Otsuji Lab.

Works

No. 265
Authors : Akira Satou, Takumi Negoro, Kenichi Narita, Tomotaka Hosotani, Koichi Tamura, Chao Tang, Tsung-Tse Lin, Paul-Etienne Retaux, Yuma Takida, Hiroaki Minamide, Tetsuya Suemitsu, and Taiichi Otsuji
Title : Gate-readout and a 3D rectification effect for giant responsivity enhancement of asymmetric dual-grating-gate plasmonic terahertz detectors,
Journal : Nanophotonics, vol. 12, no. 23, pp. 4283-4295, Nov. 2023.
DOI: 10.1515/nanoph-2023-0256

No. 264
Authors : Ke Liu, Hirohito Yamada, Katsumi Iwatsuki, and Taiichi Otsuji
Title : Experimental verification and simulation analysis of a battery directly connected DC-microgrid system,
Journal : International Journal of Electrical and Electronic Engineering & Telecommunications, vol. 12, No. 5, pp. 326-333, Sept. 2023.
DOI: 10.18178/ijeetc.12.5.326-333

No. 263
Authors : M. Ryzhii, V. Ryzhii, M.S. Shur, V. Mitin, C. Tang, and T. Otsuji
Title : Terahertz bolometric detectors based on graphene field-effect transistors with the composite h-BN/black-P/h-BN gate layers using plasmonic resonances,
Journal : J. Appl. Phys., vol. 134, pp. 084501-1-9, Aug. 2023.
DOI: 10.1063/5.0160899

No. 262
Authors : V. Ryzhii, C. Tang, T. Otsuji, M.Ryzhii, S.G. Kalenkov, V. Mitin, and M.S. Shur
Title : Micromechanical field-effect transistor terahertz detectors with optical interferometric readout,
Journal : AIP Advances, vol. 13, pp. 085301-1-7, Aug. 2023.
DOI: 10.1063/5.0159610

No. 261
Authors : V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, and M.S. Shur
Title : Resonant plasmonic detection of terahertz radiation in field‑effect transistors with the graphene channel and the black‑AsxP1−x gate layer,
Journal : Sci. Rep., vol. 13, pp. 9665-1-10, June 2023.
DOI: 10.1038/s41598-023-36802-0

No. 260
Authors : V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, and M. S. Shur
Title : Effect of electron thermal conductivity on resonant plasmonic detection in terahertz hot-electron bolometers based on metal/black-AsP/graphene FETs,
Journal : Phys. Rev. Appl., vol. 19, pp. 064033-1-10, June 2023.
DOI: 10.1103/PhysRevApplied.19.064033

No. 259
Authors : Omnia Samy, Mohamed Belmoubarik, Taiichi Otsuji, and Amine El Moutaouakil
Title : A Voltage-Tuned Terahertz Absorber based on MoS2/Graphene Nanoribbon Structure,
Journal : Nanomaterials, vol. 13, pp. 1716-1-14, May 2023.
DOI: 10.3390/nano13111716

No. 258
Authors : V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, and M.S. Shur
Title : Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate,
Journal : J. Appl. Phys., vol. 133, pp. 174501-1-8, May 2023.
DOI: 10.1063/5.0150711

No. 257
Authors : Dmitry Ponomarev, Denis Lavrukhin, Igor Glinskiy, Alexander Yachmenev, Nikolay Zenchenko, Rustam Khabibullin, Yurii Goncharov, Taiichi Otsuji, and Kirill Zaytsev
Title : Enhanced THz radiation through thick plasmonic electrode grating photoconductive antenna with tight photocarrier confinement,
Journal : Opt. Lett., vol. 48, no. 5, pp. 1220-1223, Feb. 2023.
DOI: 10.1364/OL.486431

No. 256
Authors : K. Tamura, C. Tang, D. Ogiura, K. Suwa, H. Fukidome, Y. Takida, H. Minamide, T. Suemitsu, T. Otsuji, and A. Satou
Title : Fast and sensitive terahertz detection in a current-driven epitaxial-graphene asymmetric dual-grating-gate FET structure,
Journal : APL Photonics, vol. 7, iss. 7, pp. 16101-1-10, Dec. 2022.
DOI: 10.1063/5.0122305 (Featured article)

No. 255
Authors : Taiichi Otsuji
Title : Trends and future prospects in the research of graphene plasmonic THz devices,
Journal : IEICE Transactions on Electronics, vol. J105-C, no. 12, pp. 358-366, Dec. 2022.
DOI: 10.14923/transelej.2022JCI0007 (invited, in Japanese)

No. 254
Authors : Lan Wang, Ning An, Sen Gong, Xuan Sheng, Yiwei Li, Baicheng Yao, CuiYu, Zezhao He, Qingbin Liu, Zhihong Feng, Taiichi Otsuji, and Yaxin Zhang
Title : Ultrafast terahertz transparency boosting in graphene meta-cavities,
Journal : Nanophoton., vol. 11, issue 21, pp. 4899-4907, Nov. 2022.
DOI: 10.1515/nanoph-2022-0511

No. 253
Authors : V. Ryzhii, M. Ryzhii, V. Mitin, M.S. Shur, and T Otsuji
Title : Transit-time resonances enabling amplification and generation of terahertz radiation in periodic graphene p-i-n structures with the Zener-Klein interband tunneling,
Journal : J. Appl. Phys., vol. 132, pp. 184504-1-13, Nov. 2022. [arXiv:2208.13525v1]
DOI: 10.1063/5.0124086

No. 252
Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V. Mitin, and M.S. Shur
Title : Resonant plasmonic terahertz detection in gated graphene p-i-n field-effect structures enabled by nonlinearity from Zener-Klein tunneling,
Journal : Phys. Rev. Appl., vol. 18, no. 3, pp. 034022-1-12, Sept. 2022.
DOI:10.1103/PhysRevApplied.18.034022

No. 251
Authors : Y. Takida, K. Nawata, T. Notake, T. Otsuji, and H. Minamide
Title : Optical up-conversion-based cross-correlation for characterization of sub-nanosecond terhaertz-wave pulses,
Journal : Opt. Express, vol. 30, no. 7, pp. 11217-11224, March 2022.
DOI: 10.1364/OE.452310

No. 250
Authors : M. Ryzhii, V. Ryzhii, T. Otsuji, V. Mitin, and M.S. Shur
Title : Coulomb drag and plasmonic effects in graphene field-effect transistors enable resonant terahertz detection,
Journal : Appl. Phys. Lett., vol. 120, iss. 11, pp. 111102-1-6, March 2022.
DOI: 10.1063/5.0087678

No. 249
Authors : D.S. Ponomarev, D.V. Kavrukhin, N.V. Zenchenko, T.V. Frolov, I.A. Glinskiy, R.A. Khabibullin, G.M. Katyba, V.N. Kurlov, T. Otsuji, and K.I. Zaytsev
Title : Boosting photoconductive large-area THz emitter via optical light confinement behind a high refractive sapphire-fiber lens,
Journal : Opt. Lett., vol. 47, no. 7, pp. 1899-1902, Apr. 2022.
DOI: 10.1364/OL.452192

No. 248
Authors : T. Otsuji, S.A. Boubanga-Tombet, A. Satou, D. Yadav, H. Fukidome, T. Watanabe, T. Suemitsu, A.A. Dubinov, V.V. Popov, W. Knap, V. Kachorovskii, K. Narahara, M. Ryzhii, V. Mitin, M.S. Shur, and V. Ryzhii
Title : Graphene-based plasmonic metamaterial for terahertz laser transistors,
Journal : Nanophoton., vol. 11, iss. 9, pp. 1677-1696, Feb. 2022.
DOI: 10.1515/nanoph-2021-0651 (invited, review)

No. 247
Authors : J.A. Delgado-Notario, W. Knap, V. Clericò, J. Salvador-Sánchez, J. Calvo-Gallego, T. Taniguchi, K. Watanabe, T. Otsuji, V.V. Popov, D.V. Fateev, E. Diez, J.E. Velázquez-Pérez and Y.M. Meziani
Title : Enhanced terahertz detection of multigate graphene nanostructures,
Journal : Nanophoton., vol. 11, no. 3, pp. 519-529, Jan. 2022.
DOI: 10.1515/nanoph-2021-0573

No. 246
Authors : V. Ryzhii, M. Ryzhii, A. Satou, V. Mitin, M.S. Shur, and T. Otsuji
Title : Ballistic Injection Terahertz Plasma Instability in Graphene n + -i-n-n + Field-Effect Transistors and Lateral Diodes,
Journal : Physica Status Solidi A: Appl. and Mat. Sci., vol. 219, iss. 1, pp. 2100694-1-8, Jan. 2022.
DOI: 10.1002/pssa.202100694 The top-cover page featured by the authors' original related picture on vol. 219 January 1st issue. DOI: 10.1002/pssa.202270001

No. 245
Authors : V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, V. Mitin, and M.S. Shur
Title : Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures,
Journal : Phys. Rev. Appl., vol. 16, pp. 064054-1-10, Dec. 2021.
DOI: 10.1103/PhysRevApplied.16.064054

No. 244
Authors : M. Shur, G. Aizin, T. Otsuji, and V. Ryzhii
Title : Plasmonic field-effect transistors (TeraFETs) for 6G communications,
Journal : Sensors, vol. 21, pp. 7907-1-16, Nov. 2021. (invited, review)
DOI: 10.3390/s21237907

No. 243
Authors : Stephane Albon Boubanga-Tombet, Akira Satou, Deepika Yadav, Dmitro B But, Wojciech Knap, Vyacheslav V Popov, Iliya V Gorbenko, Valentin Kachorovskii and Taiichi Otsuji
Title : Paving the way for tunable graphene plasmonic THz amplifiers,
Journal : Frontiers in Physics, vol. 9, pp. 726806-1-10, Oct. 2021. (invited, review)
DOI: 10.3389/fphy.2021.726806

No. 242
Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V. Mitin, and M.S. Shur
Title : Coulomb drag by injected ballistic carriers in graphene n+-i-n-n+ structures: doping and temperature effects,
Journal : Physica Status Solidi A: Appl. and Mat. Sci., vol. 218, pp. 2100535-1-7, Sept. 2021.
DOI: 10.1002/pssa.202100535 The top-cover page featured by the authors' original related picture on vol. 219 January 1st issue. DOI: 10.1002/pssa.202170059

No. 241
Authors : V. Ryzhii, M. Ryzhii, V. Mitin, M.S. Shur, and T. Otsuji
Title : Coulomb electron drag mechanism of terahertz plasma instability in n+-i-n-n+ graphene FETs with ballistic injection,
Journal : Appl. Phys. Lett., vol. 119, iss. 9, pp. 093501-1-5, Aug. 2021.
DOI:10.1063/5.0061722

No. 240
Authors : V. Ryzhii, M. Ryzhii, V. Mitin, M.S. Shur, and T. Otsuji
Title : S-shaped current-voltage characteristics of n+-i-n-n+ graphene field-effect transistors due the Coulomb drag of quasi-equilibrium electrons by ballistic electrons,
Journal : Phys. Rev. Appl., vol. 16, iss. 1, pp. 014001-1-12, July 2021.
DOI: 10.1103/PhysRevApplied.16.014001

No. 239
Authors : V. Ryzhii, M. Ryzhii, T. Otsuji, V. Mitin, and M. Shur
Title : Heat capacity of quasi-nonequilibrium electron-hole plasma in graphene layers and graphene bilayers,
Journal : Phys. Rev. B, vol. 103, pp. 245414-1-6, June 2021.
DOI: 10.1103/PhysRevB.103.245414

No. 238
Authors : V. Ryzhii, M. Ryzhii, T. Otsuji, V.G. Leiman, V. Mitin, and M. Shur
Title : Modulation characteristics of uncooled graphene photodetectors,
Journal : J. Appl. Phys., vol. 129, pp. 214503-1-10, June 2021.
DOI: 10.1063/5.0046215

No. 237
Authors : T. Hosotani, A. Satou, and T. Otsuji
Title : Terahertz emission in an InGaAs-based dual-grating-gate high-electron-mobility transistor plasmonic photomixer,
Journal : Appl. Phys. Exp., vol. 14(5), pp. 051001-1-5, April 2021.
DOI: 10.35848/1882-0786/abf02a

No. 236
Authors : A. Satou, Y. Omori, K. Nishimura, T. Hosotani, K. Iwatsuki, and T. Otsuji
Title : Unitraveling-carrier-photodiode-integrated high-electron-mobility transistor for photonic double-mixing,
Journal : J. Lightwave Technol., vol. 39 (10), pp. 3341-3349, May 2021.
DOI: 10.1109/JLT.2021.3060795

No. 235
Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V.G. Leiman, P.P. Maltsev, V.E. Karasik, V. Mitin, and M.S. Shur
Title : Theoretical analysis of injection driven thermal light emitters based on graphene encapsulated by hexagonal boron nitride,
Journal : Opt. Mat. Exp., vol. 11, iss. 2, pp. 468-486, Feb. 2021.
DOI: 10.1364/OME.412973

No. 234
Authors : M. Ryzhii, V. Ryzhii, P.P. Maltsev, D.S. Ponomarev, V.G. Leiman, V.E. Karasik, V. Mitin, M.S. Shur, and T. Otsuji
Title : Far-infrared photodetection in graphene nanoribbon heterostructures with black-phosphorus base layers,
Journal : Opt. Eng. SPIE, vol. 60, no. 8, pp. 082002-1-14, Oct. 2020.
DOI: 10.1117/1.OE.60.8.082002

No. 233
Authors : Kuan-Ting Lin, Hirofumi Nema, Qianchun Weng, Sunmi Kim, Kenta Sugawara, Taiichi Otsuji, Susumu Komiyama, and Yusuke Kajihara
Title : Nanoscale probing of thermally excited evanescent fields in an electrically biased graphene by near-field optical microscopy,
Journal : Appl. Phys. Exp., vol. 13, iss. 9, pp. 096501-1-5, Aug. 2020.
DOI: 10.35848/1882-0786/abae0a

No. 232
Authors : V. Ryzhii, M. Ryzhii, P.P. Maltsev, V.E. Karasik, V. Mitin, M.S. Shur, and T. Otsuji
Title : Far-infrared and terahertz emitting diodes based on graphene/black-P and graphene/MoS2 heterostructures,
Journal : Opt. Exp., vol. 28, no. 16, pp. 24136-1-16, July 2020.
DOI: 10.1364/OE.394662

No. 231
Authors : V. Ryzhii, M. Ryzhii, T. Otsuji, V. Karasik, V. Leiman, V. Mitin, and M. Shur
Title : Multiple heterostructures with van der Waals barrier layers for terahertz superluminescent and laser diodes with lateral/vertical current injection,
Journal : Semicond. Sci. Technol., vol. 35, pp. 085023-1-9, July 2020.
DOI: 10.1088/1361-6641/ab9398

No. 230
Authors : S. Boubanga-Tombet, W. Knap, D. Yadav, A. Satou, D.B. But, V.V. Popov, I.V. Gorbenko, V. Kachorovskii, and T. Otsuji
Title : Room temperature amplification of terahertz radiation by grating-gate graphene structures,
Journal : Phys. Rev. X, vol. 10, iss. 3, pp. 031004-1-19, July 2020.
DOI: 10.1103/PhysRevX.10.031004

No. 229
Authors : J.A. Delgado-Notario, V. Clericò, E. Diez, J.E. Vel'azquez-P'erez, T. Taniguchi, K. Watanabe, T. Otsuji, and Y.M. Meziani
Title : Asymmetric dual grating gates graphene FET for detection of terahertz radiations,
Journal : APL Photon., vol. 5, pp. 066102-1-8, June 2020.
DOI: 10.1063/5.0007249

No. 228
Authors : P. Padmanabhan, S. Boubanga-Tombet, H. Fukidome, T. Otsuji, and R. P. Prasankumar
Title : A graphene-based magnetoplasmonic metasurface for actively tunable transmission and polarization rotation at terahertz frequencies,
Journal : Appl. Phys. Lett., vol. 116, pp. 221107-1-6, June 2020.
DOI: 10.1063/5.0006448

No. 227
Authors : K. Shiga, T. Komiyama, Y. Fuse, H. Fukidome, A. Satou, T. Otsuji, and T. Uchino
Title : Electrical Transport Properties of Gate Tunable Graphene Lateral Tunnel Diodes,
Journal : Jpn. J. Appl. Phys., vol. 59, pp. SIID03-1-6, Apr. 2020.
DOI: 10.35848/1347-4065/ab83de

No. 226
Authors : V. Ryzhii, T. Otsuji, and M.S. Shur
Title : Graphene based plasma-wave devices for terahertz applications,
Journal : Appl. Phys. Lett., vol. 116, pp. 140501-1-6, Apr. 2020. (invited, perspective)
DOI: 10.1063/1.5140712

No. 225
Authors : V. Ryzhii, M. Ryzhii, V. Mitin, M.S. Shur, and T. Otsuji
Title : Far-infrared photodetectors based on graphene/black-AsP heterostructures,
Journal : Opt. Exp., vol. 28, no. 2, pp. 2480-2489, Jan. 2020.
DOI: 10.1364/OE.376299

No. 224
Authors : Y. Moriguchi, Y. Tokizane, Y. Takida, K. Nawata, S. Nagano, M. Sato, T. Otsuji, and H. Minamide
Title : Frequency-agile injection-seeded terahertz-wave parametric generation,
Journal : Opt. Lett., vol. 45, no. 1, pp. 77-80, Jan. 2020.
DOI: 10.1364/OL.45.000077

No. 223
Authors : Alexander Yachmenev, Denis Lavrukhin, Igor Glinskiy, Nikolay Zenchenko, Yurii Goncharov, Igor Spektor, Rustam Khabibullin, Taiichi Otsuji, and Dmitry Ponomarev
Title : Metallic and dielectric metasurfaces in photoconductive terahertz devices: a review,
Journal : Opt. Eng., vol. 59(6), pp. 061608-1-18, June 2020.
DOI: 10.1117/1.OE.59.6.061608

No. 222
Authors : M.Y. Morozov, V.G. Leiman, V.V. Popov, V. Mitin, M.S. Shur, V.E. Karasik, M. Ryzhii, T. Otsuji, V. Ryzhii
Title : Optical pumping in graphene-based terahertz/far-infrared superluminescent and laser heterostructures with graded-gap black-PxAs1−x absorbing-cooling layers,
Journal : Opt. Eng., vol. 59(6), pp. 061606-1-11, June 2020.
DOI: 10.1117/1.OE.59.6.061606

No. 221
Authors : Ponomarev, Dmitry; Lavrukhin, Denis; Yachmenev, Alexander; Khabibullin, Rustam; Semenikhin, Igor; Vyurkov, V; Marem'yanin, Kirill; Gavrilenko, V; Ryzhii, Maxim; Shur, Michael; Otsuji, Taiichi; Ryzhii, Victor
Title : Sub-terahertz FET detector with self-assembled Sn-nanothreads,
Journal : J. Phys. D: Appl. Phys., vol. 53, pp. 075102-1-7, Jan. 2020.
DOI: 10.1088/1361-6463/ab588f

No. 220
Authors : Mikhail Yu. Morozov, Vladimir G. Leiman, Vyacheslav V. Popov, Vladimir Mitin, Michael S. Shur, Valery E. Karasik, Maxim Ryzhii, Taiichi Otsuji, and Victor Ryzhi
Title : Optical pumping in graphene-based terahertz/far-infrared superluminescent and laser heterostructures with graded-gap black-Px As1-x absorbing-cooling layers,
Journal : Opt. Eng., vol. 59(6), pp. 061606-1-11, 2019.
DOI: 10.1117/1.OE.59.6.061606

No. 219
Authors : Alexander Dubinov, Vladimir Aleshkin, Sergey Morozov, Victor Ryzhii, and Taiichi Otsuji
Title : Terahertz plasmon-emitting graphene-channel transistor,
Journal : Opto-Electronics Review, vol. 27, pp. 345-347, Dec. 2019.
DOI: 10.1016/j.opelre.2019.11.003

No. 218
Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, A.A. Dubinov, V. Ya. Aleshkin, V.E. Karasik, and M.S. Shur
Title : Negative terahertz conductivity and amplification of surface plasmons in graphene-black phosphorus injection laser heterostructures,
Journal : Phys. Rev. B, vol. 100, pp. 115436-1-13, Sept. 2019.
DOI: 10.1103/PhysRevB.100.115436

No. 217
Authors : V. Ryzhii, M. Ryzhii, T. Otsuji, V.E. Karasik, V.G. Leiman, V. Mitin, and M.S. Shur
Title : Negative terahertz conductivity at vertical carrier injection in a black-Arsenic-Phosphorus-Graphene heterostructure integrated with a light-emitting diode,
Journal : IEEE J. Select. Top. Quantum Electron., vol. 25, iss. 6, pp. 2000209-1-9, 2019.
DOI: 10.1109/JSTQE.2019.2941922

No. 216
Authors : M.Yu. Morozov, V.V. Popov, M. Ryzhii, V.G. Leiman, V. Mitin, M.S. Shur, T. Otsuji, and V. Ryzhii
Title : Optical pumping through a black-As absorbing-cooling layer in graphene-based heterostructure: thermo-diffusion model,
Journal : Opt. Mat. Exp., vol. 9, iss. 10, pp. 4061-4069, Sept. 2019.
DOI: 10.1364/OME.9.004061

No. 215
Authors : M. Ryzhii, V. Ryzhii, V. Mitin, M.S. Shur, and T. Otsuji
Title : Vertical hot-electron terahertz detectors based on black-As1-xPx/graphene/black-As1-yPy heterostructures,
Journal : Sensors and Materials, vol. 31, no. 7(2), pp. 2271-2279, July 2019.
DOI: 10.18494/SAM.2019.2305

No. 214
Authors : M. Ryzhii, V.V. Mitin, V. Karasik, A. Dubinov, V. Aleshkin, M. Shur, T. Otsuji, V. Leiman, and V. Ryzhii
Title : Concepts of infrared and terahertz photodetectors based on vertical graphene van der Waals and HgTe-CdHgTe heterostructures,
Journal : Opt. Electron. Rev., vol. 27, pp. 219–223, July 2019.
DOI: 10.1016/j.opelre.2019.06.002

No. 213
Authors : V. Ryzhii, M. Ryzhii, D.S. Ponomarev, V.G. Leiman, V. Mitin, M.S. Shur, and T. Otsuji
Title : Negative photoconductivity and hot-carrier bolometric detection of terahertz radiation in graphene-phosphorene hybrid structures,
Journal : J. Appl. Phys., vol.125, pp. 151608-1-11, April 2019.
DOI: 10.1063/1.5054142

No. 212
Authors : M. Ryzhii, T. Otsuji, V. Karasik, V. Leiman, M.S. Shur, V. Ryzhii, and V. Mitin
Title : Characteristics of vertically stacked graphene-layer infrared photodetectors,
Journal : Solid State Electron., vol. 155, pp. 123–128, 2019.
DOI: 10.1016/j.sse.2019.03.021

No. 211
Authors : V. Ryzhii, D.S. Ponomarev, M. Ryzhii, V. Mitin, M.S. Shur, and T. Otsuji
Title : Negative and positive terahertz and infrared photoconductivity in uncooled graphene,
Journal : Opt. Mat. Exp., vol. 9, no. 2, pp. 585-597, 2019.
DOI: 10.1364/OME.9.000585

No. 210
Authors : D.V. Lavrukhin, A.E. Yachmenev, I.A. Glinskiy, R.A. Khabibullin, Y.G. Goncharov, M. Ryzhii, T. Otsuji, I.E. Spector, M. Shur, M. Skorobogatiy, K.I. Zaytsev, and D. Ponomarev
Title : Terahertz photoconductive emitter with dielectric-embedded high-aspect-ratio plasmonic grating for operation with low-power optical pumps,
Journal : AIP Advances, vol. 9, pp. 015112-1-5, 2019.
DOI: 10.1063/1.5081119

No. 209
Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, D.S. Ponomarev, V.E. Karasik, V.G .Leiman, V. Mitin and M.S. Shur
Title : Electrical modulation of terahertz radiation using graphene-phosphorene heterostructures,
Journal : Semicond. Sci. Technol., vol. 33, pp. 124010-1-8, Nov. 2018.
DOI:10.1088/1361-6641/aae9b2

No. 208
Authors : V. Ryzhii, M. Ryzhii, D. Svintsov, V.G. Leiman, P.P. Maltsev, D.S. Ponomarev, V. Mitin, M.S Shur, and T. Otsuji
Title : Real-space-transfer mechanism of negative differential conductivity in gated graphene-phosphorene hybrid structures: Phenomenological heating model,
Journal : J. Appl. Phys., vol. 124, iss. 114501, pp. 114501-1-9, Sept. 2018.
DOI: 10.1063/1.5046135

No. 207
Authors : G. Alymov, V. Vyurkov, V. Ryzhii, A. Satou, and D. Svintsov
Title : Auger recombination in Dirac materials: A tangle of many-body effects,
Journal : Phys. Rev. B, vol. 97, iss. 20, pp. 205411-1-13, May 2018.
DOI: 10.1103/PhysRevB.97.205411

No. 206
Authors : V. Aleshkin, A. Dubinov, S. Morozov, M. Ryzhii, T. Otsuji, V. Mitin, M. Shur, and V. Ryzhii
Title : Interband infrared photodetectors based on HgTe-CdHgTe quantum-well heterostructures,
Journal : Opt. Mat. Exp., vol. 8, no. 5, pp. 1349-1358, Apr. 2018.
DOI: 10.1364/OME.8.001349

No. 205
Authors : I. Gayduchenko, G. Fedorov, M. Moskotin, D. Yagodkin, S. Seliverstov, G. Gol'tsman, A. Kuntsevich, M. Rybin, E. Obraztsova, V. Leiman, M. Shur, T. Otsuji, and V. Ryzhii
Title : Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene based devices,
Journal : Nanotechnology, vol. 29, no. 24, pp. 245204-1-8, April 2018.
DOI: 10.1088/1361-6528/aab7a5

No. 204
Authors : Dmitry Ponomarev, Denis Lavrukhin, Alexander Yachmenev, Rustam Khabibullin, Igor Semenikhin, Vladimir Vyurkov, Maxim Ryzhii, Taiichi Otsuji, and Victor Ryzhii
Title : Lateral terahertz hot-electron bolometer based on an array of Sn nanothreads in GaAs,
Journal : J. Phys. D: Appl. Phys., vol. 51, no. 13, fpp. 135101-1-8, 2018.
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No. 203
Authors : D. Yadav, G. Tamamushi, T. Watanabe, J. Mitsushio, Y. Tobah, K. Sugawara, A.A. Dubinov, A. Satou, M. Ryzhii, V. Ryzhii, and T. Otsuji
Title : Terahertz light-emitting graphene-channel transistor toward single-mode lasing,
Journal : Nanophotonics, vol. 7, iss. 4, pp. 741-752, Apr. 2018.
DOI: 10.1515/nanoph-2017-0106

No. 202
Authors : V. Ryzhii, T. Otsuji, V.E. Karasik, M. Ryzhii, V.G. Leiman, V. Mitin, and M.S. Shur
Title : Comparison of intersubband quantum-well and interband graphene-layer infrared photodetectors,
Journal : IEEE J. Quantum Electron., vol. 54, iss. 2, pp. 40000108-1-8, 2018.
DOI: 10.1109/JQE.2018.2797912

No. 201
Authors : V. Ryzhii, M.S. Shur, M. Ryzhii, V.E. Karasik, and T. Otsuji
Title : Device model for pixelless infrared image up-converters based on polycrystalline graphene heterostructures,
Journal : J. Appl. Phys., vol. 123, pp. 014503-1-9, Jan. 2018.
DOI: 10.1063/1.5011712

No. 200
Authors : O.V. Polischuk, D. V. Fateev, T. Otsuji, and V.V. Popov
Title : Plasmonic amplification of terahertz radiation in a periodic graphene structure with the carrier injection,
Journal : Appl. Phys. Lett., vol. 111, iss. 8, pp. 081110-1-4, Aug. 2017.
DOI: 10.1063/1.4990620

No. 199
Authors : V. Ryzhii, M. Ryzhii, V. Leiman, V. Mitin, M.S. Shur, and T. Otsuji
Title : Effect of doping on the characteristics of infrared photodetectors based on van der Waals heterostructures with multiple graphene layers,
Journal : J. Appl. Phys., vol. 122, pp. 054505-1-8, Aug. 2017.
DOI: 10.1063/1.4997459

No. 198
Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V.E. Karasik, and M.S. Shur
Title : Infrared detection and photon energy up-conversion in graphene layer infrared photodetectors integrated with LEDs based on van der Waals heterostructures: concept, device model, and characteristics,
Journal : Infrared Phys. Technol., vol. 85, pp. 307-314, July 2017.
DOI: 10.1016/j.infrared.2017.07.018

No. 197
Authors : Fuyumi Hemmi, Cedric Thomas, Yi-Chun Lai, Akio Higo, Yoh Watamura, Seiji Samukawa, Taiichi Otsuji, and Tetsuya Suemitsu
Title : Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse,
Journal : Solid-State Electron., vol. 137, pp. 1-5, July 2017.
DOI: 10.1016/j.sse.2017.07.015

No. 196
Authors : K.-S. Kim, G.-H. Park, H. Fukidome, T. Suemitsu, T. Otsuji, W.-J. Cho, and M. Suemitsu
Title : Solution-based formation of high-quality gate dielectrics on epitaxial graphene by microwave-assisted annealing,
Journal : Jpn. J. Appl. Phys., vol. 56, pp. 06GF09-1-5, May 2017.
DOI: 10.7567/JJAP.56.06GF09

No. 195
Authors : V. Ryzhii, M. Ryzhii, D. Svintsov, L. Leiman, V. Mitin, M.S. Shur, and T. Otsuji
Title : Infrared photodetectors based on graphene van der Waals heterostructures,
Journal : Infrared Phys. Technol., vol.84 , pp. 72-81, 2017.
DOI:10.1016/j.infrared.2017.01.016

No. 194
Authors : M. Ryzhii, T. Otsuji, V. Ryzhii, V. Mitin, M.S. Shur, G. Fedorov, and V. Leiman
Title : Dynamic conductivity and two-dimensional plasmons in lateral CNT networks,
Journal : Int. J. High Speed Electron. Sys., vol. 26, no. 01n02, pp. 1740004-1-10, March 2017.
DOI: 10.1142/S0129156417400043

No. 193
Authors : V. Ryzhii, M. Ryzhii, D. Svintsov, V. Leiman, V. Mitin, M.S. Shur, and T. Otsuji
Title : Nonlinear response of infrared photodetectors based on van der Waals heterostructures with graphene layers,
Journal : Opt. Exp., vol. 25, no. 5, pp. 5536-5549, 2017.
DOI: 10.1364/OE.25.005536

No. 192
Authors : A.A. Dubinov, A. Bylinkin, V. Ya Aleshkin, V. Ryzhii, T. Otsuji, and D. Svintsov
Title : Ultra-compact injection terahertz laser using the resonant inter-layer radiative transitions in multi-graphene-layer structure,
Journal : Opt. Exp., vol. 24, iss. 26, pp. 29603-29612, 2016.
DOI:10.1364/OE.24.029603

No. 191
Authors : K. Wakita, E. Sano, M. Ikebe, S. Arnold, T. Otsuji, Y. Takida, and H. Minamide
Title : Design and fabrication of terahertz detectors based on 180-nm CMOS process technology,
Journal : Int. J. High Speed Electron. Sys., vol. 25, no. 03n04, pp. 1640014-1-9, Dec. 2016.
DOI: 10.1142/S0129156416400140

No. 190
Authors : V. Mitin, V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, and M.S. Shur
Title : Plasmonic enhancement of terahertz devices efficiency,
Journal : Int. J. High Speed Electron. Sys., vol. 25, no. 03n04, pp. 1640019-1-7, Dec. 2016.
DOI: 10.1142/S012915641640019X

No. 189
Authors : F. Hemmi, C. Thomas, Y.-C. Lai, A. Higo, A. Guo, S. Warnock, J.A. del Alamo, S. Samukawa, T. Otsuji, and T. Suemitsu
Title : Neutral beam etching for device isolation in AlGaN/GaN HEMTs,
Journal : Phys. Stat. Solidi A, vol. 214, no. 3, pp. 1600617-1-5, 2017.
DOI: 10.1002/pssa.201600617

No. 188
Authors : D. Yadav, S. Boubanga-Tombet, T. Watanabe, S. Arnold, V. Ryzhii, and T. Otsuji
Title : Terahertz wave generation and detection in double-graphene layered van der Waals heterostructures,
Journal : 2D Mater., vol. 3, pp. 045009-1-8, Oct. 2016.
DOI: 10.1088/2053-1583/3/4/045009

No. 187
Authors : T. Hosotani, T. Otsuji, and T. Suemitsu
Title : Achievement of balanced high frequency and high breakdown by InGaAs-based high-electron-mobility transistors with slant field plates,
Journal : Appl. Phys. Exp., vol. 9, pp. 114101-1-3, Oct. 2016.
DOI: 10.7567/APEX.9.114101

No. 186
Authors : D. Svintsov, Zh. Devizorova, T. Otsuji, and V. Ryzhii
Title : Plasmons in tunnel-coupled graphene layers: Backward waves with quantum cascade gain,
Journal : Phys. Rev. B, vol. 94, pp. 115301-1-12, 2016.
DOI: 10.1103/PhysRevB.94.115301

No. 185
Authors : A. Satou, and K. Narahara
Title : Numerical characterization of Dyakonov-Shur instability in gated two-dimensional electron systems,
Journal : Int. j. High-Speed Electron. and Sys., vol. 25, no. 3-4, pp. 1640024-1-10, Sept. 2016.
DOI: 10.1142/s0129156416400243

No. 184
Authors : G.-H. Park, K.-S. Kim, H. Fukidome, T. Suemitsu, T. Otsuji, W.-J. Cho, and M. Suemitsu
Title : Solution-processed Al2O3 gate dielectrics for graphene field-effect transistors,
Journal : Jpn. J. Appl. Phys., vol. 55, pp. 091502-1-5, 2016.
DOI: 10.7567/JJAP.55.0915

No. 183
Authors : Victor Ryzhii, Taiichi Otsuji, Maxim Ryzhii, Vladimir Georgievich Leiman, Georgy Fedorov, Gregory Goltsman, Igor Gayduchenko, Nadezhda Titova, Dominique Coquillat, Dmitry But, Wojciech Knap, Vladimir Mitin, Michael S. Shur
Title : Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection,
Journal : J. Appl. Phys., Vol. 120, pp. 044501-1-13, July 2016.
DOI: 10.1063/1.4959215

No. 182
Authors : A. Satou, G. Tamamushi, K. Sugawara, J. Mitsushio, V. Ryzhii, and T. Otsuji
Title : A fitting model for asymmetric I-V characteristics of graphene FETs for extraction of intrinsic moblities,
Journal : IEEE Trans. Electron Dev., Vol. 63, Iss. 8, pp. 3300-3306, July 2016.
DOI: 10.1109/TED.2016.2578325

No. 181
Authors : V. Ryzhii, M. Ryzhii, M.S. Shur, V. Mitin, A. Satou, and T. Otsuji
Title : Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p-n junctions,
Journal : J. Phys. D: Appl. Phys., vol. 49, pp. 315103-1-14, July 2016.
DOI: 10.1088/0022-3727/49/31/315103

No. 180
Authors : Y. Koseki, V. Ryzhii, T. Otsuji, V. V. Popov, and A. Satou
Title : Giant plasmon instability in dual-grating-gate graphene field-effect transistor,
Journal : Phys. Rev. B, vol. 93, no. 24, pp. 245408-1-5, Jun. 2016.
DOI: 10.1103/PhysRevB.93.245408

No. 179
Authors : G.-H. Park, K.-S. Kim, H. Fukidome, T. Suemitsu, T. Otsuji, W.-J. Cho, and M. Suemitsu
Title : High-performance self-aligned graphene transistors fabricated using contamination- and defect-free process,
Journal : Jpn. J. Appl. Phys., vol. 55, no. 6S1, pp. 06GF11-1-4, May 2016.
DOI: 10.7567/JJAP.55.06GF11

No. 178
Authors : K. Sugawara, T. Kawasaki, G. Tamamushi, H. Mastura, A. Dobroiu, T. Yoshida, T. Suemitsu, H. Fukidome, M. Suemitsu, V. Ryzhii, K. Iwatsuki, S. Kuwano, J.-I. Kani, J. Terada, and T. Otsuji
Title : Photonic frequency double-mixing conversion over the 120-GHz band using InP- and graphene-based transistors,
Journal : IEEE J. Lightwave Technol., Vol. 34, Iss. 8, pp. 2011-2019, 2016. (Top Scored)
DOI: 10.1109/JLT.2015.2505146

No. 177
Authors : T. Itatsu, E. Sano, Y. Yabe, V. Ryzhii, and T. Otsuji
Title : Enhanced terahertz emission from monolayer graphene with metal meesh structure,
Journal : Materials Today: Proceedings, vol. 3, pp. S221-S226, March 2016.
DOI: 10.1016/j.matpr.2016.02.037

No. 176
Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V. Mitin, and M. S. Shur
Title : Resonant plasmonic terahertz detection in vertical graphene-base hot-electron transistors,
Journal : J. Appl. Phys., vol. 118, pp. 204501-1-8, Nov. 2015.
DOI: 10.1063/1.4936265

No. 175
Authors : V. Ryzhii, M. Ryzhii, V. Mitin, M.S. Shur, and T. Otsuji
Title : Negative terahertz conductivity in remotely doped graphene bilayer heterostructures,
Journal : J. Appl. Phys., vol. 118, pp. 183105-1-8, Nov. 2015.
DOI: 10.1063/1.4934856

No. 174
Authors : O.V. Polischuk, V.V. Popov, and T. Otsuji
Title : Superradiant amplification of terahertz radiation by plasmons in inverted graphene with a planar distributed Bragg resonator,
Journal : Semicond., vol. 49, iss. 11, pp. 1468-1472, Nov. 2015.
DOI: 10.1134/S1063782615110172

No. 173
Authors : T. Otsuji
Title : Trends in the Research of Modern Terahertz Detectors: Plasmon Detectors,
Journal : IEEE Trans. Terahz. Sci. Technol., Vol. 5, No. 6, pp. 1110-1120, Nov. 2015.
DOI: 10.1109/TTHZ.2015.2487222

No. 172
Authors : T. Suemitsu, K. Kobayashi, S. Hatakeyama, N. Yasukawa, T. Yoshida, T. Otsuji, D. Piedra, and T. Palacios
Title : A new process approach for slant field plates in GaN-based high-electron-mobility transistors,
Journal : Jpn. J. Appl. Phys., Vol. 55, pp. 01AD02-1-6, Nov. 2015.
DOI: 10.7567/JJAP.55.01AD02

No. 171
Authors : P. Faltermeier, P. Olbrich, W. Probst, L. Schell, T. Watanabe, S.A. Boubanga Tombet, T. Otsuji, and S.D. Ganichev
Title : Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors,
Journal : J. Appl. Phys., Vol. 118, Iss. 8, pp. 084301-1-6, 2015.
DOI: 10.1063/1.4928969

No. 170
Authors : V. Ya Aleshkin, A.A. Dubinov, M. Ryzhii, V. Ryzhii, and T. Otsuji
Title : Electron capture in van der Waals graphene-based heterostructures with WS2 barrier layers,
Journal : J. Phys. Soc. Jpn., Vol. 84, No. 9, pp. 094703-1-7, Aug. 2015.
DOI: 10.7566/JPSJ.84.094703

No. 169
Authors : Ryzhii V., Otsuji T., Ryzhii M., Mitin V., Shur M.S.
Title : Effect of indirect interband transitions on terahertz conductivity in
Journal : ecorated" graphene bilayer heterostructures," Lithuanian J. Phys., vol. 55, No. 4, pp. 243–248, 2015.
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No. 168
Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V. Ya Aleshkin, A.A. Dubinov, V. Mitin, and M.S. Shur
Title : Vertical electron transport in van der Waals heterostructures with graphene layers,
Journal : J. Appl. Phys., Vol. 117, Iss. 15, pp. 154504-1-9, April 2015.
DOI: 10.1063/1.4918313

No. 167
Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V.Ya Aleshkin, A.A. Dubinov, D. Svintsov, V. Mitin, and M.S. Shur
Title : Graphene vertical cascade interband terahertz and infrared photodetectors,
Journal : 2D Materials, Vol. 2, No. 2, pp. 025002-1-10, April 2015.
DOI: 10.1088/2053-1583/2/2/025002

No. 166
Authors : D. Svintsov, T. Otsuji, V. Mitin, M.S. Shur, and V. Ryzhii
Title : Negative terahertz conductivity in disordered graphene bilayers with population inversion,
Journal : Appl. Phys. Lett., Vol. 106, Iss. 11, pp. 113501-1-5, March 2015.
DOI: 10.1063/1.4915314

No. 165
Authors : S. Takabayashi, M. Yang, T. Eto, H. Hayashi, S. Ogawa, T. Otsuji, and Y. Takakuwa
Title : Controlled oxygen-doped diamond-like carbon film synthesized by photoemission-assisted plasma,
Journal : Diamond and Related Materials, Vol. 53, pp. 11-17, March 2015.
DOI: 10.1016/j.diamond.2015.01.001

No. 164
Authors : M.Y. Morozov, A.R. Davoyan, I.M. Moiseenko, A. Satou, T. Otsuji, and V.V. Popov
Title : Active guiding of Dirac Plasmons in graphene,
Journal : Appl. Phys. Lett., Vol. 106, pp. 061105-1-5, Feb. 2015.
DOI: 10.1063/1.4907644

No. 163
Authors : D. Svintsov, V.G. Leiman, V. Ryzhii, T. Otsuji, and M.S. Shur
Title : Graphene nanoelectromechanical resonators for detection of modulated terahertz radiation,
Journal : J. Phys. D, Vol. 47, Iss. 50, pp. 505105-1-7, Nov. 2014.
DOI: 10.1088/0022-3727/47/50/505105

No. 162
Authors : D. Svintsov, V. Ryzhii, and T. Otsuji
Title : Negative dynamic Drude conductivity in pumped graphene,
Journal : Appl. Phys. Express, Vol. 7, Iss. 11, pp. 115101-1-4, Nov. 2014.
DOI: 10.7567/APEX.7.115101

No. 161
Authors : V. Ryzhii, A. Satou, T. Otsuji, M. Ryzhii, V. Mitin and M. S. Shur
Title : Graphene vertical hot-electron terahertz detectors,
Journal : J. Appl. Phys., Vol. 116, Iss. 11, pp. 114504-1-9, 2014.
DOI: 10.1063/1.4895738

No. 160
Authors : Susumu Takabayashi, Meng Yang, Shuichi Ogawa, Hiroyuki Hayashi, Radek Jesko, Taiichi Otsuji, Yuji Takakuwa
Title : Relationship between the structure and electrical characteristics of diamond-like carbon films,
Journal : J. Appl. Phys., Vol. 116, Iss. 09, pp. 093507-1-11, Sept. 2014. doi: 10.1063/1.4894626

No. 159
Authors : T. Kawasaki, K. Sugawara, A. Dobroiu, T. Eto, Y. Kurita, K. Kojima, Y. Yabe, H. Sugiyama, T. Watanabe, T. Suemitsu, V. Ryzhii, K. Iwatsuki, Y. Fukada, J. Kani, J. Terada, N. Yoshimoto, K. Kawahara, H. Ago, and T. Otsuji
Title : Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band,
Journal : Solid-State Electron., Vol. 103, pp. 216-221, Jan. 2015.
DOI: 10.1016/j.sse.2014.07.009

No. 158
Authors : D. Svintsov, V. Ryzhii, A. Satou, T. Otsuji, and V. Vyurkov
Title : Carrier-carrier scattering and negative dynamic conductivity in pumped graphene,
Journal : Opt. Express, Vol. 22, No. 17, pp. 19873-19886, Aug. 2014.
DOI: 10.1364/OE.22.019873

No. 157
Authors : Kengo Kobayashi, Shinya Hatakeyama, Tomohiro Yoshida, Yuhei Yabe, Daniel Piedra, Tomás Palacios, Taiichi Otsuji, Tetsuya Suemitsu
Title : Improved breakdown voltage and RF characteristics in AlGaN/GaN high electron mobility transistors achieved by slant field plates,
Journal : Appl. Phys. Express, Vol. 7, No. 09, pp. 096501-1-4, Aug. 2014.
DOI: 10.7567/APEX.7.096501

No. 156
Authors : Kengo Kobayashi, Shinya Hatakeyama, Tomohiro Yoshida, Daniel Piedra, Tomás Palacios, Taiichi Otsuji, Tetsuya Suemitsu
Title : Current collapse suppression in AlGaN/GaN HEMTs by means of slant field plates fabricated by multi-layer SiCN,
Journal : Solid State Electron.,Vol. 101, pp. 63-69, Nov. 2014.
DOI: 10.1016/j.sse.2014.06.022

No. 155
Authors : S.A. Boubanga Tombet, Y. Tanimoto, A. Satou, T. Suemitsu, Y. Wang, H. Minamide, H. Ito, D. V. Fateev, V.V. Popov, and T. Otsuji
Title : Current driven detection of terahertz radiation using a dual-grating-gate plasmonic detector,
Journal : Appl. Phys. Lett., Vol. 104, Iss. 26, pp. 262104-1-4, July 2014.
DOI: 10.1063/1.4886763

No. 154
Authors : Y. Kurita, G. Ducournau, D. Coquillat, A. Satou, K. Kobayashi, S.A. Boubanga-Tombet, Y.M. Meziani, V.V. Popov, W. Knap, T. Suemitsu, and T. Otsuji
Title : Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics,
Journal : Appl. Phys. Lett., Vol. 104, Iss. 25, pp. 251114-1-4, June 2014.
DOI: 10.1063/1.4885499

No. 153
Authors : T. Yoshida, K. Kobayashi, T. Otsuji, and T. Suemitsu
Title : Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs,
Journal : Solid State Electron., Vol. 102, pp. 93-97, Dec. 2014.
DOI: 10.1016/j.sse.2014.06.005

No. 152
Authors : T. Otsuji, A. Satou, S. Boubanga Tombet, A.A. Dubinov, V.V. Popov, V. Ryzhii, and M.S. Shur
Title : Graphene active plasmonics for new types of terahertz lasers,
Journal : Int. J. High Speed Electron. Sys., Vol. 23, Nos. 3 & 4, pp. 1450016-1-17, Nov. 2014.
DOI: 10.1142/S0129156414500165

No. 151
Authors : V. Ryzhii, T. Otsuji, V. Ya Aleshkin, A.A. Dubinov, M. Ryzhii, V. Mitin, and M.S. Shur
Title : Voltage-tunable terahertz and infrared photodetectors based on double-graphene-layer structures,
Journal : Appl. Phys. Lett., vol. 104, pp. 163505-1-4, April 2014.
DOI: 10.1063/1.4873114

No. 150
Authors : A. Satou, Y. Koseki, V. Ryzhii, V. Vyurkov, and T. Otsuji
Title : Damping mechanism of terahertz plasmons in graphene on heavily doped substrate,
Journal : J. Appl. Phys., Vol. 115, Iss. 10, pp. 104501-1-7, 2014.
DOI: 10.1063/1.4867971

No. 149
Authors : T. Otsuji, V. Popov, and V. Ryzhii
Title : Active graphene plasmonics for terahertz device applications,
Journal : J. Phys. D., Vol. 47, Iss. 09, pp. 094006-1-10, 2014.
DOI: 10.1088/0022-3727/47/9/094006

No. 148
Authors : D. Svintsov, V. Vyurkov, A. Orlikovsky, V. Ryzhii, and T. Otsuji
Title : All-graphene field-effect transistor based on lateral tunnelling,
Journal : J. Phys. D: Appl. Phys., Vol. 47, Iss. 09, pp. 094002-1-8, 2014.
DOI: 10.1088/0022-3727/47/9/094002

No. 147
Authors : A. Satou, F.T. Vasko, T. Otsuji, and V.V. Mitin
Title : Transient stimulated emission from multi-split-gated graphene structure,
Journal : J. Phys. D: Appl. Phys., vol. 47, pp. 055103-1-8, Dec. 2013.
DOI: 10.1088/0022-3727/47/5/055103

No. 146
Authors : A.A. Dubinov, V. Ya. Aleshkin, V. Ryzhii, M.S. Shur, and T. Otsuji
Title : Surface-plasmons lasing in double-graphene-layer structures,
Journal : J. Appl. Phys., Vol. 115, Iss. 04, pp. 044511-1-6, 2014.
DOI: 10.1063/1.4863797

No. 145
Authors : M. Ryzhii, V. Ryzhii, T. Otsuji, P. P Maltsev, V.G Leiman, N. Ryabova, and V. Mitin
Title : Double injection, resonant-tunneling recombination, and current-voltage characteristics in double-graphene-layer structures,
Journal : J. Appl. Phys., Vol. 115, pp. 024506-1-8, Jan. 2014.
DOI: 10.1063/1.4861734

No. 144
Authors : D. Svintsov, V. Vyurkov, V. Ryzhii, and T. Otsuji
Title : Hydrodynamic electron transport and nonlinear waves in graphene,
Journal : Phys. Rev. B, Vol. 88, Iss. 24, pp. 245444-1-8, Dec. 2013.
DOI: 10.1103/PhysRevB.88.245444

No. 143
Authors : A.R. Davoyan, M.Y. Morozov, V.V. Popov, A. Satou, and T. Otsuji
Title : Graphene surface emitting terahertz laser: Diffusion pumping concept,
Journal : Appl. Phys. Lett., Vol. 103, Iss. 25, pp. 251102-1-5, 2013.
DOI: 10.1063/1.4850522

No. 142
Authors : V. Ryzhii, A.A. Dubinov, T. Otsuji, V.Ya. Aleshkin, M. Ryzhii, and M. Shur
Title : Double-graphene-layer terahertz laser: concept, characteristics, and comparison,
Journal : Opt. Express, Vol. 21, No. 25, pp. 31567-31577, Dec. 2013.
DOI:10.1364/OE.21.031567

No. 141
Authors : T. Otsuji, T. Watanabe, S.A. Boubanga Tombet, A. Satou, V. Ryzhii, V. Popov, and W. Knap
Title : Emission and detection of terahertz radiation using two-dimensional plasmons in semiconductor nanoheterostructures for nondestructive evaluations,
Journal : Opt. Eng., Vol. 53, Iss. 3, pp. 031206-1-13, March 2014. doi: 10.1117/1.OE.53.3.031205

No. 140
Authors : V.V. Popov, O.V. Polischuk, S.A. Nikitov, V. Ryzhii, T. Otsuji and M.S. Shur
Title : Amplification and lasing of terahertz radiation by plasmons in graphene with a planar distributed Bragg resonator,
Journal : Journal of Optics, Vol. 15, pp. 114009-1-8, Oct. 2013.
DOI: 10.1088/2040-8978/15/11/114009

No. 139
Authors : M. Yang, S. Takabayashi, S. Ogawa, H. Hayashi, R. Jesko, T. Otsuji, and Y. Takakuwa
Title : Formation of diamond-like carbon films by photoemission-assisted plasma-enhanced chemical vapor deposition,
Journal : Jpn. J. Appl. Phys., Vol. 52, pp. 110123-1-11, Oct. 2013.
DOI: 10.7567/JJAP.52.110123

No. 138
Authors : V. Ryzhii, A.A. Dubinov, V.Ya. Aleshkin, M. Ryzhii, and T. Otsuji
Title : Injection terahertz laser using the resonant inter-layer radiative transitions in double-graphene-layer structure,
Journal : Appl. Phys. Lett., Vol. 103, pp. 163507-1-4, Oct. 2013.
DOI: 10.1063/1.4826113

No. 137
Authors : V. Ryzhii, A. Satou, T. Otsuji, M. Ryzhii, V. Mitin and M.S. Shur
Title : Dynamic effects in double graphene-layer structures with inter-layer resonant-tunneling negative conductivity,
Journal : J. Phys. D: Appl. Phys., Vol. 46, Iss. 31, pp. 315107-1-6, July 2013.
DOI: 10.1088/0022-3727/46/31/315107

No. 136
Authors : T. Watanabe, T. Fukushima, Y. Yabe, S.A. Boubanga Tombet, A. Satou, A.A. Dubinov, V. Ya Aleshkin, V. Mitin, V. Ryzhii, and T. Otsuji
Title : The gain enhancement effect of surface plasmon polaritons on terahertz stimulated emission in optically pumped monolayer graphene,
Journal : New Journal of Physics, Vol. 15, Iss. 7, pp. 075003-1-11, July 2013.
DOI:10.1088/1367-2630/15/7/075003

No. 135
Authors : V. Ryzhii, T. Otsuji, N. Ryabova, M. Ryzhii, V. Mitin, and V. Karasik
Title : Concept of infrared photodetector based on graphene-graphene nanoribbon structure,
Journal : Infrared Phys. Technol., Vol. 59, pp. 137-141, July 2013.
DOI: 10.1016/j.infrared.2012.12.028

No. 134
Authors : H. Fukidome, Y. Kawai, H. Handa, H. Hibino, H. Miyashita, M. Kotsugi, T. Ohkochi, M. Jung, T. Suemitsu, T. Kinoshita, T. Otsuji, and M. Suemitsu
Title : Site-selective epitaxy of graphene on Si wafers,
Journal : Proceedings of the IEEE, Vol. 101, pp. 1557-1566, 2013. (invited)
DOI: 10.1109/JPROC.2013.2259131

No. 133
Authors : M.-H. Jung, G.-H. Park, T. Yoshida, H. Fukidome, T. Suemitsu, T. Otsuji, and M. Suemitsu
Title : High-Performance Graphene Field-Effect Transistors with Extremely small access length using self-aligned source and drain technique,
Journal : Proceedings of the IEEE, Vol. 101, pp. 1603-1608, 2013. (invited)
DOI: 10.1109/JPROC.2013.2258651

No. 132
Authors : V. Ryzhii, I. Semenikhin, M. Ryzhii, D. Svintsov, V. Vyurkov, A. Satou, and T. Otsuji
Title : Double injection in graphene p-i-n structures,
Journal : J. Appl. Phys., Vol. 113, Iss. 24, pp. 244505-1-9, June 2013.
DOI: 10.1063/1.4812494

No. 131
Authors : V. Ryzhii, M. Ryzhii, V. Mitin, M.S. Shur, A. Satou, and T. Otsuji
Title : Terahertz photomixing using plasma resonances in double-graphene layer structures,
Journal : J. Appl. Phys., Vol. 113, Iss. 17, pp. 174506-1-7, May 2013.
DOI: 10.1063/1.4804063

No. 130
Authors : A. Satou, V. Ryzhii, Y. Kurita, and T. Otsuji
Title : Threshold of terahertz population inversion and negative dynamic conductivity in graphene under pulse photoexcitation,
Journal : J. Appl. Phys., Vol. 113, Iss. 14, pp. 143108-1-7, April 2013.
DOI: 10.1063/1.4801916

No. 129
Authors : D. Svintsov, V. Vyurkov, V. Ryzhii, and T. Otsuji
Title : Voltage-controlled surface plasmon-polaritons in double graphene layer structures,
Journal : J. Appl. Phys., Vol. 113, pp. 053701-1-5, Feb. 2013.
DOI: 10.1063/1.4789818

No. 128
Authors : T. Otsuji, T. Watanabe, S. Boubanga Tombet, A. Satou, W. Knap, V. Popov, M. Ryzhii, and V. Ryzhii
Title : Emission and detection of terahertz radiation using two-dimensional electrons in III-V semiconductors and graphene,
Journal : IEEE Trans. Terahertz Sci. Technol., Vol. 3, No. 1, pp. 63-71, Jan. 2013. doi: 10.1109/TTHZ.2012.2235911

No. 127
Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, N. Ryabova, S.O. Yurchenko, V. Mitin, and M.S. Shur
Title : Graphene terahertz uncooled bolometers,
Journal : J. Phys. D: Appl. Phys., Vol. 46, pp. 065102-1-5, Jan. 2013.
DOI:10.1088/0022-3727/46/6/065102

No. 126
Authors : T. Yoshida, K. Kobayashi, T. Otsuji, and T. Suemitsu
Title : InGaAs HEMTs with T-gate electrodes formed by multi-layer SiCN molds,
Journal : Physica Status Solidi C, Vol. 10, No. 5, pp. 773-776, Feb. 2013. doi: 10.1002/pssc.201200610

No. 125
Authors : K. Kobayashi, M. Kano, T. Yoshida, R. Katayama, T. Matsuoka, T. Otsuji, and T. Suemitsu
Title : AlGaN/GaN MIS-　gate HEMTs with SiCN gate stacks,
Journal : Phys. Status Solidi C, Vol. 10, No. 5, pp. 790-793, Feb. 2013. doi: 10.1002/pssc.201200609

No. 124
Authors : V. L. Semenenko, V. G. Leiman, A. V. Arsenin, V. Mitin, M. Ryzhii, T. Otsuji, and V Ryzhii
Title : Effect of self-consistent electric field on characteristics of graphene p-i-n tunneling transit-time diodes,
Journal : J. Appl. Phys., Vol. 113, pp. 024503-1-7, Jan. 2013.
DOI: 10.1063/1.4773836

No. 123
Authors : T. Watanabe, S. Boubanga Tombet, Y. Tanimoto, D. Fateev, V. Popov, D. Coquillat, W. Knap,Y. Meziani, Y. Wang, H. Minamide, H. Ito, and T. Otsuji
Title : InP- and GaAs-based plasmonic high-electron-mobility transistors for room-temperature ultrahigh-sensitive terahertz sensing and imaging,
Journal : IEEE Sensors J., Vol. 13, No. 1, pp. 89-99, Jan. 2013. doi: 10.1109/JSEN.2012.2225831

No. 122
Authors : T. Otsuji, S. Boubanga Tombet, A. Satou, M. Ryzhii, and V. Ryzhii
Title : Terahertz-wave generation using graphene: toward new types of terahertz lasers,
Journal : IEEE J. Selected Topics in Quantum Electron., Vol. 19, Iss. 1, pp. 8400209-1-9, Jan.-Feb. 2013. (invited) doi: 10.1109/JSTQE.2012.2208734

No. 121
Authors : F.T. Vasko, V.V. Mitin, V. Ryzhii, and T. Otsuji
Title : Interplay of intra- and interband absorption in a disordered graphene,
Journal : Phys. Rev. B, Vol. 86, iss. 23, pp. 235424-1-7, Dec. 2012.
DOI: 10.1103/PhysRevB.86.235424

No. 120
Authors : T. Otsuji, S. A. Boubanga Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhii, and V. Ryzhii
Title : Graphene materials and devices in terahertz science and technology,
Journal : MRS Bulletin, Vol. 37, No. 12, pp. 1235-1243, Dec. 2012. (invited) doi: 10.1557/mrs.2012.241

No. 119
Authors : D. But, N. Dyakonova, D. Coquillat, F. Teppe, W. Knap, T. Watanabe, Y. Tanimoto, S. Boubanga Tombet and T. Otsuji
Title : THz double-grating gate transistor detectors in hiigh magnetic fields,
Journal : Acta Physica Polonica A, Vol. 122, No. 6, pp. 1080-1082, Dec. 2012.
DOI:

No. 118
Authors : V.V. Popov, O.V. Polischuk, A.R. Davoyan, V. Ryzhii, T. Otsuji, and M.S. Shur
Title : Plasmonic terahertz lasing in an array of graphene nanocavities,
Journal : Phys. Rev. B, Vol. 86, iss. 19, pp. 195437-1-6, Nov. 2012. doi: 10.1103/PhysRevB.86.195437

No. 117
Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, V. G. Leiman, S. O. Yurchenko, V. Mitin, and M. S. Shur
Title : Effect of plasma resonances on dynamic characteristics of double graphene-layer optical modulator,
Journal : J. Appl. Phys., Vol. 112, Issue 10, pp. 104507-1-7, Nov. 2012. doi: 10.1063/1.4766814

No. 116
Authors : A. El Moutaouakil, T. Suemitsu, T. Otsuji, D. Coquillat, and W. Knap
Title : Nonresonant detection of terahertz radiation in high-electron-mobility transistor structure using InAlAs/InGaAs/InP material systems at room temperature,
Journal : Journal of Nanoscience and Nanotechnology, Vol. 12, No. 8, pp. 6737-6740, Aug. 2012.
DOI: 10.1166/jnn.2012.4575

No. 115
Authors : Y. Takatsuka, K. Takahagi, E. Sano, V. Ryzhii, and T. Otsuji
Title : Gain enhancement in graphene terahertz amplifiers with resonant structures,
Journal : J. Appl. Phys. Vol. 112, pp. 033103-1-4, Aug. 1, 2012.
DOI: 10.1063/1.4742998

No. 114
Authors : T. Watanabe, S. Boubanga Tombet, Y. Tanimoto, Y. Wang, H. Minamide, H. Ito, D. Fateev, V. Popov, D. Coquillat, W. Knap,Y. Meziani, and T. Otsuji
Title : Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure,
Journal : Solid-State Electron. Vol. 78, pp. 109-114, June 2012. doi: 10.1016/j.sse.2012.05.047

No. 113
Authors : V. Ryzhii, T. Otsuji, M. Ryzhii, and M.S. Shur
Title : Double graphene-layer plasma resonances terahertz detector,
Journal : J. Phys. D: Applied Physics, Vol. 45, No. 30, pp. 302001-1-6, July 2012. (invited) doi:10.1088/0022-3727/45/30/302001

No. 112
Authors : T. Otsuji, S. A. Boubanga Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhii, and V. Ryzhii
Title : Graphene-based devices in terahertz science and technology,
Journal : J. Phys. D: Applied Physics, Vol. 45, No. 30, pp. 303001-1-9, July 2012. (invited) doi:10.1088/0022-3727/45/30/303001

No. 111
Authors : T. Otsuji, S. Boubanga-Tombet, A. Satou, M. Suemitsu, and V. Ryzhii
Title : Spectroscopic study on ultrafast carrier dynamics and terahertz amplified stimulated emission in optically pumped graphene,
Journal : J. Infrared Milli. Terahz. Waves, Vol. 33, pp. 825-838, 2012.
DOI: 10.1007/s10762-012-9908-8

No. 110
Authors : M. Yang, S. Ogawa, S. Takabayashi, T. Otsuji, and Y. Takakuwa
Title : Synthesis of diamond-like carbon films on Si substrates by photoemission-assisted plasma-enhanced chemical vapor deposition,
Journal : Thin Solid Films, Vol. 523, pp. 25-28, May 2012. doi:10.1016/j.tsf.2012.05.059

No. 109
Authors : D. Svintsov, V. Vyurkov, S. Yurchenko, T. Otsuji, and V. Ryzhii
Title : Hydrodynamic model for electron-hole plasma in graphene,
Journal : J. Appl. Phys. Vol. 111, iss. 083715 (10 pages) April 2012.
DOI: 10.1063/1.4705382

No. 108
Authors : V. Ryzhii, N. Ryabova, M. Ryzhii, N. V. Baryshnikov, V. E. Karassik, V. Mitin and T. Otsuji
Title : Terahertz and infrared photodetectors based on multiple graphene layer and nanoribbon structures,
Journal : Opto-electronics Review, Vol. 20, No. 1, pp. 15-25, March 2012.
DOI: 10.2478/s11772-012-0009-y (invited)

No. 107
Authors : V. V. Popov, D. V. Fateev, O. V. Polischuk, S. A. Nikitov, T. Otsuji, M. S. Shur
Title : Resonant properties of the planar plasmonic crystal on a membrane substrate,
Journal : Bulletin of the Russian Academy of Sciences: Physics, Vol. 76, Iss. 2, pp. 229-232, Feb. 2012.

No. 106
Authors : S. Boubanga-Tombet, S. Chan, T. Watanabe, A. Satou, V. Ryzhii, and T. Otsuji
Title : Ultrafast carrier dynamics and terahertz emission in optically pumped graphene at room temperature,
Journal : Physical Review B, Vol. 85, Iss. 3, pp. 035443-1-6, 2012.
DOI: 10.1103/PhysRevB.85.035443

No. 105
Authors : T. Yoshida, K. Akagawa, T. Otsuji, and T. Suemitsu
Title : InGaAs HEMTs with T-gate electrodes fabricated using HMDS SiN mold,
Journal : Phys. Status Solidi C, Vol. 9, No. 2, pp. 354-356, Jan. 2012. doi: 10.1002/pssc.201100272

No. 104
Authors : S. Takabayashi, S. Ogawa, Y. Takakuwa, H.-C. Kang, R. Takahashi, H. Fukidome, M. Suemitsu, T. Suemitsu, T. Otsuji
Title : Carbonaceous field effect transistor with graphene and diamondlike carbon,
Journal : Diamond and Related Materials, Vol. 22, pp. 118-123, Jan. 2012. doi: 10.1016/j.diamond.2011.12.037

No. 103
Authors : V.V. Popov, D.V. Fateev, T. Otsuji, Y.M. Meziani, D. Coquillat, W. Knap
Title : Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell,
Journal : Appl. Phys. Lett., Vol. 99, Iss. 24, pp. 243504-1-4, 2011. doi:10.1063/1.3670321

No. 102
Authors : J. Torres, L. Varani, F. Teppe, W. Knap, S. Boubanga-Tombet, T. Otsuji, P. Shiktorov, E. Starikov, and V. Gružinskis
Title : Investigation of 2D plasma resonances in HEMTs by using electro-optical sampling technique,
Journal : Lithuanian Journal of Physics, Vol. 51, No. 4, pp. 324-329, Dec. 2011. doi: 10.3952/lithjphys.51405

No. 101
Authors : V. Ryzhii, M. Ryzhii, V. Mitin, and T. Otsuji
Title : Toward the creation of terahertz graphene injection laser,
Journal : J. Appl. Phys., Vol. 110, iss. 9, pp. 094503-1-9, 2011. http://dx.doi.org/10.1063/1.3657853

No. 100
Authors : V. Ryzhii, M. Ryzhii and T. Otsuji
Title : Tunneling recombination in optically pumped graphene with electron-hole puddles,
Journal : Appl. Phys. Lett., Vol. 99, iss. 17, pp. 173504-1-3, 2011.
DOI: 10.1063/1.3656712

No. 99
Authors : T. Suemitsu, M. Kubo, H. Handa, R. Takahashi, H. Fukidome, M. Suemitsu, and T. Otsuji
Title : Graphene/SiC/Si FETs with SiCN Gate Stack,
Journal : ECS Transactions, Vol. 41, No. 6, pp. 249-254, 2011. doi: 10.1149/1.3629973

No. 98
Authors : H. Fukidome, R. Takahashi, S. Abe, K. Imaizumi, H. Handa, H.-C. Kang, H. Karasawa, T. Suemitsu, T. Otsuji, Y. Enta, A. Yoshigoe, Y. Teraoka, M. Kotsugi, T. Ohkouchi, T. Kinoshita and M. Suemitsu
Title : Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications,
Journal : J. Mater. Chem.: Journal of Materials Chemistry, Vol. 21, Iss. 43, pp. 17242-17248, 2011.
DOI: 10.1039/C1JM12921J

No. 97
Authors : V. Ryzhii, M. Ryzhii, V. Mitin, A. Satou, and T. Otsuji
Title : Effect of heating and cooling of photogenerated electron-hole plasma in optically pumped graphene on population inversion,
Journal : Jpn. J. Appl. Phys., Vol. 50, No. 9, pp. 094001-1-9, 2011. doi: 10.1143/JJAP.50.094001

No. 96
Authors : Y.M. Meziani, E. Garcia, E. Velazquez, E. Diez, A. El Moutaouakil, T. Otsuji, and K. Fobelets
Title : Strained silicon modulation field-effect transistor as a new sensor of terahertz radiation,
Journal : Semicond. Sci. Technol., Vol. 26, No. 10, pp. 105006-1-4, 2011. doi:10.1088/0268-1242/26/10/105006

No. 95
Authors : A. El Moutaouakil, H.-C. Kang, H. Handa, F. Fukidome, T. Suemitsu, E. Sano, M. Suemitsu, and T. Otsuji
Title : Room temperature logic Inverter on epitaxial graphene-on-silicon device,
Journal : Jpn. J. Appl. Phys. Vol. 50, No. 7, pp. 070113-1-4, July 2011. doi: 10.1143/JJAP.50.070113

No. 94
Authors : M. Ryzhii, T. Otsuji, V. Mitin, and V. Ryzhii
Title : Characteristics of p-i-n terahertz and infrared photodiodes based on multiple graphene layer structures,
Journal : Jpn. J. Appl. Phys., Vol. 50, No. 7, pp. 070117-1-4, July 2011. doi: 10.1143/JJAP.50.070117

No. 93
Authors : M.-H. Jung, H. Handa, R. Takahashi, H. Fukidome, T. Suemitsu, T. Otsuji, and M. Suemitsu
Title : Investigation of graphene field effect transistors with Al2O3 gate dielectrics formed by metal oxidation,
Journal : Jpn. J. Appl. Phys. Vol. 50, No. 7, pp. 070111-1-5, July 2011. doi: 10.1143/JJAP.50.070111

No. 92
Authors : M.-H. Jung, H. Handa, R. Takahashi, H. Fukidome, T. Suemitsu, T. Otsuji, and M. Suemitsu
Title : Polymer material as a gate dielectric for graphene field-effect-transistor applications,
Journal : Jpn. J. Appl. Phys. Vol. 50, No. 7, pp. 070107-1-5, July 2011. doi: 10.1143/JJAP.50.070107

No. 91
Authors : M. Ryzhii, T. Otsuji, V. Mitin, and V. Ryzhii
Title : Characteristics of p–i–n terahertz and infrared photodiodes based on multiple graphene layer structures,
Journal : Jpn. J. Appl. Phys., Vol. 50, No. 7, pp. 070117-1-6, July 2011. doi: 10.1143/JJAP.50.070117

No. 90
Authors : Y. Takatsuka, E. Sano, V. Ryzhii, and T Otsuji
Title : Terahertz amplifiers based on multiple graphene layer with field-enhancement effect,
Journal : Jpn. J. Appl. Phys. Vol. 50, No. 7, pp. 070118-1-4, 2011. doi: 10.1143/JJAP.50.070118

No. 89
Authors : D. Svintsov, V. Vyurkov, V. Ryzhii, and T. Otsuji
Title : Effect of
Journal : exican hat" on graphene bilayer field-effect transistor characteristics," Jpn. J. Appl. Phys., Vol. 50, No. 7, pp. 070112-1-6, July 2011. doi: 10.1143/JJAP.50.070112

No. 88
Authors : A. Satou, T. Otsuji, and V. Ryzhii
Title : Theoretical study of population inversion in graphene under pulse excitation,
Journal : Jpn. J. Appl. Phys., Vol. 50, No. 7, pp. 070116-1-4, July 2011. doiI: 10.1143/JJAP.50.070116

No. 87
Authors : H. Karasawa, T. Komori, T. Watanabe, A. Satou, H. Fukidome, M. Suemitsu, V. Ryzhii, and T. Otsuji
Title : Observation of amplified stimulated terahertz emission from optically pumped heteroepitaxial graphene-on-silicon materials,
Journal : J. Infrared Milli. Terahz. Waves, Vol. 32, No. 5, pp. 655-665, 2011. doi:10.1007/s10762-010-9677-1

No. 86
Authors : T. Otsuji, T. Watanabe, A. El Moutaouakil, H. Karasawa, T. Komori, A. Satou, T. Suemitsu, M. Suemitsu, E. Sano, W. Knap, and V. Ryzhii
Title : Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano- and hetero-structures,
Journal : J. Infrared Milli. Terahz. Waves, Vol. 32, No. 5, pp. 629-645, 2011. doi: 10.1007/s10762-010-9714-0

No. 85
Authors : W. Knap, S. Nadar, H. Videlier, S. Boubanga-Tombet, D. Coquillat, N. Dyakonova, F. Teppe, K. Karpierz, J. Łusakowski, M. Sakowicz, I. Kasalynas, D. Seliuta, G. Valusis, T. Otsuji, Y. Meziani, A. El Fatimy, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquière
Title : Field Effect Transistors for Terahertz Detection and Emission,
Journal : J. Infrared Milli. Terahz Waves, Vol. 32, No. 5, pp. 618-628, 2011.
DOI 10.1007/s10762-010-9647-7

No. 84
Authors : A.A. Dubinov, Y.V. Aleshkin, V. Mitin, T. Otsuji, and V. Ryzhii
Title : Terahertz surface plasmons in optically pumped graphene structures,
Journal : J. Phys.: Condens. Matter, vol. 23, no. 14, pp. 145302-1-8, 2011. doi: 10.1088/0953-8984/23/14/145302

No. 83
Authors : V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, and V. Mitin
Title : Analytical Device Model for Graphene Bilayer Field-Effect Transistors Using Weak Nonlocality Approximation,
Journal : J. Appl. Phys. Vol. 109, Iss. 6, pp. 064508-1-10, 2011. http://dx.doi.org/10.1063/1.3560921

No. 82
Authors : A. El Moutaouakil, T. Suemitsu, T. Otsuji, H. Videlier, S.A. Boubanga-Tombet, D. Coquillat, and W. Knap
Title : Device loading effect on nonresonant detection of terahertz radiation in dual grating gate plasmon-resonant structure using InGaP/InGaAs/GaAs material systems,
Journal : Phys. Stat. Solidi., Vol. 8, No. 2, pp. 346–348, 2011. /
DOI 10.1002/pssc.201000569

No. 81
Authors : S. Boubanga-Tombet, F. Teppe, J. Torres, A. El Moutaouakil, D. Coquillat, N. Dyakonova, C. Consejo, P. Arcade, P. Nouvel, H. Marinchio, T. Laurent, C. Palermo, A. Penarier, T. Otsuji, L. Varani, and W. Knap
Title : Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors,
Journal : Appl. Phys. Lett., Vol. 97, Iss. 26, 262108 (3 pages), 2010. doi:10.1063/1.3529464

No. 80
Authors : V. Ryzhii, M. Ryzhii, N. Ryabova, V. Mitin and T. Otsuji
Title : Terahertz and infrared detectors based on graphene structures,
Journal : Infrared Physics and Technology, Vol. 54, Iss. 3, pp. 302-305, May 2011. online Dec. 27, 2010. doi:10.1016/j.infrared.2010.12.034

No. 79
Authors : K. Akagawa, S. Fukuda, T. Suemitsu, T. Otsuji, H. Yokohama, G. Araki
Title : Impact of T-gate electrode on gate capacitance in In0.7Ga0.3As HEMTs,
Journal : Phys. Status Solidi.(c), Vol. 8, Iss. 2, pp. 300-302, 2011. doi: 10.1002/pssc.201000475

No. 78
Authors : E. Sano and T. Otsuji
Title : Performance Prediction of Complementary Field-Effect Transistor Circuits Using Graphene with Band Gap Induced by Site-Potential Asymmetry,
Journal : Jpn. J. Appl. Phys., vol. 50, pp. 115101-1-6, Oct. 2011.
DOI: 10.1143/JJAP.50.115101

No. 77
Authors : M. Ryzhii, V. Ryzhii, T. Otsuji, V. Mitin, and M.S. Shur
Title : Electrically induced n-i-p junctions in multiple graphene layer structures,
Journal : Phys. Rev. B, Vol. 82, pp. 075419-1-6, 2010.
DOI: 10.1103/PhysRevB.82.075419

No. 76
Authors : A. El Moutaouakil, T. Komori, K. Horiike, T. Suemitsu, and T. Otsuji
Title : Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter using InAlAs/InGaAs/InP Material Systems,
Journal : IEICE Trans. Electron., Vol. E93C, No. 8, pp. 1286-1289, 2010.
DOI: 10.1587/transele.E93.C.1286

No. 75
Authors : T. Otsuji, H. Karasawa, T. Watanabe, T. Suemitsu, M. Suemitsu, E. Sano, W. Knap, and V. Ryzhii
Title : Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-heterostructures,
Journal : Comptes Rendus Physique, Vol. 11, Iss. 7-8, pp. 421-432, 2010. doi: 10.1016/j.crhy.2010.04.002

No. 74
Authors : R. Olac-vaw, H.-C. Kang, H. Karasawa, Y. Miyamoto, H. Handa, H. Fukidome, T. Suemitsu, M. Suemitsu, and T. Otsuji
Title : Ambipolar behavior in epitaxial graphene-based field-effect transistors on Si substrate,
Journal : Jpn. J. Appl. Phys., vol. 49, No. 6, 06GG01 (5pages), 2010.
DOI: 10.1143/JJAP.49.06GG01

No. 73
Authors : Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, and Taiichi Otsuji
Title : Epitaxial graphene top-gate FETs on silicon substrates,
Journal : Solid-State Electron., Vol. 54, issue 10, pp. 1071-1075, 2010. doi:10.1016/j.sse.2010.05.030

No. 72
Authors : Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Tetsuya Suemitsu, Maki Suemitsu, and Taiichi Otsuji
Title : Epitaxial graphene field-effect transistors on silicon substrates,
Journal : Solid-State Electron., Vol. 54, issue 9, pp. 1010-1014, 2010. doi:10.1016/j.sse.2010.04.018

No. 71
Authors : T. Nishimura, N. Magome, and T. Otsuji
Title : An intensity modulator for terahertz electromagnetic waves utilizing two-dimensional plasmon resonance in a dual-grating-gate high-electron-mobility transistors,
Journal : Jpn. J. Appl. Phys., Vol. 49, No. 5, pp. 054301-1-7, 2010.
DOI: 10.1143/JJAP.49.054301

No. 70
Authors : H.-C. Kang, R. Olac-vaw, H. Karasawa, Y. Miyamoto, H. Handa, T. Suemitsu, H. Fukidome, M. Suemitsu, and T. Otsuji
Title : Extraction of drain current and effective mobility in epitaxial graphene channel field-effect transistors on SiC layer grown on silicon substrate,
Journal : Jpn. J. Appl. Phys., Vol. 49, No. 4, 04DF17 (5 pages), 2010.
DOI: 10.1143/JJAP.49.04DF17

No. 69
Authors : D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, T. Nishimura, T. Otsuji, Y. M. Meziani, G. M. Tsymbalov, and V. V. Popov
Title : Room temperature detection of sub-terahertz radiation in double-grating-gate transistors,
Journal : Opt. Exp., Vol. 18, iss. 6, pp. 6024–6032, 2010.
DOI: 10.1364/OE.18.006024

No. 68
Authors : V. Ryzhii, M. Ryzhii, V. Mitin, and T. Otsuji
Title : Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures,
Journal : J. Appl. Phys. Vol. 107, iss. 5, pp. 054512-1-7, 2010.
DOI: 10.1063/1.3327441

No. 67
Authors : V. Ryzhii, A. Dubinov, T. Otsuji, V. Mitin, and M. S. Shur
Title : Terahertz lasers based on optically pumped multiple graphene structures with slot-line and dielectric waveguides,
Journal : J. Appl. Phys. Vol. 107, iss. 5, pp. 054505-1-5, 2010. doi:10.1063/1.3327212

No. 66
Authors : A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K K. Madjour, D Théron, C Gaquiere, M. A. Poisson, S. Delage, P. Pristawko, C. Skierbiszewski
Title : AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources,
Journal : J. Appl. Phys., Vol. 107, Iss. 2, 024504-1-4, (2010).
DOI: 10.1063/1.3291101

No. 65
Authors : H-C Kang, T Nishimura, T Komori, T Mori, N Watanabe, T Asano, and T Otsuji
Title : 3D-integration of a log spiral antenna onto a dual grating-gate plasmon-resonant terahertz emitter for high-directivity radiation,
Journal : J. Phys.: Conf. Ser., Vol. 193, 012070(4pages), Nov. 2009.
DOI: 10.1088/1742-6596/193/1/012070

No. 64
Authors : Y M Meziani, T. Nishimura, H Tsuda, T Tsuemitsu, W. Knap, V V Popov, and T Otsuji
Title : Enhancement of terahertz radiation by CW infrared laser excitation in a doubly interdigitated grating gates transistors,
Journal : J. Phys.: Conf. Ser., Vol. 193, 012071(4pages), Nov. 2009.
DOI: 10.1088/1742-6596/193/1/012071

No. 63
Authors : A El Fatimy, T Suemitsu, T Otsuji, N Dyakonova, W Knap, Y M Meziani, C Gaquiere, A Cappy, M Leszczynski, P Dybko, C Skierbiszewski5, T Suski, S Porowski
Title : Tunable room temperature terahertz source based on two-dimensional plasma instability in GaN HEMT,
Journal : J. Phys.: Conf. Ser., Vol. 193, 012072(4pages), Nov. 2009.
DOI: 10.1088/1742-6596/193/1/012072

No. 62
Authors : D Coquillat, S Nadar, F Teppe, N Dyakonova, S Boubanga-Tombet, W Knap, T Nishimura, Y M Meziani, T Otsuji, V V Popov, and G M Tsymbalov
Title : Terahertz detection in a double-grating-gate heterotransistor,
Journal : J. Phys.: Conf. Ser., Vol. 193, 012074(4pages), Nov. 2009.
DOI: 10.1088/1742-6596/193/1/012074

No. 61
Authors : A. El Moutaouakil, T. Watanabe, C. Haibo, T. Komori, T. Suemitsu, and T. Otsuji
Title : Spectral narrowing of terahertz emission from super-grating dual-gate plasmon-resonant high-electron mobility transistors,
Journal : J. Phys.: Conf. Ser., Vol. 193, 012068 (4pages), Nov. 2009.
DOI: 10.1088/1742-6596/193/1/012068

No. 60
Authors : Y. M. Meziani, T. Nishimura, H. Handa, H. Tsuda, and T. Suemitsu, W. Knap, T. Otsuji, E. Sano, G. M. Tsymbalov and V. V. Popov
Title : Efficiency enhancement of emission of terahertz radiation by optical excitation from dual grating gate HEMT,
Journal : J. Nanophoton., Vol. 3, 031980 (2009); doi:10.1117/1.3266497

No. 59
Authors : V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, A. A. Dubinov and V. Y. Aleshkin
Title : Feasibility of terahertz lasing in optically pumped epitaxial multiple graphene layer structures,
Journal : J. Appl. Phys. Vol. 106, Iss. 8, pp. 084507-1-6, 2009. http://dx.doi.org/10.1063/1.3247541

No. 58
Authors : E. Sano and T. Otsuji
Title : Bandgap engineering of bilayer graphene for field-effect transistor channels,
Journal : Jpn. J. Appl. Phys., vol. 48, pp. 091605-1-3, Sept. 2009.
DOI: 10.1143/JJAP.48.091605

No. 57
Authors : W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji
Title : Field effect transistors for terahertz detection: physics and first imaging applications,
Journal : J. Infrared Milli. Terahz Waves, Vol. 30, No. 12, pp. 1319-1337, 2009.
DOI: 10.1007/s10762-009-9564-9

No. 56
Authors : A. A. Dubinov, V. Y. Aleshkin, M. Ryzhii, T. Otsuji, and V. Ryzhii
Title : Terahertz laser with optically pumped graphene layers and Fabri–Perot resonator,
Journal : Appl. Phys. Express, Vol. 2, Iss. 9, pp. 092301-1-3, Aug. 2009.
DOI: 10.1143/APEX.2.092301

No. 55
Authors : Y. Tsuda, T. Komori, A. El Fatimy, Kouhei Horiike, T. Suemitsu, and T. Otsuji
Title : Application of plasmon-resonant microchip emitters to broadband terahertz spectroscopic measurement,
Journal : J. Opt. Soc. America B, Vol. 26, No. 9, pp. A52-A57, 2009.
DOI: 10.1364/JOSAB.26.000A52

No. 54
Authors : E. Sano and T. Otsuji
Title : Source and drain structures for suppressing ambipolar characteristics of graphene field-effect transistors,
Journal : Appl. Phys. Express, Vol. 2, Iss. 6, 061601(2009)(3pages).
DOI: 10.1143/APEX.2.061601

No. 53
Authors : V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, and N. Kirova
Title : Device model for graphene bilayer field-effect transistor,
Journal : J. Appl. Phys., Vol. 105, pp. 104510-1-9, 2009.
DOI: 10.1063/1.3131686

No. 52
Authors : T. Nishimura, N. Magome, H.-C. Kang, T. Otsuji
Title : Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter,
Journal : IEICE Trans. Electron. Vol. E92-C, No. 5, pp. 696-701, 2009.
DOI: 10.1587/transele.E92.C.696

No. 51
Authors : T. Nishimura, N. Magome, I. Khmyrova, T. Suemitsu, W. Knap, and T. Otsuji
Title : Analysis of fringing effect on resonant plasma frequency in plasma wave devices,
Journal : Jpn. J. Appl. Phys. Vol. 48, No. 4, pp. 04C096-1-4, 2009.
DOI: 10.1143/JJAP.48.04C096

No. 50
Authors : S. Fukuda, T. Suemitsu, T. Otsuji, D.-H. Kim, and J.A. del Alamo
Title : Analysis of gate delay scaling in In0.7Ga0.3As-channel high electron mobility transistors,
Journal : Jpn. J. Appl. Phys., Vol. 48, No. 4, pp. 04C086-1-4, 2009.
DOI: 10.1143/JJAP.48.04C086

No. 49
Authors : V. Ryzhii, M. Ryzhii, N. Ryabova, V. Mitin, and T. Otsuji
Title : Graphene nanoribbon phototransistor: proposal and analysis,
Journal : Jpn. J. Appl. Phys., Vol. 48, Issue 4, Part2, pp. 04C144-1-5, 2009.
DOI: 10.1143/JJAP.48.04C144

No. 48
Authors : E. Sano and T. Otsuji
Title : Theoretical evaluation of channel structure in graphene field-effect transistors,
Journal : Jpn. J. Appl. Phys. Vol. 48, No.4, pp. 041202-1-5, 2009.
DOI: 10.1143/JJAP.48.041202

No. 47
Authors : T. Otsuji, T. Nishimura, Y. Tsuda, Y.M. Meziani, T. Suemitsu, and E. Sano
Title : Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's,
Journal : Int. J. High Speed Electron. Sys., Vol. 19, Iss. 1, pp. 33-53, 2009.
DOI: 10.1142/S0129156409006072

No. 46
Authors : E. Sano and T. Otsuji
Title : Performance prediction of graphene-channel field-effect transistors,
Journal : Jpn. J. Appl. Phys., Vol. 48, No. 1, pp. 011604-1-4, Jan. 2009.
DOI: 10.1143/JJAP.48.011604

No. 45
Authors : M. Ryzhii, A. Satou, V. Ryzhii, and T. Otsuji
Title : High-frequency properties of a graphene nanoribbon field-effect transistor,
Journal : J. Appl. Phys. Vol. 104, pp. 114505-1-6, 2008.
DOI: 10.1063/1.3029715

No. 44
Authors : V. Ryzhii, A. Satou, M. Ryzhii, T. Otsuji, and M. S. Shur
Title : Mechanism of self-excitation of terahertz plasma oscillations in periodically double-gated electron channels,
Journal : J. Phys.: Condens. Matt., Vol. 20, 384207-1-6, Aug. 2008. (invited).
DOI: 10.1088/0953-8984/20/38/384207

No. 43
Authors : T. Otsuji, Y. M. Meziani, T. Nishimura, T. Suemitsu, W. Knap, E. Sano, T. Asano, V.V. Popov
Title : Emission of terahertz radiation from dual grating gates plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems,
Journal : J. Phys.: Condens. Matter, Vol. 20, 384206(11p), Aug. 2008. (invited).
DOI:10.1088/0953-8984/20/38/384206

No. 42
Authors : V.G. Leiman, V. Ryzhii, M. Ryzhii, A. Satou, N. Ryabova, T. Otsuji, M. Shur
Title : Analysis of resonant detection of terahertz radiation in high-electron mobility transistor with a nanostring/carbon nanotube as mechanically floating gate,
Journal : J. Appl. Phys., Vol. 104, Iss. 024514 pp. 1-7, July 2008.
DOI: 10.1063/1.2957589

No. 41
Authors : V. Ryzhii, V. Mitin, M. Ryzhii, N. Ryzbova, and T. Otsuji
Title : Device model for graphene nanoribbon phototoransistor,
Journal : Appl. Phys. Express, Vol. 1, Iss. 6, pp. 063002-1-3, 2008.
DOI: 10.1143/APEX.1.063002

No. 40
Authors : V. Ryzhii, M. Ryzhii, and T. Otsuji
Title : Thermionic and tunneling transport mechanisms in graphene field-effect transistors,
Journal : Physica. Status Solidi (a), Vol. 205, No. 7, pp. 1527-1533, 2008.
DOI: 10.1002/pssa.200724035

No. 39
Authors : Y. M. Meziani, H. Handa, W. Knap, T. Otsuji, E. Sano, V. V. Popov, G. M. Tsymbalov, D. Coquillat, and F. Teppe
Title : Room temperature terahertz emission from grating coupled two-dimensional plasmons,
Journal : Applied Physics Letters, Vol. 92, Iss. 20, pp. 201108-1-3, 2008.
DOI: 10.1063/1.2919097

No. 38
Authors : V. Ryzhii, M. Ryzhii, A. Satou, and T. Otsuji
Title : Current-Voltage Characteristics of a Graphene Nanoribbon Field-Effect Transistor,
Journal : J. Appl. Phys., Vol. 103, pp. 094510-1-8, May. 2008.
DOI: 10.1063/1.2917284

No. 37
Authors : V. Ryzhii, A. Satou, T. Otsuji, and M. Shur
Title : Plasma mechanisms of resonant terahertz detection in a two-dimensional electron channel with split gates,
Journal : J. Appl. Phys., Vol. 103, Iss. 1, pp. 014504-1-014504-6, Jan. 2008.
DOI: 10.1063/1.2828173

No. 36
Authors : V. Ryzhii, M. Ryzhii, and T. Otsuji
Title : Tunneling current–voltage characteristics of graphene field-effect transistor,
Journal : Appl. Phys. Express, Vol. 1,Iss. 1, pp. 013001-1-013001-3, Jan. 2008.
DOI: 10.1143/APEX.1.013001

No. 35
Authors : Y.M. Meziani, M. Hanabe, T. Otsuji, and E. Sano
Title : Bolometric detection of terahertz radiation from new grating gates device,
Journal : Physica Status. Solidi (c), Vol. 5, No. 1, pp. 282-285, Jan. 2008.
DOI: 10.1002/pssc.200776536

No. 34
Authors : V. Ryzhii, M. Ryzhii, and T. Otsuji
Title : Population inversion of photoexcited electrons and holes in graphene and its negative terahertz conductivity,
Journal : Physica Status Solidi (c), Vol. 5, No. 1, pp. 261-264, Jan. 2008.
DOI: 10.1002/pssc.200776504

No. 33
Authors : A. El Fatimy, R. Tauk, S. Boubanga, F. Teppe, N. Dyakonova, W. Knap, J. Lyonnet, Y.M. Meziani, T. Otsuji, M.-A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Ooelens, Ch. Gaquiere, D. Theron, and A. Cappy
Title : Plasma oscillations in nanotransistors for room temperature detection and emission of terahertz radiation,
Journal : Physica Status Solidi (c), Vol. 5, No. 1, pp. 244-248, Jan. 2008.
DOI: 10.1002/pssc.200776585

No. 32
Authors : A.Satou, V.Ryzhii, T.Otsuji, and M.S.Shur
Title : Resonant terahertz detection antenna utilizing plasma oscillations in lateral Schottky diode,
Journal : Int. J. High Speed Electron. Sys., vol. 17, No. 3, pp.539-546, Sept. 2007.
DOI: 10.1142/S0129156407004722

No. 31
Authors : E.. Sano, and T. Otsuji
Title : HEMT-based nanometer devices toward terahertz era,
Journal : Int. J. High Spped Electron. Sys., vol. 17, no. 3, pp. 509-520, Sept. 2007.
DOI: 10.1142/S0129156407004709

No. 30
Authors : V.Ryzhii, I.Khmyrova, M.Ryzhii, A.Satou, T.Otsuji, V.Mitin, and M.S.Shur
Title : Plasma waves in two-dimensional electron systems and their applications,
Journal : Int. J. High Speed Electron. Sys., vol. 17, No. 3, pp.521-538, Sept. 2007.
DOI: 10.1142/S0129156407004710

No. 29
Authors : T. Nishimura and T. Otsuji
Title : Terahertz polarization controller based on electronic dispersion control of 2D plasmons,
Journal : International Journal of High Speed Electronics and Systems, Vol. 13, No. 3, pp. 547-555, Sept. 2007.
DOI: 10.1142/S0129156407004734

No. 28
Authors : T. Otsuji, Y.M. Meziani, M. Hanabe, T. Nishimura, and E. Sano
Title : Emission of terahertz radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant emitter,
Journal : Solid-State Electronics, Vol. 51, Iss. 10, pp. 1319-1327, Oct. 2007.
DOI: 10.1016/j.sse.2007.07.017

No. 27
Authors : K. Narahara, T. Nakamichi, T. Suemitsu, T. Otsuji, and E. Sano
Title : Development of solitons in composite right- and left-handed transmission lines periodically loaded with Schottky varactors,
Journal : Journal of Applied Physics, vol. 102, iss. 2, pp. 024501-1-024501-4, 2007.
DOI: 10.1063/1.2753568

No. 26
Authors : K. Narahara, T. Nakamichi, T. Otsuji, and E. Sano
Title : Development of solitons in composite right- and left-handed transmission lines periodically loaded with varactors with symmetrical capacitance-voltage characteristics,
Journal : Japanese Journal of Applied Physics, vol. 46, no. 5A, pp. 3123-3125, May 2007.
DOI:10.1143/JJAP.46.3123

No. 25
Authors : M. Hanabe, Y. M. Meziani, T. Otsuji, E. Sano and T. Asano
Title : Possibility of Terahertz injection-locked oscillation in an InGaP/InGaAs/GaAs two-dimensional plasmon-resonant photomixer,
Journal : IEICE Transactions on Electronics, vol. E90-C, No.5, pp. 949-954, May 2007.
DOI: 10.1093/ietele/e90-c.5.949

No. 24
Authors : T. Suemitsu and M. Tokumitsu"InP HEMT technology for high-speed logic and communications
Title : InP HEMT technology for high-speed logic and communications,
Journal : IEICE Trans. Electron., vol. E90-C, no. 5, pp. 917-922, 2007.

No. 23
Authors : Y. M. Meziani, M. Hanabe T. Otsuji, and E. Sano
Title : Threshold behavior of photoinduced plasmon-resonant self-oscillation in a new interdigitated grating gates device,
Journal : Japanese Journal of Applied Physics, Vol. 46, No. 4B, pp. 2409-2412, Apr 2007.
DOI: 10.1143/JJAP.46.2409

No. 22
Authors : 末光哲也
Title : 高電子移動度トランジスタの高速性能極限の追求,
Journal : 電子情報通信学会論文誌 vol. J90-C, no. 4 (2007) pp. 312-318.

No. 21
Authors : V. Ryzhii, M. Ryzhii, and T. Otsuji
Title : Negative dynamic conductivity of graphene with optical pumping,
Journal : J. Appl. Phys., Vol. 101, No. 7, pp. 083114-1 - 083114-4, Apr 2007.
DOI: 10.1063/1.2717566

No. 20
Authors : Y. M. Meziani, T. Otsuji, M. Hanabe, T. Ishibashi, T. Uno and E. Sano
Title : Room temperature generation of terahertz radiation from a grating-bicoupled plasmon-resonant emiter: size effect,
Journal : Applied Physics Letters, vol.90, pp.061105-1-061105-3, Feb 2007.
DOI: 10.1063/1.2459879

No. 19
Authors : Tetsuya Suemitsu
Title : Recent achievements in the reliability of InP-based HEMTs,
Journal : Thin Solid Films, vol. 515, no. 10, pp. 4378-4383, 2007.

No. 18
Authors : V. Ryzhii, A. Satou and T. Otsuji
Title : Plasma waves in two-dimensional electron-hole system in gated graphene heterostructures,
Journal : Journal of Applied Physics, vol.101, 024509-1-024509-5, Jan. 2007.
DOI: 10.1063/1.2426904

No. 17
Authors : T. Otsuji, Y. M. Meziani, M. Hanabe, T. Ishibashi, T. Uno and E. Sano
Title : Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems,
Journal : Applied Physics Letters, vol.89, pp.263502-1-263502-3, Dec 2006.
DOI: 10.1063/1.2410228

No. 16
Authors : K. Narahara, T. Otsuji and E. Sano
Title : Generation of electrical-short-pulse using Schottky line periodically loaded with electronic switches,
Journal : Journal of Applied Physics, Vol. 100, Iss. 2, pp. 0204511-1-0204511-5, July 15th 2006.
DOI: 10.1063/1.2210269

No. 15
Authors : K. Narahara, T. Otsuji and E. Sano
Title : Pulse Compression by Quasi-Steady Propagation along Switch Lines,
Journal : Japanese Journal of Applied Physics, Vol. 45, No. 7, pp. 5692-5695, July 7th 2006.
DOI: 10.1143/JJAP.45.5692

No. 14
Authors : V. Tamosiunas, D. Seliuta, A. Juozapavicius, E. Sirmulis, G. Valusis, A. El Fatimy, Y. Meziani, N. Dyakonova, J. Lusakowski, W. Knap, A. Lisauskas, H. G. Roskos and K. Kohler
Title : Review: New trends in terahertz electronics,
Journal : Lithuanian Journal of Physics, Vol. 46, No. 2, pp. 131-145, July 2006.

No. 13
Authors : T. Nishimura, M. Hanabe, M. Miyamoto, T. Otsuji and E. Sano
Title : Terahertz frequency multiplier operation of 2-D plasmon-resonant photomixer,
Journal : IEICE Transactions on Electronics, Vol. E89-C, No. 7, pp.1005-1011, July 2006.
DOI: 10.1093/ietele/e89-c.7.1005

No. 12
Authors : Y. M. Meziani, J. Lusakowski, N. Dyakonova, W. Knap, D. Seliuta, E. Sirmulis, J. Devenson, G. Valusis, F. Boeuf and T. Skotnicki
Title : Non resonant response of terahertz radiation by submicron CMOS transistors,
Journal : IEICE Transactions on Electronics, Vol. E89-C, No. 7, pp. 993-998, July 2006.

No. 11
Authors : M. Hanabe, T. Nishimura, M. Miyamoto, T. Otsuji and E. Sano
Title : Structure-sensitive design for wider tunable operation of terahertz plasmon-resonant photomixer,
Journal : IEICE Transactions on Electronics, Vol. E89-C, No. 7, pp. 985-992, July 2006.
DOI: 10.1093/ietele/e89-c.7.985

No. 10
Authors : T. Inushima, N. Kato, D. K. Maude, H. Lu, W. J. Schaff, R. Tauk, Y. Meziani, S. Ruffenack, O. Briot, W. Knap, B. Gil, H. Miwa, A. Yamamoto, D. Muto, Y. Nanishi, M. Higashiwaki and T. Matsu
Title : Superconductivity of InN with a well defined Fermi surface,
Journal : Physica Status Solidi (b) -Basic Solid State Physics, Vol. 243, No. 7, pp. 1679-1686, June 2006.

No. 9
Authors : T. Otsuji, M. Hanabe, T. Nishimura and E. Sano
Title : A grating-bicoupled plasma-wave photomixer with resonant-cavity enhanced structure,
Journal : Optics Express, Vol. 14, No. 11, pp. 4815-4825, May 2006.
DOI: 10.1364/OE.14.004815

No. 8
Authors : V. Ryzhii, M. Ryzhii, I. Khmyrova, T. Otsuji and M. Shur
Title : #VALUE!
Journal : #VALUE!
DOI: 10.1143/JJAP.45.3648

No. 7
Authors : J. Lusakowski, W. Knap, Y. Meziani, J.-P. Cessoa, A. El Fatimya, R. Tauka, N. Dyakonova, G. Ghibaudo, F. Boeuf and T. Skotnicki
Title : Electron mobility in quasi-ballistic Si MOSFETs,
Journal : Solid-State Electronics, Vol. 50, Iss. 4, pp. 632-636, April 2006.

No. 6
Authors : J. Lusakowski, W. Knap, Y. Meziani, J. -P. Cesso, A. El Fatimy, R. Tauk, N. Dyakonova, G. Ghibaudo, F. Boeuf and T. Skotnicki
Title : Ballistic and pocket limitations of mobility in nanometer Si metal-oxide semiconductor field-effect transistors,
Journal : Applied Physics Letters, Vol. 87, No. 5, pp. 053507-1-053507-3, July 2005.

No. 5
Authors : M. Hanabe, T. Otsuji, T. Ishibashi, T. Uno and V. Ryzhii
Title : Modulation effects of photocarriers on the terahertz plasma-wave resonance in high-electron-mobility transistors under interband photoexcitation,
Journal : Japanese Journal of Applied Physics, Vol. 44, No. 6A, pp. 3842-3847, June 2005.
DOI: 10.1143/JJAP.44.3842

No. 4
Authors : T. Otsuji, M. Hanabe and O. Ogawara
Title : Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors,
Journal : Applied Physics Letters, Vol. 85, No. 11, pp. 2119-2121, Sept. 2004.
DOI: 10.1063/1.1792377

No. 3
Authors : T. Otsuji, Y. Kanamaru, H. Kitamura, M. Matsuoka and O. Ogawara
Title : Effect of heterostructure 2-D electron confinement on the tunability of resonant frequencies of terahertz plasma-wave transistors,
Journal : IEICE Transactions on Electronics, Vol. E86-C, No. 10, pp. 1985-1993, Oct. 2003.

No. 2
Authors : T. Otsuji
Title : Present and future of high-speed compound semiconductor IC's,
Journal : Compound Semiconductor Integrated Circuits, Int. J. High Speed Electron. Sys., Vol. 13, No. 1, pp. 1-25, 2003.
DOI: 10.1142/S0129156403001508

No. 1
Authors : T. Otsuji, S. Nakae and H. Kitamura
Title : Numerical analysis for resonance properties of plasma-wave field-effect transistors and their terahertz applications to smart photonic network systems,
Journal : IEICE Transactions on Electronics, Vol. E84-C, No. 10, pp. 1470-1476, Oct. 2001.