteristi
  • Journal : , 14th International Conference on Narrow Gap Semiconductors and Systems, PTu-2, Sendai, 13th - 17th July 2009.
  • No. 248
  • Title : グラフェンの機能と応用展望, 斉木幸一朗, 徳本洋志 監修, シーエムシー出版, 東京, July. 2009. [尾辻, 第18章 グラフェンの超高周波光, 電子デバイス応用]
  • No. 247
  • Authors : E. Sano, d T. Otsuji
  • Title : Theoretical study on graphene field-effect transistors
  • Journal : AWAD 2009: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 1B2, Busan, Korea, June 24-26, 2009. (invited).
  • No. 246
  • Authors : E. Sano, d T. Otsuji
  • Title : Theoretical study on graphene field-effect transistors
  • Journal : 信学技報告, Vol. 101, No. ICD-137, pp. 53-58, June 2009.
  • No. 245
  • Authors : T. Otsuji, Y. Tsuda, H. Karasawa, T. Suemitsu, M. Suemitsu, E. Sano and V. Ryzhii
  • Title : Emission of terahertz radiation from two-dimensional electron systems in semiconductor nanoheterostructures
  • Journal : Proc. 19th Int. Symp. on Nanostructures: Physics and Technology, pp. 66-68, Minsk, Belarus, June 22, 2009. (invited)
  • No. 244
  • Authors : H. Karasawa, T. Komori, T. Watanabe, M. Suemitsu, V. Ryzhii, and T. Otsuji
  • Title : Observation of Carrier Relaxation and Recombination Dynamics in Optically Pumped Epitaxial Graphene Heterostructures Using Terahertz Emission Spectroscopy
  • Journal : Tech. Dig. CLEO-Europe: European Conference on Lasers and Electrooptics, CF8.3, Munich, Germany, June 19, 2009.DOI: 10.1109/CLEOE-EQEC.2009.5196405
  • No. 243
  • Authors : T. Tanigawa, T. Onishi, O. Imafuji, S. Takigawa, T. Otsuj
  • Title : AlGaN/GaN Plasmon-Resonant Terahertz Detectors with On-Chip Patch Antennas
  • Journal : Tech. Dig. CLEO: Conference on Lasers and Electrooptics, CThFF7, Baltimore, MD, June 18, 2009.DOI: 10.1364/CLEO.2009.CThFF7
  • No. 242
  • Authors : A. El Fatimy, Y. Tsuda, T. Komori, A. El Moutaouakil, K. Horiike, T. Suemitsu, and T. Otsuji
  • Title : Enhancement of Room-Temperature Terahertz Emission from a Double Grating-Gate Plasmon-Resonant Emitter
  • Journal : Tech. Dig. CLEO: Conference on Lasers and Electrooptics, CMPP7, Baltimore, MD, June 15, 2009.DOI: 10.1364/CLEO.2009.CMPP7
  • No. 241
  • Authors : Y. Tsuda, T. Komori, A. El Fatimy, Kouhei Horiike, T. Suemitsu, and T. Otsuji
  • Title : Application of plasmon-resonant microchip emitters to broadband terahertz spectroscopic measurement
  • Journal : J. Opt. Soc. America B, Vol. 26, No. 9, pp. A52-A57, 2009.DOI: 10.1364/JOSAB.26.000A52
  • No. 240
  • Authors : E. Sano, d T. Otsuji
  • Title : Source and drain structures for suppressing ambipolar characteristics of graphene field-effect transistors
  • Journal : Appl. Phys. Express, Vol. 2, Iss. 6, 061601(2009)(3pages).DOI: 10.1143/APEX.2.061601
  • No. 239
  • Authors : 尾辻
  • Title : プラズモン共鳴を利用したテラヘルツ帯光源デバイスとその分光計測への応用
  • Journal : 応用物理学会第43回光波センシング研究会予稿集, pp. 63-70, 東京, June 9, 2009. (invited).
  • No. 238
  • Authors : 尾辻
  • Title : グラフェンを用いた新原理テラヘルツレーザー
  • Journal : 微小光学研究会 テーマ: 「みらい微小光学」 Microoptics News, Vol. 27, No. 2, pp. 31-36, お台場科学未来館, May 19, 2009. (invited).
  • No. 237
  • Authors : V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, and N. Kirova
  • Title : Device model for graphene bilayer field-effect transistor
  • Journal : J. Appl. Phys. 105, 104510 (2009) (9 pages)DOI: 10.1063/1.3131686
  • No. 236
  • Authors : T. Nishimura, N. Magome, H.-C. Kang, T. Otsuji
  • Title : Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter
  • Journal : IEICE Trans. Electron. Vol. E92-C, No. 5, pp. 696-701, 2009.DOI: 10.1587/transele.E92.C.696
  • No. 235
  • Authors : T. Nishimura, N. Magome, I. Khmyrova, T. Suemitsu, W. Knap, and T. Otsuji
  • Title : Analysis of fringing effect on resonant plasma frequency in plasma wave devices
  • Journal : Jpn. J. Appl. Phys. Vol. 48, No. 4, pp. 04C096-1-4, 2009.DOI: 10.1143/JJAP.48.04C096
  • No. 234
  • Authors : S. Fukuda, T. Suemitsu, T. Otsuji, D.-H. Kim, and J.A. del Alamo
  • Title : Analysis of gate delay scaling in In0.7Ga0.3As-channel high electron mobility transistors
  • Journal : Jpn. J. Appl. Phys., Vol. 48, No. 4, pp. 04C086-1-4, 2009.DOI: 10.1143/JJAP.48.04C086
  • No. 233
  • Authors : V. Ryzhii, M. Ryzhii, N. Ryabova, V. Mitin, and T. Otsuji
  • Title : Graphene nanoribbon phototransistor: proposal and analysis
  • Journal : Jpn. J. Appl. Phys., Vol. 48, Issue 4, Part2, pp. 04C144-1-5, 2009.DOI: 10.1143/JJAP.48.04C144
  • No. 232
  • Authors : E. Sano, d T. Otsuji
  • Title : Theoretical evaluation of channel structure in graphene field-effect transistors
  • Journal : Jpn. J. Appl. Phys. Vol. 48, No.4, pp. 041202-1-5, 2009.DOI: 10.1143/JJAP.48.041202
  • No. 231
  • Authors : 姜顯澈, 唐澤宏美, 宮本優, 半田浩之, 末光哲也, 末光眞希, 尾辻泰
  • Title : Si基板上に形成したエピタキシャルグラフェンとそのトランジスタへの応用
  • Journal : 第56回応用物理学関係連合講演会講演予稿集, p. 158, 筑波大学, 2009.4.1.
  • No. 230
  • Authors : 渡辺, チェン, 小森, 尾辻
  • Title : 二次元プラズモン共鳴型マイクロチップエミッタのテラヘルツ電磁波放射機構の検討
  • Journal : 2009年春季 第56回応用物理学関係連合講演会講演予稿集, Vol. 3, p. 1161, 筑波, Mar. 31, 2009.
  • No. 229
  • Authors : T. Otsuji, T. Nishimura, Y. Tsuda, T. Komori, A. El Fatimy, Y. M. Meziani, T. Suemitsu, E. Sano
  • Title : Plasmon-Resonant Microchip Emitters and their Applications to Terahertz Spectroscopy
  • Journal : PIERS: Progress In Electromagnetics Research Symposium Proceedings, pp. 11-15, Beijing, China, Mar. 23-27, 2009. (invited) [PIERS Online, Vol. 5, No. 4, 341-345, 2009.]
  • No. 228
  • Authors : Y. Tsuda, T. Komori, H. Chen, T. Suemitsu, and T. Otsuji
  • Title : Application of plasmonic microchip emitters to broadband terahertz spectroscopic measurement
  • Journal : OTST 2009: International Workshop on Terahertz Science and Technology, Tu-A-3, Santa Barbara, CA, USA, Mar. 7-11, 2009.
  • No. 227
  • Authors : 松岡, 佐野, 尾
  • Title : グラフェン-チャネルFETを用いた論理回路の解析
  • Journal : 電子情報通信学会総合大会講演論文集, p. 88, March 2009.
  • No. 226
  • Authors : T. Otsuji, T. Nishimura, Y. Tsuda, Y.M. Meziani, T. Suemitsu, and E. Sano
  • Title : Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's
  • Journal : Int. J. High Speed Electron. Sys., Vol. 19, Iss. 1, pp. 33-53, 2009.DOI: 10.1142/S0129156409006072
  • No. 225
  • Authors : 尾辻 泰一, 末光 哲也, 姜 顯澈, 唐澤 宏美, 宮本 優, 半田 浩之, 末光 眞希, 佐野 栄一, リズィー マキシム, リズィー ヴィクトール
  • Title : Si基板上に形成したエピタキシャルグラフェンとその電子デバイス応用
  • Journal : 信学技報, Vol. 108, No. 437, pp. 1-6, 北大, Feb. 2009. (invited).
  • No. 224
  • Authors : A. Satou, M. Ryzhii, F. T. Vasko, T. Otsuji, and V. Ryzhii
  • Title : Graphene under optical pumping: nonequilibrium distributions, population inversion, and terahertz lasing
  • Journal : SPIE Photonic West 2009, San Jose, CA, USA, Jan. 24-29, 2009.
  • No. 223
  • Authors : E. Sano, d T. Otsuji
  • Title : Performance prediction of graphene-channel field-effect transistors
  • Journal : Jpn. J. Appl. Phys., Vol. 48, No. 1, pp. 011604-1-4, Jan. 2009.DOI: 10.1143/JJAP.48.011604
  • No. 222
  • Authors : 堀池 恒平, 福田 俊介, 赤川 啓介, 末光 哲也, 尾辻 泰一
  • Title : InGaAsチャネルHEMTの寄生ゲート遅延に及ぼすゲート電極構造の影響
  • Journal : 信学技報 ED-08(376), pp. 77-81, Jan. 2009.
  • No. 221
  • Authors : エルファティミ アブデルアハド, 末光 哲也, 尾辻 泰一, モネア ピー, デラネ ジェイ, クナップ ウォイチェック, ディアコノワ ニーナ,
  • Title : ナノメートルサイズトランジスタにおける2次元プラズマ発振を利用した放射, 検出とそれらのテラヘルツイメージングへの応用
  • Journal : 信学技報 ED-108(369), pp. 47-52, Dec. 2008.
  • No. 220
  • Authors : 馬籠 伸紘, 西村 拓也, KHMYROVA Irina, 末光 哲也, KNAP Wojtek, 尾辻 泰一
  • Title : HEMTのテラヘルツ帯プラズマ共鳴に与える寄生ゲートフリンジ容量の影響
  • Journal : 信学技報 ED-108(369), pp. 53-58, Dec. 2008.
  • No. 219
  • Authors : T. Otsuji, T. Suemitsu, H. –C. Kang, H. Karasawa, Y. Miyamoto, H. Handa and M. Suemitsu
  • Title : Transistor operation of epitaxial graphene channel on silicon substrate with SiC backgate barrier layer
  • Journal : 13th Advanced Heterostructures and Nanostructures Workshop, Hawaii, USA, Dec. 7-12, 2008. (invited)
  • No. 218
  • Authors : Taiichi Otsuji, Yuki Tsuda, Tsuneyoshi Komori, Takuya Nishimura, Yahya M. Meziani, Abdelouahad El Fatimy, Tetsuya Suemitsu and Eiichi Sano
  • Title : Emission of terahertz radiation for spectroscopic applications utilizing two-dimensional plasmons in semiconductor heterostructures
  • Journal : 13th Advanced Heterostructures and Nanostructures Workshop, Hawaii, USA, Dec. 7-12, 2008. (invited)
  • No. 217
  • Authors : Taiichi Otsuji, T. Suemitsu, H. –C. Kang, H. Karasawa, Y. Miyamoto, H. Handa and M. Suemitsu
  • Title : Transistor Operation of Epitaxial Graphene Channel on Silicon Substrate with SiC Backgate Barrier Layer
  • Journal : 13th Advanced Heterostructures and Nanostructures Workshop, Hawaii, USA, Dec. 7-12, 2008.
  • No. 216
  • Authors : T. Otsuji
  • Title : Terahertz plasmonic microchip emitter/detector and their applications
  • Journal : LALS 2008: the Int'l Conference on Laser Applications in Life Science Abstract, p. S25-03, Taipei, Taiwan, Dec. 4-6, 2008. (invited)
  • No. 215
  • Authors : M. Ryzhii, A. Satou, V. Ryzhii, and T. Otsuji
  • Title : High-frequency properties of a graphene nanoribbon field-effect transistor
  • Journal : J. Appl. Phys. Vol. 104, pp. 114505-1-6, 2008.DOI: 10.1063/1.3029715
  • No. 214
  • Authors : Irina Khmyrova, Takuya Nishimura, Nobuhiro Magome, Tetsuya Suemitsu, and Taiichi Otsuji
  • Title : Frequency performance of plasmawave devices for THz applications and the role of fringing effects
  • Journal : 2008 IEEE 25th Convention of Electrical & Electronics Engineers in Israel (IEEEI 2008) Proc., pp. 650-653, Eilat, Islael, Dec. 3-5, 2008.
  • No. 213
  • Authors : H.-C. Kang, H. Karasawa, T. Suemitsu, Y. Miyamoto, M. Suemitsu, T. Otsuji
  • Title : Transistor operation of graphene channel on silicon substrated with SiC backgate barrier layer
  • Journal : Int. Symp. on Graphene Devices: Technlogy, Physics and Modeling Tech. Dig., pp. 30-31, Aizu-Wakamatsu, Nov. 17-19, 2008.
  • No. 212
  • Authors : V. Vyurkov, I. Semenikhin, M. Ryzhii, T. Otsuji, and V. Ryzhii
  • Title : Hydrodynamic model of a graphene field-effect transistor
  • Journal : Int. Symp. on Graphene Devices: Technlogy, Physics and Modeling Tech. Dig., pp. 32-33, Aizu-Wakamatsu, Nov. 17-19, 2008.
  • No. 211
  • Authors : W. Matsuoka, E. Sano, and T. Otsuji
  • Title : Graphene-channel FET characteristics disired for constructing logic circuits
  • Journal : Int. Symp. on Graphene Devices: Technlogy, Physics and Modeling Tech. Dig., pp. 34-35, Aizu-Wakamatsu, Nov. 17-19, 2008.
  • No. 210
  • Authors : T.Suemitsu, H.-C.Kang, H.Karasawa, Y.Miyamoto, H.Handa, M.Suemitsu, T.Otsuji
  • Title : Graphene/SiC/Si Group-IV Heterostructure Transistors
  • Journal : HETECH 2008 (17th European Heterostructure Technology Workshop), Venice, Italy, Nov. 3-5, 2008.
  • No. 209
  • Authors : V. Ryzhii, M. Ryzhii, A. Satou, and T. Otsuji
  • Title : Graphene nanoribbon field-effect transistor: device model and characteristics
  • Journal : Abst. Of the 2nd IEEE Nanotechnology Materials and Devices Conference, p. 62, Kyoto, Oct. 20-22, 2008.
  • No. 208
  • Authors : D. Coquillat, T. Nishimura, Y. Meziani, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, and T. Otsuji
  • Title : Room temperature terahertz detection from a new doubly interdigitated grating gate transistor
  • Journal : European Optical Society Topical Meeting on Terahertz Science and Technology as a part of the 2008 EOS Annual Meeting, pp. TOM2-2-1-2, Park Expo Convention Center, Paris, France, Sept. 29 - Oct. 2, 2008.
  • No. 207
  • Authors : A. El Fatimy, J.C. Delagnes, E. Abraham, E. Nguema, P. Mounaix, W. Knap, Y. Meziani and T. Otsuji
  • Title : Terahertz imaging based on a plasma-wave resonant detection of pulsed terahertz radiation by nanometric transistors
  • Journal : European Optical Society Topical Meeting on Terahertz Science and Technology as a part of the 2008 EOS Annual Meeting, pp. TOM2-4-1-2, Park Expo Convention Center, Paris, France, Sept. 29 - Oct. 2, 2008.
  • No. 206
  • Authors : T. Otsuji
  • Title : Emission of terahertz radiation from 2D-plasmon resonance in dual-grating-gate high electron mobility transistors
  • Journal : Workshop of GDR-E "Semiconductor sources and detectors of THz frequencies, " Paris, France, Sept. 25-26, 2008. (invited).
  • No. 205
  • Authors : V.Ryzhii, M.Ryzhii, N.Ryabova, V.Mitin, and T.Otsuj
  • Title : Graphene nanoribbon phototransistor: proposal and analysis
  • Journal : Ext. Abst. of the 2008 Int. Conf. on Solid State Device and Materials, p.190, Tsukuba, Sept.24-26, 2008.
  • No. 204
  • Authors : M. Ryzhii, A. Satou, T. Otsuji, and V. Ryzhi
  • Title : Dynamic characteristics of graphene nanoribbon field-effect transistors
  • Journal : Ext. Abst. of the 2008 Int. Conf. on Solid State Device and Materials, p.598, Tsukuba, Sept.24-26, 2008.
  • No. 203
  • Authors : S. Fukuda, T. Suemitsu, T. Otsuji, D.-H. Kim, and J.A. del Alamo
  • Title : Analysis of Gate Delay Scaling in In0.7Ga0.3As-Channel HEMTs
  • Journal : 2008 International Conference on Solid State Devices and Materials, G-2-4, Tsukuba, Ibaraki, Japan, Sept. 23-26, 2008.
  • No. 202
  • Authors : T. Nishimura, N. Magome, I. Khmyrova, T. Suemitsu, W. Knap, and T. Otsuji
  • Title : Effect of Nonideality of the Gate-2DEG Channel Capacitance on the Frequency of Plasma Oscillations in the Plasma Wave Devices
  • Journal : 2008 International Conference on Solid State Devices and Materials, G-2-6, Tsukuba, Ibaraki, Japan, Sept. 23-26, 2008.
  • No. 201
  • Authors : 西村, 馬籠, 尾辻
  • Title : 超周期回折格子型ゲート電極を有するプラズモン共鳴型エミッターの数値解析的検討
  • Journal : 電子通信情報学会ソサイエティ大会エレクトロニクス講演論文集2, p. 54, 明治大学, 川崎, Sept. 16-19, 2008.
  • No. 200
  • Authors : 尾辻
  • Title : ミリ波, テラヘルツ波電子デバイス技術の動向
  • Journal : 電子通信情報学会ソサイエティ大会 MWPシンポジウム「マイクロ波, ミリ波フォトニクスを支えるデバイス, サブシステム技術」(CS-5)エレクトロニクス講演論文集1, pp. S75-S76, 明治大学, 川崎, Sept. 16-19, 2008. (invited).
  • No. 199
  • Authors : A. El Fatimy, E. Abraham, E. Nguema, P. Mounaix, F.Teppe, W. Knap and T. Otsuji
  • Title : Room Temperature Terahertz Imaging by a GaAs-HEMT Transistor Associated with a THz Time Domain Spectrometer
  • Journal : 33rd International Conference on Infrared, Millimeter, and Terahertz Waves, PID675439, CalTech, Pasadena, CA, USA, Sept. 15-19, 2008.
  • No. 198
  • Authors : Y. M. Meziani, T. Nishimura, H. Handa, W. Knap, T. Otsuji, E. Sano, V. V. Popov, D. Coquillat, and F. Teppe
  • Title : Room temperature generation of terahertz radiation from dual grating gate HEMT’s
  • Journal : 33rd International Conference on Infrared, Millimeter, and Terahertz Waves, M5-D12, CalTech, Pasadena, CA, USA, Sept. 15-19, 2008.
  • No. 197
  • Authors : A. Satou, N. Vagidov, V. Mitin, T. Otsuji and V. Ryzhii
  • Title : Effect of contacts on the terahertz plasma resonances in two-dimensional electron systems
  • Journal : 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 197-200, Hakone, Japan, Sept. 9-11, 2008.
  • No. 196
  • Authors : 小森, 津田, チェン, メチアニ, 尾辻
  • Title : 二次元プラズモン共鳴型エミッターによるTHz領域における分光の検討
  • Journal : 第69回応用物理学会学術講演会講演予稿集, p. 984, 中部大学, 愛知, Sept. 2-5, 2008.
  • No. 195
  • Authors : 唐澤, 尾辻, リズィー, リズィー
  • Title : グラフェンの常温テラヘルツ帯負性伝導率
  • Journal : 第69回応用物理学会学術講演会講演予稿集, p. 980, 中部大学, 愛知, Sept. 2-5, 2008.
  • No. 194
  • Authors : 福田, 末光, 尾辻, Kim, del Alamo
  • Title : サブ100nm In0.7Ga0.3As HEMTにおけるゲート真性遅延時間解析
  • Journal : 第69回応用物理学会学術講演会講演予稿集, p. 1263, 中部大学, 愛知, Sept. 2-5, 2008.
  • No. 193
  • Authors : 堀池, 福田, 末光, 尾辻
  • Title : 短ゲートInGaAs チャネルHEMT の寄生遅延におけるT 型ゲートの影響
  • Journal : 第69回応用物理学会学術講演会講演予稿集, p. 1263, 中部大学, 愛知, Sept. 2-5, 2008.
  • No. 192
  • Authors : V. Ryzhii, A. Satou, M. Ryzhii, T. Otsuji, and M. S. Shur
  • Title : Mechanism of self-excitation of terahertz plasma oscillations in periodically double-gated electron channels
  • Journal : J. Phys.: Condens. Matters, Vol. 20, 384207, Aug. 2008. (invited).DOI: 10.1088/0953-8984/20/38/384207
  • No. 191
  • Authors : T. Otsuji, Y. M. Meziani, T. Nishimura, T. Suemitsu, W. Knap, E. Sano, T. Asano, V.V. Popov
  • Title : Emission of terahertz radiation from dual grating gates plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems
  • Journal : J. Phys.: Condens. Matter, Vol. 20, 384206(11p), Aug. 2008. (invited).doi:10.1088/0953-8984/20/38/384206
  • No. 190
  • Authors : S. Fukuda, T. Suemitsu, T. Otsuji, D.-H. Kim, J.A. del Alamo
  • Title : Parasitic Delay on Sub-100-nm-Gate In07Ga03As HEMT
  • Journal : 電気関係学会東北支部連合大会講演論文集, p. 35, 日大工学部, 郡山, 福島, Aug. 21-22, 2008.
  • No. 189
  • Authors : H. Karasawa, T. Otsuji, M. Ryzhii, V. Ryzhii
  • Title : Negative dynamic conductivity of graphene at room temperature
  • Journal : 電気関係学会東北支部連合大会講演論文集, p. 41, 日大工学部, 郡山, 福島, Aug. 21-22, 2008.
  • No. 188
  • Authors : H. Chen, T. Komori, Y. Tsuda, Y. Meziani, T. Otsuji
  • Title : Plasmon-resonant terahertz microchip source and its application to spectroscopy for vapor absorption at room temperature
  • Journal : 電気関係学会東北支部連合大会講演論文集, p. 49, 日大工学部, 郡山, 福島, Aug. 21-22, 2008.
  • No. 187
  • Authors : T. Otsuji
  • Title : Plasmonic metamaterials and their applications in novel terahertz devices
  • Journal : SPIE Plasmonics: Nanoimaging, Nanofabrication, and their Applications IV conference as part of the Optics and Photonics Congress, San Diego, CA, USA, Sept. Aug. 10-14, 2008. (invited); Proceedings of SPIE, vol. 7033, pp. 70331H-1-14, 2008.DOI: 10.1117/12.792935
  • No. 186
  • Authors : T. Otsuji
  • Title : Emission and Intensity Modulation of Terahertz Electromagnetic Radiation Utilizing 2-Dimensional Plasmons in Dual-Grating-Gate HEMT’s
  • Journal : Lester Eastman Conference on High Performance Devices, Univ. Delaware, DE, USA, Aug. 5-7, 2008. (invited).
  • No. 185
  • Authors : V. Mitin, N. Ryabova, M. Ryzhii, T. Otsuji, and V. Ryzhii
  • Title : Graphene nanoribbon phototransistors: principle of operation, device model, and characteristics
  • Journal : 29th Int. Conf. on Physics of Semiconductors (ICPS-29), p.145, Rio de Janeiro, Brazil, Jul.27 - Aug.1, 2008.
  • No. 184
  • Authors : 尾辻
  • Title : シリコン上のグラフェンによる高性能集積化デバイス
  • Journal : 電気学会「超集積化, 環境CMOSデバイス調査専門委員会」, 「化合物半導体電子デバイス調査専門委員会」合同委員会, 東京, July 25, 2008. (invited).
  • No. 183
  • Authors : T. Otsuji
  • Title : Plasmonic Metamaterials and their Applications in Novel Terahertz Devices
  • Journal : 2nd TOYOTA Metamaterials Conference, Midland Square, Nagoya Japan, July 23, 2008. (invited).
  • No. 182
  • Authors : V.G. Leiman, V. Ryzhii, M. Ryzhii, A. Satou, N. Ryabova, T. Otsuji, M. Shur
  • Title : Analysis of resonant detection of terahertz radiation in high-electron mobility transistor with a nanostring/carbon nanotube as mechanically floating gate
  • Journal : J. Appl. Phys., Vol. 104, Iss. 024514 pp. 1-7, July 2008.DOI: 10.1063/1.2957589
  • No. 181
  • Authors : V. Ryzhii, M. Ryzhii, N. Ryabova, V. Mitin and T. Otsuji
  • Title : Far infrared and terahertz devices based on graphene heterostructures
  • Journal : Int. Symp. on "Nanostructures: Physics and Technology," pp. 1-4, Vladivostok, Russia, July 14-18, 2008.
  • No. 180
  • Authors : T. Otsuji
  • Title : Emission of terahertz radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant nano-transistorsm
  • Journal : Proc. 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), pp. 205-210, Sapporo, Hokkaido, July 9 – 11, 2008. (invited).
  • No. 179
  • Authors : T. Nishimura, N. Magome, H.-C. Kang, T. Otsuji
  • Title : Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter
  • Journal : Proc. 2008 Asia-Pacific Workshopn on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), pp. 217-220, Sapporo, Hokkaido, July 9-11, 2008.
  • No. 178
  • Authors : H.-C. Kang, T. Nishimura, T. Otsuji, N. Watanabe, T. Asano
  • Title : Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter
  • Journal : Proc. 2008 Asia-Pacific Workshopn on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), pp. 211-215, Sapporo, Hokkaido, July 9-11, 2008.
  • No. 177
  • Authors : T. Nishimura, H. Handa, H. Tsuda, T. Suemitsu, Y.M. Meziani, W. Knap, T. Otsuji, E. Sano, V. Ryzhii, A. Satou, V. Popov, D. Coquillat, and F. Teppe
  • Title : Broadband Terahertz Emission from Dual-Grating Gate HEMT’s -Mechanism and Emission Spectral Profile
  • Journal : Device Research Conference Dig., pp. 263-264, Santa Barbara, CA, June 23-25, 2008.
  • No. 176
  • Authors : 尾辻
  • Title : 2次元プラズモン共鳴型テラヘルツデバイス
  • Journal : 応用物理学会関西支部セミナー「テラヘルツデバイス開発の最前線」, 大阪, June 20, 2008. (invited).
  • No. 175
  • Authors : V. Ryzhii, V. Mitin, M. Ryzhii, N. Ryzbova, and T. Otsuji
  • Title : Device model for graphene nanoribbon phototoransistor
  • Journal : Appl. Phys. Express, Vol. 1, Iss. 6, pp. 063002-1-3, 2008.DOI: 10.1143/APEX.1.063002
  • No. 174
  • Authors : V. Ryzhii, M. Ryzhii, and T. Otsuji
  • Title : Thermionic and tunneling transport mechanisms in graphene field-effect transistors
  • Journal : Physica. Status Solidi (a), Vol. 205, No. 7, pp. 1527-1533, 2008.DOI: 10.1002/pssa.200724035
  • No. 173
  • Authors : Y. M. Meziani, H. Handa, W. Knap, T. Otsuji, E. Sano, V. V. Popov, G. M. Tsymbalov, D. Coquillat, and F. Teppe
  • Title : Room temperature terahertz emission from grating coupled two-dimensional plasmons
  • Journal : Applied Physics Letters, Vol. 92, Iss. 20, pp. 201108-1-3, 2008.DOI: 10.1063/1.2919097
  • No. 172
  • Authors : Taiichi Otsuji, Yahya M. Meziani, Hiroyuki Handa, Wojciech Knap, Vyacheslav V. Popov
  • Title : Room temperature 0.5-to-6.5 THz emission from two-dimensional hot plasmons in doubly interdigitated grating-gate HEMT's
  • Journal : 32nd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) Abstract book, pp. 387-392, Louven, Belgium, May 19-21 2008.
  • No. 171
  • Authors : Y.M. Meziani, H. Handa, W. Knap, T. Otsuji, E. Sano, and V. Popov
  • Title : Room temperature terahertz emission from two-dimensional plasmons in doubly interdigitated grating gatre heterostructure transistors
  • Journal : Conference on Lasers and Elctro-Optics 2008, pp. CTuX2-1-2, San Jose, CA, May 4-9, 2008.
  • No. 170
  • Authors : V. Ryzhii, M. Ryzhii, A. Satou, and T. Otsuji
  • Title : Current-Voltage Characteristics of a Graphene Nanoribbon Field-Effect Transistor
  • Journal : J. Appl. Phys., Vol. 103, pp. 094510-1-8, May. 2008.DOI: 10.1063/1.2917284
  • No. 169
  • Authors : HyunChul Kang, Takuya Nishimura, Taiichi Otsuji
  • Title : Study on integration of a self-complementary broadband spiral antenna onto a plasmon-resonant terahertz emitter
  • Journal : 3rd International Laser, Lightwave and Microwave Conference (ILLMC2008), Paper No. 23-TP3-3, Yokohama, April 23-25, 2008.
  • No. 168
  • Authors : Takuya Nishimura, Nobuhiro Magome, HyunChul Kang, Taiichi Otsuji
  • Title : 2-dimensional plasmon-resonant terahertz emitter employing a novel super-grating dual-gate structure
  • Journal : 3rd International Laser, Lightwave and Microwave Conference (ILLMC2008), Paper No. 23-TP3-2, Yokohama, April 23-25, 2008.
  • No. 167
  • Authors : , 西村, 尾辻
  • Title : プラズモン共鳴テラヘルツエミッタへの自己補対形広帯域スパイラルアンテナ集積化の検討
  • Journal : 2008年春季 第55回応用物理学関係連合講演会予稿集, p. 1157, 船橋, 千葉, March 28, 2008.
  • No. 166
  • Authors : 馬籠, 西村, 尾辻
  • Title : 超周期回折格子ゲートを有する2次元プラズモン共鳴エミッターの検討
  • Journal : 2008年春季 第55回応用物理学関係連合講演会予稿集, p. 1490, 船橋, 千葉, March 28, 2008.
  • No. 165
  • Authors : 津田, 半田, メチアニ, 尾辻
  • Title : 2次元プラズモン共鳴型エミッターからの室温テラヘルツ電磁波放射
  • Journal : 2008年春季 第55回応用物理学関係連合講演会予稿集, p. 1491, 船橋, 千葉, March 28, 2008.
  • No. 164
  • Authors : 尾辻, 末光, 末光, リズィー, 佐野
  • Title : (グラフェンの応用物性)シリコン上のグラフェンによる超高速, 高周波デバイス
  • Journal : 2008年春季 第55回応用物理学関係連合講演会予稿集, p. 57, 船橋, 千葉, March 28, 2008.
  • No. 163
  • Authors : Y.M. Meziani, T. Suemitsu, T. Otsuji, E. Sano
  • Title : Terahertz Emission from Two-dimensional Plasmons in High-electron-mobility Transistors Stimulated by Optical Signals
  • Journal : Progress in Electromagnetics Research Symposium (PIERS), Paper No. 2A4-2, pp., Beijing, China, Mar. 26-30, 2008. (invited).
  • No. 162
  • Authors : 西村, 馬籠, 尾辻
  • Title : プラズモン共鳴型エミッターに及ぼすプラズマ不安定性の影響
  • Journal : 信学総大, C-10-3, ひびきの, 北九州, March 20, 2008.
  • No. 161
  • Authors : 末光
  • Title : トランジスタ高速化のトレンドとテラヘルツへの展望
  • Journal : 信学総大, CT-3-1, ひびきの, 北九州, March 19, 2008.
  • No. 160
  • Authors : 尾辻
  • Title : テラヘルツ波技術の進展と実用化への展望
  • Journal : 電子情報通信学会誌 Vol. 91, No. 2, pp. 150-152, Feb. 2008.
  • No. 159
  • Authors : 尾辻
  • Title : プラズモニックメタマテリアルのテラヘルツデバイス応用
  • Journal : JEITA第6回ナノエレクトロニクス技術分科会, 東京, Jan. 22, 2008.
  • No. 158
  • Authors : 尾辻
  • Title : プラズモン共鳴のテラヘルツ帯デバイス応用
  • Journal : 応用物理学会量子エレクトロニクス研究会, テラヘルツ電磁波技術研究会合同研究会{テラヘルツ分光, イメージングとテラヘルツデバイの物理」講演資料, pp. 28-29, 上智大学セミナーハウス, 軽井沢, 長野, Jan. 12, 2008.
  • No. 157
  • Authors : 尾辻
  • Title : プラズモニックメタマテリアルのテラヘルツデバイス応用
  • Journal : 国際高等研究所主催研究プロジェクト「メタマテリアルの物理と応用」研究会, けいはんなプラザ, 奈良, Jan. 7, 2008.
  • No. 156
  • Authors : V. Ryzhii, A. Satou, T. Otsuji, and M. Shur
  • Title : Plasma mechanisms of resonant terahertz detection in a two-dimensional electron channel with split gates
  • Journal : J. Appl. Phys., Vol. 103, Iss. 1, pp. 014504-1-014504-6, Jan. 2008.DOI: 10.1063/1.2828173
  • No. 155
  • Authors : V. Ryzhii, M. Ryzhii, and T. Otsuji
  • Title : Tunneling current–voltage characteristics of graphene field-effect transistor
  • Journal : Appl. Phys. Express, Vol. 1, Iss. 1, pp. 013001-1-013001-3, Jan. 2008.DOI: 10.1143/APEX.1.013001
  • No. 154
  • Authors : V. Ryzhii, M. Ryzhii, A. Satou, and T. Otsuji
  • Title : Plasma effect and new concept of terahertz devices based on graphene heterostructures
  • Journal : Proc. Advanced Workshop on Forntiers in Electronics, paper No. S1-2, Cozumel, Mexico, Dec. 16, 2007.
  • No. 153
  • Authors : Victor Ryzhii, Akira Satou, Maxim Ryzhii, Fedir Vasko, and Taiichi Otsuji
  • Title : Plasma Waves in Graphene-Based Heterostructures and their Terahertz Device Applications
  • Journal : Proc. International Semiconductor Device Research Symposium, paper No. FA6-02, Maryland, USA, Dec. 14, 2007. (invited).
  • No. 152
  • Title : メタマテリアル-最新技術と応用-, 石原照也監修, シーエムシー出版, 東京, Nov. 2007. [尾辻, プラズモニックメタマテリアルのテラヘルツデバイス応用, pp. 252-261.]
  • No. 151
  • Title : テラヘルツ技術総覧, 廣本宣久(監修), テラヘルツテクノロジーフォーラム(編), NGT, 東京, Nov. 2007. [ 尾辻, 8.1.5. プラズモン共鳴, pp. 497-501, 尾辻, 川西, 9.1.2. テラヘルツサブキャリア, 光通信への応用, pp. 589-594.]
  • No. 150
  • Authors : 半田, 細野, 津田, Y. M. Meziani, 末光, 尾辻
  • Title : HEMT構造2次元プラズモン共鳴型エミッターからのテラヘルツ電磁波放射
  • Journal : 信学技報, Vol. 107, No. 355, ED2007-195, pp. 45-50, Sendai, Japan, Nov. 27, 2007.
  • No. 149
  • Authors : T. Otsuji
  • Title : Plasmonic metamaterials and their applications in novel terahertz devices
  • Journal : 理研シンポジウム, 計測自動制御学会第14 回センシングフォトニクス部会講演会 「第6回ナノフォトニクスシンポジウム ~新奇機能性マテリアルとナノフォトニクス~」, RIKEN, Saitama, Japan, Nov. 22nd, 2007. (invited)
  • No. 148
  • Authors : Y.M. Meziani, M. Hanabe, T. Otsuji, and E. Sano
  • Title : Bolometric detection of terahertz radiation from new grating gates device
  • Journal : Physica Status. Solidi (c), Vol. 5, No. 1, pp. 282-285, Jan. 2008.DOI: 10.1002/pssc.200776536
  • No. 147
  • Authors : T. Otsuji, T. Suemitsu, Y.M. Meziani, E. Sano
  • Title : Terahertz emission from high electron mobility transistors stimulated by photo-induced plasmon instability
  • Journal : Virtual Conf. on Nanoscale Science and Technology (VC-NST) Abstract, p. 3, Fayetteville, AR, Oct. 23, 2007. (invited).
  • No. 146
  • Authors : T. Otsuji, Y.M. Meziani, T. Suemitsu, M. Hanabe, E. Sano
  • Title : Terahertz Emission from 2-dimensional plasmons in HEMT's stimulated by optical signals
  • Journal : Proc. Int. Symp. on Compound Semiconductors (ISCS), TuBIII-6, p. 144, Kyoto, Oct. 15, 2007. (invited).
  • No. 145
  • Authors : V. Ryzhii, M. Ryzhii, and T. Otsuji
  • Title : Population inversion of photoexcited electrons and holes in graphene and its negative terahertz conductivity
  • Journal : Physica Status Solidi (c), Vol. 5, No. 1, pp. 261-264, Jan. 2008.DOI: 10.1002/pssc.200776504
  • No. 144
  • Authors : A. El Fatimy, R. Tauk, S. Boubanga, F. Teppe, N. Dyakonova, W. Knap, J. Lyonnet, Y.M. Meziani, T. Otsuji, M.-A. Poisson, E.. Morvan, S. Bollaert, A. Shchepetov, Y. Ooelens, Ch. Gaquiere, D. Theron, and A. Cappy
  • Title : Plasma oscillations in nanotransistors for room temperature detection and emission of terahertz radiation
  • Journal : Physica Status Solidi (c), Vol. 5, No. 1, pp. 244-248, Jan. 2008.DOI: 10.1002/pssc.200776585
  • No. 143
  • Authors : 尾辻
  • Title : テラヘルツ波領域におけるメタマテリアルの応用
  • Journal : 光学, vol. 36, no. 10, pp. 578-583, Oct. 2007.
  • No. 142
  • Authors : T. Otsuji, Y.M. Meziani, M. Hanabe, T. Nishimura, E. Sano
  • Title : Room temperature terahertz emission from plasmonresonant high-electron mobility transistors stimulated by optical signals
  • Journal : Proc. SPIE, Vol. 6772, 677220M, pp. 1-7, 2, Sept. 11, Boston, 2007. (invited).DOI: 10.1117/12.732832
  • No. 141
  • Authors : Y.M. Meziani, T. Otsuji, and E. Sano
  • Title : Emission of terahertz radiation from an interdigitated grating gates HEMT
  • Journal : Dig. IRMMW/THz 2007, TueP5-28, p. 466, Cardiff, UK, 2007.
  • No. 140
  • Authors : A.Satou, V.Ryzhii, T.Otsuji, and M.S.Shur
  • Title : Resonant terahertz detection antenna utilizing plasma oscillations in lateral Schottky diode
  • Journal : Int. J. High Speed Electron. Sys., vol. 17, No. 3, pp.539-546, Sept. 2007.DOI: 10.1142/S0129156407004722
  • No. 139
  • Authors : E.. Sano, and T. Otsuji
  • Title : HEMT-based nanometer devices toward terahertz era
  • Journal : Int. J. High Spped Electron. Sys., vol. 17, no. 3, pp. 509-520, Sept. 2007.DOI:
  • No. 138
  • Authors : V.Ryzhii, I.Khmyrova, M.Ryzhii, A.Satou, T.Otsuji, V.Mitin, and M.S.Shur
  • Title : Plasma waves in two-dimensional electron systems and their applications
  • Journal : Int. J. High Speed Electron. Sys., vol. 17, No. 3, pp.521-538, Sept. 2007.DOI: 10.1142/S0129156407004710
  • No. 137
  • Authors : T. Nishimura, d T. Otsuji
  • Title : Terahertz polarization controller based on electronic dispersion control of 2D plasmons
  • Journal : International Journal of High Speed Electronics and Systems, Vol. 13, No. 3, pp. 547-555, Sept. 2007.DOI: 10.1142/S0129156407004734
  • No. 136
  • Authors : T. Nishimura, K. Horiike, and T. Otsuji
  • Title : A novel intensity modulator for terahertz electromagnetic waves utilizing plasmon resonance in grating-gate HEMT's
  • Journal : 7th Topical Workshop on Heterostructure Microelectronics (TWHM) Abstracts, pp. 67-68, Chiba, Japan, Aug. 21-24, 2007.
  • No. 135
  • Authors : H. H, da, Y.M. Meziani, M. Hanabe, T. Otsuji, and E. Sano
  • Title : Generation of terahertz radiation from a dual grating gates HEMT
  • Journal : 7th Topical Workshop on Heterostructure Microelectronics (TWHM) Abstracts, pp. 63-64, Chiba, Japan, Aug. 21-24, 2007.
  • No. 134
  • Authors : T. Otsuji, Y.M. Meziani, M. Hanabe, T. Nishimura, and E. Sano
  • Title : Emission of terahertz radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant emitter
  • Journal : Solid-State Electronics, Vol. 51, Iss. 10, pp. 1319-1327, Oct. 2007.DOI: 10.1016/j.sse.2007.07.017
  • No. 133
  • Authors : A.El Fatimy, R. Tauk, S. Boubanga, F. Teppe, N. Dyakonova, W. Knap, Y.M. Meziani, T. Otsuji, M.-A. Poisson, and E. Morvan
  • Title : Plasma oscillation in nanotransistors fro room temperature detection and emission of terahertz radiation
  • Journal : The 15th Int. Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIC-15) Abstracts, p. 157, Tokyo, Japan, July 23-27, 2007.
  • No. 132
  • Authors : Y.M. Meziani, M. Hanabe, T. Otsuji, and E. Sano
  • Title : Bolometer detection of terahertz radiation from new grating gate device
  • Journal : The 15th Int. Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIC-15) Abstracts, p. 113, Tokyo, Japan, July 23-27, 2007.
  • No. 131
  • Authors : V. Ryzhii, M. Ryzhii, and T. Otsuji
  • Title : Population inversion of photoexcited electrons and holes in graphene and its negative terahertz conductivity
  • Journal : The 15th Int. Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIC-15) Abstracts, p. 46, Tokyo, Japan, July 23-27, 2007.
  • No. 130
  • Authors : K. Narahara, T. Nakamichi, T. Suemitsu, T. Otsuji, and E. Sano
  • Title : Development of solitons in composite right- and left-handed transmission lines periodically loaded with Schottky varactors
  • Journal : Journal of Applied Physics, vol. 102, iss. 2, pp. 024501-1-024501-4, 2007.DOI: 10.1063/1.2753568
  • No. 129
  • Authors : Y.M. Meziani, T. Suemitsu, Y. Hosono, M. Hanabe, T. Otsuji, and E. Sano
  • Title : Novel plasmon-resonant terahertz-wave emitter using double-decked HEMT structure
  • Journal : 第1回JSAPーTHz研, IEICE-THz研合同研究会予稿集, p. 18, 沖縄, July 5-7, 2007.
  • No. 128
  • Authors : Yohei Hosono, Yahya M. Meziani, Mitsuhiro Hanabe, Tetsuya Suemitsu, Taiichi Otsuji, Eiichi S
  • Title : Terahertz-wave emission stimulated by photo-induced plasmon insta­bility in double-decked InGaP/InGaAs/GaAs HEMT structur
  • Journal : 26th Electronic Materials Symposium, Paper No. M7, Siga, Japan, Jul. 4-6, 2007.
  • No. 127
  • Authors : Tetsuya Suemitsu, Yahya M. Meziani, Yohei Hosono, Mitsuhiro Hanabe, Taiichi Otsuji, Eiichi S
  • Title : Novel plasmon-resonant terahertz-wave emitter using a double-decked HEMT structu
  • Journal : 65th Device Research Conference (DRC) Dig., pp. 157-158, Notre Dame, IN, USA, Jun. 18-20, 2007.
  • No. 126
  • Authors : T. Otsuji
  • Title : Stimulated emission of terahertz radiation from a plasmon-resonant photomixer fabricated with GaAs-based heterostructure material systems
  • Journal : 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) Abstract book, pp. 387-392, Venice, Italy, May 23rd, 2007. (invited)
  • No. 125
  • Authors : Y. M. Meziani, M. Hanabe, A. Koizumi, T. Otsuji and E. Sano
  • Title : Self oscillation of the plasma waves in a dual grating gates HEMT device
  • Journal : the 19th International Conference on Indium Phosphide and Related Materials, Matsue, Japan, May 2007.
  • No. 124
  • Authors : K. Narahara, T. Nakamichi, T. Otsuji, and E. Sano
  • Title : Development of solitons in composite right- and left-handed transmission lines periodically loaded with varactors with symmetrical capacitance-voltage characteristics
  • Journal : Japanese Journal of Applied Physics, vol. 46, no. 5A, pp. 3123-3125, May 2007.DOI:10.1143/JJAP.46.3123
  • No. 123
  • Authors : Y. M. Meziani, M. Hanabe, A. Koizumi, T. Ishibashi, T. Uno, T. Otsuji and E. Sano
  • Title : Generation of terahertz radiation from a new InGaP/InGaAs/GaAs double grating gate HEMT device
  • Journal : Conference on Lasers and Elctro-Optics 2007, Baltimore MD, May 2007.
  • No. 122
  • Authors : M. Hanabe, Y. M. Meziani, T. Otsuji, E. Sano and T. Asano
  • Title : Possibility of Terahertz injection-locked oscillation in an InGaP/InGaAs/GaAs two-dimensional plasmon-resonant photomixer
  • Journal : IEICE Transactions on Electronics, vol. E90-C, No.5, pp. 949-954, May 2007.DOI: 10.1093/ietele/e90-c.5.949
  • No. 121
  • Authors : T. Suemitsu, d M. Tokumi
  • Title : InP HEMT technology for high-speed logic and communications
  • Journal : IEICE Trans. Electron., vol. E90-C, no. 5, pp. 917-922, 2007.
  • No. 120
  • Authors : Y. M. Meziani, M. Hanabe T. Otsuji, and E. Sano
  • Title : Threshold behavior of photoinduced plasmon-resonant self-oscillation in a new interdigitated grating gates device
  • Journal : Japanese Journal of Applied Physics, Vol. 46, No. 4B, pp. 2409-2412, Apr 2007.DOI: 10.1143/JJAP.46.2409
  • No. 119
  • Authors : 末光哲也
  • Title : 高電子移動度トランジスタの高速性能極限の追求
  • Journal : 電子情報通信学会論文誌 vol. J90-C, no. 4 (2007) pp. 312-318.
  • No. 118
  • Authors : V. Ryzhii, M. Ryzhii, and T. Otsuji
  • Title : Negative dynamic conductivity of graphene with optical pumping
  • Journal : J. Appl. Phys., Vol. 101, No. 7, pp. 083114-1 - 083114-4, Apr 2007. http://dx.doi.org/10.1063/1.2717566
  • No. 117
  • Authors : 半田, 金子, 花辺, メチアニ, 尾辻, 佐
  • Title : 2次元プラズモン共鳴型エミッターからのインパルス光励起による室温テラヘルツ電磁波放射
  • Journal : 2007年春季 第54回応用物理学会関係連合講演会 講演予稿集, No. 3-28p-J-6, pp. 1173-1173. Kanagawa, Japan, March 2007.
  • No. 116
  • Authors : 細野, 小泉, メチアニ, 花辺, 尾辻, 佐
  • Title : 2次元プラズモン共鳴型エミッターからのCW光励起による室温テラヘルツ電磁波放射
  • Journal : 2007年春季 第54回応用物理学会関係連合講演会 講演予稿集, No. 3-28p-J-5, pp. 1173-1173. Kanagawa, Japan, March 2007.
  • No. 115
  • Authors : 尾辻, メチアニ, 花辺, 西村, 佐野
  • Title : 2次元プラズモン共鳴効果によるテラヘルツ波発生
  • Journal : 電子情報通信学会総合大会, CS-11-7, pp. s88-s89, Nagoya, Japan, March 23th, 2007.
  • No. 114
  • Authors : 小泉, 花辺, 細野, メチアニ, 尾辻, 佐
  • Title : プラズモン共鳴型エミッタにおける光励起テラヘルツ波放射
  • Journal : 電子情報通信学会総合大会, C-10-5, pp. 68-68, Nagoya, Japan, March 22th, 2007.
  • No. 113
  • Authors : Y.M. Meziani, M. Hanabe, A. Koizumi, T. Otsuji, and E. Sano
  • Title : Terahertz Emission from InGaP/InGaAs/GaAs Double Grating Gate HEMT Device
  • Journal : in Optical Terahertz Science and Technology 2007 Technical Digest (The Optical Society of America, Washington, DC), pp. MD12-1-3, Orlando FL, March 18-21, 2007.
  • No. 112
  • Authors : T. Otsuji
  • Title : Terahertz Emission from High-Electron Mobility Transistors Stimulated by Optical Signals
  • Journal : Nano and Giga Challenges in Electronics and Photonics, p. 162, Phoenix, Arizona, March 12-16, 2007. (invited)
  • No. 111
  • Authors : Y. M. Meziani, T. Otsuji, M. Hanabe, T. Ishibashi, T. Uno and E. Sano
  • Title : Room temperature generation of terahertz radiation from a grating-bicoupled plasmon-resonant emiter: size effect
  • Journal : Applied Physics Letters, vol.90, pp.061105-1-061105-3, Feb 2007.DOI: 10.1063/1.2459879
  • No. 110
  • Authors : 尾辻泰一
  • Title : プラズモン共鳴を利用した新原理半導体デバイスの室温テラヘルツ電磁波放射
  • Journal : 機能材料, 2007年3月号, Vol.27, No.3, pp41-47, シーエムシー出版, Feb, 2007,
  • No. 109
  • Authors : Tetsuya Suemitsu
  • Title : Recent achievements in the reliability of InP-based HEMTs
  • Journal : Thin Solid Films, vol. 515, no. 10, pp. 4378-4383, 2007.
  • No. 108
  • Authors : 西村, 尾辻
  • Title : 二次元プラズモンの電気的分散制御によるテラヘルツ偏光版の可能性
  • Journal : 第三回MWP, THz合同研究会, pp. 39-42, Hiroshima, Japan, Jan. 2007
  • No. 107
  • Authors : M. Hanabe, Y. M. Meziani, T. Otsuji and E. Sano
  • Title : Room-temperature emission of terahertz radiation from InGaP/InGaAs/GaAs grating-bicoupled two-dimensional plasmon-resonant photomixers
  • Journal : in Proc. of the Joint International Conference of the 4th IGNOIE-COE06 & SOIM-COE06, pp.348-349, Sendai, Japan, Jan, 2007.
  • No. 106
  • Authors : V. Ryzhii, A. Satou and T. Otsuji
  • Title : Plasma waves in two-dimensional electron-hole system in gated graphene heterostructures
  • Journal : Journal of Applied Physics, vol.101, 024509-1-024509-5, Jan. 2007.DOI: 10.1063/1.2426904
  • No. 105
  • Authors : Y. M. Meziani, M. Hanabe, A. Koizumi, T. Otsuji and E. Sano
  • Title : Room temperature emission of terahertz radiation from a new plasmon resonant emitter
  • Journal : in the Technical Digest of the 10th International Symposium on Contemporary Photonics Technology, pp. 147-148, Tokyo, Japan, Jan. 2007.
  • No. 104
  • Title : N. Dagli ed., High-Speed Photonic Devices, Taylor & Francis, New York, 2007. (T. Otsuji, Chapt. 7, "IC Technologies for Future Lightwave Communication Systems, " pp. 185-215.)
  • No. 103
  • Authors : T. Otsuji, Y. M. Meziani, M. Hanabe, T. Ishibashi, T. Uno and E. Sano
  • Title : Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems
  • Journal : Applied Physics Letters, vol.89, pp.263502-1-263502-3, Dec 2006.DOI: 10.1063/1.2410228
  • No. 102
  • Authors : 花辺, 金子, MEZIANI, 尾辻, 佐野
  • Title : 縦型共振器構造を有するInGaP/InGaAs/GaAsプラズモン共鳴フォトミキサーにおける室温テラヘルツ帯電磁波放射
  • Journal : 電子情報通信学会技術研究報告, pp. 83-88, Tokyo, Japan, Dec. 2006.
  • No. 101
  • Authors : 尾辻
  • Title : プラズモン共鳴テラヘルツ光源デバイス=半導体へテロ接合構造による新原理フォトミキサーデバイスの実
  • Journal : 光アライアンス 12月号, Vol.17, No.12, pp19-23, OA0609-05, 日本工業出版, Dec 2006
  • No. 100
  • Authors : E. Sano, d T. Otsuji
  • Title : HEMT-based nanometer devices toward tera-hertz era
  • Journal : in the Workbook of the International Topical Workshop "Tera- and Nano-Devices: Physics and Modeling, " pp. 48-49, Aizu-Wakamatsu, Japan, Oct. 2006. (invited).
  • No. 99
  • Authors : T. Nishimura, d T. Otsuji
  • Title : Terahertz polarization controller based on electronic dispersion control of 2D plasmons
  • Journal : in the Workbook of the International Topical Workshop "Tera- and Nano-Devices: Physics and Modeling, " pp. 62-63, Aizu-Wakamatsu, Japan, Oct. 2006.
  • No. 98
  • Authors : A. Satou, V. Ryzhii, T. Otsuji and M. S. Shur
  • Title : Resonant terahertz detection antenna utilizing plasma oscillations in lateral Schottky diode
  • Journal : in the Workbook of the International Topical Workshop "Tera- and Nano-Devices: Physics and Modeling, " pp. 58-59, Aizu-Wakamatsu, Japan, Oct. 2006.
  • No. 97
  • Authors : V. Ryzhii, I. Kymyrova, M. Ryzhii, A. Satou, T. Otsuji, V. Mitin and M. S. Shur
  • Title : Terahertz plasma waves in two-dimensional electron systems and their applications
  • Journal : in the Workbook of the International Topical Workshop "Tera- and Nano-Devices: Physics and Modeling, " pp. 50-51, Aizu-Wakamatsu, Japan, Oct. 2006.
  • No. 96
  • Authors : 尾辻
  • Title : メタマテリアルの応用研究 -光源及び信号処理への応用
  • Journal : 理研シンポジウム-電磁メタマテリアル, Saitama, Japan, Sept, 2006. (invited).
  • No. 95
  • Authors : 尾辻, 花辺, MEZIANI, 金子, 佐野
  • Title : 新構造InGaP/InGaAs/GaAs プラズモン共鳴型フォトミキサーによる室温テラヘルツ電磁波放射
  • Journal : 2006年電子情報通信学会ソサエティ大会講演論文集, No. C-10-7, pp. 48-48. Ishikawa, Japan, Sept. 2006.
  • No. 94
  • Authors : M. Hanabe, T. Otsuji, Y. M. Meziani and E. Sano
  • Title : Possibility of injection-locked emission of terahertz radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant photomixer
  • Journal : in Conf. Dig. of the Joint 31th International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, No. MonP-58, pp. 114-114, Shanghai, China, Sept. 2006.
  • No. 93
  • Authors : Y. M. Meziani, M. Hanabe, T. Otsuji and E. Sano
  • Title : Threshold behavior of photoresponse of plasma waves by new phomixer devices
  • Journal : in Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, No. B-9-5, pp. 894-895, Yokohama, Japan, Sept. 2006.
  • No. 92
  • Authors : 半田, 四方, 名和原, 伊藤
  • Title : THz波パラメトリック光源を用いた液体試料のTHz帯複素屈折率測定
  • Journal : 平成18年度電気関係学会東北支部連合大会講演論文集, No. 1C-18, pp. 92-92, Akita, Japan, Aug. 2006.
  • No. 91
  • Authors : 金子, 花辺, MEZIANI, 尾辻, 佐野
  • Title : 二重回折格子ゲートを有するヘテロ構造トランジスタの光電子励起テラヘルツ帯プラズモン共鳴
  • Journal : 2006年秋季第66回応用物理学会学術講演会講演予稿集, pp. 1262-1262, Shiga, Japan, Aug. 2006.
  • No. 90
  • Authors : K. Narahara, T. Otsuji and E. Sano
  • Title : Generation of electrical-short-pulse using Schottky line periodically loaded with electronic switches
  • Journal : Journal of Applied Physics, Vol. 100, Iss. 2, pp. 0204511-1-0204511-5, July 15th 2006.DOI: 10.1063/1.2210269
  • No. 89
  • Authors : MEZIANI, 尾辻, 花辺
  • Title : Enhancement of plasma wave instabilities in a grating-bicoupled HEMT structure
  • Journal : 第6回テラヘルツ応用システム研究会講演予稿集, pp. 17-20, Sendai, Japan, July 2006.
  • No. 88
  • Authors : K. Narahara, T. Otsuji and E. Sano
  • Title : Pulse Compression by Quasi-Steady Propagation along Switch Lines
  • Journal : Japanese Journal of Applied Physics, Vol. 45, No. 7, pp. 5692-5695, July 7th 2006.DOI: 10.1143/JJAP.45.5692
  • No. 87
  • Authors : M. Hanabe, T. Otsuji, Y. M. Meziani, E. Sano and T. Asano
  • Title : Terahertz emission of radiation produced by photoexcited instability of two-dimensional plasmons in an InGaP/InGaAs/GaAs heterostructure transistor
  • Journal : in Dig. the 2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, pp. 291-295, Sendai, Japan, July 2006.
  • No. 86
  • Authors : A. Satou, V. Ryzhii, T. Otsuji and M. S. Shur
  • Title : Resonant terahertz detectors with lateral schottky junctions,
  • Journal : in Dig. the 2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, pp. 285-290, Sendai, Japan, July 2006.
  • No. 85
  • Authors : V. Tamosiunas, D. Seliuta, A. Juozapavicius, E. Sirmulis, G. Valusis, A. El Fatimy, Y. Meziani, N. Dyakonova, J. Lusakowski, W. Knap, A. Lisauskas, H. G. Roskos and K. Kohler
  • Title : Review: New trends in terahertz electronics
  • Journal : Lithuanian Journal of Physics, Vol. 46, No. 2, pp. 131-145, July 2006.
  • No. 84
  • Authors : T. Nishimura, M. Hanabe, M. Miyamoto, T. Otsuji and E. Sano
  • Title : Terahertz frequency multiplier operation of 2-D plasmon-resonant photomixer
  • Journal : IEICE Transactions on Electronics, Vol. E89-C, No. 7, pp.1005-1011, July 2006.DOI: 10.1093/ietele/e89-c.7.1005
  • No. 83
  • Authors : Y. M. Meziani, J. Lusakowski, N. Dyakonova, W. Knap, D. Seliuta, E. Sirmulis, J. Devenson, G. Valusis, F. Boeuf and T. Skotnicki
  • Title : Non resonant response of terahertz radiation by submicron CMOS transistors
  • Journal : IEICE Transactions on Electronics, Vol. E89-C, No. 7, pp. 993-998, July 2006.
  • No. 82
  • Authors : M. Hanabe, T. Nishimura, M. Miyamoto, T. Otsuji and E. Sano
  • Title : Structure-sensitive design for wider tunable operation of terahertz plasmon-resonant photomixer
  • Journal : IEICE Transactions on Electronics, Vol. E89-C, No. 7, pp. 985-992, July 2006.DOI: 10.1093/ietele/e89-c.7.985
  • No. 81
  • Authors : Y. M. Meziani, T. Otsuji, M. Hanabe, T. Ishibashi, T. Uno and E. Sano
  • Title : Emission of terahertz radiation from new grating-bicoupled HEMT device
  • Journal : in Dig. the 14th International Symposium on Nanostructures, No. IRMW.03o, pp. 336-337, St. Petersburg, Russia, June 2006.
  • No. 80
  • Authors : T. Otsuji, M. Hanabe, Y. M. Meziani and E. Sano
  • Title : Terahertz emission of radiation from InGaP/InGaAs/GaAs grating bi-coupled plasmon-resonant photomixer
  • Journal : in Conf. Dig. the 64th Device Research Conference, No. VA-2, pp. 193-194, Pennsylvania PA, June 2006.
  • No. 79
  • Authors : T. Inushima, N. Kato, D. K. Maude, H. Lu, W. J. Schaff, R. Tauk, Y. Meziani, S. Ruffenack, O. Briot, W. Knap, B. Gil, H. Miwa, A. Yamamoto, D. Muto, Y. Nanishi, M. Higashiwaki and T. Mats
  • Title : Superconductivity of InN with a well defined Fermi surface
  • Journal : Physica Status Solidi (b) -Basic Solid State Physics, Vol. 243, No. 7, pp. 1679-1686, June 2006.
  • No. 78
  • Authors : T. Otsuji, Y. M. Meziani, M. Hanabe, T. Ishibashi, T. Uno and E. Sano
  • Title : A grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure metamaterial systems
  • Journal : in Tech. Dig. OSA International Topical Meeting on Photonic Metamaterials, No. WD-29, Grand Bahama Islands, The Bahamas, June 2006.DOI: 10.1364/META.2006.WD29
  • No. 77
  • Authors : T. Otsuji, M. Hanabe, T. Nishimura and E. Sano
  • Title : A grating-bicoupled plasma-wave photomixer with resonant-cavity enhanced structure
  • Journal : Optics Express, Vol. 14, No. 11, pp. 4815-4825, May 2006. http://dx.doi.org/10.1364/OE.14.004815
  • No. 76
  • Authors : V. Ryzhii, M. Ryzhii, I. Khmyrova, T. Otsuji and M. Shur
  • Title : Resonant terahertz photomixing in integrated high-electron-mobility transistor and quantum-well infrared photodetector devi
  • Journal : , Japanese Journal of Applied Physics, Vol. 45, No. 4B, pp. 3648–3651, April 2006.DOI: 10.1143/JJAP.45.3648
  • No. 75
  • Authors : Y. M. Meziani, M. Hanabe and T. Otsuji
  • Title : Total emission of terahertz radiations by plasma-resonant photomixer
  • Journal : in Proc. of SPIE Conference on Microwave and Terahertz Photonics, Strasbourg, France, Vol. 6194, No. 61940E, April 2006.DOI: 10.1117/12.662179
  • No. 74
  • Authors : J. Lusakowski, W. Knap, Y. Meziani, J.-P. Cessoa, A. El Fatimya, R. Tauka, N. Dyakonova, G. Ghibaudo, F. Boeuf and T. Skotnicki
  • Title : Electron mobility in quasi-ballistic Si MOSFETs
  • Journal : Solid-State Electronics, Vol. 50, Iss. 4, pp. 632-636, April 2006.
  • No. 73
  • Authors : 西村, 花辺, 尾辻, 佐野
  • Title : プラズモン共鳴フォトミキサーのテラヘルツ帯周波数逓倍器としての可能性
  • Journal : 電子情報通信学会2006年総合大会講演論文集, No. C-10-7, Tokyo, Japan, March 2006.
  • No. 72
  • Authors : 西村, 花辺, MEZIANI, 尾辻
  • Title : 2次元プラズモン共鳴型フォトミキサーのテラヘルツ帯信号増幅利得に関する解析的検討
  • Journal : 電子情報通信学会技術研究報告(信学技報), Vol. 105, No. 629, ED2005-244, pp. 39-42, Sendai, Japan, March 2006.
  • No. 71
  • Authors : 花辺, 石橋, 宇野, 今村, 尾辻
  • Title : GaAs MESFET における寄生容量成分がテラヘルツ帯プラズマ共鳴効果に及ぼす影響
  • Journal : 電子情報通信学会第2回MWP, THz合同研究会資料, MWP05-15, THz05-31, pp. 23-26, Kagoshima, Japan, Jan. 2006.
  • No. 70
  • Authors : M. Ryzhii, I. Khmyrova, V. Ryzhii, T. Otsuji, and M. Shur
  • Title : Modeling of plasma oscillations and terahertz photomixing in HEMT-like heterostructure with lateral Schottky junction
  • Journal : Proc. SPIE, Vol. 6039, 60390K, pp. 1-8, Jan. 2005.DOI: 10.1117/12.638239
  • No. 69
  • Authors : V. Ryzhii, A. Satou, I. Khmyrova, M. Ryzhii and T. Otsuji
  • Title : Photomixing in UTC-photodiode with electron resonant cavity
  • Journal : in Tech. Dig. of the 9th International Symposium on Contemporary Photonics Technology, pp. P11-1-P11-2, Tokyo, Japan, Jan. 2006.
  • No. 68
  • Authors : V. Ryzhii, A. Satou, I. Khmyrova, M. Ryzhii, T. Otsuji, V. Mitin and M. S. Shur
  • Title : Terahertz plasma instability in tunneling injection transit-time lateral Schottky diode
  • Journal : in Proc. of the Joint International Conference on the 7th of New Phenomena in Mesoscopic Structures and the 5th of Surfaces and Interfaces of Mesoscopic Devices, pp. P31-1-P31-2, Maui, HI, Dec. 2005.
  • No. 67
  • Authors : Y. M. Meziani, M. Hanabe, T. Nishimura, T. Otsuji and V. Ryzhii
  • Title : Numerical study on the radiation properties of plasmon-resonant photomixers
  • Journal : in Extended Abstracts of the International Workshop on Terahertz Technology 2005, pp. 227-228, Osaka, Japan, Nov. 2005.
  • No. 66
  • Authors : M. Hanabe, N. Imamura, T. Uno, T. Ishibashi, Y. M. Meziani and T. Otsuji
  • Title : Effects of parasitic capacitance on the terahertz plasmon resonance in GaAs MESFET's
  • Journal : in Entended Abstracts of the International Workshop on Terahertz Technology 2005, pp. 181-182, Osaka, Japan, Nov. 2005.
  • No. 65
  • Authors : 尾辻, 花辺, 西村, RYZHII, 佐野
  • Title : プラズモン共鳴型テラヘルツ帯フォトミキサー -基本特性とその逓倍動作の可能性
  • Journal : 電気学会合同調査専門委員会, Tokyo, Japan, Nov. 2005.
  • No. 64
  • Authors : V. Ryzhii, M. Ryzhii, I. Khmyrova, T. Otsuji and M. Shur
  • Title : Terahertz photomixing in heterostructure device based on integration of high-electron mobility transistor and quantum-well infrared photodetector
  • Journal : in Proc. of the 2005 International Topical Meeting on Microwave Photonics, pp. F3-3-1-F3-3-4, Seoul, Korea, Oct. 2005.
  • No. 63
  • Authors : M. Hanabe, T. Nishimura, T. Otsuji and E. Sano
  • Title : Highly frequency-tunable terahertz plasmon-resonant photomixer with super-grating gate structure
  • Journal : in Conf. Dig. the Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, pp. 638-639, Williamsburg, VA, Sept. 2005.
  • No. 62
  • Authors : 山本, 浜砂, 渡辺, 尾辻, 浅野, 松岡
  • Title : SiPの実装条件が高速インターフェイサの伝送特性に及ぼす影響
  • Journal : 2005年電子情報通信学会ソサエティ大会講演論文集, No. C-12-5, Sapporo, Japan, Sept. 2005.
  • No. 61
  • Authors : 加藤, 佐藤, 岡田, 尾辻, 有馬, 浅野
  • Title : VS-MOSによる自律適応的電力, 速度制御型論理システム
  • Journal : 2005年電子情報通信学会ソサエティ大会講演論文集, No. C-12-1, Sapporo, Japan, Sept. 2005.
  • No. 60
  • Authors : Y. M. Meziani, J. Lusakowski, N. Dyakonova, W. Knap, D. Seliuta, E. Sirmulis, J. Devenson, G. Valusis, F. Boeuf and T. Skotnicki
  • Title : Non resonant detection of terahertz radiation by nanometer field effect transistors
  • Journal : in Conf. Dig. the Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, pp. 269-270, Williamsburg, VA, Sept. 2005.
  • No. 59
  • Authors : J. Lusakowski, W. Knap, Y. Meziani, J. -P. Cesso, A. El Fatimy, R. Tauk, N. Dyakonova, G. Ghibaudo, F. Boeuf and T. Skotnicki
  • Title : Influence of ballistic and pocket effects on electron mobility in Si MOSFETs
  • Journal : Proc. the 35th European Solid State Device Research Conference 2005, pp. 561-564, Grenoble, France, Sept. 2005.
  • No. 58
  • Authors : V. Ryzhii, M. Ryzhii, I. Khmyrova, T. Otsuji and M. S. Shur
  • Title : Resonant terahertz photomixing in integrated HEMT-QWIP device
  • Journal : in Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials, pp. G-4-5-1-G4-5-2, Kobe, Japan, Sept. 2005.
  • No. 57
  • Authors : 花辺, 西村, 宮本, 尾辻, 佐野
  • Title : 広帯域テラヘルツ帯プラズモン共鳴フォトミキサーの設計
  • Journal : 2005年秋季第66回応用物理学会学術講演会講演予稿集, pp. 1234-1234, Tokushima, Japan, Sept. 2005.
  • No. 56
  • Authors : 今村, 宇野, 石橋, 花辺, 尾辻
  • Title : GaAs MESFETの寄生容量成分がテラヘルツ帯プラズモン共鳴効果に及ぼす影響
  • Journal : 2005年秋季第66回応用物理学会学術講演会講演予稿集, pp. 1243-1243, Tokushima, Japan, Sept. 2005.
  • No. 55
  • Authors : T. Nishimura, M. Hanabe, M. Miyamoto, T. Otsuji and E. Sano
  • Title : Terahertz frequency multiplier operation of 2-D plasmon-resonant photomixer
  • Journal : in Abstracts of the 6th Topical Workshop on Heterostructure Microelectronics, pp. 58-59, Awaji, Japan, Aug. 2005.
  • No. 54
  • Authors : Y. M. Meziani, J. Lusakowski, N. Dyakonova, W. Knap, D. Seliuta, E. Sirmulis, J. Devenson, G. Valusis, F. Boeuf and T. Skotnicki
  • Title : Non resonant response of terahertz radiation by submicron CMOS transistors
  • Journal : in Abstracts of the 6th Topical Workshop on Heterostructure Microelectronics, pp. 54-55, Awaji, Japan, Aug. 2005.
  • No. 53
  • Authors : M. Hanabe, T. Nishimura, M. Miyamoto, T. Otsuji and E. Sano
  • Title : Structure-sensitive design for wider tunable operation of terahertz plasmon-resonant photomixer
  • Journal : in Abstracts of the 6th Topical Workshop on Heterostructure Microelectronics, pp. 52-53, Awaji, Japan, Aug. 2005.
  • No. 52
  • Authors : J. Lusakowski, W. Knap, Y. Meziani, J. -P. Cesso, A. El Fatimy, R. Tauk, N. Dyakonova, G. Ghibaudo, F. Boeuf and T. Skotnicki
  • Title : Ballistic and pocket limitations of mobility in nanometer Si metal-oxide semiconductor field-effect transistors
  • Journal : Applied Physics Letters, Vol. 87, No. 5, pp. 053507-1-053507-3, July 2005.
  • No. 51
  • Authors : T. Otsuji, M. Hanabe, T. Nishimura, N. Imamura, E. Sano and V. Ryzhii
  • Title : Widely-tunable terahertz plasmon-resonant photomixer based on heterostructure integrated microelectronics
  • Journal : in Abstracts of the 35th Workshop on Physics and Technology of Terahertz Photonics, p. 21-5, Elice, Italy, July 2005.
  • No. 50
  • Title : 尾辻, テラヘルツデバイスの高度情報信号処理技術への応用(Ⅲ章第4節), テラヘルツテクノロジー~発生, 計測, 応用技術, 展望~, 大森豊明 監修, エヌ, ティー, エス, Tokyo, Japan, July 2005. (pp. 244-258)
  • No. 49
  • Authors : F. Teppe, J. Lusakowski, N. Dyakonov, Y. M. Meziani, W. Knap, T. Parentry, S. Bollaert, A. Cappy, V. Popov, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev and M. S. Shur
  • Title : Terahertz emission and detection by plasma waves in nanoscale transistors
  • Journal : in Conf. Proc. the 27th International Conference on the Physics of Semiconductors, Vol. 772, Iss. 1, pp. 1523-1524, June 2005.
  • No. 48
  • Authors : M. Hanabe, T. Otsuji, T. Ishibashi, T. Uno and V. Ryzhii
  • Title : Modulation effects of photocarriers on the terahertz plasma-wave resonance in high-electron-mobility transistors under interband photoexcitation
  • Journal : Japanese Journal of Applied Physics, Vol. 44, No. 6A, pp. 3842-3847, June 2005.DOI: 10.1143/JJAP.44.3842
  • No. 47
  • Authors : Y. M. Meziani, J. Lusakowski, N. Dyakonova, W. Knap, D. Seliuta, E. Sirmulis, J. Devenson, G. Valusis, F. Boeuf and T. Skotnicki
  • Title : Silicon field-effect transistors as a detector of terahertz radiations
  • Journal : 電子情報通信学会第3回テラヘルツ応用システム研究会資料, THz05-2, pp. 5-8, Tokyo, Japan, May 2005.
  • No. 46
  • Authors : 西村, 花辺, 尾辻, 佐野
  • Title : プラズモン共鳴フォトミキサーのテラヘルツ周波数逓倍器としての可能性
  • Journal : 電子情報通信学会第3回テラヘルツ応用システム研究会資料, THz05-1, pp. 1-4, Tokyo, Japan, May 2005.
  • No. 45
  • Authors : 花辺, 重信, 高橋, 尾辻, 佐野
  • Title : 2重回折格子, 縦型共振器構造を有する2次元プラズモン共鳴型テラヘルツ帯フォトミキサー
  • Journal : 2005年春季第52回応用物理学関係連合講演会講予稿集, pp. 1554-1554, Saitama, Japan, March 2005.
  • No. 44
  • Authors : 花辺, 重信, 尾辻, 佐野
  • Title : 2次元プラズモン共鳴型フォトミキサーのテラヘルツ帯電界放射特性の解析
  • Journal : 電子情報通信学会技術研究報告(信学技報), Vol. 104, No. 694, ED2004-251, pp. 11-15, Sendai, Japan, March 2005.
  • No. 43
  • Authors : 加藤, 山本, 高橋, 浜砂, 尾辻
  • Title : GaAs HBTによるSiP用高速ユニバーサル論理レベルインターフェイサ
  • Journal : 第8回システムLSIワークショップポスター資料集, No. 32, pp. 327-330, Kitakyushu, Japan, Nov. 2004.
  • No. 42
  • Authors : 尾辻, 花辺, 重信, 高橋, 佐野
  • Title : 縦型共振器構造を有する2次元プラズモン共鳴型テラヘルツ帯フォトミキサー
  • Journal : 2004年テラヘルツテクノロジーフォーラム第3回研究会ポスター講演, Vol. 15, Tsukuba, Japan, Nov. 2004.
  • No. 41
  • Authors : T. Otsuji, S. Takahashi, N. Hamasuna, T. Takada and Y. Matsuoka
  • Title : A 40-Gbit/s-class universal logic interfacer IP using GaAs HBT’s for heterogeneous logic/device systems in package
  • Journal : in Tech. Dig. The 2004 IEEE Compound Semiconductor IC Symposium, pp. 251-254, Monterey, CA, Oct. 2004.DOI: 10.1109/CSICS.2004.1392553
  • No. 40
  • Authors : 尾辻, 花辺, 重信, 高橋, 佐野
  • Title : 縦型共振器構造を有する2次元プラズモン共鳴型テラヘルツ帯フォトミキサー
  • Journal : 電子情報通信学会第1回MWP, THz応用システム共催研究会資料, MWP04-19, THz04-25, pp. 85-88, Fukuoka, Japan, Oct. 2004.
  • No. 39
  • Authors : 花辺, 石橋, 宇野, 尾辻, RYZHII
  • Title : バンド間光学励起条件下におけるHEMT素子のテラヘルツ帯プラズマ共鳴特性
  • Journal : 電子情報通信学会第1回MWP, THz応用システム共催研究会資料, MWP04-18, THz04-24, pp. 81-84, Fukuoka, Japan, Oct. 2004.
  • No. 38
  • Authors : T. Otsuji
  • Title : Plasma-wave photomixers and their possible terahertz applications
  • Journal : in Proc. of International Conference on Submillimeter Science and Technology, pp. 127-134, Ahmedabad, India, Oct. 2004.
  • No. 37
  • Authors : T. Otsuji, M. Hanabe, J. Shigenobu, S. Takahashi and E. Sano
  • Title : A novel terahertz plasma-wave photomixer with resonant-cavity enhanced structure
  • Journal : in Conf. Dig. the Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics, pp. 331-332, Karlsruhe, Germany, Sept. 2004.
  • No. 36
  • Authors : 浜砂, 高橋, 尾辻, 高田, 松岡
  • Title : GaAs HBTによるSiP用高速ユニバーサル論理レベルインターフェイサ
  • Journal : 2004年電子情報通信学会エレクトロニクスソサエティ大会講演論文集, no .C-12-33, Tokushima, Japan, Sept. 2004.
  • No. 35
  • Authors : T. Otsuji, M. Hanabe and O. Ogawara
  • Title : Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors
  • Journal : Applied Physics Letters, Vol. 85, No. 11, pp. 2119-2121, Sept. 2004.doi: 10.1063/1.1792377
  • No. 34
  • Authors : 宇野, 花辺, 石橋, 尾辻
  • Title : InGaP/InGaAs pHEMTにおけるテラヘルツ帯プラズマ共鳴特性
  • Journal : 2004年秋季第65回応用物理学会学術講演会講演予稿集, pp. 1241-1241, Sendai, Japan, Sept. 2004.
  • No. 33
  • Authors : 石橋, 花辺, 宇野, 尾辻, RYZHII
  • Title : バンド間光学励起がテラヘルツ帯プラズマ共鳴効果に及ぼす影響
  • Journal : 2004年秋季第65回応用物理学会学術講演会講演予稿集, pp. 1241-1241, Sendai, Japan, Sept. 2004.
  • No. 32
  • Authors : 尾辻
  • Title : 半導体2次元電子プラズモンの共鳴効果を利用したテラヘルツ帯フォトミキサー
  • Journal : 2004年秋季第65回応用物理学会学術講演会シンポジウム講演予稿集, pp. 29-29, Sendai, Japan, Sept. 2004.
  • No. 31
  • Authors : V. Ryzhii, I. Khmyrova, M. Ryzhii, A. Satou, T. Otsuji and M. S. Shur
  • Title : Excitation of terahertz plasma oscillations in a field-effect heterostructure device by ultrashort optical pulses: Physics and modeling
  • Journal : in Abstracts of the OSA 14th International Conference on Ultrafast Phenomena, No. TuE45, Niigata, Japan, July 2004.
  • No. 30
  • Authors : 尾辻
  • Title : SiP技術が拓くシステムインテグレーションの可能性
  • Journal : JEITA SoC/SiPソフトウェア調査専門委員会, Kitakyushu, Japan, June 2004.
  • No. 29
  • Authors : M. Hanabe, T. Otsuji and V. Ryzhii
  • Title : Effect of photogenerated electrons on the terahertz plasma-wave resonance in HEMT's under interband photoexcitation
  • Journal : in Proc. SPIE Conference on Microwave and Terahertz Photonics, Vol. 5466, pp. 218-225, Strasbourg, France, April 2004.
  • No. 28
  • Authors : V. Ryzhii, A. Satou, I. Khmyrova, M. Ryzhii, T. Otsuji and M. Shur
  • Title : Analytical and computer models of terahertz HEMT-photomixer
  • Journal : in Proc. SPIE Conference on Microwave and Terahertz Photonics, Vol. 5466, pp. 210-217, Strasbourg, France, April 2004.
  • No. 27
  • Authors : 重信, 後谷, 田元, 尾辻
  • Title : 二次元電子プラズマ共鳴特性の数値解析における電子粘性項の影響
  • Journal : 2004年春季第51回応用物理関連連合講演会講演予稿集, pp. 1545-1545, Tokyo, Japan, March 2004.
  • No. 26
  • Authors : 花辺, 小河原, 石橋, 宇野, 尾辻
  • Title : InGaP/InGaAs pHEMTにおけるテラヘルツ帯プラズマ共鳴の周波数依存性
  • Journal : 2004年春季第51回応用物理学関係連合講演会講予稿集, pp. 1545-1545, Tokyo, Japan, March 2004.
  • No. 25
  • Authors : 高橋, 浜砂, 加藤, 竹田, 山本, 尾辻
  • Title : SiPのためのユニバーサル論理レベルトランスフォーマの設計
  • Journal : 第7回システムLSIワークショップポスター資料集, No. 25, pp. 323-326, Kitakyushu, Japan, Nov. 2003.
  • No. 24
  • Authors : T. Otsuji, Y. Kanamaru, H. Kitamura, M. Matsuoka and O. Ogawara
  • Title : Effect of heterostructure 2-D electron confinement on the tunability of resonant frequencies of terahertz plasma-wave transistors
  • Journal : IEICE Transactions on Electronics, Vol. E86-C, No. 10, pp. 1985-1993, Oct. 2003.
  • No. 23
  • Authors : T. Otsuji, M. Hanabe and O. Ogawara
  • Title : THz plasma-wave resonance of two-dimensional electrons in InGaP/InGaAs HEMT's
  • Journal : in Tech. Dig. the IEEE 11th International Conference on Terahertz Electronics, pp. 39-39, Sendai, Japan, Sept. 2003.
  • No. 22
  • Authors : 花辺, 金丸, 小河原, 尾辻
  • Title : GaAs MESFET におけるテラヘルツ帯電子プラズマ共鳴特性の解析的検討
  • Journal : 2003年秋季第64回応用物理学会学術講演会講演予稿集, pp. 1283-1283, Fukuoka, Japan, Sept. 2003.
  • No. 21
  • Authors : 後谷, 重信, 尾辻
  • Title : 二次元電子プラズマ共鳴とその電磁放射特性に関する数値解析手法の検討
  • Journal : 2003年秋季第64回応用物理学会学術講演会講演予稿集, pp. 1282-1282, Fukuoka, Japan, Sept. 2003.
  • No. 20
  • Title : 尾辻, 超高速エレクトロニクス(11章), 概論(11-1), 電子デバイス技術(11-2), デジタル集積回路技術(11-3), 超高速エレクトロニクス技術ハンドブック, 小林孝嘉監修, サイペック社, Tokyo, Japan, July 2003. (pp .579-607)
  • No. 19
  • Authors : T. Otsuji
  • Title : Present and future of high-speed compound semiconductor IC's
  • Journal : Compound Semiconductor Integrated Circuits, Int. J. High Speed Electron. Sys., Vol. 13, No. 1, pp. 1-25, 2003.DOI: 10.1142/S0129156403001508
  • No. 18
  • Title : T. Otsuji, "Present and future of high-speed compound semiconductor IC's, " Compound Semiconductor Integrated Circuits, Tho Vu ed., Selected Topics in Electronics and Systems, Vol. 29, World Scientific Publishing, Singapore, Singapore, April 2003. (pp. 1-25)
  • No. 17
  • Authors : T. Otsuji, Y. Kanamaru, H. Kitamura, M. Matsuoka and O. Ogawara
  • Title : Effect of heterostructure 2-D electron confinement on the tunability of resonant frequencies of terahertz plasma-wave transistors
  • Journal : in Dig. of the Topical Workshop on Heterostructure Microelectronics, pp. 80-81, Okinawa, Japan, Jan. 2003.
  • No. 16
  • Authors : 尾辻
  • Title : 超高速半導体集積回路設計と光電子融合技術
  • Journal : 応用物理学会応用物理, Vol. 71, No. 11, pp. 1352-1356, Nov. 2002.
  • No. 15
  • Authors : 金丸, 松岡, 小河原, 尾辻
  • Title : 80-nmゲートGaAs MESFETにおけるテラヘルツ帯電子プラズマ共鳴の高調波特性観測
  • Journal : 2002年秋季第63回応用物理学会学術講演会予稿集, pp. 1236-1236, Niigata, Japan, Sept. 2002.
  • No. 14
  • Authors : 松岡, 尾辻
  • Title : 2次元電子液体のテラヘルツプラズマ共鳴を利用したフェムト秒電磁波パルス発生に関する検討
  • Journal : 2002年春季第49回応用物理学関連連合講演会講演予稿集, pp. 1409-1409, Kanagawa, Japan, March 2002.
  • No. 13
  • Authors : 尾辻
  • Title : テラヘルツエレクトロニクスとその次世代フォトニックネットワークへの応用
  • Journal : 電子情報通信学会2002年総合大会講演論文集, No. PC-1-4, Tokyo, Japan, March 2002.
  • No. 12
  • Authors : 金丸, 北村, 尾辻
  • Title : 極短ゲートGaAs MESFETにおけるテラヘルツ帯電子プラズマ共鳴効果の実験的検証
  • Journal : 電気学会計測研究会資料, No. IM-01-41, pp. 1-5, Fukuoka, Japan, Oct. 2001.
  • No. 11
  • Authors : T. Otsuji, S. Nakae and H. Kitamura
  • Title : Numerical analysis for resonance properties of plasma-wave field-effect transistors and their terahertz applications to smart photonic network systems
  • Journal : IEICE Transactions on Electronics, Vol. E84-C, No. 10, pp. 1470-1476, Oct. 2001.
  • No. 10
  • Authors : 北村, 金丸, 中江, 尾辻,
  • Title : 80-nmゲートGaAs MESFETにおけるテラヘルツ帯電子プラズマ共鳴効果の実験的観測
  • Journal : 2001年秋季第62回応用物理学会学術講演会講演予稿集, pp. 1066-1066, Nagoya, Japan, Sept. 2001.
  • No. 9
  • Authors : T. Otsuji
  • Title : Plasma-wave transistors and their possible terahertz applications
  • Journal : in Dig. 2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, pp. 71-77, Cheju, Korea, July 2001.
  • No. 8
  • Authors : T. Otsuji, Y. Kanamaru, H. Kitamura and S. Nakae
  • Title : Terahertz plasma-wave excitation in 80-nm gate-length GaAs MESFET by photomixing long-wavelength CW laser sources
  • Journal : in Dig. 59th Annual Device Research Conference, pp. 97-98, Notre Dame, IN, June 2001.
  • No. 7
  • Authors : T. Otsuji
  • Title : Mixed signal issues for 40-Gbit/s class InP-based multiplexer/demultiplexer IC's
  • Journal : in Dig. IEEE MTT-S International Microwave Symposium Workshop, No. WMC-3, Phoenix, AZ, May 2001.
  • No. 6
  • Authors : 中江, 田垣, 尾辻
  • Title : 擬似バイポーラn-i-n型プラズマ共鳴トランジスタの検
  • Journal : 2001年春季第48回応用物理学関連連合講演会講演予稿集, pp. 1388-1388, Tokyo, Japan, March 2001.
  • No. 5
  • Authors : T. Otsuji
  • Title : Present and future of high-speed electronic devices and IC's
  • Journal : in Dig. Microwave Workshops and Exibition, No. WS10-1, pp. 237-242, Yokohama, Japan, Dec. 2000.
  • No. 4
  • Authors : 尾辻, 中江, 北村, 浦部
  • Title : 電界効果型プラズマ共鳴トランジスタのテラヘルツ電磁波発振/検出特性解析
  • Journal : 電子情報通信学会技術研究報告(信学技報), Vol. 100, No. 405, ED2000-180, MW2000-137, pp. 13-18, Fukuoka, Japan, Nov. 2000.
  • No. 3
  • Authors : 北村, 尾辻
  • Title : 電界効果型トランジスタのテラヘルツ電磁波発振/検出特性に関する研究
  • Journal : 2000年度電子情報通信学会九州支部学生会講演会論文集, pp. 44-44, Fukuoka, Japan, Sept. 2000.
  • No. 2
  • Authors : T. Otsuji, S. Nakae and H. Kitamura
  • Title : Plasma-wave transistors with virtual carrier excitation using polariton-plasmon coupling for terahertz applications
  • Journal : in Dig. Topical Workshop on Heterostructure Microelectronics, pp. 58-59, Kyoto, Japan, Aug. 2000.
  • No. 1
  • Authors : 尾辻
  • Title : テラヘルツへとどけ! 超高速電子デバイスの現状と将来
  • Journal : 鳳龍, No. 49, pp. 1-4, Dec. 1999.
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