ISGD - 2010 International Symposium on Graphene Devices: Technology, Physics, and Modeling

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ISGD2010GP

Welcome

Significant progress in the formation of graphene, the demonstration of its exceptional electronic properties, and the possibility of creating electronic/photonic/spintronic devices on graphene have attracted significant attention in the last five years. The 2nd International Symposium on Graphene Devices: Technology, Physics, and Modeling (ISGD 2010) aims to bring together the researchers actively working on the field of "Graphene Devices: technology, physics, and modeling" so as to stimulate discussions on state of the arts. Based on the successful organization of the 1st ISGD in 2008 at the University of Aizu, Japan, the 2nd ISGD 2010 will be held at the RIEC, Tohoku University, Sendai, Japan on October 27-29th, 2010.

Advance Program now available Click here to download [pdf].

News

  • photo page was added.
  • Nov. 3, 2010  
  • The page of photograph is coming soon.
  • Nov. 1, 2010  
  • JJAP Special Issue page was updated.
  • Oct. 27, 2010  
  • JJAP Special Issue page was added.
  • Oct. 17, 2010  
  • Advance Program was updated.
  • Oct. 13, 2010  
  • Advance Program was added.
  • Oct. 9, 2010  
  • Program page was updated.
  • Instructions for Speakers page was updated.
  • Sep. 27, 2010  
  • Invited Speakers page was updated.
  • Aug. 19, 2010  
  • Abstract deadline has been extended to Sept. 15.
  • Aug. 10, 2010  
  • Registration page was added.
  • Jul. 30, 2010  
  • Accommodation was updated.
  • Jul. 23, 2010  
  • Inquiries page was added.
  • Jul. 22, 2010  
  • Update Travel-Infomation, Accommodation.
  • Jul. 15, 2010  
  • Invited Speaker was added.
  • May 6, 2010  
  • Invited Speaker was added.
  • Apr. 26, 2010  
  • Invited Speaker was added.
  • Apr. 22, 2010  
  • Site update for ISGD2010.
  • Apr. 6, 2010